Freescale Semiconductor
Technical Data
Document Number: MRF5P21240HR6
Rev. 2, 10/2008
RF Power Field Effect Transistor
MRF5P21240HR6
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
2200 mA, Pout = 52 Watts Avg., f = 2157.5 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 24%
IM3 @ 10 MHz Offset — --36 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2110--2170 MHz, 52 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
603
3.4
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
200
1.18
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 180 W CW
Case Temperature 77°C, 52 W CW
RθJC
0.29
0.32
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFET
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5P21240HR6
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
M3 (Minimum)
Charge Device Model (per JESD22--C101)
C6 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage (3)
(VDS = 28 Vdc, ID = 2200 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance (1)
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.75
—
pF
Characteristic
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2200 mA, Pout = 52 W Avg., f1 = 2157.5 MHz,
f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12
13
—
dB
Drain Efficiency
ηD
22.5
24
—
%
Intermodulation Distortion
IM3
—
--36
--34
dBc
ACPR
—
--39
--37
dBc
IRL
—
--12
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
(1)
MRF5P21240HR6
2
RF Device Data
Freescale Semiconductor
B1
R4
+
C17
+
C15
C13
Z15
C9
R1
Z1
RF
INPUT
Z5
Z13
C4
Z6
ARCHIVE INFORMATION
Z12
Z23
Z14
Z18
Z20
Z24
RF
OUTPUT
Z22
Z16
R2
C6
+
C23
Z1
Z2, Z23
Z3, Z22
Z4, Z21
Z5, Z6
Z7, Z8
Z9, Z10
0.898″ x 0.080″ Microstrip
0.775″ x 0.136″ Microstrip
0.060″ x 0.080″ Microstrip
1.867″ x 0.080″ Microstrip
0.443″ x 0.080″ Microstrip
0.100″ x 0.080″ Microstrip
0.490″ x 0.540″ Microstrip
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z24
PCB
+
C24
C7
C11
+
C25
+
C26
+
Table 5. MRF5P21240HR6 Test Circuit Component Designations and Values
Description
VSUPPLY
C28
1.270″ x 0.058″ Microstrip
0.250″ x 0.500″ Microstrip
0.850″ x 0.150″ Microstrip
0.535″ x 0.390″ Microstrip
0.218″ x 0.080″ Microstrip
0.825″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″, εr = 2.55
Figure 1. MRF5P21240HR6 Test Circuit Schematic
Part
VSUPPLY
C27
C3
R3
C10
+
Z10
C2
C14
+
C22
Z8
DUT
Z7
+
C16
+
C21
C12
Z21
Z9
B2
+
C18
Z19
Z17
C1
Z2
Z4
VBIAS
C8
C5
Z11
Z3
+
C20
Part Number
Manufacturer
B1, B2
Short Ferrite Beads
2743019447
Fair--Rite
C1, C2, C3, C4
18 pF Chip Capacitors
ATC100B180JCT500XT
ATC
C5, C6, C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JCT500XT
ATC
C9, C10, C11, C12
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C13, C14
1000 pF Chip Capacitors
ATC100B102JCT500XT
ATC
C15, C16
4.7 μF Tantalum Capacitors
T491C475M050AT
Kemet
C17, C18
10 μF, 50 V Electrolytic Capacitors
EMVY500ADA100MF55G
Nippon Chemi--Con
C19, C20, C21, C22
C23, C24, C25, C26
22 μF Tantalum Capacitors
T491X226K035
Kemet
C27, C28
100 μF, 50 V Electrolytic Capacitors
EMVY500ADA101MHA0G
Nippon Chemi--Con
R1, R2
1 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R3, R4
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
ARCHIVE INFORMATION
VBIAS
+
C19
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
3
MRF5P21240 Rev. 5
C15
C13 C9
C19
C22
C12
C27
C8
B1 R1
C5
R4
C20
C21
C4
ARCHIVE INFORMATION
CUT OUT AREA
C1
C3
C2
R3
C24
C6
C25
B2 R2
C18
C16
C14 C10
C23
C7
C26 C11
C28
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5P21240HR6 Test Circuit Component Layout
ARCHIVE INFORMATION
C17
MRF5P21240HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15
25
VDD = 28 Vdc, Pout = 52 W (Avg.), IDQ = 2200 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
11
10
IRL
9
8
20
--25
--30
--35
IM3
7
6
--40
ACPR
5
2080
--45
2100
2120
2140
2160
--50
2200
2180
--5
--10
--15
--20
--25
--30
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
@ Pout = 52 Watts Avg.
--25
IDQ = 2640 mA
2420 mA
13.5
2200 mA
13
1980 mA
1760 mA
12.5
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
12
10
2
100
300
IMD,THIRD ORDER
INTERMODULATION DISTORTION (dBc)
14
G ps , POWER GAIN (dB)
--30
IDQ = 2640 mA
--35
2420 mA
--40
2200 mA
--45
--50 1980 mA
1760 mA
10
2
Pout, OUTPUT POWER (WATTS) PEP
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
--25
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--55
60
59
3rd Order
--30
Ideal
58
Pout , OUTPUT POWER (dBm)
ARCHIVE INFORMATION
30
ηD
ARCHIVE INFORMATION
12
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
13
35
Gps
IM3 (dBc), ACPR (dBc)
14
ηD, DRAIN
EFFICIENCY (%)
40
P3dB = 55.03 dBm (318.24 W)
57
--35
56
--40
Actual
P1dB = 54.36 dBm (272.9 W)
55
5th Order
54
--45
53
7th Order
52
VDD = 28 Vdc, Pout = 240 W (PEP), IDQ = 2200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--50
--55
1
0.1
10
VDD = 28 Vdc, IDQ = 2200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
51
50
30
36
37
38
39
40
41
42
43
44
45
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
46
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
5
25
20
--30
IM3
ACPR
15
--35
--40
Gps
10
--45
5
--50
0
--55
1
109
--25
ηD
107
106
100
100
10
108
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) AVG.
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
--20
100
3.84 MHz
Channel BW
--30
10
--40
--50
1
(dB)
--60
0.1
--70
--80
0.01
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
--90
--100
--110
0.0001
0
2
4
6
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--120
--25
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--20
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
25
ARCHIVE INFORMATION
VDD = 28 Vdc, IDQ = 2200 mA
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
MTTF FACTOR (HOURS x AMPS2)
30
PROBABILITY (%)
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5P21240HR6
6
RF Device Data
Freescale Semiconductor
f = 2190 MHz
Zload*
f = 2090 MHz
f = 2190 MHz
Zsource
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 2200 mA, Pout = 52 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2090
5.33 -- j6.21
11.42 -- j2.25
2110
5.44 -- j5.88
10.45 -- j2.16
2130
5.40 -- j6.16
11.28 -- j2.14
2150
5.12 -- j6.06
11.38 -- j2.14
2170
4.96 -- j5.25
11.04 -- j1.25
2190
4.98 -- j4.47
10.73 -- j0.40
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2090 MHz
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
bbb
G 4
1
2
3
4
T A
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
D
aaa
M
T A
M
B
M
ccc
ccc
ARCHIVE INFORMATION
B
M
(FLANGE)
4X
K
M
B
L
4X
Q
M
T A
M
B
M
M
T A
M
B
M
R
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
CASE 375D--05
ISSUE E
NI--1230
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
ARCHIVE INFORMATION
2X
A
A
MRF5P21240HR6
8
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
• Data sheet archived. Part no longer manufactured.
MRF5P21240HR6
RF Device Data
Freescale Semiconductor
9
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF5P21240HR6
Document Number: MRF5P21240HR6
Rev. 2, 10/2008
10
RF Device Data
Freescale Semiconductor
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