MRF5S19060NR1

Freescale Semiconductor Technical Data Document Number: MRF5S19060N Rev. 7, 10/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. • Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., 1990 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead - Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1930- 1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060NR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 218.8 1.25 W W/°C Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 12 W CW RθJC 0.80 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) C (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 225 μAdc) VGS(th) 2.5 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) VGS(Q) — 3.8 — Vdc Drain- Source On - Voltage (VGS = 5 Vdc, ID = 2.25 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.25 Adc) gfs — 5 — S Crss — 1.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 14 16 dB Drain Efficiency ηD 21 23 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 12 -9 dB Pulse Peak Power (VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 μs, 1% Duty Cycle) Psat — 110 — W Video Bandwidth (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing = 1 MHz to VBW, Δ IM3