MRF5S19090HSR3

Freescale Semiconductor Technical Data Document Number: MRF5S19090H Rev. 2, 5/2006 RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., Full Frequency Band, IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.8% IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — --51 dB in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19090HR3 MRF5S19090HSR3 1930--1990 MHz, 18 W AVG., 28 V 2 x N--CDMA LATERAL N--CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs CASE 465--06, STYLE 1 NI--780 MRF5S19090HR3 CASE 465A--06, STYLE 1 NI--780S MRF5S19090HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 266 1.52 W W/°C Storage Temperature Range Tstg --65 to +200 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 65 W CW Case Temperature 78°C, 18 W CW RθJC °C/W 0.66 0.68 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.  Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19090HR3 MRF5S19090HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) VGS(th) 2.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) — 3.7 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5 — S Crss — 1.7 — pF On Characteristics (DC) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 18 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz,2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 13.5 14.5 — dB Drain Efficiency ηD 24 25.8 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --51 --48 dBc IRL — --14.5 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S19090HR3 MRF5S19090HSR3 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics B1 W1 VBIAS + R1 R2 VSUPPLY C3 C4 C5 + + R3 C8 C7 C13 C11 + C9 C12 + C10 R4 C6 Z9 Z6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z2 Z3 C15 C14 Z4 Z5 Z8 Z10 Z11 Z12 Z7 Z13 RF OUTPUT C2 C1 0.140″ x 0.080″ Microstrip 0.450″ x 0.080″ Microstrip 0.140″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.636″ x 0.141″ Microstrip 0.340″ x 0.050″ Microstrip 0.320″ x 1.401″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB ARCHIVE INFORMATION ARCHIVE INFORMATION RF INPUT Z1 DUT 0.091″ x 1.133″ Microstrip 0.542″ x 0.071″ Microstrip 0.450″ x 1.133″ Microstrip 0.640″ x 0.141″ Microstrip 0.316″ x 0.080″ Microstrip 1.209″ x 0.080″ Microstrip Arlon GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF5S19090HR3(HSR3) Test Circuit Schematic Table 5. MRF5S19090HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 95F786 Newark C1 22 pF Chip Capacitor 100B220CP 500X ATC C2 10 pF Chip Capacitor 100B100CP 500X ATC C3, C13 1 µF, 50 V SMT Tantalum Capacitors T494C105(1)050AS Kemet C4, C12 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C5, C11 1k pF Chip Capacitors 100B102JP 500X ATC C6, C7 4.3 pF Chip Capacitors 100B4R3JP 500X ATC C8 10 µF, 35 V SMT Tantalum Capacitor T494D106(1)035AS Kemet C9, C10 22 µF, 35 V SMT Tantalum Capacitors T494X226(1)035AS Kemet C14 2.7 pF Chip Capacitor 100B2.7BP 500X ATC C15 0.6 – 4.5 Gigatrim Variable Capacitor 44F3358 Newark R1 1 kΩ Chip Resistor D5534M07B1K00R Newark R2 560 kΩ Chip Resistor CR1206 564JT Newark R3, R4 12 Ω Chip Resistors RM73B2B120JT Garrett Electronics W1 1 turn 14 gauge wire MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 3 C8 C13 C7 R1 R3 B1 W1 C6 ARCHIVE INFORMATION C9 CUT OUT AREA C14 C15 VDD R4 C12 R2 C3 C4C5 C1 C11 C10 C2 MRF5S19090 Rev 02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19090HR3(HSR3) Test Circuit Component Layout MRF5S19090HR3 MRF5S19090HSR3 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VGG Gps ηD 12 10 IRL 30 VDD = 28 Vdc, Pout = 18 W (Avg.), IDQ = 850 mA 2--Carrier N--CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 20 --20 IM3 8 0 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 14 --40 ACPR --10 --20 --30 --40 --50 f, FREQUENCY (MHz) Figure 3. 2--Carrier N--CDMA Broadband Performance --15 G ps , POWER GAIN (dB) IDQ = 1300 mA 16 15 1100 mA 850 mA 650 mA 14 13 450 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurement, 2.5 MHz Tone Spacing 12 1 10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 17 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurement, 2.5 MHz Tone Spacing --20 --25 --30 --35 IDQ = 450 mA --40 1100 mA 1300 mA --45 --50 850 mA 650 mA --55 100 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two--Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power --25 56 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA --30 3rd Order --35 --40 5th Order --45 7th Order --50 Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz --55 0.1 1 Ideal 55 Pout , OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION 6 --60 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080 10 P3dB = 51.21 dBm (132.13 W) 54 53 P1dB = 50.82 dBm (120.78 W) 52 51 Actual 50 49 48 VDD = 28 Vdc, IDQ = 850 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 1960 MHz 47 46 45 31 32 33 34 35 36 37 38 39 40 41 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 42 MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION ηD, DRAIN EFFICIENCY (%) 40 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS 16 --30 25 IM3 20 --45 Gps 15 --40 --50 ηD 10 --55 ACPR 5 --60 0 107 106 100 --65 1 108 10 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTBF in a particular application. Figure 8. 2--Carrier N--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature N--CDMA TEST SIGNAL 0 100 1.2288 MHz Channel BW --10 10 --20 1 --IM3 in 1.2288 MHz Integrated BW --30 +IM3 in 1.2288 MHz Integrated BW --40 0.1 0.01 0.001 (dB) IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. --50 --60 --70 --ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW --80 0.0001 0 2 4 6 8 10 --90 PEAK--TO--AVERAGE (dB) Figure 10. 2--Carrier CCDF N--CDMA --100 --7.5 --6 --4.5 --3 --1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 11. 2--Carrier N--CDMA Spectrum MRF5S19090HR3 MRF5S19090HSR3 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION --35 ηD IM3 (dBc), ACPR (dBc) 30 IM3 MTTF FACTOR (HOURS X AMPS2) 35 109 --25 VDD = 28 Vdc, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N--CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) Pout, OUTPUT POWER (WATTS) AVG. PROBABILITY (%) ARCHIVE INFORMATION ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 40 f = 1990 MHz Zo = 10 Ω Zload f = 1930 MHz f = 1990 MHz ARCHIVE INFORMATION ARCHIVE INFORMATION Zsource f = 1930 MHz VDD = 28 V, IDQ = 850 mA, Pout = 18 W Avg. f MHz Zsource Ω Zload Ω 1930 2.98 -- j5.12 2.07 -- j1.31 1960 3.36 -- j4.65 2.02 -- j1.18 1990 4.06 -- j4.64 1.93 -- j1.01 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF5S19090HR3 MRF5S19090HSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 9 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF5S19090HR3 MRF5S19090HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N ARCHIVE INFORMATION R (INSULATOR) M T A M B M ccc M T A M M aaa M T A M B S (LID) ccc (LID) M T A M B M (INSULATOR) B M H C F E T A A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 (FLANGE) D bbb M MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF CASE 465--06 ISSUE G NI--780 MRF5S19090HR3 4X U (FLANGE) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc ARCHIVE INFORMATION B T A M B M N (LID) ccc M R M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H C 3 DIM A B C D E F H K M N R S U Z aaa bbb ccc F E A T SEATING PLANE A (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF5S19090HSR3 MRF5S19090HR3 MRF5S19090HSR3 RF Device Data Freescale Semiconductor 11 Home Page: www.freescale.com E--mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1--800--521--6274 or +1--480--768--2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF5S19090HR3 MRF5S19090HSR3 Document Number: MRF5S19090H Rev. 2, 5/2006 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: