Freescale Semiconductor
Technical Data
Document Number: MRF5S19100H
Rev. 5, 10/2008
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA,
Pout = 22 Watts Avg., f = 1987.5 MHz, IS--95 (Pilot, Sync, Paging, Traffic
Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — --36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — --50.7 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF5S19100HR3
MRF5S19100HSR3
1930--1990 MHz, 22 W AVG., 28 V
2 x N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S19100HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
269
1.54
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
RθJC
0.64
0.65
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
Freescale Semiconductor
RF Product Device Data
MRF5S19100HR3 MRF5S19100HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 240 μAdc)
VGS(th)
—
2.7
—
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.4 Adc)
gfs
—
6.3
—
S
Crss
—
2.2
—
pF
Characteristic
On Characteristics (DC)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1987.5 MHz, f2 =
1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3
measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
13.9
—
dB
Drain Efficiency
ηD
24
25.5
—
%
Intermodulation Distortion
IM3
—
--36.5
--35
dBc
ACPR
—
--50.7
--48
dBc
IRL
—
--13
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S19100HR3 MRF5S19100HSR3
2
Freescale Semiconductor
RF Product Device Data
B1
VBIAS
R1
R2
+
C3
C4
C5
W1
+
R3
C7
C8
+
C9
+
C10
VSUPPLY
C11
R4
C12
+
C13
+
C14
C6
Z9
Z6
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
Z2
Z3
C15
C16
Z4
Z5
Z8
Z10
Z11
Z12
Z7
Z13
C2
Z14
C17
RF
OUTPUT
C1
0.140″ x 0.080″ Microstrip
0.450″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.636″ x 0.141″ Microstrip
0.650″ x 0.050″ Microstrip
0.320″ x 1.299″ Microstrip
0.091″ x 1.133″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.450″ x 0.141″ Microstrip
0.490″ x 0.080″ Microstrip
0.085″ x 0.080″ Microstrip
1.124″ x 0.080″ Microstrip
Arlon GX--0300--55--22, 0.030″, εr = 2.55
Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair--Rite
C1
22 pF Chip Capacitor
ATC100B220CT500XT
ATC
C2
10 pF Chip Capacitor
ATC100B100CT500XT
ATC
C3
1 μF, 50 V Tantalum Capacitor
T494C105J050AT
Kemet
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C5, C11
1K pF Chip Capacitors
ATC100B102JT500XT
ATC
C6
2.7 pF Chip Capacitor
ATC100B2R7BT500XT
ATC
C7
4.3 pF Chip Capacitor
ATC100B4R3JT500XT
ATC
C8
10 μF, 35 V Tantalum Capacitor
T494D106J035AT
Kemet
C9, C10, C13, C14
22 μF, 35 V Tantalum Capacitors
T494X226J035AT
Kemet
C15
0.6 – 4.5 Gigatrim Variable Capacitor
272715L
Johanson
C16
2.2 pF Chip Capacitor
ATC100B2R2BT500XT
ATC
C17*
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3, R4
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
W1
1 turn 14 gauge wire
ARCHIVE INFORMATION
ARCHIVE INFORMATION
RF
INPUT
Z1
DUT
* Need for part will vary from fixture to fixture.
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
3
MRF5S19100
Rev 1
C6
B1
R2 C3 C4
ARCHIVE INFORMATION
W1
C16
C11 C12
VDD
R4
C13
C5
C1
C15
R3
C14
C2
C17
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S19100HR3(HSR3) Test Circuit Component Layout
ARCHIVE INFORMATION
R1
C9 C10
C7
CUT OUT AREA
VGG
C8
MRF5S19100HR3 MRF5S19100HSR3
4
Freescale Semiconductor
RF Product Device Data
9
8
7
IRL
20
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
--30
--35
IM3
ACPR
--40
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
--45
--50
5
--55
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040
--10
--15
--20
--25
--30
--35
f, FREQUENCY (MHz)
Figure 3. 2--Carrier N--CDMA Broadband Performance
--15
IDQ = 1500 mA
1300 mA
1000 mA
14
760 mA
13
530 mA
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
11
10
10
1
--25
--30
1300 mA
IDQ = 1500 mA
--35
--40
530 mA
--45
1000 mA
--50
760 mA
1
100
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
58
--25
--30
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurement, 2.5 MHz Tone Spacing
--20
--55
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
57
Pout , OUTPUT POWER (dBm)
G ps , POWER GAIN (dB)
15
IMD, INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
3rd Order
--35
--40
--45
5th Order
--50
7th Order
--55
0.1
1
10
40
Ideal
56
P3dB = 51.98 dBm (157.81 W)
55
54
ARCHIVE INFORMATION
G ps , POWER GAIN (dB)
25
11
6
ARCHIVE INFORMATION
35
30
ηD
12
10
ηD, DRAIN
EFFICIENCY (%)
14
13
40
Gps
IM3 (dBc), ACPR (dBc)
15
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
P1dB = 51.3 dBm (135.01 W)
53
52
Actual
51
50
49
48
47
46
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
32
33
34
35
36
37
38
39
40
41
42
43
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
44
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
5
35
--28
--35
20
ACPR
15
Gps
--42
--49
10
--56
5
--63
0
108
107
106
100
--70
75
10
1
MTTF FACTOR (HOURS x AMPS2)
25
IM3
IM3 (dBc), ACPR (dBc)
30
109
--21
ηD
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N--CDMA, 2.5 MHz @ 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
120
140
160
180
220
200
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) AVG.
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
N--CDMA TEST SIGNAL
0
100
10
--20
1
--IM3 in
1.2288 MHz
Integrated BW
--30
+IM3 in
1.2288 MHz
Integrated BW
--40
0.1
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
1.2288 MHz
Channel BW
--10
--60
--70
2
4
6
--ACPR in 30 kHz
Integrated BW
--80
0.0001
0
--50
8
PEAK--TO--AVERAGE (dB)
Figure 10. 2--Carrier CCDF N--CDMA
10
+ACPR in 30 kHz
Integrated BW
--90
--100
--7.5
--6
--4.5
--3
--1.5
0
1.5
3
4.5
6
f, FREQUENCY (MHz)
7.5
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Figure 11. 2--Carrier N--CDMA Spectrum
MRF5S19100HR3 MRF5S19100HSR3
6
Freescale Semiconductor
RF Product Device Data
Zo = 10 Ω
f = 1990 MHz
Zload
f = 1990 MHz
f = 1930 MHz
Zsource
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 1930 MHz
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
4.45 -- j5.32
1.98 -- j2.58
1960
4.53 -- j5.40
1.83 -- j2.55
1990
5.12 -- j5.45
1.60 -- j2.15
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
7
PACKAGE DIMENSIONS
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
bbb
N
ARCHIVE INFORMATION
R
(INSULATOR)
M
T A
M
T A
M
B
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
B
S
(LID)
ccc
H
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
1
K
2X
2
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
M
T A
R
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
C
3
E
A
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
H
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
CASE 465--06
ISSUE G
NI--780
MRF5S19100HR3
4X U
(FLANGE)
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
ARCHIVE INFORMATION
B
F
T
SEATING
PLANE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF5S19100HSR3
MRF5S19100HR3 MRF5S19100HSR3
8
Freescale Semiconductor
RF Product Device Data
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
5
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 9
• Data sheet archived. Part no longer manufactured.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The following table summarizes revisions to this document.
MRF5S19100HR3 MRF5S19100HSR3
Freescale Semiconductor
RF Product Device Data
9
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF5S19100HR3 MRF5S19100HSR3
Document Number: MRF5S19100H
Rev. 5, 10/2008
10
Freescale Semiconductor
RF Product Device Data
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