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MRF5S19100HSR3

MRF5S19100HSR3

  • 厂商:

    NXP(恩智浦)

  • 封装:

    NI-780S

  • 描述:

    FET RF 65V 1.99GHZ NI-780S

  • 数据手册
  • 价格&库存
MRF5S19100HSR3 数据手册
Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 5, 10/2008 RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., f = 1987.5 MHz, IS--95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13.9 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — --36.5 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — --50.7 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF5S19100HR3 MRF5S19100HSR3 1930--1990 MHz, 22 W AVG., 28 V 2 x N--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF5S19100HR3 CASE 465A--06, STYLE 1 NI--780S MRF5S19100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 269 1.54 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW Case Temperature 70°C, 22 W CW RθJC 0.64 0.65 ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs °C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. Freescale Semiconductor RF Product Device Data MRF5S19100HR3 MRF5S19100HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 μAdc) VGS(th) — 2.7 — Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) — 3.7 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) gfs — 6.3 — S Crss — 2.2 — pF Characteristic On Characteristics (DC) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1987.5 MHz, f2 = 1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 13.9 — dB Drain Efficiency ηD 24 25.5 — % Intermodulation Distortion IM3 — --36.5 --35 dBc ACPR — --50.7 --48 dBc IRL — --13 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics MRF5S19100HR3 MRF5S19100HSR3 2 Freescale Semiconductor RF Product Device Data B1 VBIAS R1 R2 + C3 C4 C5 W1 + R3 C7 C8 + C9 + C10 VSUPPLY C11 R4 C12 + C13 + C14 C6 Z9 Z6 Z1, Z3 Z2 Z4 Z5 Z6 Z7 Z8 Z2 Z3 C15 C16 Z4 Z5 Z8 Z10 Z11 Z12 Z7 Z13 C2 Z14 C17 RF OUTPUT C1 0.140″ x 0.080″ Microstrip 0.450″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.636″ x 0.141″ Microstrip 0.650″ x 0.050″ Microstrip 0.320″ x 1.299″ Microstrip 0.091″ x 1.133″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.590″ x 0.071″ Microstrip 0.450″ x 1.133″ Microstrip 0.450″ x 0.141″ Microstrip 0.490″ x 0.080″ Microstrip 0.085″ x 0.080″ Microstrip 1.124″ x 0.080″ Microstrip Arlon GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic Table 5. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 2743019447 Fair--Rite C1 22 pF Chip Capacitor ATC100B220CT500XT ATC C2 10 pF Chip Capacitor ATC100B100CT500XT ATC C3 1 μF, 50 V Tantalum Capacitor T494C105J050AT Kemet C4, C12 0.1 μF Chip Capacitors CDR33BX104AKYS Kemet C5, C11 1K pF Chip Capacitors ATC100B102JT500XT ATC C6 2.7 pF Chip Capacitor ATC100B2R7BT500XT ATC C7 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC C8 10 μF, 35 V Tantalum Capacitor T494D106J035AT Kemet C9, C10, C13, C14 22 μF, 35 V Tantalum Capacitors T494X226J035AT Kemet C15 0.6 – 4.5 Gigatrim Variable Capacitor 272715L Johanson C16 2.2 pF Chip Capacitor ATC100B2R2BT500XT ATC C17* 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA Vishay R3, R4 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay W1 1 turn 14 gauge wire ARCHIVE INFORMATION ARCHIVE INFORMATION RF INPUT Z1 DUT * Need for part will vary from fixture to fixture. MRF5S19100HR3 MRF5S19100HSR3 Freescale Semiconductor RF Product Device Data 3 MRF5S19100 Rev 1 C6 B1 R2 C3 C4 ARCHIVE INFORMATION W1 C16 C11 C12 VDD R4 C13 C5 C1 C15 R3 C14 C2 C17 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19100HR3(HSR3) Test Circuit Component Layout ARCHIVE INFORMATION R1 C9 C10 C7 CUT OUT AREA VGG C8 MRF5S19100HR3 MRF5S19100HSR3 4 Freescale Semiconductor RF Product Device Data 9 8 7 IRL 20 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA 2--Carrier N--CDMA, 2.5 MHz Carrier Spacing --30 --35 IM3 ACPR --40 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) --45 --50 5 --55 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 --10 --15 --20 --25 --30 --35 f, FREQUENCY (MHz) Figure 3. 2--Carrier N--CDMA Broadband Performance --15 IDQ = 1500 mA 1300 mA 1000 mA 14 760 mA 13 530 mA 12 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurement, 2.5 MHz Tone Spacing 11 10 10 1 --25 --30 1300 mA IDQ = 1500 mA --35 --40 530 mA --45 1000 mA --50 760 mA 1 100 100 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two--Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power 58 --25 --30 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurement, 2.5 MHz Tone Spacing --20 --55 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 57 Pout , OUTPUT POWER (dBm) G ps , POWER GAIN (dB) 15 IMD, INTERMODULATION DISTORTION (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 16 3rd Order --35 --40 --45 5th Order --50 7th Order --55 0.1 1 10 40 Ideal 56 P3dB = 51.98 dBm (157.81 W) 55 54 ARCHIVE INFORMATION G ps , POWER GAIN (dB) 25 11 6 ARCHIVE INFORMATION 35 30 ηD 12 10 ηD, DRAIN EFFICIENCY (%) 14 13 40 Gps IM3 (dBc), ACPR (dBc) 15 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS P1dB = 51.3 dBm (135.01 W) 53 52 Actual 51 50 49 48 47 46 VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 32 33 34 35 36 37 38 39 40 41 42 43 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 44 MRF5S19100HR3 MRF5S19100HSR3 Freescale Semiconductor RF Product Device Data 5 35 --28 --35 20 ACPR 15 Gps --42 --49 10 --56 5 --63 0 108 107 106 100 --70 75 10 1 MTTF FACTOR (HOURS x AMPS2) 25 IM3 IM3 (dBc), ACPR (dBc) 30 109 --21 ηD VDD = 28 Vdc, IDQ = 1000 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N--CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 120 140 160 180 220 200 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) AVG. This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2--Carrier N--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature N--CDMA TEST SIGNAL 0 100 10 --20 1 --IM3 in 1.2288 MHz Integrated BW --30 +IM3 in 1.2288 MHz Integrated BW --40 0.1 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 1.2288 MHz Channel BW --10 --60 --70 2 4 6 --ACPR in 30 kHz Integrated BW --80 0.0001 0 --50 8 PEAK--TO--AVERAGE (dB) Figure 10. 2--Carrier CCDF N--CDMA 10 +ACPR in 30 kHz Integrated BW --90 --100 --7.5 --6 --4.5 --3 --1.5 0 1.5 3 4.5 6 f, FREQUENCY (MHz) 7.5 ARCHIVE INFORMATION ARCHIVE INFORMATION ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS Figure 11. 2--Carrier N--CDMA Spectrum MRF5S19100HR3 MRF5S19100HSR3 6 Freescale Semiconductor RF Product Device Data Zo = 10 Ω f = 1990 MHz Zload f = 1990 MHz f = 1930 MHz Zsource ARCHIVE INFORMATION ARCHIVE INFORMATION f = 1930 MHz VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg. f MHz Zsource Ω Zload Ω 1930 4.45 -- j5.32 1.98 -- j2.58 1960 4.53 -- j5.40 1.83 -- j2.55 1990 5.12 -- j5.45 1.60 -- j2.15 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S19100HR3 MRF5S19100HSR3 Freescale Semiconductor RF Product Device Data 7 PACKAGE DIMENSIONS G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N ARCHIVE INFORMATION R (INSULATOR) M T A M T A M B M B M ccc M T A M M aaa M T A M B S (LID) ccc H (LID) M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) 1 K 2X 2 D bbb M T A M B M N (LID) ccc M M T A R M B M M B M ccc M T A M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M C 3 E A STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 -----0.040 -----0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 -----1.02 -----0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H A MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF CASE 465--06 ISSUE G NI--780 MRF5S19100HR3 4X U (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc ARCHIVE INFORMATION B F T SEATING PLANE (FLANGE) CASE 465A--06 ISSUE H NI--780S MRF5S19100HSR3 MRF5S19100HR3 MRF5S19100HSR3 8 Freescale Semiconductor RF Product Device Data PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY Revision Date 5 Oct. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 9 • Data sheet archived. Part no longer manufactured. ARCHIVE INFORMATION ARCHIVE INFORMATION The following table summarizes revisions to this document. MRF5S19100HR3 MRF5S19100HSR3 Freescale Semiconductor RF Product Device Data 9 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF5S19100HR3 MRF5S19100HSR3 Document Number: MRF5S19100H Rev. 5, 10/2008 10 Freescale Semiconductor RF Product Device Data
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