Freescale Semiconductor
Technical Data
Document Number: MRF5S19130H
Rev. 2, 5/2006
RF Power Field Effect Transistors
Designed for PCN and PCS base station applications at frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ =
1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13 dB
Drain Efficiency — 25%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S19130HR3
MRF5S19130HSR3
1930 - 1990 MHz, 26 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
438
2.50
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
160
1
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 115 W CW
Case Temperature 78°C, 26 W CW
RθJC
0.40
0.46
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19130HR3 MRF5S19130HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.7
—
pF
On Characteristics
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 26 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12
13
—
dB
Drain Efficiency
ηD
23
25
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 15
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S19130HR3 MRF5S19130HSR3
2
RF Device Data
Freescale Semiconductor
B1
R1
VBIAS
+
R2
C10
VSUPPLY
R3
+
C9
C6
C7
C16
C17
C18
C19
+
+
+
+
+
C20
C21
C22
C23
C24
C15
C8
RF
OUTPUT
Z22 Z23 Z24
Z13
RF
INPUT
DUT
Z10
Z1
Z2
Z3
Z4 Z5 Z6 Z7
Z12
Z15 Z16 Z17 Z18 Z19 Z20 Z21
Z8 Z9
C25
Z14
C1
C2
C3
C4
Z11
C5
R4
+
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10, Z11
Z12
0.200″
0.170″
0.480″
0.926″
0.590″
0.519″
0.022″
0.046″
0.080″
1.280″
0.053″
C12
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.085″
x 0.955″
x 0.955″
x 0.955″
x 0.955″
x 0.046″
x 1.080″
C14
C13
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.160″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
C26
C27
Z13, Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
PCB
C28
C29
C30
+
+
+
+
C31
C32
C33
C34
1.125″ x 0.068″ Microstrip
0.071″ x 1.080″ Microstrip
0.060″ x 1.080″ Microstrip
0.290″ x 1.080″ Microstrip
1.075″ x 0.825″ x 0.125″ Taper
0.635″ x 0.120″ Microstrip
0.185″ x 0.096″ Microstrip
0.414″ x 0.084″ Microstrip
0.040″ x 0.084″ Microstrip
0.199″ x 0.057″ Microstrip
Arlon GX0300 - 55 - 22, 0.03″, εr = 2.55
Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic
Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Short RF Bead
95F786
Newark
C1
0.8 pF Chip Capacitor
100B0R8BP 500X
ATC
C2, C4
0.6 – 4.5 pF Gigatrim Variable Capacitors
44F3358
Newark
C3
2.2 pF Chip Capacitor
100B2R2BP 500X
ATC
C5
1.7 pF Chip Capacitor
100B1R7BP 500X
ATC
C8, C13
9.1 pF Chip Capacitors
100B9R1CP 500X
ATC
C9, C11
1 μF, 25 V Tantalum Capacitors
92F1845
Newark
C10
47 μF, 50 V Electrolytic Capacitor
51F2913
Newark
C6, C14, C17, C18, C19, C28, C29, C30
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C7, C12, C16, C27
1000 pF Chip Capacitors
100B102JP 500X
ATC
C15, C26
8.2 pF Chip Capacitors
100B8R2CP 500X
ATC
C20, C21, C22, C23, C31, C32, C33, C34
22 μF, 35 V Tantalum Capacitors
92F1853
Newark
C24
470 μF, 63 V Electrolytic Capacitor
95F4579
Newark
C25
6.2 pF Chip Capacitor
100B6R2CP 500X
ATC
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electtonics
ARCHIVE INFORMATION
ARCHIVE INFORMATION
B2
MRF5S19130HR3 MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
3
C18
C10
MRF5S19130
Rev 5
B1
R1
R3
C19
C15
C20 C21
C24
C8
VGG
VDD
C16
C3
C2
C5
C4
C14
C11
ARCHIVE INFORMATION
C17
C6
B2
C12
R4
C22 C23
C25
C28
C33 C34
C27
C13
C26
C31 C32
C29 C30
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout
ARCHIVE INFORMATION
C1
C7
C9
CUT OUT AREA
R2
MRF5S19130HR3 MRF5S19130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
40
11
10
IRL
9
8
30
ηD
25
VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−20
−40
ACPR
−50
5
−60
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
−5
−10
−15
−20
−25
−30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
@ Pout = 26 Watts Avg.
16
−25
G ps , POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
15
IDQ = 1800 mA
14
1500 mA
13
12
1200 mA
900 mA
11
600 mA
10
−30
VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−35
IDQ = 1800 mA
−40
1500 mA
600 mA
−45
1200 mA
−50
−55
900 mA
−60
10
1
100
200
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation
Distortion versus Output Power
60
−25
59
58
3rd Order
−35
−40
5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−55
−60
100
Pout, OUTPUT POWER (WATTS) PEP
−20
−30
10
Figure 4. Two - Tone Power Gain versus
Output Power
0.1
1
10
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
−10
−30
IM3
7
6
20
ARCHIVE INFORMATION
12
IRL, INPUT RETURN LOSS (dB)
13
35
Gps
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
14
ηD, DRAIN
EFFICIENCY (%)
15
200
Ideal
57
56
P3dB = 53.11 dBm (205.57 W)
55
54
P1dB = 52.54 dBm (179.61 W)
53
52
Actual
51
50
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec (on), 1 msec (off)
f = 1960 MHz
49
48
35
36
37
38
39
40
41
42
43
44
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
45
MRF5S19130HR3 MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
5
35
−35
ηD
−40
ACPR
20
15
−45
−50
Gps
10
−55
5
−60
0
107
106
105
100
−65
1
108
10
120
Pout, OUTPUT POWER (WATTS) AVG. (N−CDMA)
Figure 8. 2 - Carrier N - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
140
160
180
200
TJ, JUNCTION TEMPERATURE (°C)
220
ARCHIVE INFORMATION
25
MTTF FACTOR (HOURS X AMPS2)
30
109
−30
IM3
VDD = 28 Vdc, IDQ = 1200 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
0
1.2288 MHz
Channel BW
−10
−20
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
(dB)
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
−90
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 10. 2 - Carrier N - CDMA Spectrum
MRF5S19130HR3 MRF5S19130HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 1990 MHz
Zload
f = 1930 MHz
ARCHIVE INFORMATION
f = 1990 MHz
f = 1930 MHz
VDD = 28 V, IDQ = 1.2 A, Pout = 26 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
2.57 - j9.1
1.48 - j1.8
1960
2.35 - j7.6
1.28 - j1.5
1990
3.86 - j9.2
1.42 - j1.3
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
ARCHIVE INFORMATION
Zsource
load
Figure 11. Series Equivalent Source and Load Impedance
MRF5S19130HR3 MRF5S19130HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
K
2
bbb
D
T A
M
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
ARCHIVE INFORMATION
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
(LID)
B
S
(LID)
M
(INSULATOR)
B
M
H
C
F
E
T
A
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465B - 03
ISSUE D
NI - 880
MRF5S19130HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
M
D
T A
M
B
M
bbb
M
T A
M
B
M
T A
M
B
R
(INSULATOR)
ccc
M
N
ccc
M
M
T A
M
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
3
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S19130HSR3
MRF5S19130HR3 MRF5S19130HSR3
8
RF Device Data
Freescale Semiconductor
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF5S19130HR3 MRF5S19130HSR3
Document
Number:
RF
Device
Data MRF5S19130H
Rev. 2, 5/2006Semiconductor
Freescale
9
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