MRF5S19150HSR3

Freescale Semiconductor Technical Data Document Number: MRF5S19150H Rev. 4, 10/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5S19150HR3 Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1400 mA, Avg., Pout = 32 Watts Avg., f = 1990 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 26% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 50 dB in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930- 1990 MHz, 32 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 465B - 03, STYLE 1 NI - 880 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 427 2.44 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C CW 120 0.76 W W/°C Symbol Value (1,2) Unit CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 32 W CW RθJC 0.41 0.44 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19150HR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 μAdc) VGS(th) 2.5 2.8 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 3.8 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) gfs — 9 — S Crss — 3.1 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 32 W Avg., f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14 — dB Drain Efficiency ηD 24 26 — % Intermodulation Distortion IM3 — - 36.5 - 35 dBc ACPR — - 50 - 48 dBc IRL — - 17 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF5S19150HR3 2 RF Device Data Freescale Semiconductor + C9 B1 C17 + C18 + C20 C19 R1 VBIAS R3 + R2 C8 C7 C15 C6 + C21 C16 RF OUTPUT Z11 DUT Z8 Z1 Z3 Z2 Z4 C4 Z5 Z6 VSUPPLY + C23 C14 C5 RF INPUT + C22 Z10 Z13 C24 Z14 Z15 Z7 Z12 C1 C2 C3 Z9 C26 B2 R4 + C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C27 C13 C11 C25 C28 C29 + C32 + C33 + C30 + C31 C12 1.023″ x 0.082″ Microstrip 0.398″ x 0.082″ Microstrip 0.203″ x 0.082″ Microstrip 0.074″ x 0.082″ Microstrip 0.630″ x 0.084″ Microstrip 0.557″ x 1.030″ x 0.237″ Microstrip Taper 0.103″ x 1.030″ Microstrip 1.280″ x 0.046″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 1.280″ x 0.046″ Microstrip 0.090″ x 1.055″ Microstrip 1.125″ x 0.068″ Microstrip 1.125″ x 0.068″ Microstrip 0.505″ x 1.055″ Microstrip 0.898″ x 0.105″ Microstrip 1.133″ x 0.082″ Microstrip Arlon GX0300 - 55- 22, 0.03″, εr = 2.55 Figure 1. MRF5S19150HR3 Test Circuit Schematic Table 5. MRF5S19150HR3 Test Circuit Component Designations and Values Part Description B1, B2 Short RF Beads, Fair - Rite #2743019447 C1, C2 0.6 – 4.5 Variable Capacitors, Gigatrim, Johanson #27271SL C3 0.8 pF Chip Capacitor, ATC #ATC100B0R8JT500XT C4, C5, C13, C14, C24, C25 9.1 pF Chip Capacitors, ATC #ATC100B9R1JT500XT C8, C10 1.0 μF, 50 V SMT Tantalum Capacitors, Kemet #T491C105M050AT C6, C12, C16, C17, C18, C27, C28, C29 0.1 μF Chip Capacitors, Kemet #CDR33BX104AKYS C7, C11, C15, C26 1000 pF Chip Capacitors, ATC #ATC100B102JT50XT C9 100 μF, 50 V Electrolytic Capacitor, Multicomp #MCHT101M1HB - 1017- RH C23 470 μF, 63 V Electrolytic Capacitor, Multicomp #EKME630ELL471MK25S C19, C20, C21, C22, C30, C31, C32, C33 22 μF, 35 V Tantalum Capacitors, Kemet #T491D226M035AS R1 1 kW, 1/4 W Chip Resistor, Vishay #CRCW12061001FKEA R2 560 kW, 1/4 W Chip Resistor, Vishay #CRCW12065600FKEA R3, R4 12 W, 1/4 W Chip Resistors, Vishay #CRCW120612R0FKEA MRF5S19150HR3 RF Device Data Freescale Semiconductor 3 C17 C18 C9 C19 C20 C23 C14 B1 R3 C5 R1 VGG VDD C15 R2 C7 C8 C16 C6 C21 C22 C24 C1 C3 C2 C10 B2 MRF5S19150 Rev 4 C11 R4 C12 CUT OUT AREA C4 C32 C33 C26 C27 C13 C25 C30 C31 C28 C29 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19150HR3 Test Circuit Component Layout MRF5S19150HR3 4 RF Device Data Freescale Semiconductor 14 Gps 35 13 ηD 30 12 25 VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 11 10 20 −30 IRL 9 8 −35 IM3 7 6 ACPR 5 1900 −40 1.228 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) −45 −50 1920 1940 1960 1980 −55 2020 2000 −10 −20 −30 −40 −50 −60 IRL, INPUT RETURN LOSS (dB) 40 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 15 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 32 Watts Avg. −15 IDQ = 2100 mA 1700 mA 1400 mA 14 1050 mA 13 700 mA 12 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 11 IMD, INTERMODULATION DISTORTION (dBc) 1 10 −20 −25 −40 700 mA −45 1050 mA 10 1 100 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation versus Output Power 58 3rd Order −35 5th Order −45 7th Order VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −55 1400 mA −50 −25 −50 1700 mA −35 59 −40 IDQ = 2100 mA −30 −20 −30 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing −55 −60 0.1 1 10 Pout , OUTPUT POWER (dBm) G ps , POWER GAIN (dB) 15 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 16 P3dB = 53.71 dBm (234.96 W) 57 56 55 P1dB = 53.01 dBm (199.99 W) 54 53 52 51 VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 8 μsec (on), 1 msec (off) f = 1960 MHz 50 49 35 36 37 38 39 40 41 42 43 44 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 45 MRF5S19150HR3 RF Device Data Freescale Semiconductor 5 40 35 109 −25 IM3 VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD −30 −35 30 −40 25 −45 20 ACPR 15 −50 −55 Gps 10 5 −60 −65 0 MTTF FACTOR (HOURS X AMPS2) 45 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 107 106 100 −70 10 1 108 120 Pout, OUTPUT POWER (WATTS) AVG., N−CDMA 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain, Drain Efficiency versus Output Power This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 0 1.2288 MHz Channel BW −10 −20 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW (dB) −40 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 10. 2 - Carrier N - CDMA Spectrum MRF5S19150HR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f = 1930 MHz f = 1930 MHz Zsource f = 1990 MHz VDD = 28 V, IDQ = 1400 mA, Pout = 32 W Avg. f MHz Zload Ω Zsource Ω 1930 1.89 - j5.24 1.06 - j1.58 1960 1.64 - j5.29 0.88 - j1.37 1990 1.3 - j5.49 0.90 - j1.21 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 11. Series Equivalent Source and Load Impedance MRF5S19150HR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb M D T A B M M M bbb M T A M B M ccc M T A M B M N R (INSULATOR) ccc M T A M aaa M T A M B S (LID) (LID) M (INSULATOR) B M H C F E A T A SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465B - 03 ISSUE D NI - 880 MRF5S19150HR3 MRF5S19150HR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Nov. 2008 Description • Data sheet revised to reflect part status change, p. 1 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Added Product Documentation and Revision History, p. 9 MRF5S19150HR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF5S19150HR3 Document Number: MRF5S19150H Rev. 4, 10/2008 10 RF Device Data Freescale Semiconductor