Document Number: MRF5S21045
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
Replaced by MRF5S21045NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
MRF5S21045MR1
MRF5S21045MBR1
RF Power Field Effect Transistors
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 45 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
2170 MHz, 10 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF5S21045MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF5S21045MBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
130
0.74
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
CW
45
W
Symbol
Value (1)
Unit
CW Operation
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.35
1.48
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 μAdc)
VGS(th)
2
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
2
3.8
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
0.2
—
0.35
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.2 Adc)
gfs
—
3.2
—
S
Crss
—
0.9
—
pF
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Gps
13.5
14.5
Drain Efficiency
ηD
24
25.5
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 39
- 37
dBc
IRL
—
- 12
-9
dB
Power Gain
Adjacent Channel Power Ratio
Input Return Loss
16.5
dB
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
1. Part is internally matched both on input and output.
MRF5S21045MR1 MRF5S21045MBR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
R2
C1
C2
C4
C5
Z11
Z10
Z6
+
C6
C3
Z13
R3
Z1
Z2
Z3
Z5
Z7
Z12
C7
Z9
C12
C8
ARCHIVE INFORMATION
Z4
DUT
C9
C10
Z8
RF
OUTPUT
C11
C13
C14
Z1, Z9
Z2
Z3
Z4
Z5
Z6
0.250″
0.987″
0.157″
0.375″
0.480″
0.510″
x 0.080″
x 0.080″
x 0.080″
x 0.080″
x 1.000″
x 0.080″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8, Z13
Z10
Z11
Z12
PCB
C15
0.500″ x 1.000″ Microstrip
0.270″ x 0.080″ Microstrip
0.789″ x 0.080″ Microstrip
0.527″ x 0.080″ Microstrip
0.179″ x 0.080″ Microstrip
Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 1. MRF5S21045MR1(MBR1) Test Circuit Schematic
Table 6. MRF5S21045MR1(MBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 nF Chip Capacitor (1812)
1812Y224KXA
Vishay - Vitramon
C2, C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C4, C5, C14, C15
6.8 μF Chip Capacitors (1812)
C4532X5R1H685MT
TDK
C6
220 μF, 63 V Electrolytic Capacitor, Radial
13668221
Philips
C8, C10
1 pF 100B Chip Capacitors
100B1R0BW
ATC
C9
1.5 pF 100B Chip Capacitor
100B1R5BW
ATC
C11
0.5 pF 100B Chip Capacitor
100B0R5BW
ATC
R1, R2
10 kW, 1/4 W Chip Resistors
R3
10 W, 1/4 W Chip Resistor
ARCHIVE INFORMATION
RF
INPUT
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
3
C1
C2
C4 C5
R1
C3
R2
C6
R3
C8
C9
CUT OUT AREA
C7
C10
C11
C12
C14 C15
MRF5S21045N
Rev. 0
Figure 2. MRF5S21045MR1(MBR1) Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C13
MRF5S21045MR1 MRF5S21045MBR1
4
RF Device Data
Freescale Semiconductor
24
Gps, POWER GAIN (dB)
14.8
14.6
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
Gps
14.4
14.2
IRL
14
16
−28
−32
13.8
−36
IM3
13.6
−40
ACPR
13.4
2060
2080
2100
2120
2140
2160
2180
2200
−44
2220
−10
−13
−16
−19
−22
f, FREQUENCY (MHz)
14.6
42
ηD
14.4
14.2
38
Gps
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14
13.8
IRL
13.6
34
30
−18
−22
−26
13.4
IM3
13.2
−30
ACPR
13
2060
2080
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
−34
2220
−8
−11
−14
−17
−20
IRL, INPUT RETURN LOSS (dB)
46
ηD, DRAIN
EFFICIENCY (%)
14.8
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 10 Watts
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 20 Watts
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−10
IDQ = 800 mA
16
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
20
ARCHIVE INFORMATION
28
IM3 (dBc), ACPR (dBc)
ηD
15
IRL, INPUT RETURN LOSS (dB)
32
15.2
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
650 mA
15
500 mA
14
350 mA
200 mA
13
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
12
11
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−20
IDQ = 200 mA
−30
800 mA
−40
650 mA
500 mA
−50
350 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−60
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
5
−25
54
−40
5th Order
7th Order
−50
−55
46
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
Center Frequency = 2140 MHz
30
32
34
36
38
40
TWO −TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
−30_C
25_C
17
−10
60
85_C
−30_C
25_C
IM3
85_C
25_C
−30_C
ηD
16
−20
85_C
−30
25_C ACPR
−30_C
TC = −30_C Gps
−40
25_C
85_C
10
Actual
48
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
IM3 (dBc), ACPR (dBc)
30
P1dB = 47.60 dBm (57.5 W)
42
28
100
10
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
40
20
1
50
44
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two −Tone Measurements, Center Frequency = 2140 MHz
−60
0.1
52
TC = −30_C
50
85_C
15
25_C
40
14
85_C
30
13 VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
12
20
10
−50
0
1
10
11
0.1
100
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
0
100
ARCHIVE INFORMATION
Pout, OUTPUT POWER (dBm)
−35
−45
Ideal
P3dB = 48.17 dBm (65.6 W)
3rd Order
ηD, DRAIN EFFICIENCY (%)
−30
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
14
32 V
12
28 V
24 V
10
20 V
8
16 V
IDQ = 500 mA
f = 2140 MHz
VDD = 12 V
6
0
10
20
30
40
50
60
70
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF5S21045MR1 MRF5S21045MBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
108
110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
10
0
−10
(dB)
1
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ $5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ $10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−50
4
6
−70
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25
−20
−60
0.0001
2
−30
−40
0.001
0
−20
8
10
PEAK −TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
ARCHIVE INFORMATION
107
106
90 100
PROBABILITY (%)
ARCHIVE INFORMATION
MTTF FACTOR (HOURS x AMPS2)
109
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
7
Zo = 10 Ω
f = 2200 MHz
Zsource
ARCHIVE INFORMATION
Zload
f = 2000 MHz
f = 2200 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2000
8.15 - j5.91
4.78 - j5.19
2110
7.07 - j7.32
4.04 - j4.14
2140
6.28 - j7.71
3.81 - j3.69
2170
5.61 - j7.85
3.69 - j3.39
2200
4.92 - j7.85
3.57 - j3.11
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
ARCHIVE INFORMATION
f = 2000 MHz
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S21045MR1 MRF5S21045MBR1
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S21045MR1 MRF5S21045MBR1
10
RF Device Data
Freescale Semiconductor
NOTES
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
MRF5S21045MR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5S21045MR1 MRF5S21045MBR1
12
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
13
MRF5S21045MR1 MRF5S21045MBR1
14
RF Device Data
Freescale Semiconductor
MRF5S21045MR1 MRF5S21045MBR1
RF Device Data
Freescale Semiconductor
15
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MRF5S21045MR1 MRF5S21045MBR1
Document Number: MRF5S21045
Rev. 2, 5/2006
16
RF Device Data
Freescale Semiconductor
