Document Number: MRF5S21045N
Rev. 4.1, 12/2009
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
LIFETIME BUY
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 500 mA,
Pout = 10 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead--Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF5S21045NR1
MRF5S21045NBR1
2110--2170 MHz, 10 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF5S21045NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF5S21045NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
130
0.74
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
RθJC
1.35
1.48
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2009. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF5S21045NR1 MRF5S21045NBR1
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 120 μAdc)
VGS(th)
2
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
2
3.8
5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.2 Adc)
VDS(on)
0.2
—
0.35
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1.2 Adc)
gfs
—
3.2
—
S
Crss
—
0.9
—
pF
Characteristic
LIFETIME BUY
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg., f1 = 2112.5 MHz, f2 =
2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13.5
14.5
16.5
dB
Drain Efficiency
ηD
24
25.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--39
--37
dBc
IRL
—
--12
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF5S21045NR1 MRF5S21045NBR1
2
RF Device Data
Freescale Semiconductor
R1
R2
C1
C2
C4
C5
Z11
Z10
Z6
+
C6
VSUPPLY
C3
Z13
R3
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C7
C8
Z7
Z9
C12
DUT
C9
Z12
C10
Z8
RF
OUTPUT
C11
LIFETIME BUY
C13
C14
Z1, Z9
Z2
Z3
Z4
Z5
Z6
0.250″ x 0.080″ Microstrip
0.987″ x 0.080″ Microstrip
0.157″ x 0.080″ Microstrip
0.375″ x 0.080″ Microstrip
0.480″ x 1.000″ Microstrip
0.510″ x 0.080″ Microstrip
Z7
Z8, Z13
Z10
Z11
Z12
PCB
C15
0.500″ x 1.000″ Microstrip
0.270″ x 0.080″ Microstrip
0.789″ x 0.080″ Microstrip
0.527″ x 0.080″ Microstrip
0.179″ x 0.080″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
220 nF Chip Capacitor (1812)
1812Y224KAT
AVX
C2, C3, C7, C12, C13
6.8 pF 100B Chip Capacitors
ATC100B6R8CT500XT
ATC
C4, C5, C14, C15
6.8 μF Chip Capacitors (1812)
C4532X5R1H685MT
TDK
C6
220 μF, 63 V Electrolytic Capacitor, Radial
2222--136--68221
Vishay
C8, C10
1 pF 100B Chip Capacitors
ATC100B1R0BT500XT
ATC
C9
1.5 pF 100B Chip Capacitor
ATC100B1R5BT500XT
ATC
C11
0.5 pF 100B Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VBIAS
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
3
C1
C2
C4 C5
C3
R2
C6
R3
C8
C9
CUT OUT AREA
C7
C10
C11
C12
C13
LIFETIME BUY
C14 C15
MRF5S21045N
Rev. 0
Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R1
MRF5S21045NR1 MRF5S21045NBR1
4
RF Device Data
Freescale Semiconductor
24
Gps, POWER GAIN (dB)
14.8
14.6
VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
Gps
14.4
14.2
IRL
14
13.8
13.6
16
--28
--32
--36
IM3
--40
ACPR
13.4
2060
20
2080
2100
2120
2140
2160
2180
2200
--44
2220
--10
--13
--16
--19
--22
IRL, INPUT RETURN LOSS (dB)
28
ηD
IM3 (dBc), ACPR (dBc)
15
ηD, DRAIN
EFFICIENCY (%)
32
15.2
14.6
42
14.2
Gps
14
13.8
38
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 500 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
13.6
13.4
--18
--26
--30
ACPR
2080
30
--22
IM3
13
2060
34
2100
2120 2140 2160
f, FREQUENCY (MHz)
2180
2200
--34
2220
IM3 (dBc), ACPR (dBc)
ηD
14.4
--8
--11
--14
--17
--20
IRL, INPUT RETURN LOSS (dB)
46
13.2
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 20 Watts
17
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 800 mA
16
Gps, POWER GAIN (dB)
14.8
ηD, DRAIN
EFFICIENCY (%)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 10 Watts
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
650 mA
15
500 mA
14
350 mA
200 mA
13
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements
12
11
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
--20
IDQ = 200 mA
--30
800 mA
--40
650 mA
--50
350 mA
500 mA
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements
--60
1
10
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
5
54
Pout, OUTPUT POWER (dBm)
--35
--40
5th Order
--45
7th Order
--50
--55
--60
0.1
1
P1dB = 47.60 dBm (57.5 W)
Actual
48
46
VDD = 28 Vdc, IDQ = 500 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
44
30
32
34
36
38
40
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus
Input Power
25_C
--30_C
ηD
17
--10
85_C
IM3
85_C
25_C
--30_C
--40
25_C
16
--20
85_C
--30
25_C ACPR
--30_C
85_C
0
10
--30_C
TC = --30_C
15
25_C
14
85_C
13
12
--50
1
50
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
TC = --30_C Gps
10
52
42
28
100
10
IM3 (dBc), ACPR (dBc)
30
20
VDD = 28 Vdc, Pout = 45 W (PEP), IDQ = 500 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
VDD = 28 Vdc, IDQ = 500 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W--CDMA, 10 MHz
@ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
40
Ideal
P3dB = 48.17 dBm (65.6 W)
3rd Order
25_C
40
30
VDD = 28 Vdc
IDQ = 500 mA
f = 2140 MHz
20
10
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
16
Gps, POWER GAIN (dB)
14
32 V
12
28 V
24 V
10
20 V
8
6
16 V
IDQ = 500 mA
f = 2140 MHz
VDD = 12 V
10
0
20
30
40
50
60
50
85_C
11
0.1
100
60
70
Pout, OUTPUT POWER (WATTS) CW
80
0
100
ηD, DRAIN EFFICIENCY (%)
--30
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
--25
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Figure 11. Power Gain versus Output Power
MRF5S21045NR1 MRF5S21045NBR1
6
RF Device Data
Freescale Semiconductor
MTTF FACTOR (HOURS x AMPS2)
109
108
107
110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
100
+20
10
0
--10
1
0.1
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
0
2
4
6
--20
--30
--40
--50
--70
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--80
--25
--20
--60
0.001
0.0001
3.84 MHz
Channel BW
+30
(dB)
PROBABILITY (%)
LIFETIME BUY
106
90 100
8
10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
25
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
7
f = 2200 MHz
f = 2000 MHz
Zsource
Zload
LIFETIME BUY
f = 2000 MHz
f = 2200 MHz
VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2000
8.15 -- j5.91
4.78 -- j5.19
2110
7.07 -- j7.32
4.04 -- j4.14
2140
6.28 -- j7.71
3.81 -- j3.69
2170
5.61 -- j7.85
3.69 -- j3.39
2200
4.92 -- j7.85
3.57 -- j3.11
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Zo = 10 Ω
Figure 15. Series Equivalent Source and Load Impedance
MRF5S21045NR1 MRF5S21045NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
9
MRF5S21045NR1 MRF5S21045NBR1
10
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
11
MRF5S21045NR1 MRF5S21045NBR1
12
RF Device Data
Freescale Semiconductor
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
13
MRF5S21045NR1 MRF5S21045NBR1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
4
Oct. 2008
LIFETIME BUY
Revision
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 15
4.1
Dec. 2009
• Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change
Notification number, PCN12779, p. 2
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
MRF5S21045NR1 MRF5S21045NBR1
RF Device Data
Freescale Semiconductor
15
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MRF5S21045NR1 MRF5S21045NBR1
Document Number: MRF5S21045N
Rev. 4.1, 12/2009
16
RF Device Data
Freescale Semiconductor
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