Freescale Semiconductor
Technical Data
Document Number: MRF5S21090H
Rev. 3, 10/2008
RF Power Field Effect Transistors
MRF5S21090HR3
MRF5S21090HSR3
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,
Pout = 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40.5 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110--2170 MHz, 19 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S21090HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S21090HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
269
1.5
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 76°C, 19 W CW
RθJC
0.65
0.69
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21090HR3 MRF5S21090HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2.5
2.9
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
3.9
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.25
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Crss
—
1.7
—
pF
Characteristic
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg., f = 2112.5 MHz,
2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
14.5
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
IM3
—
--37.5
--35
dBc
ACPR
—
--40.5
--38
dBc
IRL
—
--15
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S21090HR3 MRF5S21090HSR3
2
RF Device Data
Freescale Semiconductor
C3
R1
R4
R3
C4
R2
C7
C10
C5
C8
C9
Z4
RF
INPUT
Z1
Z2
ARCHIVE INFORMATION
C14
Z3
Z8
Z6
DUT
Z10
W1
Z13
Z9
C6
C11
Z11 Z12
Z18
Z16
Z15
Z7
C2
C1
Z17
+
C13
C12
VSUPPLY
Z20
Z19
Z21
RF
OUTPUT
C15
Z14
Z5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
1.0856″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.347″ x 0.208″ Microstrip
0.090″ x 0.208″ Microstrip
0.650″ x 0.176″ Taper
0.623″ x 0.610″ Microstrip
0.044″ x 0.881″ Microstrip
0.044″ x 0.869″ Microstrip
1.076″ x 0.446″ Microstrip
0.320″ x 0.393″ Microstrip
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
PCB
0.609″ x 0.220″ Microstrip
0.290″ x 0.106″ Microstrip
0.290″ x 0.106″ Microstrip
0.080″ x 0.025″ Microstrip
1.080″ x 0.160″ Microstrip
0.180″ x 0.080″ Microstrip
0.260″ x 0.147″ Microstrip
0.500″ x 0.080″ Microstrip
0.199″ x 0.147″ Microstrip
0.365″ x 0.080″ Microstrip
Arlon GX0300--55--22, 0.03″, εr = 2.55
Figure 1. MRF5S21090HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21090HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C2
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C3
2.0 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKYS
Kemet
C5
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C6
5.1 pF Chip Capacitor
ATC100B5R1CT500XT
ATC
C7
7.5 pF Chip Capacitor
ATC100B7R5JT500XT
ATC
C8
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C9, C10
0.56 μF Chip Capacitors
700A561MT150XT
ATC
C11
1000 pF Chip Capacitor
ATC100B102JT500XT
ATC
C13
470 μF, 35 V Electrolytic Capacitor
EKME630ELL471MK25S
Nippon Chemi--Con
C14, C15
0.4 – 2.5 Variable Capacitors, Gigatrim
27281SL
Johanson
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3, R4
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
W1
Wire Strap
ARCHIVE INFORMATION
VBIAS
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
3
C4
R2
C10
C9
R3
C11
C6
C2
CUT OUT AREA
ARCHIVE INFORMATION
VDD
W1
C12
C1
C14
R4
C15
MRF5S21090
Rev 5
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S21090HR3(HSR3) Test Circuit Component Layout
ARCHIVE INFORMATION
R1
VGG
C13
C7 C8
C3 C5
MRF5S21090HR3 MRF5S21090HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
12
30
25
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
20
10
--20
9
--25
8
--30
IM3
7
6
--35
--40
ACPR
5
2080
2100
2120
2140
2160
--45
2200
2180
--10
--15
--20
--25
--30
--35
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
--15
IDQ = 1200 mA
G ps , POWER GAIN (dB)
16
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
1000 mA
15
850 mA
14
650 mA
13
450 mA
IMD,THIRD ORDER
INTERMODULATION DISTORTION (dBc)
17
--20
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
--25
--30
IDQ = 450 mA
1200 mA
--35
--40
1000 mA
--45
1
10
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
--20
57
--25
3rd Order
--30
--35
5th Order
--40
--45
7th Order
--50
--55
--60
0.1
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
1
10
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
850 mA
650 mA
--50
12
Ideal
55
P3dB = 51.17 dBm (130.9 W)
53
51 P1dB = 50.47 dBm (111.4 W)
ARCHIVE INFORMATION
ηD
11
35
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
13
ηD, DRAIN
EFFICIENCY (%)
14
ARCHIVE INFORMATION
40
Gps
IM3 (dBc), ACPR (dBc)
15
Actual
49
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
47
45
30
32
34
36
38
40
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
42
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
5
--25
20
15
10
--30
ηD
25
--35
Gps
--40
IM3
ACPR
--45
--50
5
0
1
107
106
100
--55
10
108
120
Pout, POWER (WATTS) W--CDMA
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
--20
100
3.84 MHz
Channel BW
--30
10
--40
--50
1
--60
0.1
--70
--80
0.01
--90
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
.0001
0
2
4
6
--100
--110
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
--120
--25
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--20
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
25
ARCHIVE INFORMATION
30
--20
MTTF FACTOR (HOURS x AMPS2)
35
109
--15
VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W--CDMA, 10 MHz
@ 3.84 MHz Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
40
(dB)
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
MRF5S21090HR3 MRF5S21090HSR3
6
RF Device Data
Freescale Semiconductor
f = 2200 MHz
f = 2100 MHz
Zo = 10 Ω
Zload
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2200 MHz
f = 2100 MHz
Zsource
VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2100
3.4 -- j5.1
2.4 -- j2.0
2120
3.2 -- j5.4
2.2 -- j2.1
2160
3.0 -- j4.4
2.1 -- j1.9
2200
3.0 -- j4.0
1.8 -- j1.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
ARCHIVE INFORMATION
N
M
T A
M
T A
M
B
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465--06
ISSUE G
NI--780
MRF5S21090HR3
4X U
(FLANGE)
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
M
T A
M
B
R
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
B
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF5S21090HSR3
MRF5S21090HR3 MRF5S21090HSR3
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
3
Oct. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 9
Dec. 2010
• Data sheet archived. Parts no longer manufactured.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The following table summarizes revisions to this document.
MRF5S21090HR3 MRF5S21090HSR3
RF Device Data
Freescale Semiconductor
9
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.
MRF5S21090HR3 MRF5S21090HSR3
Document Number: MRF5S21090H
Rev. 3, 10/2008
10
RF Device Data
Freescale Semiconductor
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