Freescale Semiconductor
Technical Data
Document Number: MRF5S21100H
Rev. 4, 12/2010
RF Power Field Effect Transistors
MRF5S21100HR3
MRF5S21100HSR3
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,
Pout = 23 Watts Avg., f = 2167.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110--2170 MHz, 23 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF5S21100HR3
CASE 465A--06, STYLE 1
NI--780S
MRF5S21100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
273
1.56
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 78°C, 23 W CW
RθJC
0.57
0.64
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21100HR3 MRF5S21100HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
0.5
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
2.5
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 2.5 Adc)
VDS(on)
—
0.24
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.5 Adc)
gfs
—
6
—
S
Crss
—
2.14
—
pF
Characteristic
On Characteristics (DC)
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2157.5 MHz, f2 =
2167.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12.5
13.5
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--40
--38
dBc
IRL
—
--16
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S21100HR3 MRF5S21100HSR3
2
RF Device Data
Freescale Semiconductor
R4
VBIAS
B1
R1
+
C12
R2
C5
C10
C9
C4
C3
R3
RF
INPUT
Z2
C13
Z3
Z4
Z5
C7
W1
Z16
Z10 Z11 Z12 Z13 Z14
Z9
VSUPPLY
+
C11
C8
Z8
Z7
Z1
C6
Z6
Z15
C2
Z17
RF
OUTPUT
C15
C14 C1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.674″ x 0.080″ Microstrip
0.421″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
1.031″ x 0.080″ Microstrip
0.380″ x 0.643″ Microstrip
0.080″ x 0.643″ Microstrip
0.927″ x 0.048″ Microstrip
0.620″ x 0.048″ Microstrip
0.079″ x 1.136″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.368″ x 1.136″ Microstrip
0.151″ x 0.393″ Microstrip
0.280″ x 0.220″ Microstrip
0.481″ x 0.142″ Microstrip
0.138″ x 0.080″ Microstrip
0.344″ x 0.080″ Microstrip
0.147″ x 0.099″ Microstrip
0.859″ x 0.080″ Microstrip
Arlon GX--0300--SS--22, 0.030″, εr = 2.55
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair--Rite
C1, C2
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C3
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C4
0.1 μF Chip Capacitor
C1210C104J5RAC
Kemet
C5, C7
7.5 pF Chip Capacitors
ATC100B7R5JT500XT
ATC
C6
1.2 pF Chip Capacitor
ATC100B1R2BT500XT
ATC
C8
1K pF Chip Capacitor
ATC100B102JT500XT
ATC
C9, C10
0.56 μF Chip Capacitors
C1825C564J5RAC
Kemet
C11
470 μF, 63 V Electrolytic Capacitor
EKME630ELL471MK25S
Multicomp
C12
100 μF, 50 V Electrolytic Capacitor
MCHT101M1HB--1017--RH
Multicomp
C13
0.6--4.5 pF Gigatrim Variable Capacitor
27271SL
Johanson
C14
2.7 pF Chip Capacitor
ATC100B2R7CT500XT
ATC
C15
0.4--2.5 pF Gigatrim Variable Capacitor
27271SL
Johanson
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
560 kΩ, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
R3, R4
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
ARCHIVE INFORMATION
ARCHIVE INFORMATION
DUT
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
3
VGG
C5 C6
C9
R1
B1
R2
R3
R4
C3
C10
C4
C2
CUT OUT AREA
ARCHIVE INFORMATION
C14
VDD
W1
C7 C8
C1
C13
C11
C15
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
ARCHIVE INFORMATION
C12
MRF5S21100HR3 MRF5S21100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB)
30
ηD
12
11
10
IRL
9
8
20
--20
--25
--30
IM3
7
--35
6
--40
ACPR
5
--45
2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
0
--10
--20
--30
--40
--50
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
--15
15
IDQ = 1400 mA
1250 mA
14
13
1050 mA
850 mA
650 mA
12
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
11
10
1
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
G ps , POWER GAIN (dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
--20
--25
--30
IDQ = 1400 mA
--35
--40
1250 mA
--45
650 mA
--55
10
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
--20
56
--25
55
3rd Order
--35
--40
5th Order
--45
7th Order
--50
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1050 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--55
--60
0.1
1
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
--30
1050 mA
850 mA
--50
100
10
Pout , OUTPUT POWER (dBm)
ARCHIVE INFORMATION
25
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1050 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
ARCHIVE INFORMATION
35
Gps
13
IRL, INPUT RETURN LOSS (dB)
14
ηD, DRAIN
EFFICIENCY (%)
40
IM3 (dBc), ACPR (dBc)
15
Ideal
P3dB = 51.88 dBm (154.17 W)
54
53
P1dB = 51.18 dBm (131.22 W)
52
Actual
51
50
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8 μsec(on), 1msec(off)
f = 2140 MHz
49
48
34
35
36
37
38
39
40
41
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
42
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
5
109
--15
30
--20
ηD
--25
IM3
25
20
--30
--35
Gps
15
--40
10
ACPR
5
--45
--50
0
IM3 (dBc), ACPR (dBc)
VDD = 28 Vdc, IDQ = 1050 mA
f1 = 2135 MHz, f2 = 2145 MHz
2x W--CDMA, 10 MHz @ 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
35
MTTF FACTOR (HOURS x AMPS2)
40
107
106
100
--55
1
108
10
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (_C)
Pout, OUTPUT POWER (WATTS) AVG. W--CDMA
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
--20
100
10
--40
--50
1
--60
(dB)
PROBABILITY (%)
3.84 MHz
Channel BW
--30
0.1
--70
--80
0.01
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
--90
--100
--110
0.0001
0
2
4
6
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
--120
--25
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--20
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
25
MRF5S21100HR3 MRF5S21100HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zload
ARCHIVE INFORMATION
Zsource
f = 2200 MHz
f = 2100 MHz
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2100
3.4 -- j7.2
1.2 -- j2.1
2120
3.4 -- j6.5
1.4 -- j2.3
2160
4.9 -- j7.0
2.2 -- j3.0
2200
3.4 -- j8.6
1.7 -- j2.1
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
ARCHIVE INFORMATION
f = 2200 MHz
f = 2100 MHz
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
ARCHIVE INFORMATION
N
M
T A
M
T A
M
B
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
(FLANGE)
1
K
2X
2
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
M
T A
R
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
CASE 465--06
ISSUE G
NI--780
MRF5S21100HR3
4X U
(FLANGE)
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
F
T
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
B
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
SEATING
PLANE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF5S21100HSR3
MRF5S21100HR3 MRF5S21100HSR3
8
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
4
Dec. 2010
Description
• Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Revision History, p. 9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
• Data sheet archived. Parts no longer manufactured.
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
9
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MRF5S21100HR3 MRF5S21100HSR3
Document Number: MRF5S21100H
Rev. 4, 12/2010
10
RF Device Data
Freescale Semiconductor