Freescale Semiconductor
Technical Data
MRF5S21130H
Rev. 4, 12/2010
RF Power Field Effect Transistors
MRF5S21130HR3
MRF5S21130HSR3
Designed for W--CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 28 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110--2170 MHz, 28 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465B--03, STYLE 1
NI--880
MRF5S21130HR3
CASE 465C--02, STYLE 1
NI--880S
MRF5S21130HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
372
2.13
W
W/°C
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
100
0.54
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N--Channel Enhancement--Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 76°C, 28 W CW
RθJC
0.44
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2006, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M4 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
7.5
—
S
Crss
—
2.6
—
pF
Characteristic
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
12
13.5
—
dB
Drain Efficiency
ηD
24
26
—
%
Intermodulation Distortion
IM3
--37
--35
dBc
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
ACPR
—
--39
--37
dBc
IRL
—
--12
--9
dB
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S21130HR3 MRF5S21130HSR3
2
RF Device Data
Freescale Semiconductor
R1
+
C1
R2
C3
Z9
Z7
Z2
C7
Z3
Z4
DUT
Z8
Z11
ARCHIVE INFORMATION
C18
Z12
Z13
Z14
Z15
C17
Z10
Z6
VSUPPLY
Z16
RF
OUTPUT
C19
C10
C6
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
+
C20
Z5
C8
+
C2
+
C15
C9
C5
RF
INPUT Z1
+
C13
C11
C12
C4
0.500″ x 0.083″ Microstrip
0.995″ x 0.083″ Microstrip
0.905″ x 0.083″ Microstrip
0.159″ x 1.024″ Microstrip
0.117″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.000″ Microstrip
Z9, Z10
Z11
Z12
Z13
Z14, Z15
Z16
PCB
+
C14
+
C16
0.709″ x 0.083″ Microstrip
0.415″ x 1.000″ Microstrip
0.531″ x 0.083″ Microstrip
0.994″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic
Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2, C13, C14, C15, C16
10 μF, 35 V Tantalum Capacitors
T491D106M035AT
Kemet
C3, C4, C11, C12
220 nF Chip Capacitors (1812)
1812Y224KAT
AVX
C5, C6, C7, C9, C10, C18, C19
6.8 pF 100B Chip Capacitors
ATC100B6R8CT500XT
ATC
C8
0.1 pF 100B Chip Capacitor
ATC100B0R1BT500XT
ATC
C17
0.5 pF 100B Chip Capacitor
ATC100B0R5BT500XT
ATC
C20
220 μF, 63 V Electrolytic Capacitor, Radial
2222--136--68221
Vishay
R1, R2
1 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
ARCHIVE INFORMATION
VBIAS
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
3
C1
C9
C3
R1
R2
C20
C13 C15
C5
CUT OUT AREA
C7
C11
C8
C18
C17
C19
C2
C4
C10
C12
C14 C16
MRF5S21130
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C6
MRF5S21130HR3 MRF5S21130HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
11
10
IRL
20
--28
9
--32
IM3
8
--36
ACPR
6
2060
2080
--40
2100
2120
2140
2160
2180
--44
2220
2200
--10
--15
--20
--25
--30
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance
@ Pout = 28 Watts Avg.
15
--25
14.5
1400 mA
14
1200 mA
13.5
1000 mA
G ps , POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1600 mA
800 mA
13
12.5
12
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurement, 10 MHz Tone Spacing
11.5
11
10
1
100
--30
--35
IDQ = 1600 mA
--40
1400 mA
1200 mA
--45
--50
800 mA
--55
1000 mA
--60
--65
1000
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two--Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
57
--25
3rd Order
--30
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two--Tone Measurement,
10 MHz Tone Spacing
--35
--40
5th Order
--45
7th Order
--50
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
--55
--60
0.1
1
10
100
55
Ideal
P3dB = 52.58 dBm (181.1 W)
P1dB = 51.88 dBm (154.17 W)
53
ARCHIVE INFORMATION
25
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL, INPUT RETURN LOSS (dB)
12
7
ARCHIVE INFORMATION
30
ηD
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
13
ηD, DRAIN
EFFICIENCY (%)
35
Gps
Actual
51
49
47
33
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
34
35 36
37
38
39
40
41
42
43
44
45
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
46
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
5
25
20
ηD
--25
--30
IM3
--35
Gps
15
--40
10
--45
5
--50
0
5
10
15
20
25
30
35
40
MTTF FACTOR (HOURS x AMPS 2)
30
109
--20
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
ACPR
IM3 (dBc), ACPR (dBc)
35
108
107
106
100
--55
45
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) AVG. (W--CDMA)
Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Figure 9. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
--20
100
10
--40
--50
1
--60
(dB)
PROBABILITY (%)
3.84 MHz
Channel BW
--30
0.1
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
0.001
--90
2
4
6
--110
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--120
--25
--20
--100
0.0001
0
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 11. 2-Carrier W-CDMA Spectrum
25
MRF5S21130HR3 MRF5S21130HSR3
6
RF Device Data
Freescale Semiconductor
f = 2200 MHz
Zload
Zo = 25 Ω
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2080 MHz
f = 2080 MHz
f = 2200 MHz
Zsource
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
2.87 -- j9.49
1.51 -- j2.97
2110
3.13 -- j9.86
1.52 -- j2.54
2140
4.05 -- j10.90
1.59 -- j2.68
2170
4.80 -- j11.75
1.62 -- j2.70
2200
5.55 -- j11.87
1.54 -- j3.13
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
B
M
M
(INSULATOR)
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
ARCHIVE INFORMATION
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
(FLANGE)
CASE 465B--03
ISSUE D
NI--880
MRF5S21130HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
K
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
ccc
M
T A
M
B
ccc
M
N
R
M
T A
M
aaa
M
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
B
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
CASE 465C--02
ISSUE D
NI--880S
MRF5S21130HSR3
MRF5S21130HR3 MRF5S21130HSR3
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
4
Dec. 2010
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 9
• Data sheet archived. Part no longer manufactured.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The following table summarizes revisions to this document.
MRF5S21130HR3 MRF5S21130HSR3
RF Device Data
Freescale Semiconductor
9
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ARCHIVE INFORMATION
ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2006, 2010. All rights reserved.
MRF5S21130HR3 MRF5S21130HSR3
MRF5S21130H
Rev. 4, 12/2010
10
RF Device Data
Freescale Semiconductor
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