Freescale Semiconductor
Technical Data
MRF5S21150H
Rev. 1, 5/2006
RF Power Field Effect Transistors
MRF5S21150HR3
MRF5S21150HSR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,
Pout = 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 33 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF5S21150HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S21150HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
380
2.2
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
CW
150
0.84
W
W/°C
Symbol
Value (1,2)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
RθJC
0.46
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 360 μAdc)
VGS(th)
2.5
—
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1300 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
—
0.26
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3.6 Adc)
gfs
—
9
—
S
Crss
—
3.2
—
pF
Characteristic
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
11
12.5
—
dB
Drain Efficiency
ηD
23
25
—
%
Intermodulation Distortion
IM3
- 37
- 35
dBc
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
ACPR
—
- 39
- 37
dBc
IRL
—
- 12
-9
dB
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
MRF5S21150HR3 MRF5S21150HSR3
2
RF Device Data
Freescale Semiconductor
R1
Vbias
+
C1
C10
C5
R2
Z6
Z1
Z2
Z3
Z4
Z5
Z10
Z12
Z9
C4
+
C20
Vsupply
C19
Z13
Z14
Z8
C3
Z15
Z16
Z17
RF
OUTPUT
C17
Z11
C2
+
C12
C9
C6
RF
INPUT
+
C11
C18
Z7
C13
DUT
C8
C14
+
C15
+
C16
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
0.500″ x 0.083″ Microstrip
0.505″ x 0.083″ Microstrip
0.536″ x 0.083″ Microstrip
0.776″ x 0.083″ Microstrip
0.119″ x 1.024″ Microstrip
0.749″ x 0.083″ Microstrip
0.117″ x 1.024″ Microstrip
0.117″ x 1.100″ Microstrip
Z10, Z11
Z12
Z13
Z14
Z15, Z16
Z17
PCB
0.709″ x 0.083″ Microstrip
0.415″ x 1.100″ Microstrip
0.874″ x 0.083″ Microstrip
1.182″ x 0.083″ Microstrip
0.070″ x 0.220″ Microstrip
0.430″ x 0.083″ Microstrip
Taconic TLX8, 0.030″, εr = 2.55
Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic
Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 μF, 35 V Tantalum Capacitor
TAJE226M035R
AVX
C2, C6, C8, C9, C13, C18,
C19
6.8 pF 100B Chip Capacitors
100B6R8CW
ATC
C3,C4
1.8 pF 100B Chip Capacitors
100B1R8BW
ATC
C5, C7, C10, C14
220 nF Chip Capacitors (1812)
1812Y224KXA
Vishay - Vitramon
C11, C12, C15, C16
10 μF, 35 V Tantalum Capacitors
293D1106X9035D
Vishay - Sprague
C17
0.3 pF Chip Capacitor
100B0R3BW
ATC
C20
470 μF, 63 V Electrolytic Capacitor, Radial
13661471
Philips
R1, R2
10 kW, 1/4 W Chip Resistors
ARCHIVE INFORMATION
ARCHIVE INFORMATION
C7
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
3
C20
C1
C9
C5
C10
C11 C12
R1
R2
C6
C4
C3
ARCHIVE INFORMATION
C8
C7
C17
C13
C14
C15 C16
C18
MRF5S21150
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21150HR3(HSR3) Test Circuit Component Layout
ARCHIVE INFORMATION
C2
CUT OUT AREA
C19
MRF5S21150HR3 MRF5S21150HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
13
IRL
9
20
−28
8
7
−32
−36
IM3
ACPR
5
2060
−40
2080
2100
2120
2140
2160
2180
−44
2220
2200
−10
−15
−20
−25
−30
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 33 Watts Avg.
−25
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
14
G ps , POWER GAIN (dB)
IDQ = 1900 mA
1600 mA
13
1300 mA
1000 mA
12
11
700 mA
10
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
10
1
100
−30
1900 mA
−35
IDQ = 700 mA
−40
1600 mA
1300 mA
−45
−50
1000 mA
−55
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−60
−65
1000
1
10
Figure 4. Two - Tone Power Gain versus
Output Power
1000
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
58
3rd Order
−30
Ideal
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
−35
−40
5th Order
−45
7th Order
−50
VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1300 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−55
−60
0.1
1
10
100
56
54
P3dB = 53.41 dBm (219.28 W)
ARCHIVE INFORMATION
10
25
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1300 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
IRL, INPUT RETURN LOSS (dB)
11
6
ARCHIVE INFORMATION
30
ηD
IM3 (dBc), ACPR (dBc)
G ps , POWER GAIN (dB)
12
ηD, DRAIN
EFFICIENCY (%)
35
Gps
P1dB = 52.73 dBm (187.5 W)
Actual
52
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
50
48
35
37
39
41
43
45
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
47
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
5
109
−30
IM3
20
ACPR
ηD
15
−35
−40
Gps
10
−45
5
−50
0
1
107
106
100
−55
100
10
108
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
ARCHIVE INFORMATION
25
MTTF FACTOR (HOURS x AMPS2)
−25
VDD = 28 Vdc, IDQ = 1300 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
30
Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 9. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
−20
100
3.84 MHz
Channel BW
−30
10
−40
−50
1
−60
(dB)
PROBABILITY (%)
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
0.001
−90
2
4
6
−110
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−120
−25
−20
−100
0.0001
0
−70
−80
8
10
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
25
Figure 11. 2-Carrier W-CDMA Spectrum
MRF5S21150HR3 MRF5S21150HSR3
6
RF Device Data
Freescale Semiconductor
f = 2200 MHz
Zload
Zo = 25 Ω
f = 2080 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 2080 MHz
f = 2200 MHz
Zsource
VDD = 28 Vdc, IDQ = 1300 mA, Pout = 33 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2080
3.05 - j9.66
1.02 - j2.94
2110
3.97 - j10.31
1.09 - j2.51
2140
4.70 - j11.03
1.16 - j2.46
2170
5.45 - j12.41
1.16 - j2.58
2200
6.18 - j13.04
1.02 - j2.55
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
7
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF5S21150HR3 MRF5S21150HSR3
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF5S21150HR3 MRF5S21150HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
bbb
M
ccc
M
M
D
T A
B
M
M
(INSULATOR)
M
T A
M
B
M
T A
M
B
M
ARCHIVE INFORMATION
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
(LID)
M
(INSULATOR)
B
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
M
D
T A
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE D
NI - 880
MRF5S21150HR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
bbb
M
T A
M
B
ccc
M
T A
M
B
B
M
M
(INSULATOR)
M
N
R
ccc
M
T A
M
aaa
M
T A
M
S
(LID)
M
B
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
ARCHIVE INFORMATION
B
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF5S21150HSR3
MRF5S21150HR3 MRF5S21150HSR3
RF Device Data
Freescale Semiconductor
11
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ARCHIVE INFORMATION
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© Freescale Semiconductor, Inc. 2006, 2009. All rights reserved.
MRF5S21150HR3 MRF5S21150HSR3
MRF5S21150H
Rev. 1, 5/2006
12
RF Device Data
Freescale Semiconductor
