Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF5S4125NR1
MRF5S4125NBR1
LIFETIME BUY
Designed for broadband commercial and industrial applications with
frequencies up to 500 MHz. The high gain and broadband performance of
these devices make them ideal for large--signal, common--source amplifier
applications in 28 volt base station equipment.
• Typical Single--Carrier N--CDMA Performance @ 465 MHz: VDD = 28 Volts,
IDQ = 1100 mA, Pout = 25 Watts Avg., IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 30.2%
ACPR @ 750 kHz Offset — --47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
450--480 MHz, 25 W AVG., 28 V
SINGLE N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
MRF5S4125NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
MRF5S4125NBR1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--0.5, +15
Vdc
Tstg
-- 65 to +150
°C
TJ
200
°C
Symbol
Value (2,3)
Unit
Storage Temperature Range
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 90°C, 125 W CW
Case Temperature 90°C, 25 W CW
RθJC
0.33
0.43
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Document Number: MRF5S4125N
Rev. 0, 1/2007
MRF5S4125NR1 MRF5S4125NBR1
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGS(Q)
3.5
4.25
5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.5 Adc)
VDS(on)
0.05
0.175
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.41
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
74.61
—
pF
Characteristic
LIFETIME BUY
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg. N--CDMA, f = 465 MHz,
Single--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
22
23
25
dB
Drain Efficiency
ηD
28
30.2
—
%
ACPR
—
--47.6
--45
dBc
IRL
—
--15
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally input matched.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF5S4125NR1 MRF5S4125NBR1
2
RF Device Data
Freescale Semiconductor
B1
+
R2
C5
C6
C14
C13
B2
C15
C16
Z19
L3
RF
INPUT
R3
Z1
L1
Z2
Z6
Z7
L2
Z8
Z3
Z4
Z5
Z1
Z2
Z3
Z4
Z5
Z6, Z7
Z8
Z9
Z10
Z11
Z12
C3
Z12
Z13
Z18
Z14
DUT
C2
Z11
Z9
C1
LIFETIME BUY
Z10
C7
C9
Z15
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
PCB
Z20
C11
C8
C4
0.186″ x 0.084″ Microstrip
0.206″ x 0.084″ Microstrip
1.171″ x 0.084″ Microstrip
0.275″ x 0.084″ Microstrip
0.985″ x 0.084″ Microstrip
0.130″ x 0.084″ Microstrip
0.131″ x 0.084″ Microstrip
0.675″ x 0.504″ Microstrip
0.397″ x 0.656″ Microstrip
0.071″ x 0.084″ Microstrip
0.008″ x 0.084″ Microstrip
VSUPPLY
Z21
C12
C10
Z16
Z22
RF
OUTPUT
Z17
0.063″ x 0.084″ Microstrip
0.315″ x 0.084″ Microstrip
0.473″ x 0.084″ Microstrip
0.522″ x 0.084″ Microstrip
0.448″ x 0.084″ Microstrip
0.628″ x 0.084″ Microstrip
0.291″ x 0.084″ Microstrip
0.318″ x 0.084″ Microstrip
0.202″ x 0.084″ Microstrip
0.190″ x 0.084″ Microstrip
Arlon AD250, 0.030″, εr = 2.5
Figure 1. MRF5S4125NR1(NBR1) Test Circuit Schematic
Table 6. MRF5S4125NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair--Rite
C1, C6, C12, C13
120 pF Chip Capacitors
ATC600B121BT250XT
ATC
C2, C10
0.8--8.0 pF, Variable Capacitors, Gigatrim
27291SL
Johanson
C3, C9
20 pF Chip Capacitors
ATC600B200BT250XT
ATC
C4
8.2 pF Chip Capacitor
ATC600B8R2BT250XT
ATC
C5, C14, C15
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
27 pF Chip Capacitor
ATC600B270BT250XT
ATC
C8
47 pF Chip Capacitor
ATC600B470BT250XT
ATC
C11
3.3 pF Chip Capacitor
ATC600B3R3BT250XT
ATC
C16
22 μF, 35 V Tantalum Capacitor
T491X226K035A5
Kemet
L1, L2
1.6 nH Inductors
0906--2
Coilcraft
L3
27 nH Inductor
1812SMS--27N_L
Coilcraft
R1
1000 Ω, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKTA
Vishay
R3
100 Ω, 1/4 W Chip Resistor
CRCW1206100RFKTA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R1
VBIAS
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
3
B1
R1
C15
C16
B2
R2
C13
R3
L1
C1
C2
L2
C3
C4
CUT OUT AREA
C5
L3
C8
C7
C12
C9
LIFETIME BUY
C11
C10
MRF5S4125N
Rev. 1
Figure 2. MRF5S4125NR1(NBR1) Test Circuit Component Layout
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C14
C6
MRF5S4125NR1 MRF5S4125NBR1
4
RF Device Data
Freescale Semiconductor
32
23
22
21
Gps
ACPR
20
24
VDD = 28 Vdc, Pout = 25 W (Avg.)
IDQ = 1100 mA, Single--Carrier N--CDMA
--45
--50
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
19
18
28
ηD
--55
IRL
--60
ALT1
17
420
430
440
450
460
470
480
490
--65
500
0
--5
--10
--15
--20
48
44
23
ηD
22
21
40
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1100 mA, Single--Carrier N--CDMA
1.2288 MHz, Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
Gps
20
19
ACPR
--50
ALT1
430
--30
--40
IRL
17
420
--20
440
450
460
470
480
490
--60
500
0
--5
--10
--15
--20
IRL, INPUT RETURN LOSS (dB)
24
ACPR (dBc), ALT1 (dBc)
52
18
f, FREQUENCY (MHz)
Figure 4. Single--Carrier N--CDMA Broadband Performance @ Pout = 58 Watts Avg.
--10
IDQ = 1650 mA
1375 mA
1100 mA
23
825 mA
22
21
550 mA
20
VDD = 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
19
18
1
10
100
200 300
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
25
24
Gps, POWER GAIN (dB)
25
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single--Carrier N--CDMA Broadband Performance @ Pout = 25 Watts Avg.
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
VDD = 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
--20
IDQ = 550 mA
--30
562.5 mA
825 mA
--40
1375 mA
1100 mA
--50
1
10
100
200 300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
24
IRL, INPUT RETURN LOSS (dB)
36
ηD, DRAIN
EFFICIENCY (%)
25
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
5
--30
3rd Order
--40
5th Order
--50
7th Order
--60
--70
10
100
200 300
VDD = 28 Vdc, Pout = 120 W (PEP)
IDQ = 1100 mA, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 465 MHz
IM3--U
--30
IM3--L
IM5--L
IM5--U
--40
IM7--U
--50
IM7--L
--60
1
100
10
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
59
Ideal
58
P6dB = 52.98 dBm (198.6 W)
57
56
P3dB = 52.26 dBm (168.27 W)
55
54
P1dB = 51.16 dBm (130.62 W)
53
Actual
52
51
VDD = 28 Vdc, IDQ = 1100 mA
CW
f = 465 MHz
50
49
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
LIFETIME BUY
1
--10
50
--25
VDD = 28 Vdc, IDQ = 1100 mA, f = 465 MHz
Single--Carrier N--CDMA
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
45
40
35
30
85_C
25
20
25_C Gps
25_C --30_C
15
--30
--35
--40
ACPR --45
TC = --30_C
--50
--55
ηD
85_C
ALT1
10
5
85_C
0
1
25_C
--30_C
10
--60
--65
--70
--75
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single--Carrier N--CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
ACPR (dBc), ALT1 (dBc)
--20
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc
f1 = 465 MHz, f2 = 467.5 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
Pout, OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
--10
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
MRF5S4125NR1 MRF5S4125NBR1
6
RF Device Data
Freescale Semiconductor
24
70
23
25_C
85_C 60
22
85_C
50
21
40
20
30
19
18
VDD = 28 Vdc
IDQ = 1100 mA
f = 465 MHz
ηD
17
1
100
10
IDQ = 1100 mA
f = 465 MHz
80
20
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
25_C
TC = --30_C
--30_C
ηD, DRAIN EFFICIENCY (%)
Gps
25
23
22
21
10
VDD = 24 V
20
0
300
0
50
100
32 V
28 V
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
109
108
MTTF (HOURS)
LIFETIME BUY
24
90
26
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 25 W Avg., and ηD = 30.2%.
MTTF calculator available at http:/www.freescale.com/rf. Select
Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
250
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
7
100
--10
--30
1
--40
--50
0.1
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carrier. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
--60
--70
--80
--ACPR in 30 kHz
Integrated BW
--90
0.0001
0
LIFETIME BUY
1.2288 MHz
Channel BW
--20
2
4
6
8
PEAK--TO--AVERAGE (dB)
Figure 14. Single--Carrier CCDF N--CDMA
10
--ACPR in 30 kHz
Integrated BW
--100
--110
--3.6 --2.9 --2.2
--1.5
--0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 15. Single--Carrier N--CDMA Spectrum
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
N--CDMA TEST SIGNAL
MRF5S4125NR1 MRF5S4125NBR1
8
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
f = 545 MHz
Zload
f = 545 MHz
LIFETIME BUY
Zsource
f = 385 MHz
Zo = 25 Ω
f = 385 MHz
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 25 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
385
4.735 + j2.917
2.229 + j5.627
405
4.073 + j4.202
1.809 + j6.123
425
3.987 + j5.466
1.842 + j6.684
445
3.909 + j6.743
1.767 + j7.187
465
4.094 + j7.661
1.822 + j7.338
485
4.128 + j9.483
1.566 + j8.397
505
4.446 + j11.620
1.525 + j9.787
525
4.921 + j13.710
1.769 + j11.120
545
5.437 + j15.838
2.023 + j12.467
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
aaa
b1
C A
M
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
C
SEATING
PLANE
PIN 5
NOTE 8
4
1
3
2
D3
E5
BOTTOM VIEW
CASE 1486--03
ISSUE C
TO--270 WB--4
PLASTIC
MRF5S4125NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
3. DATUM PLANE --H-- IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D” AND “E1” DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D” AND “E1” DO
INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE --H--.
5. DIMENSION “b1” DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1” DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS --A-- AND --B-- TO BE DETERMINED AT
DATUM PLANE --H--.
7. DIMENSION A2 APPLIES WITHIN ZONE “J” ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
-----.551
.559
.353
.357
.132
.140
.124
.132
.270
-----.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
-----14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
-----8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF5S4125NR1 MRF5S4125NBR1
10
RF Device Data
Freescale Semiconductor
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
11
MRF5S4125NR1 MRF5S4125NBR1
12
RF Device Data
Freescale Semiconductor
MRF5S4125NR1 MRF5S4125NBR1
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
0
Jan. 2007
LIFETIME BUY
Revision
Description
• Initial Release of Data Sheet
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
MRF5S4125NR1 MRF5S4125NBR1
14
RF Device Data
Freescale Semiconductor
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MRF5S4125NR1 MRF5S4125NBR1
Document
Number:
RF
Device
Data MRF5S4125N
Rev. 0, 1/2007
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