Document Number: MRF6P18190H
Rev. 3, 12/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
LIFETIME BUY
Designed for W--CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA,
Pout = 44 Watts Avg., f = 1867.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.9 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
MRF6P18190HR6
1805--1880 MHz, 44 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 76°C, 44 W CW
RθJC
0.27
0.30
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF6P18190HR6
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 2000 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
—
0.21
—
Vdc
Crss
—
1.5
—
pF
Characteristic
Off Characteristics
(1)
LIFETIME BUY
On Characteristics
Dynamic Characteristics (2,3)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg., f1 = 1867.5 MHz, f2 =
1877.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
15.9
17.5
dB
Drain Efficiency
ηD
25.5
27.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--41
--38
dBc
IRL
—
--12
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in push--pull configuration.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF6P18190HR6
2
RF Device Data
Freescale Semiconductor
VBIAS
+
C7
+
R1
C6
C5
C4
C3
B2
Z12
Z16
R2
Z4
Z2
RF
INPUT
Z6
Z8
C15
Z18
Z10
Z20
Z22
C16
Z24
C17
Z26
C1
Z7
Z9
Z17
LIFETIME BUY
C11
C10
Z21
Z23
Z25
Z27
Z29
C22
Z19
C9
B4
C23
R4
Z1
Z2
Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
RF
Z31 OUTPUT
C30
+
C12
C21
Z15
B3
R3
C20
DUT
Z11
Z13
C13
C19
Z30
C8
+
+ VSUPPLY
C14
Z14
R5
Z5
Z3
+
Z28
C2
Z1
VBIAS
C18
+
0.700″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
2.112″ x 0.067″ Microstrip
0.174″ x 0.067″ Microstrip
0.382″ x 0.250″ Microstrip
0.036″ x 0.764″ Microstrip
0.178″ x 0.764″ Microstrip
0.689″ x 0.073″ Microstrip
0.111″ x 0.764″ Microstrip
0.124″ x 0.856″ Microstrip
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28
Z29
Z30
Z31
PCB
C24
C25
C26
+
+
+
C27
C28
C29
VSUPPLY
0.477″ x 0.136″ Microstrip
0.289″ x 0.856″ Microstrip
0.215″ x 0.385″ Microstrip
0.118″ x 0.259″ Microstrip
0.108″ x 0.067″ Microstrip
2.163″ x 0.067″ Microstrip
1.397″ x 0.114″ Microstrip
0.492″ x 0.067″ Microstrip
0.207″ x 0.067″ Microstrip
Taconic RF--35, 0.030″, εr = 3.5
Figure 1. MRF6P18190H Test Circuit Schematic
Table 5. MRF6P18190H Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2, B3, B4
Short RF Beads
2743019447
Fair--Rite
C1
0.6--4.5 pF Variable Capacitor
27271SL
Johanson Components
C2, C8, C14, C22
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C3, C9
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C4, C10, C18, C26
1K pF Chip Capacitors
ATC100B102JT50XT
ATC
C5, C11
1 μF, 50 V Tantalum Capacitors
T491C105K050AT
Kemet
C6, C12, C17, C25
0.1 μF Chip Capacitors
CDR33BX104AKTS
Kemet
C7, C13
100 μF, 50 V Electrolytic Capacitors, Radial
EEEFK1H101P
Panasonic
C15, C23
6.8 pF Chip Capacitors
ATC100B6R8GT500XT
ATC
C16, C24
0.56 μF Chip Capacitors
C1825C564J5RAC
Kemet
C19, C20, C27, C28
22 μF, 35 V Tantalum Capacitors
T491X226K035AT
Kemet
C21, C29
470 μF, 63 V Electrolytic Capacitors, Radial
477KXM063M
Illinois Capacitor
C30
0.4--2.5 pF Variable Capacitor
27283PC
Johanson Components
R1, R3
1 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R2, R4
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
R5
560 Ω, 1/4 W Chip Resistor
CRCW12065600FKEA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
B1
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
3
Rev. 2
-+
R1 C6
C7
C5
C4
C15
R2
B1
LIFETIME BUY
C20
B2
C14
C8
C30
CUT OUT AREA
R5
R4
C22
B3 B4
C27
C9
C28
C24
C13
R3 C12
--
C17 C18
C19
C2
C1
C16
+
C3
+
C21
--
C11
C25 C26
+
C23
C10
Figure 2. MRF6P18190H Test Circuit Component Layout
--
C29
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MRF6P18190
MRF6P18190HR6
4
RF Device Data
Freescale Semiconductor
ηD
27.8
27.6
27.4
ps
16
IM3
15.9
15.8
--38
ACPR
15.7
15.6
15.5
1760
--34
--36
IRL
1780
1800
1820
1840
--40
--42
1860
1880
1900
--44
1920
--8
--10
--12
--14
--16
--18
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 44 Watts
15.8
15.4
IRL
15.3
39.2
IM3
--24
--26
15.2
--28
15.1
ACPR --30
15
1760
1780
1800
1820
1840
1860
1880
1900
--32
1920
--8
--10
--12
--14
--16
--18
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 88 W (Avg.)
IDQ = 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
15.5
ηD, DRAIN
EFFICIENCY (%)
39.6
IM3 (dBc), ACPR (dBc)
40
ηD
15.6
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 88 Watts
17.5
16.5
16
15.5
--30
IDQ = 2600 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
17
Gps, POWER GAIN (dB)
40.4
Gps
15.7
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
2300 mA
2000 mA
1700 mA
15
14.5
14
13.5
0.1
VDD = 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, Two--Tone
Measurements, 10 MHz Tone Spacing
1400 mA
1
10
VDD = 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--35
IDQ = 2600 mA
--40
--45
2300 mA
1700 mA
--50
1400 mA
2000 mA
--55
100
1
10
100
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
28
16.3 VDD = 28 Vdc
Pout = 44 W (Avg.)
16.2 IDQ = 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
16.1 PAR = 8.5 dB @ 0.01%
Probability (CCDF)
G
IRL, INPUT RETURN LOSS (dB)
28.2
16.4
ηD, DRAIN
EFFICIENCY (%)
16.5
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
5
--30
3rd Order
--40
5th Order
--50
7th Order
--60
0.01
0.1
10
1
Ideal
57
56
P3dB = 54.13 dBm (258.82 W)
55
54
53
P1dB = 53.51 dBm (224.38 W)
Actual
52
51
50
VDD = 28 Vdc, IDQ = 2000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1842.5 MHz
49
48
32
100
33
35
34
36
37
38
39
40
41
42
43
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
40
30
--30
VDD = 28 Vdc, IDQ = 2000 mA
f1 = 1837.5 MHz, f2 = 1847.5 MHz
2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
20
Gps
10
TC = 25_C
IM3
--35
ACPR
--40
85_C
--45
--30_C
ηD
25_C
0
--50
--30_C
25_C
--10
85_C
1
44
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO--TONE SPACING (MHz)
--55
100 150
10
Pout, OUTPUT POWER (WATTS) AVG. W--CDMA
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
70
17
60
TC = --30_C
16
15
25_C 50
Gps
25_C
40
85_C
--30_C
14
30
85_C
13
12
VDD = 28 Vdc
IDQ = 2000 mA
f = 1842.5 MHz
ηD
11
1
10
100
20
10
0
500
17
16
15
Gps, POWER GAIN (dB)
18
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
60
59
58
VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 2000 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1842.5 MHz
Pout, OUTPUT POWER (dBm)
--20
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
--10
14
32 V
13
28 V
12
VDD = 24 V
11
10
9
IDQ = 2000 mA
f = 1842.5 MHz
8
7
0
35
70
105
140
175
210
245
280
315
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
TYPICAL CHARACTERISTICS
350
MRF6P18190HR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
107
106
105
90
110
130
150
170
190
210
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 44 W Avg., and ηD = 27.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W--CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
10
0
--10
1
(dB)
PROBABILITY (%)
LIFETIME BUY
TJ, JUNCTION TEMPERATURE (°C)
0.1
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
--50
4
6
--70
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--80
--25
--20
--60
0.0001
2
--30
--40
0.001
0
--20
8
10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--15
--10
--5
0
5
10
+IM3 in
3.84 MHz BW
15
20
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MTTF (HOURS)
108
25
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
7
f = 1880 MHz
Zo = 5 Ω
LIFETIME BUY
Zsource
Zload
f = 1800 MHz
f = 1800 MHz
VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1800
3.70 + j1.71
3.70 + j2.49
1840
3.40 + j2.75
3.55 + j3.29
1880
3.19 + j3.88
3.45 + j4.12
Zsource = Test circuit impedance as measured from
gate to gate.
Zload
= Test circuit impedance as measured
from drain to drain.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 15. Series Equivalent Source and Load Impedance
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
f = 1880 MHz
MRF6P18190HR6
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
A
D
aaa
M
T A
M
B
M
ccc
ccc
M
T A
M
B
M
M
T A
M
B
M
R
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D--05
ISSUE E
NI--1230
MRF6P18190HR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
2
Dec. 2008
LIFETIME BUY
Revision
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200° to 225°C in Maximum Ratings table and related
“Continuous use of maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Removed lower voltage test from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Updated Zsource and Zload definitions, Fig. 15, Series Equivalent Source and Load Impedance, p. 8
• Added Product Documentation and Revision History, p. 10
3
Dec. 2010
• Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
MRF6P18190HR6
10
RF Device Data
Freescale Semiconductor
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