Document Number: MRF6P21190HR6
Rev. 5,12/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF6P21190HR6
LIFETIME BUY
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA,
Pout = 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 26.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
2110--2170 MHz, 44 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 190 W CW
Case Temperature 72°C, 44 W CW
RθJC
Unit
°C/W
0.25
0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2004--2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF6P21190HR6
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage (3)
(VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Characteristic
Off Characteristics
(1)
LIFETIME BUY
On Characteristics
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14.5
15.5
17.5
dB
Drain Efficiency
ηD
25
26.5
—
%
Intermodulation Distortion
IM3
—
--37
--35
dBc
ACPR
—
--40
--38
dBc
IRL
—
--15
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Each side of device measured separately.
2. Part is internally matched both on input and output.
3. Measurements made with device in push--pull configuration.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF6P21190HR6
2
RF Device Data
Freescale Semiconductor
VBIAS
+
C14
+
R1
C6
C5
C4
C3
Z6
Z4
Z1
Z8
C15
C19
C16
C17
Z14
Z10
Z16
Z18
Z20
+ VSUPPLY
C20
C21
Z22
C13
Z12
C1
Z2
C18
+
C2
B2
R2
RF
INPUT
+
RF
Z24 OUTPUT
Z23
DUT
Z5
Z3
Z7
Z9
Z11
C7
Z13
Z15
Z17
Z19
Z21
C22
B3
VBIAS
+
LIFETIME BUY
C12
+
R3
C11
C10
C9
B4
C8
+
C23
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7, Z8
Z9, Z10
Z11, Z12
Z13, Z14
+
0.850″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
1.830″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
0.250″ x 0.067″ Microstrip
0.324″ x 0.178″ Microstrip
0.143″ x 0.655″ Microstrip
0.111″ x 0.655″ Microstrip
0.124″ x 0.712″ Microstrip
Z15, Z16
Z17, Z18
Z19, Z20
Z21
Z22
Z23
Z24
PCB
C24
C28
C25
C26
C27
+
+ VSUPPLY
C29
C30
0.289″ x 0.712″ Microstrip
0.127″ x 0.200″ Microstrip
0.288″ x 0.067″ Microstrip
0.088″ x 0.067″ Microstrip
1.830″ x 0.067″ Microstrip
1.140″ x 0.114″ Microstrip
0.850″ x 0.066″ Microstrip
Taconic RF--35, 0.030″, εr = 3.5
Figure 1. MRF6P21190HR6 Test Circuit Schematic
Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values
Part
Description
Part Number
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
+
B1
Manufacturer
B1, B2, B3, B4
RF Beads
2743019447
Fair--Rite
C1, C7
30 pF Chip Capacitors
ATC100B300JT500XT
ATC
C2, C8, C15, C24
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C3, C9, C18, C27
1k pF Chip Capacitors
ATC100B102JT50XT
ATC
C4, C10
1 μF, 50 V Tantalum Chip Capacitors
T491C105K050AT
Kemet
C5, C11, C17, C26
0.1 μF Chip Capacitors
CDR33BX104AKWT
Kemet
C6, C12
100 μF, 50 V Electrolytic Capacitors, Radial
EEEFK1H101P
Panasonic
C13, C22
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C14, C19, C20, C23,
C28, C29
22 μF, 35 V Tantalum Chip Capacitors
T491X226K035AT
Kemet
C16, C25
0.56 μF Chip Capacitors
C1825C564J5RAC
Kemet
C21, C30
470 μF, 63 V Electrolytic Capacitors, Radial
477KXM063M
Illinois Capacitor
R1, R3
1 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R2, R4
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKEA
Vishay
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
3
-+
C14
C15
R1
C6
MRF6P21190
Rev 2
C16
C17
C18
C5 C4
+
C2
R2
B1
C19
B2
C20
C13
CUT OUT AREA
C1
C7
LIFETIME BUY
C21
--
C22
C28
C29
R4 B3 B4
+
+
C12
R3
C11
C10
C9
C8
C23
C24
--
C25
C26
C27
--
C30
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. MRF6P21190HR6 Test Circuit Component Layout
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C3
MRF6P21190HR6
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
16
20
Gps
14
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
12
10
--10
IRL
10
8
IM3
6
4
2080
--20
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
--30
--40
ACPR
2100
2120
2140
2160
2180
--50
2220
2200
--10
--15
--20
--25
--30
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 44 Watts Avg.
20
ηD
40
16
Gps
30
14
VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA
2--Carrier W--CDMA, 10 MHz Carrier Spacing
12
10
0
IRL
8
IM3
--10
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
--20
6
--30
ACPR
4
2080
2100
2120
2140
2160
2180
2200
--40
2220
--10
--15
--20
--25
--30
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 87 Watts Avg.
17
--30
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2500 mA
16.5
Gps, POWER GAIN (dB)
20
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
50
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
2200 mA
16
1900 mA
15.5
1600 mA
15
1300 mA
14.5
14
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
10
1
100
300
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--35
2200 mA
IDQ = 2500 mA
1900 mA
--40
1600 mA
--45
--50
--55
1300 mA
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
30
IRL, INPUT RETURN LOSS (dB)
ηD
18
ηD, DRAIN
EFFICIENCY (%)
40
IM3 (dBc), ACPR (dBc)
20
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
--30
3rd Order
--35
5th Order
--40
--45
7th Order
--50
--55
0.1
30
25
20
55
P1dB = 53.7 dBm (233 W)
54
Actual
53
52
51
50
VDD = 28 Vdc, IDQ = 1900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
49
48
1
47
32
100
10
Ideal
33
34
35
36
37
38
39
40
41
42
43
TWO--TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
ηD
VDD = 28 Vdc, IDQ = 1900 mA
f1 = 2135 MHz, f2 = 2145 MHz
2--Carrier W--CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
--30
18
--35
15
50
12
40
9
30
6
20
ACPR
--40
Gps
15
--45
10
--50
5
--55
3
--60
100
0
0
1
10
60
Gps
VDD = 28 Vdc
IDQ = 1900 mA
f = 2140 MHz
ηD
10
3
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) CW
Figure 9. 2--Carrier W--CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
18
Gps, POWER GAIN (dB)
16
VDD = 28 V
14
12
24 V
10
20 V
IDQ = 1900 mA
f = 2140 MHz
8
6
3
10
44
100
Pout, OUTPUT POWER (WATTS) CW
500
10
0
300
ηD, DRAIN EFFICIENCY (%)
--25
P3dB = 54.45 dBm (279 W)
56
Pout, OUTPUT POWER (dBm)
--20
57
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
58
VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
--15
Figure 11. Power Gain versus Output Power
MRF6P21190HR6
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
107
106
105
90
110
130
150
170
190
210
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 44 W Avg., and ηD = 26.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W--CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
10
0
--10
1
(dB)
PROBABILITY (%)
LIFETIME BUY
TJ, JUNCTION TEMPERATURE (°C)
0.1
--20
--30
--40
0.01
--50
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
--ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
--IM3 in
3.84 MHz BW
--60
--70
0.0001
+IM3 in
3.84 MHz BW
--80
0
2
4
6
8
10
PEAK--TO--AVERAGE (dB)
Figure 13. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single--Carrier Test Signal
--25
--20
--15
--10
--5
0
5
10
15
20
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MTTF (HOURS)
108
25
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
7
f = 2200 MHz
f = 2200 MHz
LIFETIME BUY
Zload
Zsource
f = 2000 MHz
f = 2000 MHz
VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2000
5.63 -- j12.88
3.43 -- j10.06
2110
4.36 -- j10.02
3.22 -- j7.13
2140
4.56 -- j8.49
3.39 -- j6.07
2170
5.11 -- j7.41
3.76 -- j5.45
2200
5.42 -- j6.67
3.69 -- j5.16
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Zo = 25 Ω
Figure 15. Series Equivalent Source and Load Impedance
MRF6P21190HR6
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
2X
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
A
D
aaa
M
T A
M
B
M
ccc
ccc
T A
M
M
B
M
M
T A
M
B
M
R
(LID)
N
(LID)
F
H
C
E
PIN 5
M
(INSULATOR)
bbb
M
T A
M
B
S
T
SEATING
PLANE
(INSULATOR)
bbb
M
T A
M
M
B
M
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.082
0.090
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.08
2.29
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375D--05
ISSUE E
NI--1230
MRF6P21190HR6
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
4
Dec. 2008
LIFETIME BUY
Revision
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use of maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power and Fig. 6, Third Order
Intermodulation Distortion versus Output Power, to better match the device’s capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
5
Dec. 2010
• Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
MRF6P21190HR6
10
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1--800--521--6274 or +1--480--768--2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1--8--1, Shimo--Meguro, Meguro--ku,
Tokyo 153--0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1--800--441--2447 or +1--303--675--2140
Fax: +1--303--675--2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2004--2006, 2008, 2010. All rights reserved.
MRF6P21190HR6
Document
Number:
RF
Device
Data MRF6P21190HR6
Rev. 5,12/2010
Freescale
Semiconductor
11
工商网监
湘ICP备2023018690号
