Document Number: MRF6P3300H
Rev. 2, 10/2008
Freescale Semiconductor
Technical Data
MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration
PCN12895 for more details.
MRF6P3300HR3
MRF6P3300HR5
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with fre‐
quencies from 470 to 860 MHz. The high gain and broadband performance of
this device make it ideal for large- signal, common- source amplifier applica‐
tions in 32 volt analog or digital television transmitter equipment.
• Typical Narrowband Two-T one Performance @ 860 MHz: VDD = 32 Volts,
IDQ = 1600 mA, Pout = 270 Watts PEP
Power Gain — 20.2 dB
Drain Efficiency — 44.1%
IMD — -30.8 dBc
• Typical Narrowband DVB-T OFDM Performance @ 860 MHz: VDD =
32 Volts, IDQ = 1600 mA, Pout = 60 Watts Avg., 8K Mode, 64 QAM
Power Gain — 20.4 dB
Drain Efficiency — 29%
ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Designed for Push-Pull Operation Only
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
470-860 MHz, 300 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N-Channel Enhancement-Mode Lateral MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 300 W CW
Case Temperature 82°C, 220 W CW
Case Temperature 79°C, 100 W CW
Case Temperature 81°C, 60 W CW
°C/W
RθJC
0.23
0.24
0.27
0.27
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6P3300HR3 MRF6P3300HR5
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3B (Minimum)
Machine Model (per EIA/JESD22-A115)
C (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current (4)
(VDS = 32 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 350 μAdc)
VGS(th)
1
2.2
3
Vdc
Gate Quiescent Voltage
(VDD = 32 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.22
0.3
Vdc
Crss
—
1.4
—
pF
Characteristic
On Characteristics (1)
Dynamic Characteristics (1,2)
Reverse Transfer Capacitance
(VDS = 32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (3) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP,
f1 = 857 MHz, f2 = 863 MHz
Power Gain
Gps
19
20.2
23
dB
ηD
41
44.1
—
%
Intermodulation Distortion
IMD
—
-30.8
-28
dBc
Input Return Loss
IRL
—
-24
-9
dB
P1dB
—
320
—
W
Drain Efficiency
Pout @ 1 dB Compression Point, CW
(f = 860 MHz)
1.
2.
3.
4.
Each side of the device measured separately.
Part internally matched both on input and output.
Measurement made with device in push-pull configuration.
Drains are tied together internally as this is a total device value.
MRF6P3300HR3 MRF6P3300HR5
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Off Characteristics
(1)
R1
VBIAS
+
B1
C23
+
C1
C2
C3
Z19
Z8
Z4
Z2
COAX3
Z12
Z14
Z16
C14
Z6
RF
Z18 OUTPUT
C4
Z1
Z3
C6
Z7
DUT
C5
ARCHIVE INFORMATION
C17
C18
Z10
COAX1
RF
INPUT
C16
C15
C10 C11
Z9
R2
C12
Z13
Z15
Z17
ARCHIVE INFORMATION
R3
VSUPPLY
+
Z5
C13
B2
COAX2
VBIAS
Z11
Z20
COAX4
+
C9
C7
C24
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
0.401″ x 0.081″ Microstrip
0.563″ x 0.101″ Microstrip
1.186″ x 0.058″ Microstrip
0.416″ x 0.727″ Microstrip
0.191″ x 0.507″ Microstrip
1.306″ x 0.150″ Microstrip
Z12, Z13
Z14, Z15
Z16, Z17
Z18
Z19, Z20
PCB
VSUPPLY
+
+
C8
C20
C19
C21
C22
0.225″ x 0.507″ Microstrip
0.440″ x 0.435″ Microstrip
0.123″ x 0.215″ Microstrip
0.401″ x 0.081″ Microstrip
0.339″ x 0.165″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Figure 1. 820-900 MHz Narrowband Test Circuit Schematic
Table 5. 820-900 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair-Rite
C1, C9
1.0 μF, 50 V Tantulum Chip Capacitors
T491C105K050AT
Kemet
C2, C7, C17, C21
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C3, C8, C16, C20
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C4, C5, C13, C14
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C6, C12
8.2 pF Chip Capacitors
ATC100B8R2JT500XT
ATC
C10
9.1 pF Chip Capacitor
ATC100B9R1BT500XT
ATC
C11
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C15, C19
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C18, C22
470 μF, 63 V Electrolytic Capacitors
ESME630ELL471MK25S
United Chemi-Con
C23, C24
22 pF Chip Capacitors
ATC100B220FT500XT
ATC
Coax1, 2, 3, 4
50 Ω, Semi Rigid Coax, 2.06″ Long
UT-141A-TP
Micro-Coax
R1, R2
10 Ω, 1/4 W Chip Resistors
CRCW120610R0FKEA
Vishay
R3
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
3
C15
C1
C18
C23
VDD
B1
C2 C3
R3
R1
C16
COAX1
C4
C5
C14
C6
CUT OUT AREA
ARCHIVE INFORMATION
MRF6P9220, Rev. 2
COAX3
C10 C11
C12
C13
COAX2
COAX4
R2
VGG
C7
C17
C8
C20
B2
C21
VDD
C24
C22
C9
C19
Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout
MRF6P3300HR3 MRF6P3300HR5
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
VGG
TYPICAL NARROWBAND CHARACTERISTICS
27
Gps
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation
5 Symbols
19.5
19
25
-45
-5
18.5
-50
-10
18
-55
17.5
IRL
ACPR
-60
830
840
850
860
870
880
-15
-20
-25
-65
900
17
820
ACPR (dBc)
Gps, POWER GAIN (dB)
20
890
ARCHIVE INFORMATION
29
20.5
f, FREQUENCY (MHz)
Figure 3. Single-Carrier OFDM Broadband Performance @ 60 Watts Avg.
42
40
Gps
19.5
38
19
-45
-5
18.5
-47
-10
18
-49
IRL
ACPR
17.5
-51
-53
900
17
820
830
840
850
860
870
880
890
-15
-20
-25
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
44
VDD = 32 Vdc, Pout = 120 W (Avg.)
20.5 IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier
20 Modulation, 5 Symbols
ACPR (dBc)
Gps, POWER GAIN (dB)
21
f, FREQUENCY (MHz)
Figure 4. Single-Carrier OFDM Broadband Performance @ 120 Watts Avg.
21.5
-10
20.5
2000 mA
20
1600 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
2400 mA
21
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
31
IRL, INPUT RETURN LOSS (dB)
ηD
ηD, DRAIN
EFFICIENCY (%)
21
1200 mA
19.5
19
IDQ = 800 mA
18.5
VDD = 32 Vdc
f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
18
17.5
5
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
VDD = 32 Vdc, f1 = 857 MHz, f2 = 863 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-20
-30
IDQ = 2400 mA
800 mA
-40
2000 mA
-50
1600 mA
1200 mA
-60
600
5
10
100
600
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
5
TYPICAL NARROWBAND CHARACTERISTICS
-20
-20
-30
-40
3rd Order
-50
5th Order
-60
7th Order
-70
10
100
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 860 MHz
-25
-30
3rd Order
-35
5th Order
-40
-45
-50
7th Order
-55
0.01
600
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing @ 860 MHz
Pout, OUTPUT POWER (dBm)
64
63
62
40
P6dB = 56.28 dBm
(424.54 W)
P3dB = 55.87 dBm
(386.48 W)
61
60
59
58
57
Ideal
P1dB = 55.20 dBm
(330.94 W)
Actual
56
55
54
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 860 MHz
53
52
32
33
34
35
36
37
38
40
39
41
42
43
44
Pin, INPUT POWER (dBm)
45
-40
VDD = 32 Vdc, IDQ = 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
40
25_C
-44
TC = 85_C
25_C
35
-30 _C
ηD
30
ACPR
-48
-52
-56
25
20
Gps
-30 _C
25_C
85_C
15
20
30
40
50
60 70 80 90 100
-60
-64
200
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulsed CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single-Carrier DVB-T OFDM ACPR,
Power Gain and Drain Efficiency
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
6
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
VDD = 32 Vdc, IDQ = 1600 mA, f1 = 857 MHz
f2 = 863 MHz, Two-Tone Measurements
5
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10
TYPICAL NARROWBAND CHARACTERISTICS
21.5
70
-30 _C
Gps
25_C
85_C
21
25_C
20
40
85_C
19
30
18
20
17
VDD = 32 Vdc
IDQ = 1600 mA
f = 860 MHz
ηD
5
10
20.5
19
18.5
18
32 V
17
VDD = 24 V
28 V
16.5
0
800
100
20
19.5
17.5
10
16
0
50
100
150
200
250
300
350
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
400
107
MTTF (HOURS)
ARCHIVE INFORMATION
50
Gps, POWER GAIN (dB)
TC = -30 _C
IDQ = 1600 mA
f = 860 MHz
21
60
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
22
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 32 Vdc, Pout = 270 W PEP, and ηD = 44.1%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
7
ARCHIVE INFORMATION
23
DIGITAL TEST SIGNALS
100
-20
7.61 MHz
-30
10
-50
-60
0.1
(dB)
PROBABILITY (%)
-40
1
8K Mode DVB-T OFDM
64 QAM Data Carrier Modulation
5 Symbols
0.01
ACPR Measured at 3.9 MHz Offset
from Center Frequency
-70
-80
-90
0.001
20 kHz BW
2
0
4
6
8
10
12
-5
-4
-3
-2
-1
0
1
2
3
4
PEAK-T O-A VERAGE (dB)
f, FREQUENCY (MHz)
Figure 14. Single-Carrier DVB-T OFDM
Figure 15. 8K Mode DVB-T OFDM Spectrum
100
5
-10
Reference
Point
-20
10
1
-40
-50
0.1
(dB)
PROBABILITY (%)
-30
IMRL
IMRU
-60
-70
0.01
-80
ATSC 8VSB
0.001
3.25 MHz
Offset
-90
3.25 MHz
Offset
-100
0.0001
0
1
2
3
4
5
6
7
8
-4.0 -3.2
-2.4
-1.6
-0.8
0
0.8
1.6
2.4
PEAK-T O-A VERAGE (dB)
f, FREQUENCY (MHz)
Figure 16. Single-Carrier ATSC 8VSB
Figure 17. ATSC 8VSB Spectrum
3.2
4.0
MRF6P3300HR3 MRF6P3300HR5
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
-1 10
0.0001
ARCHIVE INFORMATION
20 kHz BW
-100
f = 890 MHz
Zload
f = 830 MHz
Zo = 10 Ω
f = 890 MHz
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 830 MHz
Zsource
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP
f
MHz
Zload
Ω
Zsource
Ω
830
4.52 - j6.73
4.89 - j1.35
845
4.22 - j6.38
5.06 - j1.01
860
3.89 - j5.81
5.18 - j0.58
875
3.54 - j5.10
5.27 - j0.11
890
3.39 - j4.32
5.36 + j0.43
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
-
Z
source
Output
Matching
Network
+
Z
load
Figure 18. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
9
Z6
R2
VBIAS
+
B1
C3
C5
C7
+
R1
C26
C28
COAX1
COAX3
Z2
Z8
Z10
Z12
C1
Z1
C10
C9
ARCHIVE INFORMATION
Z3
Z5
Z9
Z11
Z13
C2
R3
COAX2
VBIAS
COAX4
Z7
B2
+
+
C29
C4
C27
C6
C8
Z20
C18
C16
+
C14
C22
Z16
Z18
C24
COAX7
COAX5
Z14
VSUPPLY
+
Z22
Z24
C20
RF
Z26 OUTPUT
DUT
C11
Z15
C12
Z17
C13
Z19
Z23
Z25
C21
COAX6
C19
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
0.351″ x 0.081″ Microstrip
0.139″ x 0.214″ Microstrip
0.364″ x 0.214″ Microstrip
1.154″ x 0.051″ Microstrip
0.086″ x 0.100″ Microstrip
0.184″ x 0.802″ Microstrip
0.164″ x 0.802″ Microstrip
0.276″ x 0.420″ Microstrip
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26
PCB
COAX8
Z21
C17
VSUPPLY
+
+
C15
C23
C25
0.072″ x 0.420″ Microstrip
0.072″ x 0.031″ Microstrip
1.404″ x 0.141″ Microstrip
0.363″ x 0.214″ Microstrip
0.139″ x 0.214″ Microstrip
0.351″ x 0.081″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.5
Figure 19. 470-860 MHz Broadband Test Circuit Schematic
MRF6P3300HR3 MRF6P3300HR5
10
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
RF
INPUT
Z4
Table 6. 470-860 MHz Broadband Test Circuit Component Designations and Values
Part Number
Manufacturer
2743019447
Fair-Rite
C1, C2, C20, C21
43 pF Chip Capacitors
ATC700B430FT500XT
ATC
C3, C4, C14, C15
100 μF, 50 V Electrolytic Capacitors
515D107M050BB6AE3
Vishay
C5, C6, C16, C17
220 nF, 100 V Chip Capacitors
C1812C224K5RAC
Kemet
C7, C8, C18, C19
0.01 μF, 100 V Chip Capacitors
C1210C103J1RAC
Kemet
C9, C13
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C10
15 pF 600B Chip Capacitor
ATC600S150FT250XT
ATC
C11
16 pF 600B Chip Capacitor
ATC600B160FT250XT
ATC
C12
4.3 pF 600B Chip Capacitor
ATC600B4R3BT250XT
ATC
C22, C23
470 μF, 63 V Electrolytic Capacitors
EMVY630GTR471MLN0S
Nippon
C24, C25, C26, C27
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C28, C29
10 μF, 50 V Electrolytic Capacitors
ECE-V1HA100SP
Nippon Chemi-Con
Coax1, 2, 7, 8
50 Ω, Semi Rigid Coax, 3.00″ Long
UT-141C-50-SP
Micro-Coax
Coax3, 4, 5, 6
25 Ω, Semi Rigid Coax, 3.00″ Long
UT-141C-25
Micro-Coax
R1
1 kΩ, 1/8 W Resistor
CRCW12061001FKEA
Vishay
R2, R3
10 Ω, 1/8 W Resistors
CRCW120610R0FKEA
Vishay
C28
C22
R1
C26
VGG
COAX1 R2
COAX3
B1
Rev. 3
C24
C16
C18
C8
C6
C4
R3
VGG
B2
COAX4
C27
C29
CUT OUT AREA
C9
C20
C11
C10
C2
COAX7
C14
C5
C7
C1
VDD
COAX5
C3
COAX2
ARCHIVE INFORMATION
Description
Ferrite Beads, Short
MRF6P93300
ARCHIVE INFORMATION
Part
B1, B2
C12
C13
C21
C19
C17
C15
COAX8
COAX6
VDD
C25
C23
Figure 20. 470-860 MHz Broadband Test Circuit Component Layout
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
11
-24
ηD
44
-27
40
-30
36
-33
IMD
-36
32
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, 6 MHz Tone Spacing
28
24
-39
-42
Gps
-45
20
16
400
500
600
700
800
-48
900
IMD, INTERMODULATION DISTORTION (dBc)
48
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 21. Two-T one Broadband Performance @ Pout = 270 Watts PEP
MRF6P3300HR3 MRF6P3300HR5
12
RF Device Data
Freescale Semiconductor
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
24.5
23.5
Gps, POWER GAIN (dB)
23
1600 mA
22.5
1200 mA
22
21
5
10
100
22
1600 mA
21.5
21
1200 mA
VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
800 mA
20
400
5
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 22. Two-T one Power Gain versus
Output Power @ 473 MHz
Figure 23. Two-T one Power Gain versus
Output Power @ 560 MHz
21
400
19
IDQ = 2400 mA
IDQ = 2400 mA
18.5
Gps, POWER GAIN (dB)
20.5
Gps, POWER GAIN (dB)
2000 mA
20.5
VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
800 mA
22.5
2000 mA
20
1600 mA
19.5
1200 mA
19
2000 mA
18
1600 mA
17.5
1200 mA
VDD = 32 Vdc
f1 = 757 MHz, f2 = 763 MHz
Two-Tone Measurements
6 MHz Tone Spacing
17
800 mA
VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
18.5
800 mA
16.5
5
100
10
400
5
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 24. Two-T one Power Gain versus
Output Power @ 660 MHz
Figure 25. Two-T one Power Gain versus
Output Power @ 760 MHz
400
20
IDQ = 2400 mA
Gps, POWER GAIN (dB)
19.5
2000 mA
19
1600 mA
18.5
1200 mA
18
800 mA
17.5
5
10
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 26. Two-T one Power Gain versus
Output Power @ 857 MHz
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
13
ARCHIVE INFORMATION
Gps, POWER GAIN (dB)
23
2000 mA
23.5
21.5
ARCHIVE INFORMATION
IDQ = 2400 mA
IDQ = 2400 mA
24
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
-25
-30
1200 mA
-35
2400 mA
-40
2000 mA
-45
1600 mA
-50
VDD = 32 Vdc, f1 = 470 MHz, f2 = 476 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
IDQ = 800 mA
-35
1200 mA
-40
1600 mA
-45
10
-50
400
100
VDD = 32 Vdc, f1 = 557 MHz, f2 = 563 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
5
10
Pout, OUTPUT POWER (WATTS) PEP
-25
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 800 mA
-35
-40
1200 mA
-45
2400 mA
-50
2000 mA
400
Figure 28. Third Order Intermodulation
Distortion versus Output Power @ 560 MHz
VDD = 32 Vdc, f1 = 657 MHz, f2 = 663 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-30
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 27. Third Order Intermodulation
Distortion versus Output Power @ 473 MHz
-25
2400 mA
2000 mA
-55
5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
1600 mA
-55
-30
IDQ = 800 mA
-35
1200 mA
-40
2400 mA
-45
2000 mA
1600 mA
-50
VDD = 32 Vdc, f1 = 757 MHz, f2 = 763 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-55
5
10
400
100
5
10
Pout, OUTPUT POWER (WATTS) PEP
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 29. Third Order Intermodulation
Distortion versus Output Power @ 660 MHz
Figure 30. Third Order Intermodulation
Distortion versus Output Power @ 760 MHz
-25
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
-55
-30
-30
IDQ = 800 mA
-35
1200 mA
-40
2400 mA
2000 mA
-45
1600 mA
-50
VDD = 32 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two-Tone Measurements, 6 MHz Tone Spacing
-55
5
10
100
400
Pout, OUTPUT POWER (WATTS) PEP
Figure 31. Third Order Intermodulation
Distortion versus Output Power @ 857 MHz
MRF6P3300HR3 MRF6P3300HR5
14
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
IDQ = 800 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
-25
TYPICAL TWO-TONE BROADBAND CHARACTERISTICS
-10
-20
3rd Order
-30
5th Order
-40
7th Order
-50
-60
10
1
-10
-20
-30
3rd Order
-40
5th Order
7th Order
-50
-60
0.01
100
1
0.1
10
TWO-T ONE SPACING (MHz)
TWO-T ONE SPACING (MHz)
Figure 32. Intermodulation Distortion
Products versus Tone Spacing @ 470 MHz
Figure 33. Intermodulation Distortion
Products versus Tone Spacing @ 560 MHz
100
0
IMD, INTERMODULATION DISTORTION (dBc)
0
-10
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 560 MHz
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 660 MHz
-20
3rd Order
-30
5th Order
-40
7th Order
-50
-60
0.01
0.1
1
100
10
-10
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, f = 760 MHz
-20
-30
3rd Order
-40
5th Order
-50
7th Order
-60
0.01
0.1
1
10
TWO-T ONE SPACING (MHz)
TWO-T ONE SPACING (MHz)
Figure 34. Intermodulation Distortion
Products versus Tone Spacing @ 660 MHz
Figure 35. Intermodulation Distortion
Products versus Tone Spacing @ 760 MHz
100
IMD, INTERMODULATION DISTORTION (dBc)
0
-10
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements, 6 MHz Tone Spacing
f1 = 860 MHz - Tone Spacing, f2 = 860 MHz
-20
3rd Order
-30
5th Order
-40
7th Order
-50
-60
0.1
1
10
100
TWO-T ONE SPACING (MHz)
Figure 36. Intermodulation Distortion
Products versus Tone Spacing @ 860 MHz
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
15
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
0
VDD = 32 Vdc, Pout = 270 W (PEP), IDQ = 1600 mA
Two-Tone Measurements
f1 = 470 MHz, f2 = 470 MHz + Tone Spacing
0.1
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
IMD, INTERMODULATION DISTORTION (dBc)
0
28
-53
26
-54
ACPR
24
-55
22
-56
20
18
400
VDD = 32 Vdc, Pout = 60 W (Avg.)
IDQ = 1600 mA, 8K Mode OFDM
64 QAM Data Carrier Modulation, 5 Symbols
500
600
-57
Gps
700
-58
900
800
f, FREQUENCY (MHz)
24
45
f = 560 MHz
ηD, DRAIN EFFICIENCY (%)
22
660 MHz
21
760 MHz
20
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
860 MHz
19
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
40
23
35
f = 660 MHz
860 MHz
30
760 MHz
25
560 MHz
20
15
10
18
5
10
100
10
3
200
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 38. Single-Carrier DVB-T OFDM Power
Gain versus Output Power
Figure 39. Single-Carrier DVB-T OFDM Drain
Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
3
200
-45
VDD = 32 Vdc, IDQ = 1600 mA
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
-50
-55
f = 860 MHz
-60
760 MHz
560 MHz
660 MHz
-65
3
10
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 40. Single-Carrier DVB-T OFDM ACPR
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
16
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
-52
ηD
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
30
Figure 37. Single-Carrier OFDM Broadband
Performance @ 60 Watts Avg.
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
TYPICAL DVB-T OFDM BROADBAND CHARACTERISTICS
TYPICAL CW BROADBAND CHARACTERISTICS
26
70
f = 660 MHz
VDD = 32 Vdc, IDQ = 1600 mA
ηD, DRAIN EFFICIENCY (%)
f = 560 MHz
24
470 MHz
22
660 MHz
20
760 MHz
860 MHz
18
50
40
470 MHz
30
860 MHz
20
10
VDD = 32 Vdc, IDQ = 1600 mA
16
ARCHIVE INFORMATION
760 MHz
560 MHz
0
5
10
100
500
3
10
100
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 41. CW Power Gain versus
Output Power
Figure 42. CW Drain Efficiency versus
Output Power
500
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
17
ARCHIVE INFORMATION
Gps, POWER GAIN (dB)
60
TYPICAL CW BROADBAND CHARACTERISTICS
Ideal
55.5
55
P1dB = 53.59 dBm
(228.67 W)
54.5
54
53.5
Actual
53
52.5
52
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 470 MHz
28
28.5
29
29.5
30
30.5
31.5
31
32
32.5
33
Pin, INPUT POWER (dBm)
Figure 43. Pulsed CW Output Power versus
Input Power @ 470 MHz
59
60
Ideal
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
59
P3dB = 55.49 dBm
(353.76 W)
58
57
P1dB = 54.84 dBm
(304.81 W)
56
Actual
55
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 560 MHz
54
P3dB = 54.88 dBm
(307.45 W)
58
Ideal
57
P1dB = 54.04 dBm
(253.67 W)
56
55
Actual
54
53
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 660 MHz
52
53
51
29
31
30
33
32
34
35
36
30
31
32
33
34
35
36
37
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 44. Pulsed CW Output Power versus
Input Power @ 560 MHz
Figure 45. Pulsed CW Output Power versus
Input Power @ 660 MHz
60
38
60
P3dB = 55.25 dBm
(334.73 W)
58
59
Ideal
Pout, OUTPUT POWER (dBm)
59
Pout, OUTPUT POWER (dBm)
ARCHIVE INFORMATION
51.5
51
57
P1dB = 54.56 dBm
(286.06 W)
56
55
Actual
54
53
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 760 MHz
52
58
57
P1dB = 54.82 dBm
(303.25 W)
56
Actual
55
54
VDD = 32 Vdc, IDQ = 1600 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 860 MHz
53
51
Ideal
P3dB = 55.58 dBm
(361.21 W)
52
31
32
33
34
35
36
37
38
39
32
33
34
35
36
37
38
39
Pin, INPUT POWER (dBm)
Pin, INPUT POWER (dBm)
Figure 46. Pulsed CW Output Power versus
Input Power @ 760 MHz
Figure 47. Pulsed CW Output Power versus
Input Power @ 860 MHz
40
MRF6P3300HR3 MRF6P3300HR5
18
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Pout, OUTPUT POWER (dBm)
57
56.5
56
-24
37.5
ηD
35
-25
-26
32.5
30
-27
VDD = 32 Vdc, Pout = 100 W (Avg.)
IDQ = 1700 mA, ATSC 8VSB
27.5
-28
-29
25
22.5
-30
Gps
20
-31
17.5
-32
ACPR
15
400
500
600
700
-33
900
800
f, FREQUENCY (MHz)
24
50
f = 560 MHz
VDD = 32 Vdc, IDQ = 1700 mA
ATSC 8VSB
23
ηD, DRAIN EFFICIENCY (%)
470 MHz
22
21
660 MHz
20
760 MHz
19
860 MHz
18
VDD = 32 Vdc, IDQ = 1700 mA
17
10
760 MHz
860 MHz
470 MHz
30
560 MHz
20
10
0
100
200
10
3
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 49. Single-Carrier ATSC 8VSB Power
Gain versus Output Power
Figure 50. Single-Carrier ATSC 8VSB Drain
Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
3
40
f = 660 MHz
200
-15
VDD = 32 Vdc, IDQ = 1700 mA
ATSC 8VSB
-20
f = 860 MHz
560 MHz
-25
-30
470 MHz
-35
660 MHz
760 MHz
-40
3
10
100
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 51. Single-Carrier ATSC 8VSB ACPR
versus Output Power
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
19
ARCHIVE INFORMATION
-23
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
40
Figure 48. Single-Carrier ATSC 8VSB
Broadband Performance @ 100 Watts Avg.
Gps, POWER GAIN (dB)
ARCHIVE INFORMATION
TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS
50
280
ηD
45
40
275
35
30
Peak Sync
Gps
25
265
260
PEAK SYNC (W)
270
VDD = 32 Vdc, IDQ = 1500 mA
Sync Compression
Input = 33%, Output = 27%
255
250
20
15
400
500
600
700
800
245
900
ARCHIVE INFORMATION
ARCHIVE INFORMATION
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL PAL B/G BROADBAND CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 52. Peak Sync, Power Gain and Drain
Efficiency versus Frequency
MRF6P3300HR3 MRF6P3300HR5
20
RF Device Data
Freescale Semiconductor
Zload
f = 860 MHz
f = 470 MHz
f = 470 MHz
Zsource
Zo = 25 Ω
Zo = 25 Ω
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 860 MHz
VDD = 32 Vdc, IDQ = 1600 mA, Pout = 270 W PEP
f
MHz
Zload
Ω
Zsource
Ω
470
8.77 - j5.43
6.09 - j4.37
510
8.74 - j4.17
6.39 - j1.65
560
8.86 - j2.87
6.69 - j2.45
610
10.55 - j2.45
7.36 - j1.95
660
12.41 - j3.53
7.73 - j1.75
710
13.11 - j6.04
7.95 - j1.20
760
11.29 - j10.15
8.18 - j1.36
810
6.81 - j10.41
7.81 - j1.60
860
3.73 - j9.66
6.94 - j2.49
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
-
Z
source
Output
Matching
Network
+
Z
load
Figure 53. 470-860 MHz Broadband Series Equivalent Source and Load Impedance
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
21
PACKAGE DIMENSIONS
4
G
ccc
R
M
T A
M
B
M
Q
bbb
2X
L
T A
M
M
M
(LID)
2
B
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
3. DIMENSION H TO BE MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION
OF 1.140 (28.96) BASED ON 3M SCREW.
(FLANGE)
5
4X
S
M
T A
3
4
B
(INSULATOR)
bbb
K
4X
M
B
M
D
bbb
M
ccc
T A
M
M
B
T A
M
M
B
M
F
N
(LID)
E
M
H
C
(INSULATOR)
bbb
A
M
T A
M
B
T
M
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.2125 BSC
0.135
0.165
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
STYLE 1:
PIN 1.
2.
3.
4.
5.
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
5.397 BSC
3.43
4.19
10.8 BSC
21.64
22.05
21.62
22.07
3.00
3.30
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375G-04
ISSUE G
NI-860C3
MRF6P3300HR3 MRF6P3300HR5
22
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
1
ARCHIVE INFORMATION
B
J
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
Revision
Date
2
Oct. 2008
Description
• Listed replacement part and Device Migration notification reference number, p. 1
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The following table summarizes revisions to this document.
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Corrected Z list in Figs. 1, 19, Test Circuit Schematic, p. 3, 10
• Updated PCB information to show more specific material details, Figs. 1, 19, Test Circuit Schematic, p. 3,
10
• Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 11
• Removed lower voltage tests from Fig. 12, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
• Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Adjusted scale for Figs. 22-26, Two-T one Power Gain versus Output Power, and Figs. 27-31, Third
Order Intermodulation Distortion versus Output Power, to show wider dynamic range, p. 13, 14
• Added Product Documentation and Revision History, p. 23
MRF6P3300HR3 MRF6P3300HR5
RF Device Data
Freescale Semiconductor
23
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
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Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved.
MRF6P3300HR3 MRF6P3300HR5
Document Number: MRF6P3300H
Rev. 2, 10/2008
24
RF Device Data
Freescale Semiconductor
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