MRF6S18100NR1

Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. LIFETIME BUY GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 100 Watts, f = 1990 MHz Power Gain — 14.5 dB Drain Efficiency — 49% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 40 Watts Avg., Full Frequency Band (1805--1880 MHz or 1930--1990 MHz) Power Gain — 15 dB Drain Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = --63 dBc Spectral Regrowth @ 600 kHz Offset = --76 dBc EVM — 2% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1805--1990 MHz, 100 W, 28 V GSM/GSM EDGE LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 MRF6S18100NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 MRF6S18100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 CW Case Temperature 77°C, 40 CW RθJC 0.51 0.62 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2005--2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRF6S18100NR1 MRF6S18100NBR1 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) VGS(th) 1.6 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.8 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) — 0.24 — Vdc Crss — 1.5 — pF Characteristic LIFETIME BUY Off Characteristics On Characteristics Dynamic Characteristics(1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 100 W, IDQ = 900 mA, f = 1990 MHz Power Gain Gps 13 14.5 16 dB Drain Efficiency ηD 47 49 — % IRL — --12 --9 dB P1dB 100 110 — W Input Return Loss Pout @ 1 dB Compression Point Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 700 mA, Pout = 40 W Avg., 1805--1880 MHz or 1930--1990 MHz EDGE Modulation Power Gain Gps — 15 — dB Drain Efficiency ηD — 35 — % Error Vector Magnitude EVM — 2 — % rms Spectral Regrowth at 400 kHz Offset SR1 — --63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — --76 — dBc Typical CW Performances (In Freescale GSM Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W, 1805--1880 MHz Power Gain Gps — 14.5 — dB Drain Efficiency ηD — 49 — % Input Return Loss IRL — --12 — dB P1dB — 110 — W Pout @ 1 dB Compression Point 1. Part internally matched both on input and output. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRF6S18100NR1 MRF6S18100NBR1 2 RF Device Data Freescale Semiconductor R2 C1 C2 C3 Z6 C4 + C5 VSUPPLY C14 Z13 RF INPUT R3 Z1 Z2 C6 Z3 C7 Z4 Z5 Z8 Z9 Z7 Z10 Z11 DUT C8 C9 Z12 RF OUTPUT C10 Z14 VSUPPLY LIFETIME BUY C11 Z1, Z12 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.450″ x 0.083″ Microstrip 0.535″ x 0.083″ Microstrip 0.540″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 1.190″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z13, Z14 PCB C12 C13 0.485″ x 1.000″ Microstrip 0.590″ x 0.083″ Microstrip 0.805″ x 0.083″ Microstrip 0.870″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 *Variable for tuning. Figure 1. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1930--1990 MHz Table 6. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1930--1990 MHz Part Description Part Number Manufacturer C1 100 nF Chip Capacitor 12065C104KAT AVX C2, C3, C6, C10, C11 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4, C5, C12, C13 4.7 μF Chip Capacitors C4532X5R1H475MT TDK C7 0.3 pF Chip Capacitor ATC700B0R3BT500XT ATC C8 1.3 pF Chip Capacitor ATC100B1R3BT500XT ATC C9 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C14 470 μF, 63 V Electrolytic Capacitor, Radial EKME630ELL471MK25S Multicomp R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R1 VBIAS MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 3 R1 C3 R2 C1 C2 C4 C5 R3 C7 C8 CUT OUT AREA LIFETIME BUY C6 C10 C9 C11 C12 C13 MRF6S18100N Rev. 0 Figure 2. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1930--1990 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C14 MRF6S18100NR1 MRF6S18100NBR1 4 RF Device Data Freescale Semiconductor 60 0 50 --10 IRL 40 15 Gps 14 30 VDD = 28 Vdc IDQ = 900 mA 13 1900 1920 1940 1960 1980 2000 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) ηD 16 20 2020 --20 --30 --40 f, FREQUENCY (MHz) 0 16 50 --10 IRL 15 14 40 Gps ηD 30 13 1900 1920 1940 1960 1980 2000 20 2020 --20 --30 IRL, INPUT RETURN LOSS (dB) 60 VDD = 28 Vdc IDQ = 900 mA --40 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts 16 16 IDQ = 1350 mA 14 15 1125 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 17 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) LIFETIME BUY Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts 900 mA 14 665 mA 13 450 mA 12 11 10 32 V 10 28 V 8 VDD = 24 V 6 IDQ = 900 mA f = 1960 MHz 4 VDD = 28 Vdc f = 1960 MHz 1 12 2 100 0 20 40 60 80 100 120 140 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 17 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS — 1930--1990 MHz 160 MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 5 ηD Gps 85_C 40 --30_C 25_C 14 30 85_C 12 20 10 10 8 0 12 10 100 3 44 W Avg. 2 20 W Avg. 1 0 1920 1940 1960 1980 2000 Figure 8. EVM versus Frequency 60 TC = --30_C 50 40 8 6 25_C ηD 4 30 85_C EVM 2 1 20 10 0 100 0 10 --50 SR @ 400 kHz --55 Pout = 61 W Avg. --60 44 W Avg. --65 20 W Avg. --70 SR @ 600 kHz --75 VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation 61 W Avg. --80 --85 1900 44 W Avg. 1920 Pout, OUTPUT POWER (WATTS) AVG. 1940 20 W Avg. 1960 1980 2020 2000 f, FREQUENCY (MHz) Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency Figure 9. EVM and Drain Efficiency versus Output Power --55 SPECTRAL REGROWTH @ 600 kHz (dBc) VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation --45 85_C --50 25_C --55 --60 TC = --30_C --65 --70 --75 Pout = 61 W Avg. Figure 7. Power Gain and Drain Efficiency versus CW Output Power --40 SPECTRAL REGROWTH @ 400 kHz (dBc) 4 f, FREQUENCY (MHz) VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz EDGE Modulation 10 VDD = 28 Vdc IDQ = 700 mA Pout, OUTPUT POWER (WATTS) CW SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) EVM, ERROR VECTOR MAGNITUDE (% rms) LIFETIME BUY 1 EVM, ERROR VECTOR MAGNITUDE (% rms) 16 25_C 50 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 5 TC = --30_C ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc IDQ = 900 mA f = 1960 MHz 0 20 40 60 80 100 TC = --30_C VDD = 28 Vdc, IDQ = 700 mA f = 1960 MHz, EDGE Modulation --60 85_C --65 25_C --70 --75 --80 --85 0 20 40 60 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 TYPICAL CHARACTERISTICS — 1930--1990 MHz 80 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 11. Spectral Regrowth at 400 kHz versus Output Power Figure 12. Spectral Regrowth at 600 kHz versus Output Power 100 MRF6S18100NR1 MRF6S18100NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 100 W, and ηD = 49%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature GSM TEST SIGNAL --10 --20 Reference Power VBW = 30 kHz Sweep Time = 70 ms RBW = 30 kHz --30 --40 --50 (dB) LIFETIME BUY TJ, JUNCTION TEMPERATURE (°C) --60 --70 --80 --90 400 kHz 400 kHz 600 kHz 600 kHz --100 --110 Center 1.96 GHz 200 kHz Figure 14. EDGE Spectrum Span 2 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 108 MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 7 f = 2020 MHz Zsource LIFETIME BUY f = 2020 MHz Zload f = 1900 MHz f = 1900 MHz VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz Zsource Ω Zload Ω 1900 2.80 -- j4.53 1.75 -- j3.52 1930 2.71 -- j4.27 1.67 -- j3.25 1960 2.63 -- j4.03 1.59 -- j2.99 1990 2.56 -- j3.79 1.52 -- j2.74 2020 2.51 -- j3.57 1.47 -- j2.51 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance — 1930--1990 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 5 Ω MRF6S18100NR1 MRF6S18100NBR1 8 RF Device Data Freescale Semiconductor R2 C1 C2 C3 Z6 C4 + C5 VSUPPLY C17 Z14 RF INPUT R3 Z1 Z2 Z3 C6 C7 C8 Z4 Z5 Z8 Z9 Z7 Z10 DUT C9 C10 Z11 Z12 C11 C12 Z13 RF OUTPUT C13 Z15 VSUPPLY LIFETIME BUY C14 Z1, Z13 Z2* Z3* Z4* Z5 Z6 Z7, Z8 0.250″ x 0.083″ Microstrip 0.620″ x 0.083″ Microstrip 0.715″ x 0.083″ Microstrip 0.190″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 1.190″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12* Z14, Z15 PCB C15 C16 0.485″ x 1.000″ Microstrip 0.080″ x 0.083″ Microstrip 0.340″ x 0.083″ Microstrip 0.975″ x 0.083″ Microstrip 0.960″ x 0.080″ Microstrip Taconic TLX8--0300, 0.030″, εr = 2.55 *Variable for tuning. Figure 16. MRF6S18100NR1(NBR1) Test Circuit Schematic — 1805--1880 MHz Table 7. MRF6S18100NR1(NBR1) Test Circuit Component Designations and Values — 1805--1880 MHz Part Description Part Number Manufacturer C1 100 nF Chip Capacitor 12065C104KAT AVX C2, C3, C6, C13, C14 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C4, C5, C15, C16 4.7 μF Chip Capacitors C4532X5R1H475MT TDK C7, C8, C11, C12 0.2 pF Chip Capacitors ATC700B0R2BT500XT ATC C9 1 pF Chip Capacitor ATC100B1R0BT500XT ATC C10 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C17 470 μF, 63 V Electrolytic Capacitor, Radial EKME630ELL471MK25S Multicomp R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R1 VBIAS MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 9 R1 R2 C3 C1 C2 C4 C5 R3 C10 C7 C8 C9 CUT OUT AREA LIFETIME BUY C6 C13 C11 C14 C12 C15 C16 MRF6S18100N Rev. 0 Figure 17. MRF6S18100NR1(NBR1) Test Circuit Component Layout — 1805--1880 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C17 MRF6S18100NR1 MRF6S18100NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1805--1880 MHz 40 Gps 14 30 IRL 13 VDD = 28 Vdc IDQ = 900 mA 12 1800 1810 1820 1830 1840 1850 1860 1870 20 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 15 0 50 10 1880 --10 --20 --30 --40 f, FREQUENCY (MHz) 40 15 ηD 14 30 VDD = 28 Vdc IDQ = 900 mA 1810 1820 1830 1840 1850 1860 20 1870 1880 --20 --30 --40 f, FREQUENCY (MHz) Figure 19. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 40 Watts 5 10 VDD = 28 Vdc IDQ = 700 mA Pout = 60 W Avg. 4 3 42 W Avg. 2 1 1800 25 W Avg. 1820 1840 1860 1880 f, FREQUENCY (MHz) Figure 20. EVM versus Frequency 1900 EVM, ERROR VECTOR MAGNITUDE (% rms) 6 EVM, ERROR VECTOR MAGNITUDE (% rms) Gps 13 1800 --10 50 IRL IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 16 ηD, DRAIN EFFICIENCY (%) LIFETIME BUY Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 100 Watts 50 VDD = 28 Vdc IDQ = 700 mA f = 1840 MHz EDGE Modulation 8 40 6 30 ηD 4 TC = 25_C 2 EVM 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 20 10 0 100 ηD, DRAIN EFFICIENCY (%) ηD 16 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 60 IRL, INPUT RETURN LOSS (dB) 17 Figure 21. EVM and Drain Efficiency versus Output Power MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 11 --50 Pout = 60 W Avg. SR @ 400 kHz --55 42 W Avg. --60 VDD = 28 Vdc IDQ = 700 mA f = 1960 MHz --65 25 W Avg. --70 --75 60 W Avg. SR @ 600 kHz --80 42 W Avg. 25 W Avg. --85 1780 1800 1820 1840 1860 1880 1900 1920 f, FREQUENCY (MHz) Figure 22. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency --45 --60 VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation --50 --55 TC = 25_C --60 --65 --70 --75 0 20 40 60 80 VDD = 28 Vdc, IDQ = 700 mA f = 1840 MHz, EDGE Modulation --65 --70 TC = 25_C --75 --80 --85 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 23. Spectral Regrowth at 400 kHz versus Output Power Figure 24. Spectral Regrowth at 600 kHz versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 --45 SPECTRAL REGROWTH @ 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz (dBc) LIFETIME BUY SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) TYPICAL CHARACTERISTICS — 1805--1880 MHZ MRF6S18100NR1 MRF6S18100NBR1 12 RF Device Data Freescale Semiconductor f = 1900 MHz Zload LIFETIME BUY f = 1780 MHz f = 1900 MHz f = 1780 MHz Zsource VDD = 28 Vdc, IDQ = 900 mA, Pout = 100 W f MHz Zsource Ω Zload Ω 1780 1.96 -- j4.09 1.94 -- j2.90 1804 1.90 -- j3.86 1.88 -- j2.67 1840 1.82 -- j3.53 1.80 -- j2.42 1880 1.76 -- j3.16 1.73 -- j1.99 1900 1.72 -- j2.97 1.70 -- j1.82 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 25. Series Equivalent Source and Load Impedance — 1805--1880 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 5 Ω MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MRF6S18100NR1 MRF6S18100NBR1 14 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 15 MRF6S18100NR1 MRF6S18100NBR1 16 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 17 MRF6S18100NR1 MRF6S18100NBR1 18 RF Device Data Freescale Semiconductor MRF6S18100NR1 MRF6S18100NBR1 RF Device Data Freescale Semiconductor 19 PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 2 Dec. 2008 LIFETIME BUY Revision Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 6, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 5 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 14--16. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 17--19. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 20 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages MRF6S18100NR1 MRF6S18100NBR1 20 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005--2006, 2008. All rights reserved. MRF6S18100NR1 MRF6S18100NBR1 Document Number: RF Device Data MRF6S18100N Rev. 2, 12/2008 Freescale Semiconductor 21