MRF6S18140HR5

Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica‐ tions. To be used in Class AB for PCN- PCS/cellular radio and WLL applica‐ tions. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 29 Watts Avg., f = 1877.5 MHz, IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 16 dB Drain Efficiency — 27.5% IM3 @ 2.5 MHz Offset — -36 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — -50.5 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW Output Power Features • Characterized with Series Equivalent Large-Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1805-1880 MHz, 29 W AVG., 28 V 2 x N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION ARCHIVE INFORMATION N-Channel Enhancement-Mode Lateral MOSFETs CASE 465B-03, STYLE 1 NI-880 MRF6S18140HR3 CASE 465C-02, STYLE 1 NI-880S MRF6S18140HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage VDSS -0.5, +68 Vdc Gate-Source Voltage VGS -0.5, +12 Vdc Storage Temperature Range Tstg -65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 140 W CW Case Temperature 73°C, 29 W CW °C/W RθJC 0.31 0.35 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF6S18140HR3 MRF6S18140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) 2 (Minimum) Machine Model (per EIA/JESD22-A115) A (Minimum) Charge Device Model (per JESD22-C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.8 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.22 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 685 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg., f1 = 1877.5 MHz, f2 = 1880 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 15 16 18 dB Drain Efficiency ηD 25.5 27.5 — % Intermodulation Distortion IM3 — -36 -34.5 dBc ACPR — -50.5 -48 dBc IRL — -10.5 — dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S18140HR3 MRF6S18140HSR3 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics VSUPPLY + B1 R3 C10 VBIAS + R5 C8 C4 C6 C13 Z16 Z18 RF INPUT C12 C16 R1 RF OUTPUT Z23 Z19 Z20 Z21 Z22 Z14 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 C2 Z13 Z17 C1 DUT Z15 B2 R4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 C14 C15 R6 C5 0.166″ x 0.082″ Microstrip 0.250″ x 0.334″ Microstrip 0.140″ x 0.340″ Microstrip 0.092″ x 0.164″ Microstrip 0.130″ x 0.234″ Microstrip 0.109″ x 0.082″ Microstrip 0.070″ x 0.082″ Microstrip 0.350″ x 0.644″ Microstrip 0.092″ x 0.420″ Microstrip 0.720″ x 0.082″ Microstrip 0.090″ x 0.485″ x 0.580″ Taper 0.342″ x 1.070″ Microstrip C7 ARCHIVE INFORMATION ARCHIVE INFORMATION + C9 C11 R2 C3 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 0.108″ x 1.070″ Microstrip 0.960″ x 0.046″ Microstrip 0.084″ x 0.046″ Microstrip 0.996″ x 0.080″ Microstrip 1.015″ x 0.080″ Microstrip 0.099″ x 1.070″ Microstrip 0.516″ x 1.070″ Microstrip 0.292″ x 0.288″ Microstrip 0.198″ x 0.114″ Microstrip 0.372″ x 0.080″ Microstrip 1.181″ x 0.080″ Microstrip DS Electronics GX0300, 0.030″, εr = 2.55 Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 47 Ω, 100 MHz Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite C1, C2 39 pF Chip Capacitors ATC700B390FT500XT ATC C3 0.1 pF Chip Capacitor ATC100B0R1BT500XT ATC C4, C5, C12, C13, C14, C15 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C6, C7, C10, C11 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC C8, C9 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Nippon Chemi-Con C16 470 μF, 63 V Electrolytic Capacitor EMVY630GTR471MMH0S Nippon Chemi-Con R1, R2 12 Ω, 1/4 W Resistors CRCW120612R0FKEA Vishay R3, R4 1.0 KΩ, 1/4 W Resistors CRCW12061001FKEA Vishay R5, R6 560 KΩ, 1/4 W Chip Resistors CRCW12065602FKEA Vishay MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 3 C10 B1 R1 R3 C12 C13 C6 C8 + C16 R5 C4 C1 C5 + C9 C3 ARCHIVE INFORMATION R6 CUT OUT AREA ARCHIVE INFORMATION C2 C14 C15 R4 B2 R2 C7 C11 MRF6S18140H/HS Rev. 1 Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout MRF6S18140HR3 MRF6S18140HSR3 4 RF Device Data Freescale Semiconductor ηD 29 28 Gps, POWER GAIN (dB) 16.4 16.2 Gps 16 15.8 15.6 27 VDD = 28 Vdc, Pout = 29 W (Avg.) IDQ = 1200 mA, 2-Carrier N-CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 26 -24 -30 -36 15.4 IM3 15.2 -42 IRL -48 ACPR 1780 1800 1820 1840 1860 1880 1900 -54 1920 0 -4 -8 -12 -16 -20 f, FREQUENCY (MHz) 42 ηD 41 40 Gps, POWER GAIN (dB) 16 39 15.8 15.6 VDD = 28 Vdc, Pout = 60 W (Avg.) IDQ = 1200 mA, 2-Carrier N-CDMA 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps 15.4 15.2 38 -12 -18 -24 15 14.6 14.4 1760 -30 IM3 14.8 IRL -36 ACPR 1780 1800 1820 1840 1860 1880 1900 -42 1920 IM3 (dBc), ACPR (dBc) 16.2 0 -4 -8 -12 -16 -20 IRL, INPUT RETURN LOSS (dB) 16.4 ηD, DRAIN EFFICIENCY (%) Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout = 29 Watts Avg. f, FREQUENCY (MHz) Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout = 60 Watts Avg. 19 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) -1 0 IDQ = 1800 mA 18 Gps, POWER GAIN (dB) ARCHIVE INFORMATION 15 14.8 1760 IM3 (dBc), ACPR (dBc) 16.6 ARCHIVE INFORMATION 30 IRL, INPUT RETURN LOSS (dB) 16.8 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 1500 mA 17 1200 mA 16 900 mA 15 14 600 mA VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 13 VDD = 28 Vdc f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing -2 0 -3 0 IDQ = 600 mA 1800 mA -4 0 -5 0 1500 mA 900 mA 1200 mA -60 1 10 100 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two-T one Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS -30 3rd Order -40 -50 5th Order 7th Order -60 -70 10 100 0 VDD = 28 Vdc, Pout = 140 W (PEP), IDQ = 1200 mA Two-Tone Measurements, (f1 + f2)/2 = Center Frequency of 1840 MHz -1 0 -2 0 IM3-U -3 0 IM3-L IM5-U -4 0 IM5-L IM7-L -5 0 IM7-U -6 0 400 1 100 10 Pout, OUTPUT POWER (WATTS) PEP TWO-T ONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 60 Ideal 59 P6dB = 53.90 dBm (245.47 W) Pout, OUTPUT POWER (dBm) 58 57 P3dB = 53.36 dBm (216.77 W) 56 55 P1dB = 52.6 dBm (182.64 W) 54 Actual 53 52 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 1840 MHz 51 50 49 32 33 34 35 36 37 38 39 40 41 42 44 43 Pin, INPUT POWER (dBm) 50 VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB IM3 @ 0.01% Probability (CCDF) 45 40 35 30 25_C -30 _C -20 -25 -30 85_C -35 -40 -45 25 20 -50 Gps 15 TC = -30_C 10 ηD -55 85_C ACPR 25_C IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power -60 -65 5 0 1 10 -70 100 Pout, OUTPUT POWER (WATTS) CW Figure 10. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF6S18140HR3 MRF6S18140HSR3 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION VDD = 28 Vdc, IDQ = 1200 mA f1 = 1838.75 MHz, f2 = 1841.25 MHz Two-Tone Measurements -20 1 ARCHIVE INFORMATION IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 17 25_C 16 44 85_C 15 33 14 22 VDD = 28 Vdc IDQ = 1200 mA f = 1840 MHz ηD 13 11 15 14 28 V 32 V 13 0 400 100 0 100 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 260 108 MTTF (HOURS) ARCHIVE INFORMATION 10 16 VDD = 24 V 12 1 IDQ = 1200 mA f = 1840 MHz 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF Factor versus Junction Temperature MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 7 ARCHIVE INFORMATION Gps 17 66 25_C 85_C 55 Gps, POWER GAIN (dB) -30 _C TC = -30_C ηD, DRAIN EFFICIENCY (%) 18 N-CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW -1 0 -2 0 1 +IM3 in 1.2288 MHz Integrated BW -4 0 0.1 IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 -5 0 -6 0 -7 0 -ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW 0 2 4 6 8 10 -9 0 PEAK-T O-A VERAGE (dB) Figure 14. 2-Carrier CCDF N-CDMA -100 -7.5 -6 -4.5 -3 -1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 15. 2-Carrier N-CDMA Spectrum MRF6S18140HR3 MRF6S18140HSR3 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION -8 0 0.0001 ARCHIVE INFORMATION -IM3 in 1.2288 MHz Integrated BW -3 0 (dB) PROBABILITY (%) 10 f = 1920 MHz ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 10 Ω Zload f = 1760 MHz f = 1920 MHz Zsource f = 1760 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 29 W Avg. f MHz Zsource W Zload W 1760 1.454 - j6.703 1.344 - j2.479 1780 1.465 - j6.511 1.338 - j2.299 1800 1.467 - j6.336 1.333 - j2.129 1820 1.448 - j6.193 1.325 - j1.966 1840 1.440 - j6.049 1.308 - j1.801 1860 1.414 - j5.938 1.301 - j1.687 1880 1.377 - j5.827 1.303 - j1.550 1900 1.311 - j5.710 1.301 - j1.419 1920 1.231 - j5.583 1.289 - j1.303 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS G 2X 1 Q bbb M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED M B (FLANGE) 3 K 2 bbb M D T A B M M M bbb M T A M B M ccc M T A M B M ARCHIVE INFORMATION N R (INSULATOR) ccc M T A M B S (LID) aaa M T A M (LID) M (INSULATOR) B M H C E T (FLANGE) SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 B (FLANGE) 2 bbb M D T A MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF CASE 465B-03 ISSUE D NI-880 MRF6S18140HR3 A K INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F A DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M T A M B ccc M T A M B B M M (INSULATOR) M N R ccc M T A M aaa M T A M S (LID) M B B (LID) M (INSULATOR) M H DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE C F E T A SEATING PLANE A (FLANGE) CASE 465C-02 ISSUE D NI-880S MRF6S18140HSR3 MRF6S18140HR3 MRF6S18140HSR3 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION B PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY Revision Date Description 0 Sept. 2006 • Initial Release of Data Sheet 1 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 6 • Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 1.1 Dec. 2009 • Corrected data sheet to reflect RF Test Reduction frequency described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Data sheet archived. Part no longer manufactured. MRF6S18140HR3 MRF6S18140HSR3 RF Device Data Freescale Semiconductor 11 ARCHIVE INFORMATION ARCHIVE INFORMATION The following table summarizes revisions to this document. Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008-2009. All rights reserved. MRF6S18140HR3 MRF6S18140HSR3 Document Number: MRF6S18140H Rev. 1.1, 12/2009 12 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: