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MRF6S19100MR1

MRF6S19100MR1

  • 厂商:

    NXP(恩智浦)

  • 封装:

    TO270-4

  • 描述:

    FET RF 68V 1.99GHZ TO270-4

  • 数据手册
  • 价格&库存
MRF6S19100MR1 数据手册
Document Number: MRF6S19100N Rev. 3, 12/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6S19100NR1 MRF6S19100NBR1 LIFETIME BUY Designed for N--CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., f = 1987.5 MHz, IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • N Suffix Indicates Lead--Free Terminations • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. 1930--1990 MHz, 22 W AVG., 28 V 2 x N--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6S19100NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6S19100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 75°C, 23 W CW RθJC 0.61 0.65 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor °C/W LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRF6S19100NR1 MRF6S19100NBR1 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) — 0.24 — Vdc Crss — 1.5 — pF Characteristic LIFETIME BUY Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1987.5 MHz, f2 = 1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14.5 16 dB Drain Efficiency ηD 24 25.5 36 % Intermodulation Distortion IM3 --47 --37 --35 dBc ACPR --60 --51 --48 dBc IRL — --12 --10 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRF6S19100NR1 MRF6S19100NBR1 2 RF Device Data Freescale Semiconductor R1 + VSUPPLY R2 C1 C2 C3 C4 Z5 C5 C6 Z12 RF INPUT R3 Z1 Z2 Z3 Z6 Z7 Z8 Z9 Z4 RF OUTPUT Z10 C8 C7 DUT Z11 VSUPPLY LIFETIME BUY C9 Z1, Z10 Z2 Z3 Z4 Z5 Z6 0.743″ x 0.084″ Microstrip 0.818″ x 0.084″ Microstrip 0.165″ x 0.386″ Microstrip 0.505″ x 0.800″ Microstrip 0.323″ x 0.040″ Microstrip 0.160″ x 0.880″ Microstrip Z7 Z8 Z9 Z11, Z12 PCB C10 C11 0.319″ x 0.880″ Microstrip 0.355″ x 0.215″ Microstrip 0.661″ x 0.084″ Microstrip 1.328″ x 0.120″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2 100 nF Chip Capacitor C12065C104KAT ATC C3, C7 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C4, C8, C9 9.1 pF Chip Capacitors ATC100B9R1BT500XT ATC C5, C6, C10, C11 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 VBIAS MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 3 C3 C4 R1 CUT OUT AREA C7 LIFETIME BUY C5 R3 C1 MRF6S19100N/NB, Rev. 5 C6 C8 C9 Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout C10 C11 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R2 C2 MRF6S19100NR1 MRF6S19100NBR1 4 RF Device Data Freescale Semiconductor 15.6 Gps, POWER GAIN (dB) 26.5 ηD 15.5 26 Gps 15.4 15.3 15.2 15.1 25.5 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA 2--Carrier N--CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) --30 --36 IM3 --42 IRL 15 14.9 25 --48 --54 ACPR --60 14.8 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 --12 --16 --20 --24 --28 --32 --36 35.5 ηD 15.2 15.1 Gps 15 14.9 14.8 35 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 34 34.5 --25 --30 IM3 14.7 --35 IRL 14.6 14.5 VDD = 28 Vdc, Pout = 40 W (Avg.) IDQ = 950 mA, 2--Carrier N--CDMA --40 --45 ACPR --50 14.4 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 --10 --15 --20 --25 --30 --35 --40 IRL, INPUT RETURN LOSS (dB) 15.3 f, FREQUENCY (MHz) Figure 4. 2--Carrier N--CDMA Broadband Performance @ Pout = 40 Watts Avg. 17 --10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1425 mA 16 Gps, POWER GAIN (dB) 36 IM3 (dBc), ACPR (dBc) 15.4 ηD, DRAIN EFFICIENCY (%) Figure 3. 2--Carrier N--CDMA Broadband Performance @ Pout = 22 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 1190 mA 950 mA 15 710 mA 14 475 mA 13 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurements, 2.5 MHz Tone Spacing 12 11 1 10 100 300 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two--Tone Measurements, 2.5 MHz Tone Spacing --20 --30 1425 mA IDQ = 475 mA --40 --50 950 mA 710 mA --60 1 1190 mA 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 15.7 IRL, INPUT RETURN LOSS (dB) 27 IM3 (dBc), ACPR (dBc) 15.8 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (dBm) 3rd Order --40 5th Order --50 7th Order --60 0.1 10 1 P1dB = 51.13 dBm (129.72 W) 53 Actual 51 49 VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 47 45 30 100 32 34 36 38 42 40 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TWO--TONE SPACING (MHz) 50 VDD = 28 Vdc, IDQ = 950 mA TC = 85_C f1 = 1958.75 MHz, f2 = 1961.25 MHz 40 2--Carrier N--CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel IM3 Bandwidth, PAR = 9.8 dB 30 @ 0.01% Probability (CCDF) --20 --30_C 85_C --30 25_C --30_C --40 ηD 20 ACPR Gps 0 1 10 --50 --30_C 25_C 85_C 10 100 --60 --70 200 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2--Carrier N--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power TC = --30_C 16 25_C 15 85_C Gps 25_C 85_C 12 11 60 15 50 40 30 14 13 16 ηD VDD = 28 Vdc IDQ = 950 mA f = 1960 MHz 1 20 10 10 100 0 300 Gps, POWER GAIN (dB) 17 --30_C 70 ηD, DRAIN EFFICIENCY (%) 18 Gps, POWER GAIN (dB) P3dB = 52.156 dBm (164.29 W) 55 IM3 (dBc), ACPR (dBc) --30 Ideal 57 14 13 VDD = 24 V 12 32 V 28 V 11 IDQ = 950 mA f = 1960 MHz 10 0 50 100 150 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 59 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz --20 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) --10 200 MRF6S19100NR1 MRF6S19100NBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 107 106 105 90 110 130 150 170 190 210 230 250 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 22 W Avg., and ηD = 25.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature N--CDMA TEST SIGNAL 0 100 1.2288 MHz Channel BW --10 10 --20 1 --IM3 in 1.2288 MHz Integrated BW --30 +IM3 in 1.2288 MHz Integrated BW --40 0.1 IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) LIFETIME BUY TJ, JUNCTION TEMPERATURE (°C) --60 --70 2 4 6 --ACPR in 30 kHz Integrated BW --80 0.0001 0 --50 8 PEAK--TO--AVERAGE (dB) Figure 13. 2--Carrier CCDF N--CDMA 10 +ACPR in 30 kHz Integrated BW --90 --100 --7.5 --6 --4.5 --3 --1.5 0 1.5 3 4.5 6 f, FREQUENCY (MHz) Figure 14. 2--Carrier N--CDMA Spectrum 7.5 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 MTTF (HOURS) 108 MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 7 LIFETIME BUY Zload f = 1990 MHz f = 1930 MHz f = 1930 MHz f = 1990 MHz Zsource VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg. f MHz Zsource Ω Zload Ω 1930 2.51 -- j4.80 1.74 -- j3.11 1960 2.31 -- j4.54 1.67 -- j2.85 1990 2.12 -- j4.20 1.63 -- j2.55 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 5 Ω MRF6S19100NR1 MRF6S19100NBR1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 9 MRF6S19100NR1 MRF6S19100NBR1 10 RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 11 MRF6S19100NR1 MRF6S19100NBR1 12 RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 13 MRF6S19100NR1 MRF6S19100NBR1 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 2 Dec. 2008 LIFETIME BUY Revision Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated PCB information to show more specific material details, Figure 1 Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. • Added Product Documentation and Revision History, p. 15 3 Dec. 2010 • Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable overlay, p. 1, 2 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages MRF6S19100NR1 MRF6S19100NBR1 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005--2006, 2008, 2010. All rights reserved. MRF6S19100NR1 MRF6S19100NBR1 Document Number: MRF6S19100N Rev. 3, 12/2010 16 RF Device Data Freescale Semiconductor
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