Document Number: MRF6S19100N
Rev. 3, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
MRF6S19100NR1
MRF6S19100NBR1
LIFETIME BUY
Designed for N--CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier N--CDMA Performance: VDD = 28 Volts, IDQ = 950 mA,
Pout = 22 Watts Avg., f = 1987.5 MHz, IS--95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — --37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — --51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead--Free Terminations
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
1930--1990 MHz, 22 W AVG., 28 V
2 x N--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 1486--03, STYLE 1
TO--270 WB--4
PLASTIC
MRF6S19100NR1
CASE 1484--04, STYLE 1
TO--272 WB--4
PLASTIC
MRF6S19100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +68
Vdc
Gate--Source Voltage
VGS
--0.5, +12
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 23 W CW
RθJC
0.61
0.65
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2005--2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
°C/W
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF6S19100NR1 MRF6S19100NBR1
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 950 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
—
0.24
—
Vdc
Crss
—
1.5
—
pF
Characteristic
LIFETIME BUY
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg., f1 = 1987.5 MHz, f2 =
1990 MHz, 2--Carrier N--CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz
Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
--47
--37
--35
dBc
ACPR
--60
--51
--48
dBc
IRL
—
--12
--10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF6S19100NR1 MRF6S19100NBR1
2
RF Device Data
Freescale Semiconductor
R1
+
VSUPPLY
R2
C1
C2
C3
C4
Z5
C5
C6
Z12
RF
INPUT
R3
Z1
Z2
Z3
Z6
Z7
Z8
Z9
Z4
RF
OUTPUT
Z10
C8
C7
DUT
Z11
VSUPPLY
LIFETIME BUY
C9
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.818″ x 0.084″ Microstrip
0.165″ x 0.386″ Microstrip
0.505″ x 0.800″ Microstrip
0.323″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
C10
C11
0.319″ x 0.880″ Microstrip
0.355″ x 0.215″ Microstrip
0.661″ x 0.084″ Microstrip
1.328″ x 0.120″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
100 nF Chip Capacitor
C12065C104KAT
ATC
C3, C7
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C4, C8, C9
9.1 pF Chip Capacitors
ATC100B9R1BT500XT
ATC
C5, C6, C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
VBIAS
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
3
C3
C4
R1
CUT OUT AREA
C7
LIFETIME BUY
C5
R3
C1
MRF6S19100N/NB, Rev. 5
C6
C8
C9
Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout
C10 C11
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
R2 C2
MRF6S19100NR1 MRF6S19100NBR1
4
RF Device Data
Freescale Semiconductor
15.6
Gps, POWER GAIN (dB)
26.5
ηD
15.5
26
Gps
15.4
15.3
15.2
15.1
25.5
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 950 mA
2--Carrier N--CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
--30
--36
IM3
--42
IRL
15
14.9
25
--48
--54
ACPR
--60
14.8
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
--12
--16
--20
--24
--28
--32
--36
35.5
ηD
15.2
15.1
Gps
15
14.9
14.8
35
2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
34
34.5
--25
--30
IM3
14.7
--35
IRL
14.6
14.5
VDD = 28 Vdc, Pout = 40 W (Avg.)
IDQ = 950 mA, 2--Carrier N--CDMA
--40
--45
ACPR
--50
14.4
1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000
--10
--15
--20
--25
--30
--35
--40
IRL, INPUT RETURN LOSS (dB)
15.3
f, FREQUENCY (MHz)
Figure 4. 2--Carrier N--CDMA Broadband Performance @ Pout = 40 Watts Avg.
17
--10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1425 mA
16
Gps, POWER GAIN (dB)
36
IM3 (dBc), ACPR (dBc)
15.4
ηD, DRAIN
EFFICIENCY (%)
Figure 3. 2--Carrier N--CDMA Broadband Performance @ Pout = 22 Watts Avg.
Gps, POWER GAIN (dB)
LIFETIME BUY
f, FREQUENCY (MHz)
1190 mA
950 mA
15
710 mA
14
475 mA
13
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
12
11
1
10
100
300
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two--Tone Measurements, 2.5 MHz Tone Spacing
--20
--30
1425 mA
IDQ = 475 mA
--40
--50
950 mA
710 mA
--60
1
1190 mA
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
15.7
IRL, INPUT RETURN LOSS (dB)
27
IM3 (dBc), ACPR (dBc)
15.8
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (dBm)
3rd Order
--40
5th Order
--50
7th Order
--60
0.1
10
1
P1dB = 51.13 dBm (129.72 W)
53
Actual
51
49
VDD = 28 Vdc, IDQ = 950 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
47
45
30
100
32
34
36
38
42
40
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO--TONE SPACING (MHz)
50
VDD = 28 Vdc, IDQ = 950 mA
TC = 85_C
f1 = 1958.75 MHz, f2 = 1961.25 MHz
40 2--Carrier N--CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
IM3
Bandwidth, PAR = 9.8 dB
30 @ 0.01% Probability (CCDF)
--20
--30_C
85_C --30
25_C
--30_C
--40
ηD
20
ACPR
Gps
0
1
10
--50
--30_C
25_C
85_C
10
100
--60
--70
200
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2--Carrier N--CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
TC = --30_C
16
25_C
15
85_C
Gps
25_C
85_C
12
11
60
15
50
40
30
14
13
16
ηD
VDD = 28 Vdc
IDQ = 950 mA
f = 1960 MHz
1
20
10
10
100
0
300
Gps, POWER GAIN (dB)
17
--30_C
70
ηD, DRAIN EFFICIENCY (%)
18
Gps, POWER GAIN (dB)
P3dB = 52.156 dBm (164.29 W)
55
IM3 (dBc), ACPR (dBc)
--30
Ideal
57
14
13
VDD = 24 V
12
32 V
28 V
11
IDQ = 950 mA
f = 1960 MHz
10
0
50
100
150
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
59
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
--20
LIFETIME BUY
IMD, INTERMODULATION DISTORTION (dBc)
--10
200
MRF6S19100NR1 MRF6S19100NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
107
106
105
90
110
130
150
170
190
210
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 22 W Avg., and ηD = 25.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
N--CDMA TEST SIGNAL
0
100
1.2288 MHz
Channel BW
--10
10
--20
1
--IM3 in
1.2288 MHz
Integrated BW
--30
+IM3 in
1.2288 MHz
Integrated BW
--40
0.1
IS--95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
LIFETIME BUY
TJ, JUNCTION TEMPERATURE (°C)
--60
--70
2
4
6
--ACPR in 30 kHz
Integrated BW
--80
0.0001
0
--50
8
PEAK--TO--AVERAGE (dB)
Figure 13. 2--Carrier CCDF N--CDMA
10
+ACPR in 30 kHz
Integrated BW
--90
--100
--7.5
--6
--4.5
--3
--1.5
0
1.5
3
4.5
6
f, FREQUENCY (MHz)
Figure 14. 2--Carrier N--CDMA Spectrum
7.5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
MTTF (HOURS)
108
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
7
LIFETIME BUY
Zload
f = 1990 MHz
f = 1930 MHz
f = 1930 MHz
f = 1990 MHz
Zsource
VDD = 28 Vdc, IDQ = 950 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
2.51 -- j4.80
1.74 -- j3.11
1960
2.31 -- j4.54
1.67 -- j2.85
1990
2.12 -- j4.20
1.63 -- j2.55
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Zo = 5 Ω
MRF6S19100NR1 MRF6S19100NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
9
MRF6S19100NR1 MRF6S19100NBR1
10
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
11
MRF6S19100NR1 MRF6S19100NBR1
12
RF Device Data
Freescale Semiconductor
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S19100NR1 MRF6S19100NBR1
14
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Date
2
Dec. 2008
LIFETIME BUY
Revision
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for
standardization across products, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 220°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in Removed Forward Transconductance from On Characteristics table as it no
longer provided usable information, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Figure 1 Test Circuit Schematic,
p. 3
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 9--11. Added pin numbers 1 through 4
on Sheet 1.
• Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 12--14. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
• Added Product Documentation and Revision History, p. 15
3
Dec. 2010
• Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable
overlay, p. 1, 2
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
MRF6S19100NR1 MRF6S19100NBR1
RF Device Data
Freescale Semiconductor
15
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MRF6S19100NR1 MRF6S19100NBR1
Document Number: MRF6S19100N
Rev. 3, 12/2010
16
RF Device Data
Freescale Semiconductor
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