Freescale Semiconductor
Technical Data
Document Number: MRF6S19140H
Rev. 5, 5/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1150 mA,
Pout = 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 27.5%
IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19140HR3
MRF6S19140HSR3
1930 - 1990 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S19140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S19140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 140 W CW
Case Temperature 77°C, 29 W CW
RθJC
0.33
0.38
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2004-2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S19140HR3 MRF6S19140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1150 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
Power Gain
Gps
15
16
18
dB
Drain Efficiency
ηD
26
27.5
—
%
Intermodulation Distortion
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 15
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S19140HR3 MRF6S19140HSR3
2
RF Device Data
Freescale Semiconductor
+
VBIAS
C5
C9
C11
C15
Z8
Z9
VSUPPLY
B1
R3
+
C13
R1
C7
C3
Z5
Z6
Z7
Z10
R5
C2
Z1
RF
INPUT
Z2
Z3
RF
OUTPUT
Z4
C1
DUT
VBIAS
VSUPPLY
B2
R4
C6
+
C14
R2
C8
C10
C12
C4
R6
Z1
Z2
Z3
Z4
Z5
Z6
0.864″
1.373″
0.282″
0.103″
0.094″
0.399″
x 0.082″
x 0.082″
x 0.900″
x 0.900″
x 1.055″
x 1.055″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
PCB
0.115″ x 0.569″ Microstrip
0.191″ x 0.289″ Microstrip
0.681″ x 0.081″ Microstrip
1.140″ x 0.081″ Microstrip
Arlon GX0300 - 55 - 22, 0.030″, εr = 2.5
Figure 1. MRF6S19140HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S19140HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Beads, Surface Mount
2743019447
Fair - Rite
C1, C2
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C3, C4, C5, C6
9.1 pF Chip Capacitors
ATC100B9R1CT500XT
ATC
C7, C8, C9, C10, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C13, C14
47 μF, 50 V Electrolytic Capacitors
EMVY500ADA470MF80G
Nippon
C15
470 μF, 63 V Electrolytic Capacitor
ESMG630ELL471MK205
United Chemi - Con
R1, R2
560 kΩ, 1/4 W Chip Resistors
CRCW12065600FKTA
Vishay
R3, R4
1.0 kΩ, 1/4 W Chip Resistors
CRCW12061001FKTA
Vishay
R5, R6
12 Ω, 1/4 W Chip Resistors
CRCW120612R0FKTA
Vishay
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
3
6S19140
C13
R3
C5
B1
R1
R5
C9 C11
C3
C7
C15
C1
CUT OUT AREA
C2
C8
R2
R4
B2
R6
C4
C6
C14
C10 C12
© Motorola, Inc.
2002 DS1464
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These
changes will have no impact on form, fit or function of the current product.
Figure 2. MRF6S19140HR3(HSR3) Test Circuit Component Layout
MRF6S19140HR3 MRF6S19140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
16
30
20
Gps
14
12
10
8
IRL
VDD = 28 Vdc, Pout = 29 W (Avg.), IDQ = 1150 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
0
−10
−20
IM3
6
4
10
−40
−60
ACPR
−80
2
0
1910 1920
1930 1940
1950
1960
1970
1980 1990
−100
2000
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
40
ηD
IM3 (dBc), ACPR (dBc)
20
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 29 Watts Avg.
14
40
Gps
12
10
VDD = 28 Vdc, Pout = 75 W (Avg.), IDQ = 1150 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
30
20
0
IRL
−20
8
IM3
6
−40
ACPR
4
2
1910
−60
1920
1930 1940
1950
1960
1970
1980 1990
−80
2000
−10
−12
−14
−16
−18
−20
−22
−24
−26
−28
−30
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
16
ηD, DRAIN
EFFICIENCY (%)
50
ηD
IM3 (dBc), ACPR (dBc)
18
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 75 Watts Avg.
18
−10
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1700 mA
Gps, POWER GAIN (dB)
17
1500 mA
1150 mA
16
900 mA
15
600 mA
14
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
13
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
−20
900 mA
−30
IDQ = 1700 mA
600 mA
−40
−50
1150 mA
1500 mA
−60
1
10
100
400
1
10
100
1000
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
5
0
58
−10
Pout, OUTPUT POWER (dBm)
VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1150 mA
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
−20
3rd Order
−30
5th Order
−40
7th Order
−50
−60
0.1
1
10
100
Ideal
57
56
55
P3dB = 53.1 dBm (204 W)
54
P1dB = 52.3 dBm (171 W)
53
52
Actual
51
50
49
48
47
46
VDD = 28 Vdc, IDQ = 1150 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
28 29 30 31 32 33 34 35
36 37
38 39 40 41 42
TWO −TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
50
−20
VDD = 28 Vdc, IDQ = 1150 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel
Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
TC = 25°C
40
30
IM3
−30
ηD
−40
ACPR
20
−50
Gps
10
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−60
−70
100
0
1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
70
17
Gps
50
14
40
13
30
12
20
VDD = 28 Vdc, IDQ = 1150 mA
f = 1960 MHz, TC = 25°C
ηD
10
1
10
100
10
0
300
16
Gps, POWER GAIN (dB)
15
11
17
60
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
18
VDD = 32 V
15
14
28 V
13
24 V
12
11
10
IDQ = 1150 mA
f = 1960 MHz
9
8
0
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
250
MRF6S19140HR3 MRF6S19140HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 29 W Avg., and ηD = 27.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
Channel BW
−10
10
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
−20
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK −TO−AVERAGE (dB)
Figure 13. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
7
f = 2020 MHz
Zload
Zo = 5 Ω
f = 1900 MHz
Zsource
f = 1900 MHz
f = 2020 MHz
VDD = 28 Vdc, IDQ = 1150 mA, Pout = 29 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1900
2.27 - j3.95
1.13 - j0.67
1930
2.00 - j4.24
1.11 - j0.60
1960
1.72 - j3.96
1.07 - j0.46
1990
1.80 - j3.51
1.06 - j0.30
2020
1.69 - j3.17
1.01 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19140HR3 MRF6S19140HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
4
2X
1
Q
bbb
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
M
B
(FLANGE)
3
K
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
(LID)
B
S
(LID)
M
(INSULATOR)
B
M
H
C
T
A
A
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
E
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
SEATING
PLANE
CASE 465B - 03
ISSUE D
NI - 880
MRF6S19140HR3
(FLANGE)
B
1
B
(FLANGE)
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
bbb
M
D
T A
M
B
M
M
bbb
M
T A
M
B
ccc
M
T A
M
B
ccc
M
N
R
(INSULATOR)
M
T A
M
aaa
M
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S19140HSR3
MRF6S19140HR3 MRF6S19140HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
5
May 2007
Description
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed “Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications” bullet
as functionality is standard, p. 1
• Added “Optimized for Doherty Applications” bullet to Features section, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S19140HR3 MRF6S19140HSR3
10
RF Device Data
Freescale Semiconductor
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MRF6S19140HR3 MRF6S19140HSR3
Document
Number:
RF
Device
Data MRF6S19140H
Rev. 5, 5/2007
Freescale
Semiconductor
11
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