MRF6S21100HSR5

Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and TD - SCDMA applications. • Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts, IDQ = 950 mA, Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.6% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 23 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S21100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S21100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature Tc 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 77°C, 23 W CW RθJC 0.45 0.52 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF6S21100HR3 MRF6S21100HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 3A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 950 mAdc) VGS(Q) 2 2.8 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.9 17.5 dB Drain Efficiency ηD 26 27.6 — % Intermodulation Distortion IM3 — - 37 - 35 dBc ACPR — - 39.5 - 38 dBc IRL — - 16 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21100HR3 MRF6S21100HSR3 2 RF Device Data Freescale Semiconductor B1 R2 VBIAS R1 + C1 + C2 C4 + C9 C8 C3 + C10 + C11 C13 + C12 VSUPPLY + C14 C5 Z8 Z5 RF INPUT Z1 Z2 Z3 Z6 Z7 Z9 Z10 Z11 Z4 Z12 RF OUTPUT C7 C6 DUT Z1, Z12 Z2 Z3 Z4 Z5 Z6 1.250″ 1.070″ 0.330″ 0.093″ 1.255″ 0.160″ x 0.084″ x 0.084″ x 0.800″ x 0.800″ x 0.040″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.320″ x 0.880″ Microstrip 0.120″ x 0.820″ Microstrip 0.035″ x 0.320″ Microstrip 0.335″ x 0.200″ Microstrip 0.650″ x 0.084″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6S21100HR3(SR3) Test Circuit Schematic Table 5. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair - Rite C1 1.0 μF, 50 V Tantalum Capacitor T491C105M050AT Kemet C2 10 μF, 50 V Electrolytic Capacitor EEV - HB1H100P Panasonic C3 1000 pF 100B Chip Capacitor ATC100B102JT500XT ATC C4, C13 0.1 μF 100B Chip Capacitors CDR33BX104AKWY Kemet C5 5.1 pF Chip Capacitor ATC100B5R1JT500XT ATC C6, C7 15 pF Chip Capacitors ATC100B150JT500XT ATC C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC C9, C10, C11, C12 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C14 100 μF, 50 V Electrolytic Capacitor 515D107M050BB6AE3 Vishay/Sprague R1 1.0 kW, 1/8 W Chip Resistor CRCW08051000FKTA Vishay R2 10 W, 1/8 W Chip Resistor CRCW080510R0FKTA Vishay MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 3 C1 C14 C9 C10 R1 B1 R2 C8 C5 VDD VGG C11 C2 C4 C12 C3 C7 CUT OUT AREA C6 C13 2.1 GHz NI780 Rev 4 Figure 2. MRF6S21100HR3(SR3) Test Circuit Component Layout MRF6S21100HR3 MRF6S21100HSR3 4 RF Device Data Freescale Semiconductor ηD VDD = 28 Vdc Pout = 23 W (Avg.) IDQ = 950 mA 2−Carrier W−CDMA 10 MHz Carrier Spacing 15.8 27 Gps −36 IM3 −U 15.6 −38 IRL 15.4 IM3 −L −40 ACPR −U 15.2 −42 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) ACPR −L 15 2080 2100 2120 2140 2160 2180 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 16 28 −44 2200 −10 −20 −30 −40 IRL, INPUT RETURN LOSS (dB) 16.2 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 23 Watts Avg. 44 ηD 15.2 15 42 VDD = 28 Vdc Pout = 55 W (Avg.) IDQ = 950 mA 40 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth IM3 −L IRL Gps −24 IM3 −U 14.8 −26 PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.6 14.4 2080 −28 ACPR −U ACPR −L 2100 2120 2140 2160 2180 −30 2200 IM3 (dBc), ACPR (dBc) G ps , POWER GAIN (dB) 15.4 −10 −20 −30 −40 IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%) 15.6 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 55 Watts Avg. 17.5 IDQ = 1450 mA G ps , POWER GAIN (dB) 17 1200 mA 16.5 950 mA 16 15.5 700 mA 15 14.5 450 mA 14 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing 13.5 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two −Tone Measurements, 10 MHz Tone Spacing −25 −30 IDQ = 450 mA −35 1450 mA 1200 mA −40 950 mA −45 −50 700 mA −55 1 10 100 300 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 5 −20 56 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 950 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −25 −30 Pout , OUTPUT POWER (dBm) 3rd Order −35 −40 5th Order −45 7th Order −50 −55 −60 Ideal P3dB = 51.5 dBm (141 W) 54 P1dB = 50.9 dBm (123 W) 52 Actual 50 48 VDD = 28 Vdc, IDQ = 950 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 46 44 0.1 1 100 10 28 30 32 TWO −TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 34 36 38 40 42 Pin, INPUT POWER (dBm) Figure 8. Pulsed CW Output Power versus Input Power 50 −10 ηD VDD = 28 Vdc, IDQ = 950 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 40 30 IM3 −20 −30 ACPR 20 Gps 10 −40 IM3 (dBc), ACPR (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS −50 0 −60 0.4 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power G ps , POWER GAIN (dB) 14 17 50 16 40 12 30 10 20 VDD = 28 Vdc IDQ = 950 mA f = 2140 MHz 8 ηD 10 6 0 1 10 100 200 G ps , POWER GAIN (dB) Gps 16 60 ηD, DRAIN EFFICIENCY (%) 18 15 32 V 14 VDD = 24 V 28 V 13 IDQ = 950 mA, f = 2140 MHz 12 0 20 40 60 80 100 120 140 160 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 180 MRF6S21100HR3 MRF6S21100HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 27.6%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 12. MTTF versus Junction Temperature W - CDMA TEST SIGNAL +20 100 3.84 MHz Channel BW +30 0 −10 1 −20 (dB) PROBABILITY (%) 10 0.1 −30 −40 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 −50 −60 −70 0.0001 0 2 4 6 8 10 PEAK −TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −80 −25 −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 7 f = 2200 MHz Zo = 10 Ω Zload f = 2080 MHz f = 2200 MHz Zsource f = 2080 MHz VDD = 28 Vdc, IDQ = 950 mA, Pout = 23 W Avg. f MHz Zsource Ω Zload Ω 2080 2.44 - j6.3 1.83 - j3.0 2110 2.25 - j6.1 1.74 - j2.8 2140 2.09 - j5.8 1.61 - j2.6 2170 1.98 - j5.6 1.59 - j2.5 2200 1.85 - j5.4 1.52 - j2.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 15. Series Equivalent Source and Load Impedance MRF6S21100HR3 MRF6S21100HSR3 8 RF Device Data Freescale Semiconductor TD - SCDMA CHARACTERIZATION R2 B1 VBIAS R1 + C1 + C2 C4 C3 C8 + C9 + C10 + C11 + C12 C13 VSUPPLY + C14 C5 Z11 Z5 Z1 RF INPUT Z2 Z3 Z6 Z7 Z8 Z9 Z10 Z4 RF OUTPUT C7 C6 DUT Z1 Z2 Z3 Z4 Z5 Z6 1.250″ 0.930″ 0.470″ 0.090″ 1.500″ 0.160″ x 0.084″ x 0.084″ x 0.800″ x 0.800″ x 0.040″ x 0.880″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z7 Z8 Z9 Z10 Z11 PCB 0.320″ x 0.880″ Microstrip 0.370″ x 0.200″ Microstrip 0.650″ x 0.084″ Microstrip 1.230″ x 0.084″ Microstrip 0.870″ x 0.120″ Microstrip Arlon GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 16. MRF6S21100HR3(SR3) Test Circuit Schematic — TD - SCDMA Table 6. MRF6S21100HR3(SR3) Test Circuit Component Designations and Values — TD - SCDMA Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair - Rite C1 1.0 μF, 50 V Tantalum Capacitor T491C105M050AT Kemet C2 10 μF, 50 V Electrolytic Capacitor EEV - HB1H100P Panasonic C3 1000 pF 100B Chip Capacitor ATC100B102JT500XT ATC C4, C13 0.1 μF 100B Chip Capacitors CDR33BX104AKWY Kemet C5 5.1 pF Chip Capacitor ATC100B5R1JT500XT ATC C6, C7 15 pF Chip Capacitors ATC100B150JT500XT ATC C8 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC C9, C10, C11, C12 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C14 100 μF, 50 V Electrolytic Capacitor 515D107M050BB6AE3 Vishay/Sprague R1 1.0 kW, 1/8 W Chip Resistor CRCW08051000FKTA Vishay R2 10 W, 1/8 W Chip Resistor CRCW080510R0FKTA Vishay MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 9 C1 C14 C9 C10 R1 B1 R2 C8 C5 VDD VGG C11 C2 C4 C12 C3 C7 CUT OUT AREA C6 C13 2.1 GHz NI780 Rev 4 Figure 17. MRF6S21100HR3(SR3) Test Circuit Component Layout — TD - SCDMA MRF6S21100HR3 MRF6S21100HSR3 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −30 18 −35 15 ηD ALT/ACPR (dBc) Adj −U −40 12 Adj −L 9 −45 6 −50 Alt−L 3 −55 ηD, DRAIN EFFICIENCY (%) 3−Carrier TD−SCDMA VDD = 28 V, IDQ = 800 mA f = 2017.5 MHz Alt−U −60 0 0 2 1 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) AVG. Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power −30 18 ALT/ACPR (dBc) −35 ηD 15 12 −40 Adj −U −45 9 Adj −L Alt−L −50 6 Alt−U −55 −60 0.5 3 ηD, DRAIN EFFICIENCY (%) 6−Carrier TD−SCDMA VDD = 28 V, IDQ = 800 mA f = 2017.5 MHz 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD - SCDMA TEST SIGNAL −30 −30 1.28 MHz Channel BW −40 −50 −50 −60 −70 +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT2 in 1.28 MHz BW −3.2 MHz Offset −80 −90 −100 −ALT2 in 1.28 MHz BW −3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset −100 −110 −120 (dBm) (dBm) −90 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −60 −70 −80 1.28 MHz Channel BW −40 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz −110 +ALT1 in 1.28 MHz BW +1.6 MHz Offset −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz 1.5 MHz Span 15 MHz f, FREQUENCY (MHz) Figure 20. 3 - Carrier TD - SCDMA Spectrum −120 −ALT1 in 1.28 MHz BW −1.6 MHz Offset −130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) Figure 21. 6 - Carrier TD - SCDMA Spectrum MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 11 Zo = 5 Ω f = 2070 MHz Zload f = 1950 MHz Zsource f = 1950 MHz f = 2070 MHz VDD = 28 Vdc, IDQ = 800 mA f MHz Zsource W Zload W 1950 1.04 - j4.28 1.38 - j3.90 1960 1.07 - j4.31 1.41 - j3.92 1970 0.96 - j4.13 1.29 - j3.71 1980 0.82 - j3.71 1.12 - j3.34 1990 0.79 - j3.34 1.07 - j2.96 2000 0.82 - j3.15 1.08 - j2.75 2010 0.88 - j3.16 1.12 - j2.76 2020 0.84 - j3.30 1.11 - j2.86 2030 0.83 - j3.47 1.12 - j3.01 2040 0.91 - j3.71 1.22 - j3.20 2050 0.91 - j3.90 1.25 - j3.34 2060 0.81 - j3.81 1.15 - j3.27 2070 0.76 - j3.45 1.09 - j2.92 Zsource = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance — TD - SCDMA MRF6S21100HR3 MRF6S21100HSR3 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A B M M ccc M T A M M aaa M T A M M T A B M (LID) B S (LID) ccc H R (INSULATOR) M (INSULATOR) B M C F E A T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 B D bbb M T A M B M N M R (LID) ccc M T A M B M ccc M T A M T A M S (INSULATOR) bbb M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF CASE 465 - 06 ISSUE G NI - 780 MRF6S21100HR3 4X U (FLANGE) (FLANGE) INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc F T DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 7 Jan. 2007 Description • Added “TD - SCDMA” to data sheet description paragraph, p. 1 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9 - 12 • Added Product Documentation and Revision History, p. 14 MRF6S21100HR3 MRF6S21100HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MRF6S21100HR3 MRF6S21100HSR3 Document Number: RF Device Data MRF6S21100H Rev. 7, 1/2007 Freescale Semiconductor 15