MRF6S21100NBR1

Document Number: MRF6S21100N Rev. 3, 12/2008 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 LIFETIME BUY Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio, WLL and TD--SCDMA applications. • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA, Pout = 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14.5 dB Drain Efficiency — 25.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 225°C Capable Plastic Package • N Suffix Indicates Lead--Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 2110--2170 MHz, 23 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6S21100NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6S21100NBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 73°C, 23 W CW RθJC 0.57 0.66 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2005--2008. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRF6S21100NR1 MRF6S21100NBR1 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1B (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1050 mAdc) VGS(Q) — 2.8 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1050 mAdc, Measured in Functional Test) VGG(Q) 2.2 3.1 4.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.3 Adc) VDS(on) — 0.24 — Vdc Crss — 1.5 — pF Characteristic LIFETIME BUY Off Characteristics On Characteristics Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 = 2157.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14.5 16 dB Drain Efficiency ηD 24 25.5 36 % Intermodulation Distortion IM3 --47 --37 --35 dBc ACPR --50 --40 --38 dBc IRL — --12 --10 dB Adjacent Channel Power Ratio Input Return Loss 1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part is internally matched both on input and output. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRF6S21100NR1 MRF6S21100NBR1 2 RF Device Data Freescale Semiconductor B1 + R2 C1 C2 VSUPPLY C3 R3 C4 Z5 C5 C6 Z12 RF INPUT Z6 Z1 Z2 C7 Z3 C8 Z7 Z8 Z9 Z4 Z10 RF OUTPUT C9 DUT Z11 VSUPPLY LIFETIME BUY C10 Z1, Z10 Z2 Z3 Z4 Z5 Z6 0.743″ x 0.084″ Microstrip 0.893″ x 0.084″ Microstrip 0.175″ x 0.084″ Microstrip 0.420″ x 0.800″ Microstrip 1.231″ x 0.040″ Microstrip 0.100″ x 0.880″ Microstrip Z7 Z8 Z9 Z11, Z12 PCB C11 C12 0.259″ x 0.880″ Microstrip 0.215″ x 0.230″ Microstrip 0.787″ x 0.084″ Microstrip 1.171″ x 0.120″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.5 Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 25008051107Y0 Fair--Rite C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2 0.01 μF Chip Capacitor C1825C103J1GAC Kemet C3, C4, C10 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C5, C6, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C7 10 pF Chip Capacitor ATC100B100BT500XT ATC C8 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC C9 5.1 pF Chip Capacitor (MRF6S21100NR1) 8.2 pF Chip Capacitor (MRF6S21100NBR1) ATC100B5R1BT500XT ATC100B8R2BT500XT ATC ATC R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 R1 VBIAS MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 3 C4 R1 R2 C2 C5 LIFETIME BUY C7 MRF6S21100N/NB, Rev. 3 C8 CUT OUT AREA C1 C6 C9 C10 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout C11 C12 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C3 B1 R3 MRF6S21100NR1 MRF6S21100NBR1 4 RF Device Data Freescale Semiconductor ηD 27 26 25 14.2 24 Gps 14 --31 13.8 --34 IM3 --37 13.6 ACPR 13.4 13.2 13 2060 2080 --40 --43 IRL 2100 2120 2140 2160 2180 2200 --46 2220 2240 --9 --10 --11 --12 --13 --14 IRL, INPUT RETURN LOSS (dB) 14.4 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 14.6 28 VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 14.8 IM3 (dBc), ACPR (dBc) 15 37 36 13.6 13.4 35 VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 13.2 13 IM3 34 --24 --26 --28 12.8 12.6 --30 ACPR 12.4 12.2 2060 2080 --32 IRL 2100 2120 2140 2160 2180 2200 --34 2220 2240 --9 IM3 (dBc), ACPR (dBc) ηD --10 --11 --12 --13 --14 IRL, INPUT RETURN LOSS (dB) 38 14 13.8 f, FREQUENCY (MHz) Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 45 Watts Avg. 16 1050 mA 787 mA 13 12 10 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 1312 mA 14 11 --10 IDQ = 1575 mA 15 Gps, POWER GAIN (dB) 14.2 ηD, DRAIN EFFICIENCY (%) Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 22.5 Watts Avg. Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 525 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 0.1 1 10 100 300 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --20 1575 mA --30 IDQ = 525 mA --40 1312 mA --50 1050 mA 787 mA --60 0.1 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 TYPICAL CHARACTERISTICS MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 5 58 --10 Pout , OUTPUT POWER (dBm) VDD = 28 Vdc, Pout = 100 W (PEP) IDQ = 1050 mA, Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --20 3rd Order --30 --40 5th Order --50 56 P3dB = 51.9 dBm (156.3 W) 54 P1dB = 51.3 dBm (135.8 W) Actual 52 VDD = 28 Vdc, IDQ = 1050 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 50 7th Order --60 0.1 48 100 10 300 34 32 36 Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 38 35 30 25 20 TC = 25_C 15 --40 IM3 Gps --45 --30_C 10 46 --55 0 0.5 44 --50 85_C 25_C 5 42 Figure 8. Pulsed CW Output Power versus Input Power --20 VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz --30_C 25_C --25 f2 = 2145 MHz, 2--Carrier W--CDMA ηD 10 MHz Carrier Spacing, 3.84 MHz 25_C Channel Bandwidth, PAR = 8.5 dB --30_C --30 @ 0.01% Probability (CCDF) 85_C --35 ACPR 40 40 Pin, INPUT POWER (dBm) TWO--TONE SPACING (MHz) 1 IM3 (dBc), ACPR (dBc) 1 --60 100 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 --30_C 16 15 25_C Gps TC = --30_C 85_C 25_C 14 70 15 60 14 50 40 30 85_C Gps, POWER GAIN (dB) VDD = 28 Vdc IDQ = 1050 mA f = 2140 MHz ηD, DRAIN EFFICIENCY (%) 18 Gps, POWER GAIN (dB) Ideal 13 12 13 20 12 10 10 0 9 ηD 11 0.1 1 10 100 300 28 V 11 VDD = 24 V 0 20 40 60 80 100 120 32 V IDQ = 1050 mA f = 2140 MHz 140 160 180 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 0 LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF6S21100NR1 MRF6S21100NBR1 6 RF Device Data Freescale Semiconductor MTTF (HOURS) 108 107 106 105 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 25.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature W--CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 10 0 --10 1 (dB) PROBABILITY (%) LIFETIME BUY 90 0.1 --20 --30 --40 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 --50 0.0001 0 2 4 6 --70 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --80 --25 --20 --60 8 10 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal --15 --10 --5 0 5 10 +IM3 in 3.84 MHz BW 15 20 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 TYPICAL CHARACTERISTICS 25 MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 7 Zo = 5 Ω f = 2110 MHz Zsource Zsource f = 2170 MHz LIFETIME BUY Zload f = 2170 MHz f = 2170 MHz f = 2170 MHz Zload f = 2110 MHz f = 2110 MHz f = 2110 MHz MRF6S21100NR1 MRF6S21100NBR1 VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg. f MHz Zsource Ω Zload Ω f MHz Zsource Ω Zload Ω 2110 3.51 -- j3.78 1.62 -- j3.54 2110 3.56 -- j3.92 1.62 -- j3.47 2140 3.50 -- j3.83 1.51 -- j3.26 2140 3.55 -- j3.97 1.53 -- j3.19 2170 3.29 -- j3.78 1.41 -- j2.95 2170 3.34 -- j3.90 1.44 -- j2.89 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Input Matching Network Z source Output Matching Network Z load Figure 15. Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 5 Ω MRF6S21100NR1 MRF6S21100NBR1 8 RF Device Data Freescale Semiconductor R1 VBIAS + B1 R2 C1 C2 VSUPPLY C3 R3 C4 Z4 C5 C6 Z11 RF INPUT Z5 Z1 Z2 Z6 Z7 Z8 Z3 C7 C8 Z9 RF OUTPUT C9 DUT Z10 VSUPPLY LIFETIME BUY C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 PCB 1.250″ x 0.084″ Microstrip 0.930″ x 0.084″ Microstrip 0.470″ x 0.800″ Microstrip 0.090″ x 0.800″ Microstrip 1.500″ x 0.040″ Microstrip 0.160″ x 0.880″ Microstrip C11 C12 0.320″ x 0.880″ Microstrip 0.370″ x 0.200″ Microstrip 0.650″ x 0.084″ Microstrip 1.230″ x 0.084″ Microstrip 0.870″ x 0.120″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Ferrite Bead 25008051107Y0 Fair--Rite C1 10 μF, 35 V Tantalum Capacitor T491D106K035AT Kemet C2 0.01 μF Chip Capacitor C1825C103J1GAC Kemet C3, C4, C10 5.1 pF Chip Capacitors ATC100B5R1BT500XT ATC C5, C6, C11, C12 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C7 10 pF Chip Capacitor ATC100B100BT500XT ATC C8 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC C9 8.2 pF Chip Capacitor ATC100B8R2BT500XT ATC R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay R2 10 kΩ, 1/4 W Chip Resistor CRCW12061002FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 TD--SCDMA CHARACTERIZATION MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 9 C3 C4 R1 R2 C2 C5 C7 LIFETIME BUY C8 MRF6S21100N/NB, Rev. 3 CUT OUT AREA C1 C6 C9 C10 C11 C12 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD--SCDMA LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 B1 R3 MRF6S21100NR1 MRF6S21100NBR1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS --30 15 ηD Adj--L --40 12 9 --45 Alt--L 6 --50 3 --55 Alt--U --60 0 1 3 2 ηD, DRAIN EFFICIENCY (%) ALT/ACPR (dBc) --35 Adj--U 0 4 5 6 7 9 8 Pout, OUTPUT POWER (WATTS) AVG. --30 --35 ALT/ACPR (dBc) 18 6--Carrier TD--SCDMA VDD = 28 V, IDQ = 900 mA f = 2017.5 MHz 12 --40 Adj--U Adj--L --45 Alt--L 9 --50 6 --55 3 Alt--U --60 0.5 0 1.5 2.5 3.5 4.5 5.5 6.5 7.5 Pout, OUTPUT POWER (WATTS) AVG. Figure 19. 6--Carrier TD--SCDMA ACPR, ALT and Drain Efficiency versus Output Power TD--SCDMA TEST SIGNAL --30 --30 1.28 MHz Channel BW --40 --50 --60 --80 --90 +ALT2 in 1.28 MHz BW +3.2 MHz Offset --ALT2 in 1.28 MHz BW --3.2 MHz Offset --100 --110 --120 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz --60 --70 (dBm) --70 1.28 MHz Channel BW --40 VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz --50 (dBm) 15 ηD ηD, DRAIN EFFICIENCY (%) LIFETIME BUY Figure 18. 3--Carrier TD--SCDMA ACPR, ALT and Drain Efficiency versus Output Power --80 --90 --ALT2 in 1.28 MHz BW --3.2 MHz Offset +ALT2 in 1.28 MHz BW +3.2 MHz Offset --100 +ALT1 in 1.28 MHz BW +1.6 MHz Offset --ALT1 in 1.28 MHz BW --1.6 MHz Offset --130 Center 2.0175 GHz 1.5 MHz Span 15 MHz f, FREQUENCY (MHz) Figure 20. 3--Carrier TD--SCDMA Spectrum --110 --120 --ALT1 in 1.28 MHz BW --1.6 MHz Offset --130 Center 2.0175 GHz +ALT1 in 1.28 MHz BW +1.6 MHz Offset 2.5 MHz Span 25 MHz LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 18 3--Carrier TD--SCDMA VDD = 28 V, IDQ = 900 mA f = 2017.5 MHz f, FREQUENCY (MHz) Figure 21. 6--Carrier TD--SCDMA Spectrum MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 11 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 10 Ω f = 1950 MHz f = 2070 MHz Zload f = 1950 MHz LIFETIME BUY f = 2070 MHz Zsource VDD = 28 Vdc, IDQ = 900 mA f MHz Zsource Ω Zload Ω 1950 1.43 -- j4.56 3.61 -- j4.19 1960 1.57 -- j4.80 3.86 -- j4.40 1970 1.72 -- j5.12 4.18 -- j4.62 1980 1.65 -- j5.27 4.21 -- j4.81 1990 1.48 -- j4.98 3.91 -- j4.59 2000 1.38 -- j4.45 3.56 -- j4.07 2010 1.35 -- j4.01 3.31 -- j3.62 2020 1.30 -- j3.57 3.14 -- j3.40 2030 1.21 -- j3.62 2.99 -- j3.31 2040 1.25 -- j3.61 3.02 -- j3.31 2050 1.34 -- j3.76 3.19 -- j3.44 2060 1.37 -- j4.08 3.38 -- j3.75 2070 1.24 -- j4.24 3.33 -- j3.99 Zsource = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 22. Series Equivalent Source and Load Impedance — TD--SCDMA MRF6S21100NR1 MRF6S21100NBR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 13 MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 15 MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 17 MRF6S21100NR1 MRF6S21100NBR1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 2 Jan. 2007 LIFETIME BUY Revision Description • Added “TD--SCDMA” to data sheet description paragraph, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added VGG(Q) and removed Min and Max value for VGS(Q) in On Characteristics table to account for the test fixture’s resistor divider network, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added TD--SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance, p. 9--12 • Added Product Documentation and Revision History, p. 17 3 Dec. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Changed Storage Temperature Range in Max Ratings table from --65 to +175 to --65 to +150 for standardization across products, p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 • Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic, p. 3, 9 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant part numbers, p. 3, 9 • Corrected Fig. 15, Series Equivalent Source and Load Impedance’s Zsource and Zload copy to single--ended, p. 8 • Replaced Case Outline 1486--03, Issue C, with 1486--03, Issue D, p. 13--15. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484--04, Issue D, with 1484--04, Issue E, p. 16--18. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages MRF6S21100NR1 MRF6S21100NBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005--2008. All rights reserved. MRF6S21100NR1 MRF6S21100NBR1 Document Number: MRF6S21100N Rev. 3, 12/2008 20 RF Device Data Freescale Semiconductor