Freescale Semiconductor
Technical Data
Document Number: MRF6S21190H
Rev. 1, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21190HR3
MRF6S21190HSR3
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 54 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 29%
Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 175 Watts CW
Output Power
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Designed for Digital Predistortion Error Correction Systems
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2110 - 2170 MHz, 54 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S21190HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S21190HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
CW Operation @ TC = 25°C
Derate above 25°C
TJ
200
°C
CW
175
1
W
W/°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 85°C, 120 W CW
Case Temperature 83°C, 56 W CW
RθJC
0.29
0.30
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21190HR3 MRF6S21190HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 420 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.2 Adc)
VDS(on)
0.12
0.21
0.31
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.8
—
pF
Output Equivalent Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Cout
—
185
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
526
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 54 W Avg., f = 2112.5 MHz and f =
2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
14.5
16
17.5
dB
Drain Efficiency
ηD
26
29
—
%
PAR
5.5
6.1
—
dB
ACPR
—
- 38
- 35
dBc
IRL
—
- 13
-8
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 2110 - 2170 MHz Bandwidth
Video Bandwidth @ 175 W PEP Pout where IM3 = - 30 dBc
VBW
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
—
50
—
frequency - IMD3 @ 100 kHz