Freescale Semiconductor
Technical Data
Document Number: MRF6S23100H
Rev. 2, 12/2008
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S23100HR3
MRF6S23100HSR3
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA,
Pout = 20 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.4 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — -37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -40.5 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2300-2400 MHz, 20 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF6S23100HR3
CASE 465A-06, STYLE 1
NI-780S
MRF6S23100HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 20 W CW
°C/W
RθJC
0.53
0.59
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S23100HR3 MRF6S23100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
3A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 250 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test))
VGS(Q)
2
2.8
4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2.2 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg., f1 = 2390 MHz, f2 = 2400 MHz,
2- Carrier W- CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3
measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
14
15.4
17
dB
Drain Efficiency
ηD
22.5
23.5
—
%
Intermodulation Distortion
IM3
-35
-37
—
dBc
ACPR
-38
-40.5
—
dBc
IRL
—
-10
—
dB
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
MRF6S23100HR3 MRF6S23100HSR3
2
RF Device Data
Freescale Semiconductor
B1
VSUPPLY
R1
+
VBIAS
+
+
C6
C5
C8
C4
C3
Z11
RF
INPUT Z1
Z2
Z3
Z4
Z5
Z6
Z7
C9
C10
C11
C2
Z8
Z12
Z13
Z10
Z9
C1
Z14
C12
RF
OUTPUT
C7
DUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.725″ x 0.080″ Microstrip
0.240″ x 0.080″ Microstrip
0.110″ x 0.240″ Microstrip
0.140″ x 0.080″ Microstrip
0.167″ x 0.500″ Microstrip
0.130″ x 0.080″ Microstrip
0.250″ x 0.611″ Microstrip
0.060″ x 0.080″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.329″ x 0.756″ Microstrip
0.083″ x 0.756″ Microstrip
0.092″ x 0.800″ Microstrip
0.436″ x 0.800″ Microstrip
0.974″ x 0.080″ Microstrip
0.727″ x 0.080″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic
Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead, Surface Mount
2743019447
Fair-Rite
C1, C2, C7, C8
5.6 pF Chip Capacitors, B Case
ATC100B5R6CT500XT
ATC
C3
0.01 μF Chip Capacitor
C1825C103J1RAC
Kemet
C4, C9
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C5
22 μF, 25 V Tantalum Capacitor
T491D226K025AT
Kemet
C6
47 μF, 16 V Tantalum Capacitor
T491D476K016AT
Kemet
C10, C11
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C12
330 μF, 63 V Electrolytic Capacitor
EMVY630GTR331MMH0S
Nippon Chemi-Con
R1
10 Ω, 1/4 W Chip Resistor
CRC120610R0FKEA
Vishay
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
3
C4 C3
C2
C8
C9
C10
R1
B1
C6
C11
C5
C12
C7
CUT OUT AREA
C1
MRF6S23100 Rev 2.0
Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout
MRF6S23100HR3 MRF6S23100HSR3
4
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, Pout = 20 W (Avg.), IDQ = 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
15.8
24.8
24.2
Gps, POWER GAIN (dB)
15.6
15.4
23.6
Gps
3.84 MHz Channel Bandwidth
-35
PAR = 8.5 dB @ 0.01% Probability (CCDF)
IM3
-37
15.2
15
14.8
-39
IRL
ACPR
-41
14.6
-43
14.4
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
-12
-15
-18
-21
-24
IRL, INPUT RETURN LOSS (dB)
25.4
ηD
IM3 (dBc), ACPR (dBc)
16
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 20 Watts Avg.
35.5
35
34.5
Gps, POWER GAIN (dB)
15
14.9
14.8
34
35.5
Gps
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
14.7
-25
14.6
-27
IM3
14.5
-29
14.4
14.3
-31
ACPR
-33
IRL
14.2
-35
2300 2310 2320 2330 2340 2350 2360 2370 2380 2390 2400
-12
-14
-16
-18
-20
-22
IRL, INPUT RETURN LOSS (dB)
VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1000 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
ηD, DRAIN
EFFICIENCY (%)
15.1
ηD
IM3 (dBc), ACPR (dBc)
15.2
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 40 Watts Avg.
18
Gps, POWER GAIN (dB)
17
1250 mA
16
15
1000 mA
750 mA
14
13
12
0.1
500 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
0
VDD = 28 Vdc, f1 = 2345 MHz
f2 = 2355 MHz, Two-Tone Measurements
10 MHz Tone Spacing
IDQ = 1500 mA
-1 0
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
1500 mA
-3 0
IDQ = 500 mA
-4 0
1250 mA
-5 0
1000 mA
750 mA
-60
-70
1
10
100
300
0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
5
57
-1 0
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
-2 0
Pout, OUTPUT POWER (dBm)
3rd Order
-3 0
5th Order
-4 0
7th Order
-60
Ideal
55
P3dB = 51.88 dBm (154.14 W)
53
P1dB = 51.18 dBm (131.19 W)
Actual
51
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
49
47
0.1
10
1
100
32
33
34
35
36
37
38
39
40
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Figure 8. Pulsed CW Output Power versus
Input Power
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TWO-T ONE SPACING (MHz)
35
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 2345 MHz, f2 = 2355 MHz
2-Carrier W-CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
30
25
-20
ηD
TC = 25_C
IM3
-25
-30 _C
85_C -30
20
-35
Gps
25_C
25_C
-40
15
-30 _C
10
-45
85_C
5
-50
25_C
ACPR
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
-55
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
18
Gps
-30 _C
60
16
25_C
25_C 50
15
85_C
85_C
14
13
30
VDD = 28 Vdc
IDQ = 1000 mA
f = 2350 MHz
20
ηD
12
11
0.1
40
1
10
100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
IDQ = 1000 mA
f = 2350 MHz
15
Gps, POWER GAIN (dB)
TC = -30_C
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
16
70
14
13
28 V
12
VDD = 24 V
10
11
0
10
0
20
40
60
80
100
32 V
120
140
160
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain versus Output Power
MRF6S23100HR3 MRF6S23100HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS x AMPS2)
108
107
106
105
90
110
130
150
170
190
210
TJ, JUNCTION TEMPERATURE (°C)
230
250
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 20 W Avg., and ηD = 23.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
W-CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
-10
1
(dB)
PROBABILITY (%)
10
0.1
-20
-30
-40
0.01
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
-50
0.0001
0
2
4
6
-70
-ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
-IM3 in
3.84 MHz BW
-80
-25
-2 0
-60
8
10
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
-15
-10
-5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2‐Carrier W‐CDMA Spectrum
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
7
f = 2300 MHz
f = 2400 MHz
Zsource
Zload
f = 2400 MHz
f = 2300 MHz
Zo = 25 Ω
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 20 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2300
12.20 - j6.20
2.06 - j4.69
2310
12.06 - j6.40
2.04 - j4.62
2320
11.91 - j6.56
2.02 - j4.55
2330
11.76 - j6.71
2.01 - j4.48
2340
11.60 - j6.86
1.99 - j4.42
2350
11.44 - j7.00
1.97 - j4.35
2360
11.27 - j7.13
1.96 - j4.28
2370
11.10 - j7.22
1.94 - j4.22
2380
10.92 - j7.34
1.93 - j4.15
2390
10.73 - j7.46
1.91 - j4.09
2400
10.55 - j7.53
1.90 - j4.02
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23100HR3 MRF6S23100HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
B
M
H
C
F
E
T
A
SEATING
PLANE
A
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465-06
ISSUE G
NI-780
MRF6S23100HR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
K
(FLANGE)
D
bbb
M
T A
B
M
N
M
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
F
E
A
T
A
(FLANGE)
SEATING
PLANE
CASE 465A-06
ISSUE H
NI-780S
MRF6S23100HSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
--0.040
--0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
--1.02
--0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF6S23100HR3 MRF6S23100HSR3
RF Device Data
Freescale Semiconductor
9
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
• Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
• Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to show wider
dynamic range, p. 6
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 10
MRF6S23100HR3 MRF6S23100HSR3
10
RF Device Data
Freescale Semiconductor
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1-800-521-6274 or +1-480-768-2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1-800-441-2447 or +1-303-675-2140
Fax: +1-303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2005-2006, 2008. All rights reserved.
MRF6S23100HR3 MRF6S23100HSR3
Document
Number:
RF
Device
Data MRF6S23100H
Rev. 2, 12/2008
Freescale
Semiconductor
11
