Freescale Semiconductor
Technical Data
Document Number: MRF6S23140H
Rev. 2, 12/2008
RF Power Field Effect Transistors
MRF6S23140HR3
MRF6S23140HSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2300 to
2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C WLL applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1300 mA,
Pout = 28 Watts Avg., f = 2390 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 15.2 dB
Drain Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2390 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2300 - 2400 MHz, 28 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S23140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S23140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82°C, 140 W CW
Case Temperature 75°C, 28 W CW
RθJC
0.29
0.33
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Class
2 (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S23140HR3 MRF6S23140HSR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nΑdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.21
0.3
Vdc
Crss
—
2
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2 - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
15.2
17
dB
Drain Efficiency
ηD
23
25
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 37
- 35
dBc
ACPR
—
- 40
- 38
dBc
IRL
—
- 15
—
dB
1. Part internally matched both on input and output.
MRF6S23140HR3 MRF6S23140HSR3
2
RF Device Data
Freescale Semiconductor
VSUPPLY
+
VBIAS
+
+
C12
C11
C10
C5
Z11
C6
C9
C3
RF
INPUT
Z12
C17
C18
C19
C20
B1
R1
Z1
Z2
Z3
Z4
Z5
Z9
Z10
Z15
Z16
Z17
Z18
Z7
Z6
RF
OUTPUT
C2
Z13
C1
Z8
DUT
C4
Z14
C8
B2
+
+
C16
C15
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
+
C14
0.678″
0.420″
0.845″
0.175″
0.025″
0.514″
0.507″
0.097″
C13
x 0.068″
x 0.068″
x 0.200″
x 0.530″
x 0.530″
x 0.050″
x 0.050″
x 1.170″
C7
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z10
Z11, Z13
Z12, Z14
Z15
Z16
Z17
Z18
PCB
C21
C22
C23
C24
0.193″ x 1.170″ Microstrip
0.712″ x 0.095″ Microstrip
0.098″ x 0.095″ Microstrip
0.115″ x 0.550″ Microstrip
0.250″ x 0.110″ Microstrip
0.539″ x 0.068″ Microstrip
0.956″ x 0.068″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRF6S23140HR3(SR3) Test Circuit Schematic
Table 5. MRF6S23140HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
Ferrite Beads, Short
2743019447
Fair - Rite
C1, C2, C3, C4, C5, C6, C7, C8
5.6 pF Chip Capacitors
ATC100B5R6CT500XT
ATC
C9, C13
0.01 μF, 100 V Chip Capacitors
C1825C103J1RAC
Kemet
C10, C14, C17, C21
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C11, C15
22 μF, 25 V Tantalum Chip Capacitors
T491D226K025AT
Kemet
C12, C16
47 μF, 16 V Tantalum Chip Capacitors
T491D476K016AT
Kemet
C18, C19, C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C20, C24
330 μF, 63 V Electrolytic Capacitors
EMVY630GTR331MMH0S
Chemi - Con
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
3
C6
B1
R1
C19
C5
C20
C3
C12 C11
C17
C9*
C18
CUT OUT AREA
C10*
C1
C4
C2
MRF6S23140H
Rev 3
C21
C22
C24
C16
C7
B2
C15
C14*
C13*
C8
C23
* Stacked
Figure 2. MRF6S23140HR3(SR3) Test Circuit Component Layout
MRF6S23140HR3 MRF6S23140HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
28
26
15.4
VDD = 28 Vdc
15.3 Pout = 28 W (Avg.)
IDQ = 1300 mA, 2−Carrier W−CDMA
15.2 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
15.1
25
ηD
−34
−36
IM3
15
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
27
−38
IRL
ACPR −40
14.9
14.8
2270
2290
2310
2330
2350
2370
2390
−42
2430
2410
−6
−9
−12
−15
−18
IRL, INPUT RETURN LOSS (dB)
Gps
15.5
ηD, DRAIN
EFFICIENCY (%)
15.6
f, FREQUENCY (MHz)
15
37
14.9 VDD = 28 Vdc
Pout = 56 W (Avg.)
14.8 IDQ = 1300 mA, 2−Carrier W−CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
14.7 PAR = 8.5 dB @ 0.01% Probability (CCDF)
36
Gps
35
ηD
−25
−27
14.6
IM3
14.5
ACPR
14.4
14.3
2270
−29
IRL
2290
2310
2330
2350
2370
2390
2410
−31
−33
2430
−6
−9
−12
−15
−18
IRL, INPUT RETURN LOSS (dB)
38
ηD, DRAIN
EFFICIENCY (%)
15.1
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 56 Watts Avg.
−10
17
IDQ = 1950 mA
16
1625 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
Gps, POWER GAIN (dB)
18
1300 mA
15
975 mA
14
650 mA
13
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
12
11
1
10
100
VDD = 28 Vdc
f1 = 2345 MHz, f2 = 2355 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−30
IDQ = 650 mA
1950 mA
−40
1625 mA
−50
1300 mA
975 mA
−60
300
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
5
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 140 W (PEP)
IDQ = 1300 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2350 MHz
−10
−20
3rd Order
−30
5th Order
−40
7th Order
−50
−60
0.1
10
1
100
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
Pout, OUTPUT POWER (dBm)
Ideal
P6dB = 53.51 dBm (224.39 W)
59
P3dB = 53.04 dBm (201.42 W)
57
55
P1dB = 52.22 dBm (162.72 W)
53
Actual
51
49
VDD = 28 Vdc, IDQ = 1300 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2350 MHz
47
45
29
31
33
35
37
41
39
43
Pin, INPUT POWER (dBm)
42
36
30
24
18
VDD = 28 Vdc, IDQ = 1300 mA
f1 = 2345 MHz, f2 = 2355 MHz
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
ηD
TC = − 30_C Gps
12
−30_C
85_C
25_C
−25
−30
−35
−40
25_C
IM3
10
−45
−50
ACPR
1
−20
−30_C
85_C
6
0
0.5
25_C
85_C
−30_C
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 8. Pulsed CW Output Power versus
Input Power
100
−55
300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
MRF6S23140HR3 MRF6S23140HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
17
−30_C
85_C
25_C
15
40
85_C
30
14
VDD = 28 Vdc
IDQ = 1300 mA
f = 2350 MHz
13
20
ηD
12
IDQ = 1300 mA
f = 2350 MHz
0
0.5
1
10
100
14
13
VDD = 24 V 28 V
32 V
12
10
11
15
Gps, POWER GAIN (dB)
25_C 50
ηD, DRAIN EFFICIENCY (%)
TC = −30_C
16
Gps, POWER GAIN (dB)
16
60
Gps
11
0
300
50
100
150
200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus Output Power
Figure 11. Power Gain versus Output Power
250
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 28 W Avg., and ηD = 25%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF Factor versus Junction Temperature
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
−20
−30
−40
−50
−60
0.001
−70
0.0001
0
2
4
6
8
10
PEAK−TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25 −20
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S23140HR3 MRF6S23140HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 25 Ω
Zsource
f = 2300 MHz
f = 2400 MHz
f = 2300 MHz
Zload
f = 2400 MHz
VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg.
f
MHz
Zsource
W
Zload
W
2300
12.92 + j6.65
1.05 - j2.88
2310
13.06 + j6.73
1.04 - j2.82
2320
13.21 + j6.80
1.03 - j2.76
2330
13.37 + j6.87
1.01 - j2.70
2340
13.53 + j6.94
1.00 - j2.64
2350
13.70 + j7.01
0.99 - j2.58
2360
13.88 + j7.08
0.97 - j2.52
2370
14.06 + j7.14
0.96 - j2.46
2380
14.25 + j7.21
0.95 - j2.40
2390
14.45 + j7.27
0.94 - j2.34
2400
14.66 + j7.33
0.93 - j2.28
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
B
4
G
2X
1
Q
bbb
M
T A
B
M
M
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.16 (29.57) BASED ON M3 SCREW.
3
K
2
bbb
D
T A
M
B
M
M
M
bbb
M
T A
M
B
M
ccc
M
T A
M
B
M
N
R
(INSULATOR)
ccc
M
T A
M
aaa
M
T A
M
B
S
(LID)
B
(LID)
M
(INSULATOR)
M
H
C
F
E
T
A
A
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
CASE 465B - 03
ISSUE D
NI - 880
MRF6S23140HR3
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.44
5.21
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.175
0.205
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
M
T A
M
S
(LID)
aaa
M
B
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
SEATING
PLANE
(FLANGE)
CASE 465C - 02
ISSUE D
NI - 880S
MRF6S23140HSR3
MRF6S23140HR3 MRF6S23140HSR3
10
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Dec. 2008
Description
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality
is standard, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in
Functional Test”, On Characteristics table, p. 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 7
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added Product Documentation and Revision History, p. 11
MRF6S23140HR3 MRF6S23140HSR3
RF Device Data
Freescale Semiconductor
11
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MRF6S23140HR3 MRF6S23140HSR3
Document Number: MRF6S23140H
Rev. 2, 12/2008
12
RF Device Data
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