MRF6S24140HR5

Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large--signal output applications at 2450 MHz. Devices are suitable for use in industrial, medical and scientific applications.  Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1200 mA, Pout = 140 Watts Power Gain — 13.2 dB Drain Efficiency — 45%  Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 140 Watts CW Output Power Features  Characterized with Series Equivalent Large--Signal Impedance Parameters  Internally Matched for Ease of Use  Qualified Up to a Maximum of 32 VDD Operation  Integrated ESD Protection  In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2450 MHz, 140 W, 28 V CW LATERAL N--CHANNEL RF POWER MOSFETs CASE 465B--04 NI--880 MRF6S24140HR3 CASE 465C--03 NI--880S MRF6S24140HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 C TC 150 C TJ 225 C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 82C, 140 W CW Case Temperature 75C, 28 W CW RJC 0.29 0.33 Unit C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.  Freescale Semiconductor, Inc., 2007--2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6S24140HR3 MRF6S24140HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 500 nAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1300 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 2 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fifxture, 50 ohm system) VDD = 28 Vdc, IDQ = 1300 mA, Pout = 28 W Avg., f = 2390 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 15.2 17 dB Drain Efficiency D 23 25 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --40 --38 dBc IRL — --15 — dB Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S24140HR3 MRF6S24140HSR3 2 RF Device Data Freescale Semiconductor, Inc. VBIAS R1 C8 + + C10 C9 B1 VSUPPLY + C5 C7 C15 C16 C17 C18 Z14 C3 RF INPUT Z1 Z2 Z3 Z8 Z4 Z11 Z12 Z13 C2 Z15 C1 Z7 DUT + C4 C12 + + C14 C13 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z10 Z9 Z6 Z5 RF OUTPUT C6 C19 C20 C21 C22 B2 C11 0.678 x 0.068 Microstrip 0.466 x 0.068 Microstrip 0.785 x 0.200 Microstrip 0.200 x 0.530 Microstrip 0.025 x 0.530 Microstrip 0.178 x 0.050 Microstrip 0.097 x 1.170 Microstrip Z9 Z10 Z11 Z12 Z13 Z14, Z15 PCB 0.193 x 1.170 Microstrip 0.115 x 0.550 Microstrip 0.250 x 0.110 Microstrip 0.538 x 0.068 Microstrip 0.957 x 0.068 Microstrip 0.673 x 0.095 Microstrip Taconic RF--35, 0.030, r = 3.5 Figure 1. MRF6S24140HR3(SR3) Test Circuit Schematic — 2450 MHz Table 5. MRF6S24140HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 47 , 100 MHz Short Ferrite Beads, Surface Mount 2743019447 Fair--Rite C1, C2, C3, C4, C5, C6 5.6 pF Chip Capacitors ATC600B5R6BT500XT ATC C7, C11 0.01 F, 100 V Chip Capacitors C1825C103J1RAC Kemet C8, C12, C15, C19 2.2 F, 50 V Chip Capacitors C1825C225J5RAC Kemet C9, C13 22 F, 25 V Tantalum Capacitors T491D226M025AT Kemet C10, C14 47 F, 16 V Tantalum Capacitors T491D476K016AT Kemet C16, C17, C20, C21 10 F, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C18, C22 220 F, 50 V Electrolytic Capacitors 2222--150--95102 Vishay R1 240 , 1/4 W Chip Resistor CRC12062400FKEA Vishay MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor, Inc. 3 C17 C5 B1 + + + R1 C10 C9 C8* C15 C7* C18 C16 C3 C4 + + C13 C12* MRF6S24140H Rev. 1.0 C19 C20 + C14 C2 CUT OUT AREA C1 B2 C11* C6 C21 C22 * Stacked Figure 2. MRF6S24140HR3(SR3) Test Circuit Component Layout — 2450 MHz MRF6S24140HR3 MRF6S24140HSR3 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 2450 MHz 50 IDQ = 1200 mA f = 2450 MHz VDD = 28 V 32 V Gps, POWER GAIN (dB) 15 40 30 V Gps 14 30 20 13 32 V 12 D 28 V 11 10 1 10 D, DRAIN EFFICIENCY (%) 16 30 V 100 0 500 Pout, OUTPUT POWER (WATTS) CW Figure 3. Power Gain and Drain Efficiency versus CW Output Power as a Function of VDD 60 14.5 Gps 50 13.5 40 13 30 12.5 20 VDD = 32 V IDQ = 1200 mA f = 2450 MHz 12 D 10 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 14 0 11.5 10 1 100 Pout, OUTPUT POWER (WATTS) CW Figure 4. Power Gain and Drain Efficiency versus CW Output Power 15 Gps Gps, POWER GAIN (dB) 14 1000 mA 13 1200 mA 1400 mA 1100 mA 1300 mA 12 VDD = 28 V f = 2450 MHz 11 10 1 10 100 300 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Drain Efficiency versus CW Output Power as a Function of Total IDQ MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor, Inc. 5 f = 2450 MHz Zsource Zo = 10  Zload f = 2450 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 140 W CW f MHz Zsource  Zload  2450 4.55 + j4.9 1.64 -- j6.57 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 6. Series Equivalent Source and Load Impedance MRF6S24140HR3 MRF6S24140HSR3 6 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor, Inc. 7 MRF6S24140HR3 MRF6S24140HSR3 8 RF Device Data Freescale Semiconductor, Inc. MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor, Inc. 9 MRF6S24140HR3 MRF6S24140HSR3 10 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2007  Initial Release of Data Sheet 1 Apr. 2008  Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1  Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2  Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3 2 Feb. 2009 3 Mar. 2010  Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 2  Fig. 1, Test Circuit Schematic, Z--list, corrected PCB information to reflect Taconic as manufacturer, p. 3  Fig. 4, Power Gain and Drain Efficiency versus CW Output Power, corrected 28 V to read 32 V, p. 5  Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 8 4 Feb. 2012  Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2.  Fig. 6, MTTF versus Junction Temperature removed, p. 5. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools.  Replaced Case Outline 465B--03, Issue D, with 465B--04, Issue F, p. 1, 7--8. Deleted Style 1 pin note on Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in mm from 1.45--1.7 to 1.45--1.70, changed dimension K in mm from 4.44--5.21 to 4.45--5.21, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension Q in mm from 3--3.51 to 3.00--3.51, changed dimension R and S in mm from 13.1--13.3 to 13.08--13.34.  Replaced Case Outline 465C--02, Issue D, with 465C--03, Issue E, p. 1, 9--10. Deleted Style 1 pin note on Sheet 2. On Sheet 2, changed dimension B in mm from 13.6--13.8 to 13.59--13.84, changed dimension H in mm from 1.45--1.7 to 1.45--1.70, changed dimension M in mm from 22.15--22.55 to 22.15--22.56, changed dimension N in mm from 19.3--22.6 to 22.12--22.58, changed dimension R and S in mm from 13.1--13.3 to 13.08--13.34. MRF6S24140HR3 MRF6S24140HSR3 RF Device Data Freescale Semiconductor, Inc. 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2007--2010, 2012. All rights reserved. MRF6S24140HR3 MRF6S24140HSR3 Document Number: MRF6S24140H Rev. 4, 2/2012 12 RF Device Data Freescale Semiconductor, Inc.