MRF6S9160HSR5

Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20.9 dB Drain Efficiency — 30.5% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 76 Watts Avg., Full Frequency Band (865 - 895 MHz) Power Gain — 20 dB Drain Efficiency — 45% Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 2% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 160 Watts, Full Frequency Band (921 - 960 MHz) Power Gain — 20 dB Drain Efficiency — 58% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 160 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6S9160HSR3 Table 1. Maximum Ratings Symbol Value Unit Drain- Source Voltage Rating VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) ARCHIVE INFORMATION MRF6S9160HR3 MRF6S9160HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 160 W CW Case Temperature 73°C, 35 W CW RθJC 0.31 0.33 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6S9160HR3 MRF6S9160HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGS(Q) 2 3 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.2 0.3 Vdc Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 80.2 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 20 20.9 23 dB Drain Efficiency ηD 29 30.5 — % ACPR — - 46.8 - 45 dBc IRL — - 17 -9 dB Adjacent Channel Power Ratio Input Return Loss Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 76 W Avg., 865 MHz