Document Number: MRF6V10250HS
Rev. 2, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF6V10250HSR3
LIFETIME BUY
RF Power transistor designed for applications operating at frequencies
between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for
use in pulsed applications.
• Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA,
Pout = 250 Watts Peak (25 W Avg.), f = 1090 MHz, Pulse Width = 100 μsec,
Duty Cycle = 10%
Power Gain — 21 dB
Drain Efficiency — 60%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak
Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1090 MHz, 250 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 465A--06, STYLE 1
NI--780S
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +100
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
ZθJC
0.10
°C/W
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 250 W Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor
Technical Data
MRF6V10250HSR3
1
Table 3. ESD Protection Characteristics
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
500
nAdc
100
—
—
Vdc
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mA)
V(BR)DSS
IDSS
—
—
50
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 90 Vdc, VGS = 0 Vdc)
IDSS
—
—
2
mA
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 528 μAdc)
VGS(th)
1
1.8
3
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 250 mAdc, Measured in Functional Test)
VGS(Q)
2
2.4
3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.32 Adc)
VDS(on)
—
0.25
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.8
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
340
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
280
—
pF
LIFETIME BUY
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak (25 W Avg.), f = 1090 MHz,
Pulsed, 100 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19
21
23
dB
Drain Efficiency
ηD
55
60
—
%
Input Return Loss
IRL
—
--12
--9
dB
1. Part internally matched both on input and output.
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Test Methodology
MRF6V10250HSR3
2
RF Device Data
Freescale Semiconductor
C12
VBIAS
C15
+
C13
C14
L1
L2
C6
R1
RF
INPUT
Z1
Z2
Z3
Z6
Z4
Z7
Z8
C8
C2
LIFETIME BUY
Z1
Z2*, Z9*
Z3*, Z8*
Z4, Z7
C3
C4
C5
0.40″ x 0.080″ Microstrip
1.29″ x 0.080″ Microstrip
0.22″ x 0.480″ Microstrip
0.22″ x 0.625″ x 0.220″ Taper
Z10
C10
Z5
C1
Z9
RF
OUTPUT
C9
C11
DUT
Z5, Z6
Z10
PCB
0.625″ x 0.300″ Microstrip
0.430″ x 0.080″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55
* Line length includes microstrip bends
Figure 1. MRF6V10250HSR3 Test Circuit Schematic
Table 5. MRF6V10250HSR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
240 pF Chip Capacitor
ATC100B241JT500XT
ATC
C2, C9, C11
1.8 pF Chip Capacitors
ATC100B1R8CT500XT
ATC
C3
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C4, C5
5.1 pF Chip Capacitors
ATC100B5R1CT500XT
ATC
C6, C10, C12
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C7, C15
2.2 μF, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C8
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C13, C14
470 μF, 63 V Electrolytic Capacitors
EKME633ELL471MK25S
Multicomp
L1
5 nH, 2 Turn Inductor
A02TKLC
Coilcraft
L2
7 nH, Hand Wound
2T, 18awg
Freescale
R1
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
R2
20 Ω, 1 W Chip Resistor
CRCW251220R0FKEA
Vishay
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C7
R2
VSUPPLY
+
MRF6V10250HSR3
RF Device Data
Freescale Semiconductor
3
R2
C6
C13
C14
C15
L1
C12
R1
C1
C10
C5
C3
LIFETIME BUY
C4
C8
C9
CUT OUT AREA
C2
L2
MRF6V10250H Rev. 3
Figure 2. MRF6V10250HSR3 Test Circuit Component Layout
C11
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
C7
MRF6V10250HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Ciss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
10
Crss
1
0
10
TJ = 175°C
TJ = 200°C
TC = 25°C
20
30
40
100
10
1
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
Figure 4. DC Safe Operating Area
24
58
22
60
Gps
20
50
ηD
40
18
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
16
50
Pout, OUTPUT POWER (dBm) PULSED
70
ηD, DRAIN EFFICIENCY (%)
30
100
21
56
300
P3dB = 54.94 dBm (311 W)
Ideal
P1dB = 54.55 dBm (285 W)
55
Actual
54
53
52
51
50
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
49
28
30
32
34
36
Pout, OUTPUT POWER (WATTS) PULSED
Pin, INPUT POWER (dBm) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
Figure 6. Pulsed Output Power versus
Input Power
38
22
23
22
57
48
26
400
IDQ = 1 A
21
750 mA
500 mA
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
LIFETIME BUY
TJ = 150°C
1
0.1
Gps, POWER GAIN (dB)
10
250 mA
20
19
VDD = 50 Vdc, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
18
100
19
400
45 V
18
16
14
50
50 V
40 V
17
15
17
50
20
35 V
VDD = 30 V
IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
100
400
Pout, OUTPUT POWER (WATTS) PULSED
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
Figure 8. Pulsed Power Gain versus
Output Power
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
50
Coss
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
MRF6V10250HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
24
85_C
200
VDD = 50 Vdc
IDQ = 250 mA
f = 1090 MHz
Pulse Width = 100 μsec
Duty Cycle = 10%
100
0
2
1
5
4
3
6
20
50
85_C
55_C
ηD
40
18
VDD = 50 Vdc, IDQ = 250 mA, f = 1090 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
100
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
107
106
105
104
103
110
30
400
Pout, OUTPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
MTTF (HOURS)
LIFETIME BUY
Pin, INPUT POWER (WATTS) PULSED
90
60
25_C
18
50
0
Gps
TC = --30_C
22
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 250 W Peak, Pulse Width = 100 μsec,
Duty Cycle = 10%, and ηD = 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
ηD DRAIN EFFICIENCY (%)
25_C
300
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
70
TC = --30_C
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PULSED
400
MRF6V10250HSR3
6
RF Device Data
Freescale Semiconductor
Zload
f = 978 MHz
f = 978 MHz
Zsource
LIFETIME BUY
f = 1090 MHz
f = 1090 MHz
VDD = 50 Vdc, IDQ = 250 mA, Pout = 250 W Peak
f
MHz
Zsource
Ω
Zload
Ω
978
1.67 -- j2.04
4.3 -- j2.72
1030
2.39 -- j2.23
5.66 -- j2.42
1090
3.26 -- j3.72
5.85 -- j2.39
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Zo = 10 Ω
MRF6V10250HSR3
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
M
T A
R
M
B
M
ccc
M
T A
M
M
B
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
-----0.040
-----0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
-----1.02
-----0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
(FLANGE)
CASE 465A--06
ISSUE H
NI--780S
MRF6V10250HSR3
8
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
LIFETIME BUY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2008
• Initial Release of Data Sheet
1
June 2008
• Added 25 W Avg. to Typical Pulsed Performance bullet, p. 1
• Added Pulsed to Fig. 6, Pulsed Output Power versus Input Power Y axis label to better clarify
performance, p. 5
• Corrected Fig. 9 title to read: Pulsed Output Power versus Input Power, p. 6
2
Apr. 2010
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
• Reporting of pulsed thermal data now shown using the ZθJC symbol, p. 1
• Added Electromigration MTTF Calculator availability to Product Software, p. 9
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
MRF6V10250HSR3
RF Device Data
Freescale Semiconductor
9
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© Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.
MRF6V10250HSR3
Document Number: MRF6V10250HS
Rev. 2, 4/2010
10
RF Device Data
Freescale Semiconductor
