NXP Semiconductors
Technical Data
RF Power Field Effect Transistors
Document Number: MRF6V2010N
Rev. 6, 9/2016
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W
Power gain — 23.9 dB
Drain efficiency — 62%
Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW
output power
Features
Characterized with series equivalent large--signal impedance parameters
Qualified up to a maximum of 50 VDD operation
Integrated ESD protection
225C capable plastic package
MRF6V2010N
MRF6V2010NB
MRF6V2010GN
10--450 MHz, 10 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
TO--270--2
PLASTIC
MRF6V2010N
TO--272--2
PLASTIC
MRF6V2010NB
TO--270G--2
PLASTIC
MRF6V2010GN
Gate 2
1 Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2007–2008, 2010, 2016 NXP B.V.
RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--0.5, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
TC
150
C
TJ
225
C
Symbol
Value (2,3)
Unit
RJC
3.0
C/W
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81C, 10 W CW
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
Adc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
50
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
2.5
mA
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 28 Adc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 30 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.68
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 70 mAdc)
VDS(on)
—
0.26
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.13
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
7.3
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
16.3
—
pF
Characteristic
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 5 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W, f = 220 MHz, CW
Power Gain
Gps
22.5
23.9
25.5
dB
Drain Efficiency
D
58
62
—
%
Input Return Loss
IRL
—
--14
--9
dB
Table 6. Ordering Information
Device
Tape and Reel Information
Package
MRF6V2010NR1
R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel
TO--270--2
MRF6V2010NBR1
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
TO--272--2
MRF6V2010GNR1
R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel
TO--270G--2
ATTENTION: The MRF6V2010N, MRF6V2010NB and MRF6V2010GN are high power devices and special
considerations must be followed in board design and mounting. Incorrect mounting can lead to internal
temperatures which exceed the maximum allowable operating junction temperature. Refer to NXP Application
Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING
SYSTEM DESIGN to ensure proper mounting of these devices.
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
3
B2
L2
B1
VBIAS
+
+
C2
C3
+
C11
C4
C5
C6
C7
C12
C13 C14
C15
VSUPPLY
C16
C8
L3
R1
RF
INPUT
Z1
Z2
L1
Z3
Z5
Z6
Z8
Z9
Z10
C1
Z11
C18
Z4
C9
Z1
Z2
Z3
Z4
Z5
Z6
Z7
RF
OUTPUT
C10
C17
DUT
0.235 x 0.082 Microstrip
1.190 x 0.082 Microstrip
0.619 x 0.082 Microstrip
0.190 x 0.270 Microstrip
0.293 x 0.270 Microstrip
0.120 x 0.270 Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.062 x 0.270 Microstrip
0.198 x 0.082 Microstrip
5.600 x 0.082 Microstrip
0.442 x 0.082 Microstrip
0.341 x 0.082 Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
Figure 2. MRF6V2010N(NB) Test Circuit Schematic
Table 7. MRF6V2010N(NB) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
95 , 100 MHz Long Ferrite Beads
2743021447
Fair--Rite
C1, C8, C11, C18
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C3
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C4, C13
39 K pF Chip Capacitors
ATC200B393KT50XT
ATC
C5, C14
22 K pF Chip Capacitors
ATC200B223KT50XT
ATC
C6, C15
0.1 F Chip Capacitors
CDR33BX104AKYS
Kemet
C7, C12
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C9
0.6--4.5 pF Variable Capacitor, Gigatrim
27271SL
Johanson
C10
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C16
470 F, 63 V Electrolytic Capacitor
ESMG630ELL471MK205
United Chemi--Con
C17
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
L1
17.5 nH Inductor
B06T
CoilCraft
L2, L3
82 nH Inductors
1812SMS--82NJ
CoilCraft
R1
120 , 1/4 W Chip Resistor
CRCW1206120RFKEA
Vishay
MRF6V2010N MRF6V2010NB MRF6V2010GN
4
RF Device Data
NXP Semiconductors
C14
C5
C13
C6
C4
C7
C3
B2
L2
B1
C2
C15
R1
C12
C11
C8
L3
CUT OUT AREA
L1
C1
C16
C17
C18
C10
C9
MRF6V2010N/NB
Rev. 3
Figure 3. MRF6V2010N(NB) Test Circuit Component Layout
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
5
TYPICAL CHARACTERISTICS
100
100
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
Ciss
10
Coss
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
1
10
1
Crss
0
10
20
40
30
10
1
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
0.35
25
0.3
24
0.2
2.75 V
0.15
2.63 V
2.5 V
0.1
0.05
IMD, THIRD ORDER INTERMODULATION
DISTORTION (dBc)
0
Gps, POWER GAIN (dB)
VGS = 3 V
0.25
0
20
40
60
80
100
100
200
10
20
IDQ = 45 mA
38 mA
23
30 mA
22
23 mA
21
20 15 mA
VDD = 50 Vdc
f1 = 220 MHz
19
2.25 V
18
120
0.1
1
DRAIN VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS) CW
Figure 6. DC Drain Current versus Drain Voltage
Figure 7. CW Power Gain versus Output Power
--20
15 mA
--25
23 mA
--30
47
Pout, OUTPUT POWER (dBm)
ID, DRAIN CURRENT (AMPS)
TC = 25C
0.1
0.1
30 mA
--35
38 mA
--40
45 mA
--45
--50
IDQ = 60 mA
--55
VDD = 50 Vdc
f1 = 220 MHz, f2 = 220.1 MHz
Two--Tone Measurements
100 kHz Tone Spacing
1
10
20
Ideal
45
P3dB = 40.87 dBm (12.2 W)
43
P1dB = 40.43 dBm (11.04 W)
41
Actual
39
37
13
VDD = 50 Vdc, IDQ = 30 mA
f = 220 MHz
15
17
19
21
23
Pout, OUTPUT POWER (WATTS) PEP
Pin, INPUT POWER (dBm)
Figure 8. Third Order Intermodulation Distortion
versus Output Power
Figure 9. CW Output Power versus Input Power
MRF6V2010N MRF6V2010NB MRF6V2010GN
6
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS
45
26
TC = --30_C
Pout, OUTPUT POWER (dBm)
22
20
18
45 V
16
40 V
35 V
30 V
14
25 V
12
10
50 V
IDQ = 30 mA
f = 220 MHz
VDD = 20 V
0
2
40
85_C
25_C
35
30
VDD = 50 Vdc
IDQ = 30 mA
f = 220 MHz
25
20
4
6
8
10
12
0
14
10
5
20
15
25
Pout, OUTPUT POWER (WATTS) CW
Pin, INPUT POWER (dBm)
Figure 10. Power Gain versus Output Power
Figure 11. Power Output versus Power Input
26
25
Gps, POWER GAIN (dB)
25_C
--30_C
63
Gps
24
85_C
TC = --30_C
23
72
54
45
22
36
21
D
25_C
85_C
20
27
18
VDD = 50 Vdc
IDQ = 30 mA
f = 220 MHz
19
18
0.1
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
24
9
0
1
10
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency versus CW Output Power
Gps @ 220 MHz
25
70
D @ 130 MHz
60
50
24
D @ 64 MHz
23
40
D @ 220 MHz
22
30
D @ 450 MHz
20
21
20
VDD = 50 Vdc
IDQ = 30 mA
Gps @ 450 MHz
0
2
4
6
8
107
106
10
19
0
MTTF (HOURS)
Gps, POWER GAIN (dB)
26
108
80
Gps @ 64 MHz
Gps @ 130 MHz
D, DRAIN EFFICIENCY (%)
27
10
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain and Drain Efficiency
versus CW Output Power
12
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 50 Vdc, Pout = 10 W CW, and D = 62%.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Figure 14. MTTF versus Junction Temperature
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
7
Zo = 50
Zsource
f = 220 MHz
f = 220 MHz
Zload
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW
f
MHz
Zsource
Zload
220
20 + j25
75 + j44
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6V2010N MRF6V2010NB MRF6V2010GN
8
RF Device Data
NXP Semiconductors
C10 C9
C8
C14
C6
C7
C16
B2
C15
L5
B1
C5
C13
C4
L1
R1
L2
C2
C3
CUT OUT AREA
C1
C17
C18
L3
C19
L4
C11
C12
130 MHz
Rev. 1
Figure 16. MRF6V2010N(NB) Test Circuit Component Layout — 130 MHz
Table 8. MRF6V2010N(NB) Test Circuit Component Designations and Values — 130 MHz
Part
Description
Part Number
Manufacturer
B1, B2
95 , 100 MHz Long Ferrite Beads, Surface Mount
2743021447
Fair--Rite
C1, C5, C18, C19
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2, C12
0.6--4.5 pF Variable Capacitors, Gigatrim
27271SL
Johanson
C3
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C4, C13
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6, C14
0.1 F, 50 V Chip Capacitors
CDR33BX104AKYM
Kemet
C7, C15
22K pF Chip Capacitors
ATC200B223KT50XT
ATC
C8, C16
39K pF Chip Capacitors
ATC200B393KT50XT
ATC
C9
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C10
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C11
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C17
330 F, 63 V Electrolytic Capacitor
MCRH63V337M13X21--RH
Multicomp
L1
17.5 nH Inductor
B06T
CoilCraft
L2, L5
82 nH Inductors
1812SMS--82NJ
CoilCraft
L3
35.5 nH Inductor
B09T
CoilCraft
L4
43 nH Inductor
B10T
CoilCraft
R1
100 , 1/4 W Chip Resistor
CRCW1206100RFKEA
Vishay
PCB
PCB Material 0.030”
CuClad 250GX--0300--55--22,
0.030, r = 2.55
Arlon
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
9
C10 C9
C8
C16
C6
C7
L4
C4
L1
C2
C11
C5
R1
C19
L2
L3
C12
CUT OUT AREA
C20
C1
B2
C17
B1
C3
C18
C15
C13
C14
450 MHz
Rev. 1
Figure 17. MRF6V2010N(NB) Test Circuit Component Layout — 450 MHz
Table 9. MRF6V2010N(NB) Test Circuit Component Designations and Values — 450 MHz
Part
Description
Part Number
Manufacturer
B1, B2
95 , 100 MHz Long Ferrite Beads, Surface Mount
2743021447
Fair--Rite
C1, C5, C12, C15
240 pF Chip Capacitors
ATC100B241JT200XT
ATC
C2, C3
10 pF Chip Capacitors
ATC100B100JT500XT
ATC
C4, C11
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6, C16
0.1 uF 50V Chip Capacitors
CDR33BX104AKYM
Kemet
C7, C17
22K pF Chip Capacitors
ATC200B223KT50XT
ATC
C8, C18
39K pF Chip Capacitors
ATC200B393KT50XT
ATC
C9
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C10
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C13, C14
6.2 pF Chip Capacitors
ATC100B6R2BT500XT
ATC
C19
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
C20
47 F, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
L1
17.5 nH Inductor
B06T
CoilCraft
L2, L4
82 nH Inductors
1812SMS--82NJ
CoilCraft
L3
5.0 nH Inductor
A02T
CoilCraft
R1
120 , 1/4 W Chip Resistor
CRCW1206120RFKEA
Vishay
PCB
PCB Material 0.030”
CuClad 250GX--0300--55--22,
0.030, r = 2.55
Arlon
MRF6V2010N MRF6V2010NB MRF6V2010GN
10
RF Device Data
NXP Semiconductors
C11 C10
C9
C18
C7
C8
C20
L6
B1
C6
C5
C4
C16
C1
R1
L3
C2 C3
C21
C17
L2
CUT OUT AREA
L1
B2
C19
L4
C15
L5
C14
C12 C13
64 MHz
Rev. 1
Figure 18. MRF6V2010N(NB) Test Circuit Component Layout — 64 MHz
Table 10. MRF6V2010N(NB) Test Circuit Component Designations and Values — 64 MHz
Part
Description
Part Number
Manufacturer
B1, B2
95 100 MHz Long Ferrite Beads, Surface Mount
2743021447
Fair--Rite
C1, C5, C15, C17
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C2
91 pF Chip Capacitor
ATC100B910JT500XT
ATC
C3, C14
22 pF Chip Capacitors
ATC100B220JT500XT
ATC
C4, C16
2.2 F, 50 V Chip Capacitors
C1825C225J5RAC
Kemet
C6
220 nF, 50 V Chip Capacitor
C1812C224J5RAC
Kemet
C7, C18
0.1 F, 50 V Chip Capacitors
CDR33BX104AKYM
Kemet
C8, C19
100K pF Chip Capacitors
ATC200B104KT50XT
ATC
C9, C20
22K pF Chip Capacitors
ATC200B223KT50XT
ATC
C10
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C11
10 F, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C12
68 pF Chip Capacitor
ATC100B680JT500XT
ATC
C13
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C21
330 F, 63 V Electrolytic Capacitor
MCRH63V337M13X21--RH
Multicomp
L1
17.5 nH Inductor
B06T
CoilCraft
L2
43 nH Inductor
B10T
CoilCraft
L3, L4, L5, L6
82 nH Inductors
1812SMS--82NJ
CoilCraft
R1
180 , 1/4 W Chip Resistor
CRCW1206180RFKEA
Vishay
PCB
PCB Material 0.030
CuClad 250GX--0300--55--22,
0.030, r = 2.55
Arlon
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
11
Zo = 50
f = 450 MHz Zsource
f = 450 MHz Zload
f = 220 MHz Zsource
f = 130 MHz Zsource
f = 220 MHz Zload
f = 64 MHz Zsource
f = 130 MHz Zload
f = 64 MHz Zload
VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W CW
f
MHz
Zsource
Zload
64
37.5 + j15.1
94.5 + j16.7
130
26.7 + j21.3
83.8 + j35.0
220
20.0 + j25.4
75.0 + j44.0
450
7.70 + j21.0
43.0 + j49.0
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 19. Series Equivalent Source and Load Impedance
MRF6V2010N MRF6V2010NB MRF6V2010GN
12
RF Device Data
NXP Semiconductors
50 OHM TYPICAL CHARACTERISTICS
Table 11. Common Source S--Parameters (VDD = 50 V, IDQ = 30 mA, TA = 25C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
|S21|
|S12|
|S22|
10
0.997
--5.0
11.520
175.6
0.000790
84.6
0.960
--0.8
20
0.994
--9.5
11.419
171.6
0.00157
84.3
0.962
--3.5
30
0.992
--14.5
11.356
167.9
0.00232
78.1
0.963
--5.5
40
0.987
--19.3
11.278
164.1
0.00307
74.6
0.964
--7.7
50
0.981
--24.0
11.187
160.1
0.00380
71.0
0.964
--9.9
60
0.974
--28.6
11.042
156.1
0.00449
67.4
0.963
--12.1
70
0.965
--33.0
10.848
152.1
0.00513
63.8
0.961
--14.2
80
0.955
--37.4
10.636
148.2
0.00574
60.4
0.958
--16.3
90
0.944
--41.6
10.405
144.5
0.00631
57.0
0.955
--18.4
100
0.933
--45.7
10.147
140.8
0.00683
53.8
0.951
--20.4
120
0.912
--53.3
9.603
134.2
0.00776
47.9
0.944
--24.2
140
0.892
--60.4
9.061
127.9
0.00851
42.4
0.936
--27.9
160
0.873
--66.7
8.516
122.2
0.00914
37.6
0.929
--31.3
180
0.856
--72.7
7.993
116.9
0.00967
32.9
0.923
--34.6
200
0.841
--78.1
7.497
112.1
0.0101
28.7
0.918
--37.9
220
0.828
--83.0
7.040
107.5
0.0104
24.9
0.914
--41.1
240
0.819
--87.5
6.612
103.3
0.0107
21.3
0.912
--44.2
260
0.810
--91.7
6.214
99.3
0.0109
18.0
0.909
--47.2
280
0.804
--95.5
5.845
95.7
0.0110
15.0
0.908
--50.2
300
0.799
--99.0
5.507
92.2
0.0112
11.9
0.907
--53.0
320
0.796
--102.2
5.192
88.8
0.0112
9.1
0.906
--55.9
340
0.794
--105.1
4.901
85.7
0.0113
6.5
0.906
--58.6
360
0.793
--107.8
4.630
82.8
0.0112
4.1
0.906
--61.4
380
0.793
--110.4
4.382
79.9
0.0112
2.0
0.906
--64.1
400
0.794
--112.7
4.152
77.2
0.0112
--0.3
0.906
--66.7
420
0.796
--114.9
3.937
74.6
0.0112
--2.5
0.907
--69.3
440
0.798
--116.9
3.733
72.2
0.0111
--4.4
0.907
--71.8
460
0.800
--118.8
3.547
69.8
0.0110
--6.5
0.908
--74.2
480
0.803
--120.5
3.372
67.6
0.0109
--8.5
0.908
--76.7
500
0.807
--122.2
3.213
65.4
0.0108
--10.0
0.909
--79.0
520
0.810
--123.8
3.061
63.3
0.0107
--11.9
0.910
--81.3
540
0.814
--125.4
2.919
61.2
0.0105
--13.5
0.911
--83.6
560
0.817
--126.8
2.784
59.3
0.0104
--14.9
0.912
--85.8
580
0.821
--128.1
2.661
57.5
0.0103
--16.6
0.914
--87.9
600
0.825
--129.3
2.545
55.7
0.0101
--18.1
0.915
--90.0
620
0.829
--130.5
2.436
53.9
0.00996
--19.6
0.917
--92.1
640
0.833
--131.6
2.334
52.2
0.00981
--21.0
0.918
--94.1
660
0.837
--132.7
2.237
50.5
0.00963
--22.4
0.920
--96.0
680
0.840
--133.8
2.144
48.9
0.00946
--23.7
0.921
--97.9
700
0.843
--134.8
2.058
47.3
0.00928
--25.0
0.923
--99.7
720
0.847
--135.8
1.977
45.8
0.00910
--26.1
0.924
--101.4
740
0.850
--136.8
1.900
44.4
0.00894
--27.3
0.926
--103.0
760
0.854
--137.8
1.828
43.0
0.00876
--28.6
0.928
--104.7
780
0.857
--138.7
1.760
41.6
0.00859
--29.7
0.930
--106.2
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
13
50 OHM TYPICAL CHARACTERISTICS
Table 10. Common Source S--Parameters (VDD = 50 V, IDQ = 30 mA, TA = 25C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
|S21|
|S12|
|S22|
800
0.858
--139.7
1.697
40.2
0.00839
--31.1
0.932
--107.6
820
0.861
--140.7
1.636
38.9
0.00818
--32.1
0.934
--109.0
840
0.864
--141.6
1.578
37.6
0.00798
--33.1
0.935
--110.4
860
0.867
--142.6
1.523
36.4
0.00781
--33.8
0.936
--111.7
880
0.870
--143.5
1.471
35.1
0.00763
--34.8
0.938
--112.9
900
0.873
--144.5
1.421
33.9
0.00745
--35.9
0.939
--114.1
MRF6V2010N MRF6V2010NB MRF6V2010GN
14
RF Device Data
NXP Semiconductors
PACKAGE DIMENSIONS
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
15
MRF6V2010N MRF6V2010NB MRF6V2010GN
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RF Device Data
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MRF6V2010N MRF6V2010NB MRF6V2010GN
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NXP Semiconductors
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MRF6V2010N MRF6V2010NB MRF6V2010GN
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RF Device Data
NXP Semiconductors
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MRF6V2010N MRF6V2010NB MRF6V2010GN
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RF Device Data
NXP Semiconductors
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
23
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Feb. 2007
Initial release of data sheet
1
May 2007
Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C1,
C8, C11, C18, C4, C13, C5, and C14, p. 3
Corrected Series Impedance Zsource and Zload values, Fig. 13, Series Equivalent Source and Load
Impedance, p. 7
2
Aug. 2007
Replaced Case Outline 1265--08 with 1265--09, Issue K, p. 1, 12--14. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min--Max .290--.320 to .290 Min; E3 changed from Min--Max .150--.180 to .150 Min). Added JEDEC
Standard Package Number.
Replaced Case Outline 1337--03 with 1337--04, p. 1, 15--17. Issue D: Removed Drain--ID label from View
Y--Y on Sheet 2. Renamed E2 to E3. Added cross--hatch region dimensions D2 and E2.
Corrected Test Circuit Component part number in Table 6, Component Designations and Values for R1, p. 3
Added Figure 12, Power Gain and Drain Efficiency versus CW Output Power, p. 6
Corrected plot points to show 50 Ohms in Figure 14, Series Equivalent Source and Load Impedance, p. 7
Added Figures 15--17, Test Circuit Component Layout and Tables 7--9, Test Circuit Component
Designations and Values to show 130, 450 and 64 MHz, respectively, p. 8--10
Added Figure 18, Series Equivalent Source and Load Impedance to show 64, 130, 220 and 450 MHz plot
points, p. 11
3
Feb. 2008
Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1
Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection,
Dynamic Characteristics table, p. 2
Replaced Case Outline 1337--04, Issue D, with 1337--04, Issue E, p. 15--17. Corrected document number
98ASA99191D on Sheet 3.
4
Mar. 2008
Corrected Zsource (37.5 + j15.1) and Zload (94.5 + j16.7) 64 MHz values and replotted both, p. 11
Added S--Parameter table, p. 12, 13
(continued)
MRF6V2010N MRF6V2010NB MRF6V2010GN
24
RF Device Data
NXP Semiconductors
REVISION HISTORY (continued)
Revision
Date
5
Apr. 2010
Description
Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C
in Capable Plastic Package bullet, p. 1
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 20
6
Sept. 2016
Added part number MRF6V2010GN, pp. 1, 3
Added TO--270G--2 package isometric, p. 1, and Mechanical Outline, pp. 21--23
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production.
ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD
sensitive devices, p. 2
Fig. 14, MTTF versus Junction Temperature: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 7
Replaced Case Outline TO--270--2, Issue K (Case 1265--09), with TO--270--2, Issue R, pp. 15--17.
Issue P: changed dimension A to AA and D to DD on Sheets 1 and 3. Added tolerance bbb and feature
control frame to dimensions E and E5. Issue R: incorporated NXP logo.
MRF6V2010N MRF6V2010NB MRF6V2010GN
RF Device Data
NXP Semiconductors
25
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implementers to use NXP products. There are no express or implied copyright licenses
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E 2007–2008, 2010, 2016 NXP B.V.
MRF6V2010N MRF6V2010NB MRF6V2010GN
Document Number: MRF6V2010N
Rev. 6, 9/2016
26
RF Device Data
NXP Semiconductors