Freescale Semiconductor
Technical Data
Document Number: MRF6V3090N
Rev. 2, 10/2015
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadcast and commercial aerospace broadband applications
with frequencies from 470 to 1215 MHz.
Typical Performance (UHF 470--860 Reference Circuit): VDD = 50 Volts,
IDQ = 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
18 Avg.
470
21.6
26.8
8.6
--31.8
650
22.9
28.0
8.7
--34.4
860
21.9
28.3
7.9
--29.2
Typical Performance (L--Band 960--1215 MHz Reference Circuit):
VDD = 50 Volts, IDQ = 100 mA.
Signal Type
Pulse
(128 sec, 10% Duty
Cycle)
Pout
(W)
f
(MHz)
Pin
(W)
Gps
(dB)
D
(%)
90 Peak
960
1.3
18.4
55.3
1030
1.41
18
56.9
1090
1.65
17.4
50.7
1215
1.68
17.3
51.0
Features
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Excellent Thermal Stability
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
MRF6V3090N
MRF6V3090NB
470--1215 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
TO--270WB--4
PLASTIC
MRF6V3090N
TO--272WB--4
PLASTIC
MRF6V3090NB
PARTS ARE SINGLE--ENDED
Gate
Drain
Gate
Drain
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2010--2011, 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090N MRF6V3090NB
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
C
Case Operating Temperature
TC
150
C
TJ
225
C
Symbol
Value (2,3)
Unit
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 76C, 18 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
Case Temperature 80C, 90 W CW, 50 Vdc, IDQ = 350 mA, 860 MHz
RJC
C/W
0.79
0.82
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (2001--4000 V)
Machine Model (per EIA/JESD22--A115)
B (201--400 V)
Charge Device Model (per JESD22--C101)
IV (>1000 V)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
0.5
Adc
V(BR)DSS
115
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
20
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 Adc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage
(VDD = 50 Vdc, ID = 350 mAdc, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
—
0.2
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
41
—
pF
Output Capacitance
(VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
65.4
—
pF
Input Capacitance (4)
(VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
591
—
pF
Characteristic
Off Characteristics
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 50 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Part internally input matched.
(continued)
MRF6V3090N MRF6V3090NB
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale DVB--T Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Avg.,
f = 860 MHz, DVB--T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ 4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.0
22.0
24.0
dB
Drain Efficiency
D
27.5
28.5
—
%
ACPR
—
--62.0
--60.0
dBc
IRL
—
--14
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Table 6. Ordering Information
Device
MRF6V3090NR1
MRF6V3090NBR1
MRF6V3090NR5
MRF6V3090NBR5
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
Package
TO--270WB--4
TO--272WB--4
TO--270WB--4
TO--272WB--4
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
3
VBIAS
C8
+
C1
R1
C2
Z2
Z3
Z4
Z5
Z6
Z9
Z12
Z13
Z14
Z15 Z16
Z17
Z7
C5
C7
Z18
RF
OUTPUT
C14
C15
C6
C10
Z10
C4 R2
Z1
C9
C3
Z8
RF
INPUT
VSUPPLY
+
C11
C12
C13
DUT
Z11
+
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.266 0.067 Microstrip
0.331 0.067 Microstrip
0.598 0.067 Microstrip
0.315 0.276 Microstrip
0.054 0.669 Microstrip
0.419 0.669 Microstrip
0.256 0.669 Microstrip
0.986 0.071 Microstrip
0.201 0.571 Microstrip
Z10, Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
C17
C18
1.292 0.079 Microstrip
0.680 0.571 Microstrip
0.132 0.117 Microstrip
0.705 0.117 Microstrip
0.159 0.117 Microstrip
0.140 0.067 Microstrip
0.077 0.067 Microstrip
0.163 0.067 Microstrip
Figure 2. MRF6V3090N 860 MHz Narrowband Test Circuit Schematic
Table 7. MRF6V3090N 860 MHz Narrowband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kermet
C2, C9, C17
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C3, C5, C8, C14, C16
43 pF Chip Capacitors
ATC100B430JT500XT
ATC
C4
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C6
2.2 pF Chip Capacitor
ATC100B2R2JT500XT
ATC
C7
9.1 pF Chip Capacitor
ATC100B9R1CT500XT
ATC
C10, C18
220 F, 100 V Electrolytic Capacitors
EEVFK2A221M
Panasonic--ECG
C11, C15
7.5 pF Chip Capacitors
ATC100B7R5CT500XT
ATC
C12
3.0 pF Chip Capacitor
ATC100B3R0CT500XT
ATC
C13
0.7 pF Chip Capacitor
ATC100B0R7BT500XT
ATC
R1
10 k, 1/4 W Chip Resistor
CRCW120610KOJNEA
Vishay
R2
10 , 1/4 W Chip Resistor
CRCW120610ROJNEA
Vishay
PCB
0.030, r = 3.5
RF--35
Taconic
MRF6V3090N MRF6V3090NB
4
RF Device Data
Freescale Semiconductor, Inc.
-C1
C10
C8
C2
C3
C4
C5
C6
C7
MRF6V3090N
Rev. 0
C11
R2
C15
CUT OUT AREA
R1
C9
C16
C14
C12
C13
C17
C18
--
Figure 3. MRF6V3090N 860 MHz Narrowband Test Circuit Component Layout
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
24
Ciss
70
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
Coss
Crss
0
10
20
50
21
40
20
30
19
20
D
10
17
40
30
22
18
Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc
10
50
10
1
100
0
200
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS)
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Narrowband Test Circuit)
56
P3dB = 51.28 dBm (134.3 W)
55
54
53
52
25
Ideal
24
P2dB = 51.06 dBm (127.6 W)
23
P1dB = 50.7 dBm (117.5 W)
Actual
51
50
49
48
--6
--5
--4
--3
--1
--2
1
0
2
3
22
21
20
19
50 V
18
45 V
17
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
47
IDQ = 350 mA, f = 860 MHz
VDD = 40 V
16
4
10 20 30 40
50 60
70 80 90 100 110 120 130 140 150
Pin, INPUT POWER (dBm)
Pout, OUTPUT POWER (WATTS)
Figure 6. CW Output Power versus Input Power
(Narrowband Test Circuit)
Figure 7. CW Power Gain versus Output Power
(Narrowband Test Circuit)
25
VDD = 50 Vdc, IDQ = 350 mA, f = 860 MHz
TC = --30_C
Gps, POWER GAIN (dB)
24
60
Gps
23
TC = --30_C
85_C
50
25_C
22
40
21
85_C
30
25_C
D
20
20
10
19
18
70
1
10
100
D, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (dBm)
Gps, POWER GAIN (dB)
100
60
Gps
Gps, POWER GAIN (dB)
C, CAPACITANCE (pF)
23
D, DRAIN EFFICIENCY (%)
1000
0
200
Pout, OUTPUT POWER (WATTS)
Figure 8. CW Power Gain and Drain Efficiency versus
Output Power (Narrowband Test Circuit)
MRF6V3090N MRF6V3090NB
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TWO--TONE (NARROWBAND TEST CIRCUIT)
--20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--10
VDD = 50 Vdc, IDQ = 350 mA, f1 = 854 MHz
f2 = 860 MHz, Two--Tone Measurements
--20
--30
3rd Order
--40
5th Order
--50
--60
7th Order
--70
10
1
100
--30
3rd Order
--35
--40
5th Order
--45
--50
--55
7th Order
--60
--65
200
1
90
10
Pout, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Output Power
Figure 10. Intermodulation Distortion
Products versus Two--Tone Spacing
23.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
--10
23
Gps, POWER GAIN (dB)
VDD = 50 Vdc, Pout = 90 W (PEP), IDQ = 350 mA
f = 860 MHz, Two--Tone Measurements
--25
IDQ = 450 mA
22.5
22
350 mA
21.5
300 mA
21 250 mA
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
20.5
VDD = 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Two--Tone Measurements, 6 MHz Tone Spacing
--20
--30
IDQ = 250 mA
--40
300 mA
--50
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 11. Two--Tone Power Gain versus
Output Power
200
450 mA
350 mA
--60
20
1
10
100
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Third Order Intermodulation
Distortion versus Output Power
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
7
TYPICAL CHARACTERISTICS — DVB--T (8k OFDM)
100
--20
7.61 MHz
--30
10
--50
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
0.01
--90
--110
2
0
4
6
8
10
12
--3
--2
--1
0
1
2
3
4
Figure 13. Single--Carrier DVB--T (8k OFDM)
Figure 14. DVB--T (8k OFDM) Spectrum
350 mA
300 mA
VDD = 50 Vdc, f = 860 MHz
DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
20.5
10
1
40
--54
VDD = 50 Vdc, f = 860 MHz
--56 DVB--T (8k OFDM), 64 QAM Data
Carrier Modulation, 5 Symbols
--58
--60
IDQ = 250 mA
--62
300 mA
--64
350 mA
--66
450 mA
--68
Gps, POWER GAIN (dB)
Figure 16. Single--Carrier DVB--T (8k OFDM) ACPR
versus Output Power (Narrowband Test Circuit)
50
--30_C
VDD = 50 Vdc, IDQ = 350 mA
f = 860 MHz, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation
5 Symbols
85_C
--45
--50
D
25_C
30
20
--55
85_C
Gps
--60
TC = --30_C
25_C
ACPR
--65
10
0
--70
1
40
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier DVB--T (8k OFDM) Power Gain
versus Output Power (Narrowband Test Circuit)
D, DRAIN
EFFICIENCY (%)
10
1
Pout, OUTPUT POWER (WATTS) AVG.
40
5
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
250 mA
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
Gps, POWER GAIN (dB)
--4
f, FREQUENCY (MHz)
22.5
21
--5
PEAK--TO--AVERAGE (dB)
IDQ = 450 mA
21.5
DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
--100
23
22
4 kHz BW
ACPR Measured at 4 MHz Offset
from Center Frequency
--70
--80
0.001
0.0001
4 kHz BW
--60
0.1
(dB)
PROBABILITY (%)
--40
1
10
40
Pout, OUTPUT POWER (WATTS) AVG.
Figure 17. Single--Carrier DVB--T (8k OFDM) Drain
Efficiency, Power Gain and ACPR versus Output Power
(Narrowband Test Circuit)
MRF6V3090N MRF6V3090NB
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
109
VDD = 50 Vdc
Pout = 18 W Avg.
D = 28.5%
MTTF (HOURS)
108
107
106
105
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C)
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 18. MTTF versus Junction Temperature -- CW
VDD = 50 Vdc, IDQ = 350 mA, Pout = 18 W Average
f
MHz
Zsource
Zload
860
1.58 -- j0.89
3.51 -- j3.98
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 19. Series Equivalent Source and Load Impedance (Narrowband Test Circuit)
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
9
470--860 MHz BROADBAND REFERENCE CIRCUIT
VDD = 50 Volts, IDQ = 450 mA, Channel Bandwidth = 8 MHz, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
Output
PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM)
4.5 Avg.
470
21.5
11.6
9.9
--37.5
650
22.8
11.8
9.9
--41.7
860
21.8
11.9
9.8
--40.3
470
21.6
18.2
9.5
--37.4
650
22.8
18.6
9.7
--40.2
860
21.8
18.9
9.5
--39.0
470
21.6
26.8
8.6
--31.8
650
22.9
28.0
8.7
--34.4
860
21.9
28.3
7.9
--29.2
9 Avg.
18 Avg.
R1
VDD
VGG
C14
C15
C16 C17
C13
C20
C5
C4
C7
C1
C12
C9
C2
C8
C6
C18 C19
C3
C11
C10
Q1
MRF6V3090N
Rev. 2
Figure 20. MRF6V3090N 470--860 MHz Broadband 2 3 Compact Reference Circuit Component Layout
MRF6V3090N MRF6V3090NB
10
RF Device Data
Freescale Semiconductor, Inc.
470--860 MHz BROADBAND REFERENCE CIRCUIT
Table 8. MRF6V3090N 470--860 MHz Broadband 2 3 Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C12
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C2
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4, C5, C6
13 pF Chip Capacitors
ATC100B130JT500XT
ATC
C7, C8, C11
2.2 pF Chip Capacitors
ATC100B2R2JT500XT
ATC
C9
15 pF Chip Capacitor
ATC100B150JT500XT
ATC
C10
3.9 pF Chip Capacitor
ATC100B3R9CT500XT
ATC
C13
47 F, 16 V Tantalum Capacitor
T491D476K016AS
Kemet
C14, C17, C19
2.2 F, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C15, C16, C18
220 pF Chip Capacitors
ATC100B221JT200XT
ATC
C20
470 F, 63 V Electrolytic Capacitor
MCGPR63V477M13X26--RH
Multicomp
Q1
RF High Power Transistor
MRF6V3090NBR1
Freescale
R1
10 , 1/4 W Chip Resistor
CRCW120610RJ
Vishay
PCB
0.030, r = 3.5
RO4350B
Rogers
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 470--860 MHz BROADBAND REFERENCE CIRCUIT
23
Gps, POWER GAIN (dB)
60
VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM)
64 QAM Data Carrier Modulation, 5 Symbols
50
Gps
22
Pout = 4.5 W
9W
18 W
21
40
30
18 W
D
20
D, DRAIN EFFICIENCY (%)
24
20
9W
19
4.5 W
18
450
500
550
600
650
700
750
800
10
0
900
850
f, FREQUENCY (MHz)
Figure 21. Single--Carrier DVB--T (8k OFDM) Power Gain and Drain
Efficiency versus Frequency (Broadband Reference Circuit)
12
0
Pout = 4.5 W
OUTPUT PAR (dB)
10
9W
9
PAR
8
18 W
7
6
18 W
IMD(1)
5
9W
4
3
450
4.5 W
495
540
585
630
675
720
765
810
855
--5
--10
--15
--20
--25
--30
--35
IMD, INTERMODULATION
DISTORTION SHOULDER (dBc)
VDD = 50 Vdc, IDQ = 450 mA, DVB--T (8k OFDM)
11 64 QAM Data Carrier Modulation, 5 Symbols
--40
--45
900
f, FREQUENCY (MHz)
(1) Intermodulation distortion shoulder measurement made using
delta marker at 4.2 MHz offset from center frequency.
Figure 22. Single--Carrier DVB--T (8k OFDM) Output PAR and IMD
Shoulder versus Frequency (Broadband Reference Circuit)
70
VDD = 50 Vdc, IDQ = 450 mA
Pulse Width = 100 sec, 10% Duty Cycle
25
620 MHz
Gps, POWER GAIN (dB)
860 MHz
24
Gps
620 MHz
23
740 MHz
22
860 MHz
30
20
D
1
40
30
20
19
50
470 MHz
470 MHz
21
60
740
MHz
10
10
100
D DRAIN EFFICIENCY (%)
26
0
200
Pout, OUTPUT POWER (WATTS) PULSED
Figure 23. Pulsed Power Gain and Drain Efficiency
versus Output Power (Broadband Reference Circuit)
MRF6V3090N MRF6V3090NB
12
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
13
MRF6V3090N MRF6V3090NB
14
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
15
MRF6V3090N MRF6V3090NB
16
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
17
MRF6V3090N MRF6V3090NB
18
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Apr. 2010
Initial Release of Data Sheet
1
Dec. 2011
Changed “DVB--T OFDM” to “DVB--T (8k OFDM)” throughout
Fig. 6, CW Output Power versus Input Power: corrected typographical error in dBm to watts conversion
values, p. 5
Fig. 7, CW Power Gain versus Output Power (Narrowband Test Circuit): adjusted x--axis scale from 0 to
140 watts to 10 to 150 watts, p. 5
Updated Fig. 9, Intermodulation Distortion Products versus Output Power, to correct X--axis PEP power
values, p. 6
Fig. 10, Intermodulation Distortion Products versus Two--Tone Spacing: added f = 860 MHz to graph
callouts, p. 6
Updated Fig. 11, Two--Tone Power Gain versus Output Power, to correct X--axis PEP power values, p. 6
Updated Fig. 12, Third Order Intermodulation Distortion versus Output Power, to correct X--axis PEP
power values, p. 6
Fig. 18, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 8
Fig. 19, Series Equivalent Source and Load Impedance: removed plot, p. 9
Added 470--860 MHz Broadband Reference Circuit frequency table, p. 9
Added Fig. 20, 470--860 MHz Broadband 2 3 Compact Reference Circuit Component Layout, p. 9
Added Table 7, 470--860 MHz Broadband 2 3 Reference Circuit Component Designations and Values,
p. 10
Added Fig. 21, Single--Carrier DVB--T (8k OFDM) Power Gain and Drain Efficiency versus Frequency
(Broadband Reference Circuit), p. 11
Added Fig. 22, Single--Carrier DVB--T (8k OFDM) Output PAR and IMD Shoulder versus Frequency
(Broadband Reference Circuit), p. 11
Added Fig. 23, Pulsed Power Gain and Drain Efficiency versus Output Power (Broadband Reference
Circuit), p. 11
2
Oct. 2015
Added L--Band 960--1215 MHz performance data, p. 1
Replaced Case Outline TO--270WB--4 Issue D with Issue E, p. 1, 13–15. Added notes 9 and 10, four
exposed source tabs, and a feature control frame to E and E5 on p. 13. Removed style and pin information
from notes section on p. 15.
MRF6V3090N MRF6V3090NB
RF Device Data
Freescale Semiconductor, Inc.
19
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E 2010--2011, 2015 Freescale Semiconductor, Inc.
MRF6V3090N MRF6V3090NB
Document Number: MRF6V3090N
Rev. 2, 10/2015
20
RF Device Data
Freescale Semiconductor, Inc.
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