MRF6V4300NR5

Freescale Semiconductor Technical Data Document Number: MRF6V4300N Rev. 3, 4/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF6V4300NR1 MRF6V4300NBR1 Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz Power Gain — 22 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 10--600 MHz, 300 W, 50 V LATERAL N--CHANNEL SINGLE--ENDED BROADBAND RF POWER MOSFETs CASE 1486--03, STYLE 1 TO--270 WB--4 PLASTIC MRF6V4300NR1 CASE 1484--04, STYLE 1 TO--272 WB--4 PLASTIC MRF6V4300NBR1 PARTS ARE SINGLE--ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2008--2010. All rights reserved. RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Symbol Value (1,2) Unit RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Gate Threshold Voltage (VDS = 10 Vdc, ID = 800 μAdc) VGS(th) 0.9 1.65 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 900 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 105 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 304 — pF Characteristic Off Characteristics Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 150 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W, f = 450 MHz, CW Power Gain Gps 20 22 24 dB Drain Efficiency ηD 58 60 — % Input Return Loss IRL — --16 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. ATTENTION: The MRF6V4300N and MRF6V4300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V4300NR1 MRF6V4300NBR1 2 RF Device Data Freescale Semiconductor B3 VSUPPLY B1 VBIAS L2 C9 C1 C7 C4 C8 C2 R1 C13 L4 C12 RF INPUT C5 + Z1 Z2 Z3 L1 Z4 Z5 Z7 C17 Z9 C20 Z10 C22 Z11 C25 C26 Z12 C19 C23 C24 C27 C28 DUT C18 Z13 RF OUTPUT C15 Z6 C11 C16 Z8 C21 L5 C14 L3 C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.900″ x 0.082″ Microstrip 0.115″ x 0.170″ Microstrip 0.260″ x 0.170″ Microstrip 0.380″ x 0.170″ Microstrip 0.220″ x 0.220″ Microstrip 0.290″ x 0.630″ Microstrip 0.220″ x 0.630″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 PCB C6 B2 C3 VSUPPLY 0.380″ x 0.220″ Microstrip 0.040″ x 0.170″ Microstrip 0.315″ x 0.170″ Microstrip 0.230″ x 0.170″ Microstrip 0.390″ x 0.170″ Microstrip 0.680″ x 0.082″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 Figure 2. MRF6V4300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V4300NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short Ferrite Bead 2743019447 Fair--Rite B2, B3 Long Ferrite Beads 2743021447 Fair--Rite C1 47 μF, 25 V, Tantalum Capacitor T491B476M025AT Kemet C2, C3 22 μF, 50 V, Chip Capacitors C5750JF1H226ZT TDK C4, C5, C6, C7 1 μF, 100 V, Chip Capacitors C3225JB2A105KT TDK C8, C9, C10 15 nF, 100 V, Chip Capacitors C3225CH2A153JT TDK C11, C12, C13, C14, C15 240 pF, Chip Capacitors ATC100B241JT500XT ATC C16 9.1 pF, Chip Capacitor ATC100B9R1JT500XT ATC C17 15 pF, Chip Capacitor ATC100B150JT500XT ATC C18 51 pF, Chip Capacitor ATC100B510JT500XT ATC C19, C20 5.6 pF, Chip Capacitors ATC100B5R6JT500XT ATC C21, C22, C23, C24 4.3 pF, Chip Capacitors ATC100B4R3JT500XT ATC C25, C26, C27, C28 4.7 pF, Chip Capacitors ATC100B4R7JT500XT ATC L1 27 nH Inductor 1812SMS--27NJLC Coilcraft L2, L3 47 nH Inductors 1812SMS--47NJLC Coilcraft L4, L5 5 Turn, #18 AWG Inductors, Hand Wound Copper Wire R1 10 Ω, 1/4 W, Chip Resistor CRCW120610R1FKEA Vishay MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 3 C1 B1 C7 B3 C4 C8 C2 C9 C5 L2 R1 ATC C12 L1 C11 C17 C18 CUT OUT AREA C16 L4 C13 C20 C21 C22 C25 C26 C19 C23 C24 C27 C28 C15 L5 C14 L3 MRF6V4300N/NB Rev. 1 C10 C6 B2 C3 Figure 3. MRF6V4300NR1(NBR1) Test Circuit Component Layout MRF6V4300NR1 MRF6V4300NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 100 1000 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 10 0 10 20 30 Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 23 VGS = 3 V 22 8 Gps, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) 100 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 9 7 6 2.75 V 5 2.63 V 4 2.5 V 3 2 IDQ = 1350 mA 21 1125 mA 900 mA 20 450 mA 19 1 650 mA VDD = 50 Vdc f = 450 MHz 2.25 V 20 0 40 60 80 100 18 10 120 600 100 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power 0 --5 60 VDD = 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz Two--Tone Measurements, 100 kHz Tone Spacing --10 --15 --20 --25 --30 IDQ = 450 mA --35 650 mA --40 900 mA --45 --50 --55 --60 1350 mA 58 P1dB = 55.15 dBm (327 W) 57 56 Actual 55 54 53 52 VDD = 50 Vdc, IDQ = 900 mA f = 450 MHz 51 1125 mA 10 100 600 Ideal P3dB = 56.06 dBm (403 W) 59 Pout, OUTPUT POWER (dBm) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 10 1 50 40 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 10 0 TC = 25°C 1 1 50 28 29 30 31 32 33 34 35 36 37 38 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 60 23 20 19 18 25 V 35 V IDQ = 900 mA f = 450 MHz VDD = 20 V 0 50 100 150 250 200 300 350 45 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz 40 20 30 25 40 35 Figure 11. Power Output versus Power Input 108 80 25_C Gps 70 60 TC = --30_C 85_C 25_C 50 --30_C 21 18 10 50 Figure 10. Power Gain versus Output Power 23 19 85_C Pin, INPUT POWER (dBm) 24 20 TC = --30_C Pout, OUTPUT POWER (WATTS) CW 25 22 25_C 55 35 15 400 85_C 40 30 VDD = 50 Vdc IDQ = 900 mA f = 450 MHz ηD 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) 16 30 V 50 V 45 V 40 V 17 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 21 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 22 107 106 20 10 500 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 300 W, and ηD = 60%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6V4300NR1 MRF6V4300NBR1 6 RF Device Data Freescale Semiconductor Zo = 2 Ω f = 450 MHz Zsource f = 450 MHz Zload VDD = 50 Vdc, IDQ = 900 mA, Pout = 300 W CW f MHz Zsource Ω Zload Ω 450 0.39 + j1.26 1.27 + j0.96 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V4300NR1 MRF6V4300NBR1 8 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 9 MRF6V4300NR1 MRF6V4300NBR1 10 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 11 MRF6V4300NR1 MRF6V4300NBR1 12 RF Device Data Freescale Semiconductor MRF6V4300NR1 MRF6V4300NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages • AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2008 • Initial Release of Data Sheet 1 Oct. 2008 • Added Fig. 13, MTTF versus Junction Temperature, p. 6 2 Mar. 2009 • Corrected Zsource, “0.40 + j5.93” to “0.39 + j1.26” and Zload, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series Equivalent Source and Load Impedance data table and replotted data, p. 7 3 Apr. 2010 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 14 MRF6V4300NR1 MRF6V4300NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008--2010. All rights reserved. MRF6V4300NR1 MRF6V4300NBR1 Document Number: RF Device Data MRF6V4300N Rev. 3, 4/2010 Freescale Semiconductor 15