MRF6VP41KHR5

Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 6, 4/2012 RF Power Field Effect Transistors MRF6VP41KHR6 MRF6VP41KHSR6 N--Channel Enhancement--Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. 10--500 MHz, 1000 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs • Typical Pulse Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 20 dB Drain Efficiency — 64% • Capable of Handling 10:1 VSWR @ 50 Vdc, 450 MHz, 1000 Watts Peak Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters CW Operation Capability with Adequate Cooling Qualified Up to a Maximum of 50 VDD Operation Integrated ESD Protection Designed for Push--Pull Operation Greater Negative Gate--Source Voltage Range for Improved Class C Operation • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. For R5 Tape and Reel option, see p. 17. • • • • • CASE 375D--05, STYLE 1 NI--1230 MRF6VP41KHR6 CASE 375E--04, STYLE 1 NI--1230S MRF6VP41KHSR6 PARTS ARE PUSH--PULL RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage VGS --6, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C PD 1333 W Case Operating Temperature Operating Junction Temperature (1,2) Total Device Dissipation @ TC = 25°C, CW only (3) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to Fig. 12, Transient Thermal Impedance, for information to calculate value for pulsed operation. © Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF6VP41KHR6 MRF6VP41KHSR6 1 Table 2. Thermal Characteristics Symbol Value (1,2) Unit Thermal Impedance, Junction to Case Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle, 450 MHz (3) ZθJC 0.03 °C/W Thermal Resistance, Junction to Case CW: Case Temperature 84°C, 1000 W CW, 352.2 MHz RθJC 0.15 °C/W Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Machine Model (per EIA/JESD22--A115) A, passes 125 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit IGSS — — 10 μAdc V(BR)DSS 110 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 100 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 5 mA Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 1600 μAdc) VGS(th) 1 1.68 3 Vdc Gate Quiescent Voltage (5) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.2 3.5 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 4 Adc) VDS(on) — 0.28 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.3 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 147 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 506 — pF Characteristic Off Characteristics (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) On Characteristics Dynamic Characteristics (4) Functional Tests (5) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 450 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps 19 20 22 dB Drain Efficiency ηD 60 64 — % Input Return Loss IRL — --18 --9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Refer to Fig. 12, Transient Thermal Impedance, for other pulsed conditions. 4. Each side of device measured separately. 5. Measurement made with device in push--pull configuration. (continued) MRF6VP41KHR6 MRF6VP41KHSR6 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance — 352.2 MHz (In Freescale 352.2 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W CW Power Gain Gps — 20.1 — dB Drain Efficiency ηD — 67 — % Input Return Loss IRL — --10.2 — dB Typical Performance — 500 MHz (In Freescale 500 MHz Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 500 MHz, 100 μsec Pulse Width, 20% Duty Cycle Power Gain Gps — 19.5 — dB Drain Efficiency ηD — 66 — % Input Return Loss IRL — --23 — dB MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 3 B1 VBIAS + C2 C1 C3 L3 C4 L1 COAX1 Z2 Z4 Z6 C26 C27 C28 + C29 C30 Z14 Z8 RF INPUT Z1 C25 Z12 Z16 VSUPPLY + COAX3 Z18 Z20 C22 Z22 C23 Z10 RF Z24 OUTPUT C5 C7 Z3 C8 Z5 C9 Z7 DUT C10 Z11 C6 Z13 C15 C16 C17 C18 Z17 Z19 Z21 Z23 C19 Z9 C24 C21 Z15 COAX2 COAX4 C20 L2 L4 VBIAS B2 + C11 Z1 Z2*, Z3* Z4*, Z5* Z6, Z7 Z8*, Z9* Z10, Z11 Z12, Z13 C12 C13 C31 C14 0.366″ x 0.082″ Microstrip 0.170″ x 0.100″ Microstrip 0.220″ x 0.451″ Microstrip 0.117″ x 0.726″ Microstrip 0.792″ x 0.058″ Microstrip 0.316″ x 0.726″ Microstrip 0.262″ x 0.507″ Microstrip Z14*, Z15* Z16, Z17 Z18, Z19 Z20, Z21, Z22, Z23 Z24 PCB C32 C33 C34 + + C35 C36 VSUPPLY 0.764″ x 0.150″ Microstrip 0.290″ x 0.430″ Microstrip 0.100″ x 0.430″ Microstrip 0.080″ x 0.430″ Microstrip 0.257″ x 0.215″ Microstrip Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 * Line length includes microstrip bends Figure 2. MRF6VP41KHR6(HSR6) Pulse Test Circuit Schematic — 450 MHz Table 5. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Designations and Values — 450 MHz Part Description Part Number Manufacturer B1, B2 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1, C11 47 μF, 50 V Electrolytic Capacitors 476KXM063M Illinois C2, C12, C28, C34 0.1 μF Chip Capacitors CDR33BX104AKYS Kemet C3, C13, C27, C33 220 nF, 50 V Chip Capacitors C1812C224K5RAC Kemet C4, C14 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C5, C6, C8, C15 27 pF Chip Capacitors ATC100B270JT500XT ATC C7, C10 0.8--8.0 pF Variable Capacitors 27291SL Johanson Components C9 33 pF Chip Capacitor ATC100B330JT500XT ATC C16 12 pF Chip Capacitor ATC100B120JT500XT ATC C17 10 pF Chip Capacitor ATC100B100JT500XT ATC C18 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C19 8.2 pF Chip Capacitor ATC100B8R2CT500XT ATC C20, C21, C22, C23, C25, C32 240 pF Chip Capacitors ATC100B241JT200XT ATC C24 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C26, C31 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C29, C30, C35, C36 330 μF, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Nippon Chemi--Con Coax1, 2, 3, 4 25 Ω Semi Rigid Coax, 2.2″ Shield Length UT--141C--25 Micro--Coax L1, L2 2.5 nH, 1 Turn Inductors A01TKLC Coilcraft L3, L4 43 nH, 10 Turn Inductors B10TJLC Coilcraft MRF6VP41KHR6 MRF6VP41KHSR6 4 RF Device Data Freescale Semiconductor, Inc. C29 C27 C1 B1 C2 C3 MRF6VP41KH Rev. 1 C4 C25 L1 COAX1 COAX3 C23 C18 C19 C16 C10 C8 C9 C6 COAX2 C26 L3 CUT OUT AREA C5 C7 C15 C17 C22 C20 C21 C24 L4 L2 COAX4 C32 C11 C30 C28 B2 C12 C14 C13 C31 C33 C35 C36 C34 Figure 3. MRF6VP41KHR6(HSR6) Pulse Test Circuit Component Layout — 450 MHz MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 5 TYPICAL CHARACTERISTICS 100 Ciss ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc Crss 10 TJ = 200°C 10 0 10 20 40 30 100 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Note: Each side of device measured separately. Figure 4. Capacitance versus Drain--Source Voltage Figure 5. DC Safe Operating Area 80 18 Gps 60 50 40 17 ηD 16 30 15 20 14 10 13 1 63 P1dB = 60.33 dBm (1078.94 W) 62 61 Actual 60 59 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 58 57 56 0 1000 2000 100 10 Ideal P3dB = 60.70 dBm (1174.89 W) 64 70 Pout, OUTPUT POWER (dBm) 19 65 ηD, DRAIN EFFICIENCY (%) VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 20 Gps, POWER GAIN (dB) 1 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 21 55 34 35 36 37 38 39 40 41 42 43 Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Output Power versus Input Power 44 22 23 IDQ = 6000 mA 22 20 3600 mA Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) TC = 25°C 1 1 TJ = 175°C TJ = 150°C 21 1500 mA 20 750 mA 19 375 mA 18 VDD = 50 Vdc f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 150 mA 17 10 100 1000 18 45 V 16 VDD = 30 V 35 V 12 0 200 400 40 V IDQ = 150 mA, f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 14 2000 50 V 600 800 1000 1200 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Power Gain versus Output Power Figure 9. Power Gain versus Output Power 1400 MRF6VP41KHR6 MRF6VP41KHSR6 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 55 Gps, POWER GAIN (dB) 85_C 50 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% 45 40 19 18 30 25 80 70 85_C 60 25_C 16 50 40 ηD 15 30 14 20 13 10 40 35 1 45 0 1000 2000 100 10 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Output Power versus Input Power Figure 11. Power Gain and Drain Efficiency versus Output Power 109 f = 450 MHz 0.16 VDD = 50 Vdc Pout = 1000 W CW ηD = 67% 108 0.14 0.12 D = 0.7 0.1 PD D = 0.5 0.08 0.06 0.02 90 12 0.18 0.04 TC = --30_C Gps 17 t2 TC = Case Temperature ZJC = Thermal Impedance (from graph) PD = Peak Power Dissipation D = Duty Factor = t1/t2 t1 = Pulse Width; t2 = Pulse Period TJ (peak) = PD * ZθJC + TC D = 0.3 D = 0.1 0 0.00001 0.0001 t1 0.001 0.01 0.1 1 10 MTTF (HOURS) Pout, OUTPUT POWER (dBm) 20 25_C 35 20 ZθJC, THERMAL IMPEDANCE (°C/W) 21 TC = --30_C 60 100 VDD = 50 Vdc IDQ = 150 mA f = 450 MHz Pulse Width = 100 μsec Duty Cycle = 20% ηD, DRAIN EFFICIENCY (%) 22 65 107 106 105 90 110 130 150 170 190 210 230 RECTANGULAR PULSE WIDTH (S) TJ, JUNCTION TEMPERATURE (°C) Figure 12. Transient Thermal Impedance MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 250 NOTE: For pulse applications or CW conditions, use the MTTF calculator referenced above. Figure 13. MTTF versus Junction Temperature -- CW MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 7 Zo = 2 Ω f = 450 MHz f = 450 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 450 0.86 + j1.06 1.58 + j1.22 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 14. Series Equivalent Source and Load Impedance — 450 MHz MRF6VP41KHR6 MRF6VP41KHSR6 8 RF Device Data Freescale Semiconductor, Inc. -- C9 C7 C20 MRF6VP41KH 352 MHz Rev. 1 C5 -- C11 L3 C18 L1 COAX1 C22 COAX3 C14 C1 C3 C13 C4 COAX2 C15 CUT OUT AREA C2 C16 COAX4 L2 L4 C12 C17 B2 C10 C19 C6 C21 C23 C8 Figure 15. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 352.2 MHz Table 6. MRF6VP41KHR6(HSR6) Test Circuit Component Designations and Values — 352.2 MHz Part Description Part Number Manufacturer B1, B2 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1, C2 27 pF Chip Capacitors ATC100B270JT500XT ATC C3 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C4 75 pF Chip Capacitor ATC100B750JT500XT ATC C5, C6 2.2 μF Chip Capacitors C1825C225J5RAC Kemet C7, C8 220 nF Chip Capacitors C1812C224J5RAC Kemet C9, C10 0.1 μF Chip Capacitors CDR33BX104AKYS AVX C11, C12 47 μF, 50 V Electrolytic Capacitors 476KXM050M Illinois Cap C13 36 pF 500 V Chip Capacitor MCM01--009ED360J--F CDE C14, C15, C16, C17 240 pF Chip Capacitors ATC100B241JT200XT ATC C18, C19 2.2 μF Chip Capacitors G2225X7R225KT3AB ATC C20, C21, C22, C23 470 μF, 63 V Electrolytic Capacitors MCRH63V477M13X21--RH Multicomp Coax1, 2, 3, 4 25 Ω Semi Rigid Coax, 2.2″ Shield Length UT141--25 Precision Tube Company L1, L2 2.5 nH Inductors A01T Coilcraft L3, L4 10 Turn #16 AWG ID=0.160″ Inductors, Hand Wound Copper Wire Freescale PCB Arlon CuClad 250GX--0300--55--22, 0.030″, εr = 2.55 DS2655 DS Electronics MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 9 f = 352.2 MHz Zsource f = 352.2 MHz Zload Zo = 10 Ω VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W CW f MHz Zsource Ω Zload Ω 352.2 0.5 + j6.5 2.9 + j6.35 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 16. Series Equivalent Source and Load Impedance — 352.2 MHz MRF6VP41KHR6 MRF6VP41KHSR6 10 RF Device Data Freescale Semiconductor, Inc. C29 C27 C1 B1 C2 C3 MRF6VP41KH Rev. 1 C4 C25 L1 COAX1 COAX3 C23 C18 C19 C16 C10 C8 C9 C6 COAX2 C26 L3 CUT OUT AREA C5 C7 C15 C22 C20 C21 C24 L4 L2 COAX4 C32 B2 C12 C11 C30 C28 C14 C13 C31 C35 C33 C36 C34 C17 not used in MRF6VP41KHR6(HSR6) 500 MHz application. Figure 17. MRF6VP41KHR6(HSR6) Test Circuit Component Layout — 500 MHz Table 7. MRF6VP41KHR6(HSR6) Test Circuit Component Designations and Values — 500 MHz Part Description Part Number Manufacturer B1, B2 47 Ω, 100 MHz Short Ferrite Beads 2743019447 Fair--Rite C1, C11 47 μF, 50 V Electrolytic Capacitors 476KXM063M Illinois C2, C12, C28, C34 0.1 μF Chip Capacitors CDR33BX104AKYS Kemet C3, C13, C27, C33 220 nF, 50 V Chip Capacitors C1812C224K5RAC Kemet C4, C14 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C5, C6, C15 27 pF Chip Capacitors ATC100B270JT500XT ATC C7, C10 0.8--8.0 pF Variable Capacitors 27291SL Johanson Components C8 13 pF Chip Capacitor ATC100B120JT500XT ATC C9 33 pF Chip Capacitor ATC100B330JT500XT ATC C18 9.1 pF Chip Capacitor ATC100B9R1CT500XT ATC C16, C19 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C20, C21, C22, C23, C25, C32 240 pF Chip Capacitors ATC100B241JT200XT ATC C24 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C26, C31 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C29, C30, C35, C36 330 μF, 63 V Electrolytic Capacitors MCRH63V337M13X21--RH Multicomp Coax1, 2, 3, 4 25 Ω Semi Rigid Coax, 2.2″ Shield Length UT--141C--25 Micro--Coax L1, L2 2.5 nH, 1 Turn Inductors A01TKLC Coilcraft L3, L4 43 nH, 10 Turn Inductors B10TJLC Coilcraft C17 not used in MRF6VP41KHR6(HSR6) 500 MHz application. RF Device Data Freescale Semiconductor, Inc. MRF6VP41KHR6 MRF6VP41KHSR6 11 Zo = 2 Ω f = 500 MHz f = 500 MHz Zsource Zload VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz Zsource Ω Zload Ω 500 0.75 + j0.5 1.73 + j0.95 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 18. Series Equivalent Source and Load Impedance — 500 MHz MRF6VP41KHR6 MRF6VP41KHSR6 12 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 13 MRF6VP41KHR6 MRF6VP41KHSR6 14 RF Device Data Freescale Semiconductor, Inc. MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 15 MRF6VP41KHR6 MRF6VP41KHSR6 16 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF6VP41KH and MRF6VP41KHS parts will be available for 2 years after release of MRF6VP41KH and MRF6VP41KHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF6VP41KH and MRF6VP41KHS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Apr. 2008 • Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 Sept. 2008 • Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is measured separately, p. 5 • Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5 • Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 3 Nov. 2008 • Added CW operation capability bullet to Features section, p. 1 • Added CW operation to Maximum Ratings table, p. 1 • Added CW thermal data to Thermal Characteristics table, p. 2 • Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit impedance as measured from drain to drain, balanced configuration”; replaced impedance diagram to show push--pull test conditions, p. 7 4 Mar. 2009 • CW rating limits updated from 1176 W to 1107 W and 5.5 W/°C to 4.6 W/°C to reflect recent remeasured data, Max Ratings table, p. 1 • CW Thermal Characteristics changed from 81°C to 48°C and 0.16 °C/W to 0.15 °C/W using data from the most recent 352.2 MHz CW application circuit, p. 2 • Added Typical Performances table for 352.2 MHz and 500 MHz applications, p. 3 • Added Fig. 14, MTTF versus Junction Temperature -- CW, p. 7 • Added Figs. 16 and 18, Test Circuit Component Layout -- 352.2 MHz and 500 MHz, and Tables 6 and 7, Test Circuit Component Designations and Values -- 352.2 MHz and 500 MHz, p. 9, 11 • Added Figs. 17 and 19, Series Equivalent Source and Load Impedance -- 352.2 MHz and 500 MHz, p. 10, 12 (continued) MRF6VP41KHR6 MRF6VP41KHSR6 RF Device Data Freescale Semiconductor, Inc. 17 REVISION HISTORY (cont.) Revision Date 5 Apr. 2010 Description • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17 6 Apr. 2012 • Table 1, Maximum Ratings, CW Operation: changed CW rating from an RF based value to a maximum power dissipated value -- CW Operation @ TC = 25°C, 1107 W changed to Total Device Dissipation @ TC = 25°C, CW only, 1333 watts. Value change to 1333 watts applies only to devices with a date code of QQ1218 or newer. Refer to PCN15074, p. 1 • Table 2, Thermal Characteristics, Thermal Resistance, Junction to Case: 2.4 mil wire configuration thermal testing resulted in a case temperature change from 48°C to 84°C, p. 2 • Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD class, p. 2 • Modified figure titles and/or graph axes labels to clarify application use, p. 4--7 • Fig. 12, Transient Thermal Impedance: graph updated to show correct CW operation, p. 7 • Fig. 13, MTTF versus Junction Temperature -- Pulsed removed, p. 7. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 14, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 7 (renumbered as Fig. 13 after Fig. 13, MTTF versus Junction Temperature -- Pulsed removed) MRF6VP41KHR6 MRF6VP41KHSR6 18 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire, C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack, ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge, QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2008--2010, 2012 Freescale Semiconductor, Inc. MRF6VP41KHR6 MRF6VP41KHSR6 Document Number: RF Device Data MRF6VP41KH Rev. 6, 4/2012 Freescale Semiconductor, Inc. 19