Freescale Semiconductor
Technical Data
Document Number: MRF7S15100H
Rev. 2, 6/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S15100HR3
MRF7S15100HSR3
Designed for CDMA base station applications with frequencies from 1470 to
1510 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulations.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
600 mA, Pout = 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 19.5 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW
Output Power
• Typical Pout @ 1 dB Compression Point ' 100 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1470 - 1510 MHz, 23 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S1500HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S1500HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
75
0.36
W
W/°C
Symbol
Value (2,3)
CW Operation @ TA = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 55 W CW
Case Temperature 77°C, 23 W CW
RθJC
0.65
0.74
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008-2009. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S15100HR3 MRF7S15100HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDD = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 174 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 600 mAdc, Measured in Functional Test)
VGS(Q)
2
2.7
3.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1.74 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
0.6
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
300
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
176
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg., f = 1507.5 MHz, Single - Carrier
W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18
19.5
21
dB
Drain Efficiency
ηD
30
32
—
%
PAR
5.9
6.2
—
dB
ACPR
—
- 38
- 35
dBc
IRL
—
- 15
-8
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
MRF7S15100HR3 MRF7S15100HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 600 mA, 1470 - 1510 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
100
—
—
40
—
W
IMD Symmetry @ 90 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
70
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 23 W Avg.
GF
—
0.2
—
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout = 100 W CW
Φ
—
4.5
—
°
Delay
—
1.9
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 100 W CW,
f = 1490 MHz, Six Sigma Window
ΔΦ
—
23
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.010
—
dB/°C
ΔP1dB
—
0.007
—
W/°C
Average Group Delay @ Pout = 100 W CW, f = 1490 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
3
R2
B1
VBIAS
+
R3
RF
INPUT Z1
C5
C4
C3
R1
L1
Z12
Z13
C2
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
C1
L3
L2
VSUPPLY
+
C8
C11
C10
C9
Z26
Z14
Z15
Z28
Z16 Z17 Z18 Z19 Z20
Z21 Z22 Z23
Z24
Z25
RF
OUTPUT
C6
Z29
Z27
DUT
VSUPPLY
C7
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
0.084″
0.149″
0.149″
0.149″
0.084″
0.084″
0.218″
0.084″
0.224″
0.084″
1.288″
1.288″
1.288″
1.330″
x 0.078″ Microstrip
x 0.153″ Microstrip
x 0.303″ Microstrip
x 0.065″ Microstrip
x 0.146″ Microstrip
x 0.104″ Microstrip
x 0.080″ Microstrip
x 0.206″ Microstrip
x 0.085″ Microstrip
x 0.369″ Microstrip
x 0.206″ Microstrip
x 0.144″ Microstrip
x 0.369″ Microstrip
x 0.112″ Microstrip
Z15
Z16
Z17
Z18
Z19
Z20
Z21
Z22
Z23
Z24
Z25
Z26, Z27
Z28, Z29
PCB
C12
C13
1.330″ x 0.538″ Microstrip
0.270″ x 0.280″ Microstrip
0.187″ x 0.150″ Microstrip
0.084″ x 0.042″ Microstrip
0.184″ x 0.292″ Microstrip
0.084″ x 0.066″ Microstrip
0.886″ x 0.194″ Microstrip
0.300″ x 0.084″ Microstrip
0.084″ x 0.215″ Microstrip
0.221″ x 0.075″ Microstrip
0.084″ x 0.175″ Microstrip
0.200″ x 0.525″ Microstrip
0.235″ x 0.102″ Microstrip
Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55
Figure 1. MRF7S15100HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S15100HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
2743019447
Fair - Rite
C1, C6, C7, C8
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C2
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C3
10 pF Chip Capacitor
ATC100B100JT500XT
ATC
C4, C9, C13
6.8 μF, 50 V Chip Capacitors
C4532JB1H685MT
TDK
C5, C10
100 μF, 50 V Electrolytic Capacitors
222215371101
Vishay
C11, C12
2.2 μF, 50 V Chip Capacitors
C3225JB2A225MT
TDK
L1, L2, L3
7.15 nH Inductors
1606 - TLC
Coilcraft
R1, R2
100 Ω, 1/4 W Chip Resistors
CRCW12061000FKEA
Vishay
R3
10 KΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
MRF7S15100HR3 MRF7S15100HSR3
4
RF Device Data
Freescale Semiconductor
B1
R3
R2
C8
C3
C11
C9
C4
R1
L1
C5
C10
CUT OUT AREA
C2
C1
L3
L2
C6
C7
C12
C13
MRF7S15100H/HS Rev. 3
Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
19
34
Gps
33
18
ηD
VDD = 28 Vdc, Pout = 23 W (Avg.)
IDQ = 600 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
15
14
31
PARC
13
−36
−5
−37
−10
−38
12
−39
11
−40
ACPR
IRL
10
1400
1425
1450
1475
1500
1525
1550
1575
−15
−20
−25
−41
1600
−30
−0.7
−0.8
−0.9
−1
PARC (dB)
16
32
IRL, INPUT RETURN LOSS (dB)
17
ACPR (dBc)
Gps, POWER GAIN (dB)
ηD, DRAIN
EFFICIENCY (%)
35
20
−1.1
−1.2
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC)
Broadband Performance @ Pout = 23 Watts Avg.
IMD, INTERMODULATION DISTORTION (dBc)
20
750 mA
600 mA
18
450 mA
17
VDD = 28 Vdc, f = 1490 MHz
CW Measurements
300 mA
16
1
10
100
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 600 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1490 MHz
−20
IM3−L
−30
IM3−U
IM5−U
IM5−L
−40
IM7−U
−50
IM7−L
−60
−70
1
200
10
100
Pout, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
Figure 4. CW Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products
versus Tone Spacing
21
19
18
17
16
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
20
1
VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz, Single−Carrier
W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
0
ACPR
−1
−2
ηD
−15
50
−20
45
−1 dB = 24.14 W
40
Gps
−2 dB = 32.65 W
55
−3
35
−3 dB = 43.29 W
−4
−25
−30
ACPR (dBc)
19
−10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
IDQ = 900 mA
−35
30
−40
25
−45
PARC
−5
15
25
35
45
55
65
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio
Compression (PARC) versus Output Power
MRF7S15100HR3 MRF7S15100HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
22
25_C
−30_C 75
−25
60
85_C
Gps
85_C
25_C
16
−18
45
TC = −30_C
14
30
ACPR
15
12
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
ηD
10
1
10
100
0
200
−32
−39
−46
ACPR (dBc)
25_C
18
90
85_C
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
VDD = 28 Vdc, IDQ = 600 mA, f = 1490 MHz
Single−Carrier W−CDMA, 3.84 MHz
20 Channel Bandwidth
−53
−60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
0
25
−5
20
15
−10
10
−15
5
VDD = 28 Vdc
IDQ = 600 mA
S11
S11 (dB)
S21 (dB)
S21
−20
0
−25
1150 1250 1350 1450 1550 1650 1750 1850 1950 2050 2150 2250
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 32%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 9. MTTF versus Junction Temperature
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
10
0
−10
3.84 MHz
Channel BW
−20
1
Input Signal
−30
0.1
(dB)
PROBABILITY (%)
10
0.01
W−CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
0
1
2
3
4
5
6
−40
−50
−60
+ACPR in 3.84 MHz
Integrated BW
−ACPR in 3.84 MHz
Integrated BW
−70
−80
7
8
9
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA IQ Magnitude
Clipping, Single - Carrier Test Signal
10
−90
−100
−9
−7.2 −5.4 −3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 11. Single - Carrier W - CDMA Spectrum
MRF7S15100HR3 MRF7S15100HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
Zload
f = 1570 MHz
f = 1410 MHz
f = 1570 MHz
f = 1410 MHz
Zsource
VDD = 28 Vdc, IDQ = 600 mA, Pout = 23 W Avg.
f
MHz
Zsource
W
Zload
W
1410
2.51 - j5.82
4.12 - j4.20
1430
2.53 - j5.58
3.95 - j4.07
1450
2.55 - j5.36
3.78 - j3.94
1470
2.58 - j5.15
3.61 - j3.80
1490
2.62 - j4.97
3.45 - j3.65
1510
2.67 - j4.81
3.30 - j3.51
1530
2.73 - j4.68
3.15 - j3.37
1550
2.79 - j4.57
3.00 - j3.22
1570
2.85 - j4.49
2.87 - j3.06
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
56
Ideal
Pout, OUTPUT POWER (dBm)
55
P3dB = 51.63 dBm (146 W)
54
53
P1dB = 50.95 dBm (125 W)
52
Actual
51
50
49
48
VDD = 28 Vdc, IDQ = 600 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f = 1500 MHz
47
46
27
28
29
30
31
32
33
34
35
36
37
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
2.02 + j6.21
2.00 - j3.65
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
MRF7S15100HR3 MRF7S15100HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
T A
M
B
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
(FLANGE)
CASE 465 - 06
ISSUE G
NI - 780
MRF7S15100HR3
4X U
(FLANGE)
4X Z
(LID)
B
1
K
2X
2
B
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
D
bbb
M
T A
M
B
M
N
ccc
M
R
(LID)
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S15100HSR3
MRF7S15100HR3 MRF7S15100HSR3
RF Device Data
Freescale Semiconductor
11
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
July 2008
• Initial Release of Data Sheet
1
Feb. 2009
• Added Fig. 9, MTTF versus Junction Temperature, p. 7
2
June 2009
• Added Maximum CW limit and temperature derating factor to the Maximum Ratings table, p. 1
• Fig. 10, CCDF W - CDMA IQ Magnitude Clipping, Single - Carrier Test Signal and Fig. 11, Single - Carrier
W - CDMA Spectrum updated to show the undistorted input test signal, p. 8
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
MRF7S15100HR3 MRF7S15100HSR3
12
RF Device Data
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MRF7S15100HR3 MRF7S15100HSR3
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Data MRF7S15100H
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