Freescale Semiconductor
Technical Data
Document Number: MRF7S18125AH
Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF7S18125AHR3
MRF7S18125AHSR3
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for
all typical cellular base station modulations.
GSM Application
• Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout =
125 Watts CW, f = 1880 MHz.
Power Gain — 17 dB
Drain Efficiency — 55%
GSM EDGE Application
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA,
Pout = 57 Watts Avg., Full Frequency Band (1805 - 1880 MHz).
Power Gain — 17 dB
Drain Efficiency — 38%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 75 dBc
EVM — 1.75% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW
Output Power
• Typical Pout @ 1 dB Compression Point ] 140 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
1805- 1880 MHz, 125 W CW, 28 V
GSM, GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S18125AHR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S18125AHSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 125 W CW
Case Temperature 80°C, 71 W CW
RθJC
0.31
0.34
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S18125AHR3 MRF7S18125AHSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 316 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1100 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test)
VGG(Q)
4
5.3
7
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 3.16 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.15
—
pF
Output Capacitance
(VDD = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
675
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
312
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1880 MHz
Power Gain
Gps
15.5
17
18.5
dB
Drain Efficiency
ηD
51
55
—
%
Input Return Loss
IRL
—
- 12
-6
dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S18125AHR3 MRF7S18125AHSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1805 - 1880 MHz Bandwidth
Pout @ 1 dB Compression Point
P1dB
—
140
—
—
8
—
W
IMD Symmetry @ 125 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
35
—
MHz
Gain Flatness in 75 MHz Bandwidth @ Pout = 125 W CW
GF
—
0.8
—
dB
Average Deviation from Linear Phase in 75 MHz Bandwidth
@ Pout = 125 W CW
Φ
—
0.49
—
°
Delay
—
1.21
—
ns
Part - to - Part Insertion Phase Variation @ Pout = 125 W CW,
f = 1840 MHz, Six Sigma Window
ΔΦ
—
8.66
—
°
Gain Variation over Temperature
( - 30°C to +85°C)
ΔG
—
0.016
—
dB/°C
ΔP1dB
—
0.01
—
dBm/°C
Average Group Delay @ Pout = 125 W CW, f = 1840 MHz
Output Power Variation over Temperature
( - 30°C to +85°C)
MHz
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W
Avg., 1805 - 1880 MHz EDGE Modulation
Power Gain
Gps
—
17
—
dB
Drain Efficiency
ηD
—
38
—
%
Error Vector Magnitude
EVM
—
1.75
—
% rms
Spectral Regrowth at 400 kHz Offset
SR1
—
- 63
—
dBc
Spectral Regrowth at 600 kHz Offset
SR2
—
- 75
—
dBc
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
3
Z12
R1
VBIAS
VSUPPLY
+
R2
C1
Z11
C8
C9
R3
RF
INPUT
Z1
Z2
Z3
Z4
C3
C6
Z6
Z7
Z5
C7
C2
Z8
C13
C14 Z9
Z10
RF
OUTPUT
C10
DUT
C12
C15
Z13
C11
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.227″ x 0.083″ Microstrip
1.180″ x 0.083″ Microstrip
0.135″ x 0.083″ Microstrip
0.568″ x 1.000″ Microstrip
0.092″ x 1.000″ Microstrip
0.095″ x 1.000″ Microstrip
0.565″ x 1.000″ Microstrip
Z8
Z9
Z10
Z11
Z12, Z13
PCB
C4
C5
0.200″ x 0.083″ Microstrip
1.116″ x 0.083″ Microstrip
0.227″ x 0.083″ Microstrip
1.175″ x 0.080″ Microstrip
0.760″ x 0.080″ Microstrip
Taconic TLX - 8 RF35, 0.031″, εr = 2.55
Figure 1. MRF7S18125AHR3(HSR3) Test Circuit Schematic
Table 5. MRF7S18125AHR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1 μF, 50 V Chip Capacitor
C3216X5R1H105K
TDK
C2, C3, C4, C5
4.7 μF, 50 V Chip Capacitors
C4532X5R1H475M
TDK
C6
220 μF, 63 V Electrolytic Chip Capacitor
2222 136 68221
Vishay
C7, C8, C9, C10, C11
8.2 pF Chip Capacitors
ATC100B8R2BT500XT
ATC
C12, C13, C14
0.2 pF Chip Capacitors
ATC100B0R2BT500XT
ATC
C15
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2
10 kΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF7S18125AHR3 MRF7S18125AHSR3
4
RF Device Data
Freescale Semiconductor
VDD
R1
VGS
R2
C1 C8
C2
C9
C3
R3
C6
C13
C14
C10
C7
C12
CUT OUT AREA
C15
C11
C4
C5
MRF7S18125AH
Rev. 0
Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
17.5
VDD = 28 Vdc
Pout = 125 W CW, IDQ = 1100 mA
Gps
17
59
−7
58
−9
57
56
16.5
ηD
16
55
ηD, DRAIN EFFICIENCY (%)
18
−11
−13
−15
54
−17
53
1880
−19
15.5
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IRL
15
1810
1820
1830
1840
1850
1860
1870
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 125 Watts CW
60
ηD
16.5
40
VDD = 28 Vdc, Pout = 57 W Avg.
IDQ = 1100 mA, EDGE Modulation 30
16
IRL
15.5
EVM, ERROR VECTOR
MAGNITUDE (% rms)
Gps, POWER GAIN (dB)
50
20
15
10
EVM
14.5
1810
1820
1830
1840
1850
1860
0
1880
1870
−9
−11
−13
−15
−17
IRL, INPUT RETURN LOSS (dB)
Gps
17
−7
ηD, DRAIN
EFFICIENCY (%)
17.5
−19
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout = 57 Watts Avg.
18
IMD, INTERMODULATION DISTORTION (dBc)
0
IDQ = 1650 mA
1375 mA
Gps, POWER GAIN (dB)
17
825 mA
16
1100 mA
550 mA
15
14
VDD = 28 Vdc
f = 1840 MHz
13
10
100
300
VDD = 28 Vdc, Pout = 125 W (PEP)
IDQ = 1100 mA, Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
−10
−20
IM3−L
−30
IM5−L
−40
−50
IM3−U
IM5−U
IM7−L
IM7−U
−60
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) CW
TWO−TONE SPACING (MHz)
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion Products
versus Two - Tone Spacing
MRF7S18125AHR3 MRF7S18125AHSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
18
P6dB = 52.74 dBm (187.8 W)
17.5
Ideal
58
P3dB = 52.25 dBm (167.9 W)
57
56
55 P1dB = 51.60 dBm
54 (144.6 W)
Actual
53
52
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 1840 MHz
50
34
36
35
38
37
40
39
41
42
43
35
30
14
VDD = 28 Vdc
IDQ = 1100 mA
f = 1840 MHz
ηD
10
25
20
15
300
100
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Pulsed CW Output Power versus
Input Power
Figure 8. Power Gain and Drain Efficiency
versus Output Power
4
Pout = 78 W Avg.
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
2
43 W Avg.
1
15 W Avg.
0
1820
1830
1840
1850
1860
1880
1870
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% rms)
14.5
Pin, INPUT POWER (dBm)
1810
−50
Pout = 78 W Avg.
−55
VDD = 28 Vdc
IDQ = 1100 mA
EDGE Modulation
SR @ 400 kHz
−60
43 W Avg.
−65
15 W Avg.
−70
78 W Avg.
SR @ 600 kHz
−75
15 W Avg.
43 W Avg.
−80
1810
1820
1830
1840
1850
1860
1870
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
1880
−45
25_C
−40
−45
85_C
−50
−55
TC = −30_C
−60
VDD = 28 Vdc
IDQ = 1100 mA
f = 1840 MHz
EDGE Modulation
−65
−70
−75
SPECTRAL REGROWTH @ 600 kHz (dBc)
−35
SPECTRAL REGROWTH @ 400 kHz (dBc)
45
40
12.5
5
50
15
13
44
55
85_C
85_C
15.5
60
25_C
25_C
Gps
16
13.5
51
3
16.5
65
−30_C
17
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBc)
59
70
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
60
25_C
−50
−55
85_C
−60
TC = −30_C
−65
−70
−75
VDD = 28 Vdc, IDQ = 1100 mA
f = 1840 MHz, EDGE Modulation
−80
−85
0
20
40
60
80
100
120
140
160
180 200
Pout, OUTPUT POWER (WATTS)
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
0
20
40
60
80
100
120
140
160
180
200
Pout, OUTPUT POWER (WATTS)
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, IDQ = 1100 mA
f = 1840 MHz, EDGE Modulation
20
25_C
85_C
50
−30_C
16
12
40
30
ηD
EVM
8
20
85_C
4
TC = 25_C
0
1
18
TC = −30_C
17
25_C
16
85_C
VDD = 28 Vdc
Pout = 125 W CW
IDQ = 1100 mA
15
10
0
500
100
10
19
60
−30_C
Gps, POWER GAIN (dB)
24
ηD, DRAIN EFFICIENCY (%)
EVM, ERROR VECTOR MAGNITUDE (% rms)
TYPICAL CHARACTERISTICS
14
1810
1820
1830
1840
1850
1860
1870
Pout, OUTPUT POWER (WATTS) AVG.
f, FREQUENCY (MHz)
Figure 13. EVM and Drain Efficiency versus
Output Power
Figure 14. Power Gain versus Frequency
1880
109
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 125 W CW, and ηD = 55%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S18125AHR3 MRF7S18125AHSR3
8
RF Device Data
Freescale Semiconductor
GSM TEST SIGNAL
−10
−20
Reference Power
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
−30
−40
(dB)
−50
−60
−70
−80
−90
400 kHz
400 kHz
600 kHz
600 kHz
−100
−110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 16. EDGE Spectrum
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
9
Zo = 5 Ω
f = 1920 MHz
Zload
f = 1920 MHz
f = 1760 MHz
Zsource
f = 1760 MHz
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW
f
MHz
Zsource
W
Zload
W
1760
1.30 - j3.17
1.44 - j2.62
1780
1.27 - j3.05
1.41 - j2.47
1800
1.24 - j2.92
1.39 - j2.32
1820
1.21 - j2.80
1.37 - j2.17
1840
1.18 - j2.66
1.34 - j2.02
1860
1.15 - j2.52
1.31 - j1.88
1880
1.12 - j2.37
1.29 - j1.73
1900
1.09 - j2.21
1.26 - j1.58
1920
1.05 - j2.06
1.23 - j1.44
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF7S18125AHR3 MRF7S18125AHSR3
10
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
Pout, OUTPUT POWER (dBm)
61
60
59
P6dB = 53.68 dBm (233.3 W)
Ideal
P3dB = 53.07 dBm (202.7 W)
58
57
56
55
P1dB = 52.105 dBm
(162.4 W)
54
53
52
51
Actual
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW
10 μsec(on), 10% Duty Cycle, f =1840 MHz
50
49
30
31
32
33
34
35
36
37
38
39
40
41
42
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
0.60 - j2.81
1.05 - j2.36
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
R
(INSULATOR)
bbb
N
M
T A
B
M
M
ccc
M
T A
M
M
aaa
M
T A
M
ccc
H
B
S
(LID)
M
T A
B
M
(LID)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE G
NI - 780
MRF7S18125AHR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
4X U
(FLANGE)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
2X
2
B
(FLANGE)
K
D
bbb
M
T A
B
M
N
M
(LID)
ccc
M
R
M
T A
M
B
M
ccc
M
T A
S
(INSULATOR)
bbb
M
T A
M
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
H
C
3
E
A
A
F
T
SEATING
PLANE
(FLANGE)
CASE 465A - 06
ISSUE H
NI - 780S
MRF7S18125AHSR3
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
MRF7S18125AHR3 MRF7S18125AHSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Nov. 2008
Description
• Initial Release of Data Sheet
MRF7S18125AHR3 MRF7S18125AHSR3
RF Device Data
Freescale Semiconductor
13
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MRF7S18125AHR3 MRF7S18125AHSR3
Document Number: MRF7S18125AH
Rev. 0, 11/2008
14
RF Device Data
Freescale Semiconductor