MRF7S18125AHSR5

Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125AHR3 MRF7S18125AHSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1880 MHz. Power Gain — 17 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1805 - 1880 MHz). Power Gain — 17 dB Drain Efficiency — 38% Spectral Regrowth @ 400 kHz Offset = - 63 dBc Spectral Regrowth @ 600 kHz Offset = - 75 dBc EVM — 1.75% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1840 MHz, 125 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1805- 1880 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125AHR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125AHSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 80°C, 71 W CW RθJC 0.31 0.34 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S18125AHR3 MRF7S18125AHSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGG(Q) 4 5.3 7 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.15 — pF Output Capacitance (VDD = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 675 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 312 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1880 MHz Power Gain Gps 15.5 17 18.5 dB Drain Efficiency ηD 51 55 — % Input Return Loss IRL — - 12 -6 dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S18125AHR3 MRF7S18125AHSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1805 - 1880 MHz Bandwidth Pout @ 1 dB Compression Point P1dB — 140 — — 8 — W IMD Symmetry @ 125 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 35 — MHz Gain Flatness in 75 MHz Bandwidth @ Pout = 125 W CW GF — 0.8 — dB Average Deviation from Linear Phase in 75 MHz Bandwidth @ Pout = 125 W CW Φ — 0.49 — ° Delay — 1.21 — ns Part - to - Part Insertion Phase Variation @ Pout = 125 W CW, f = 1840 MHz, Six Sigma Window ΔΦ — 8.66 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.016 — dB/°C ΔP1dB — 0.01 — dBm/°C Average Group Delay @ Pout = 125 W CW, f = 1840 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MHz Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W Avg., 1805 - 1880 MHz EDGE Modulation Power Gain Gps — 17 — dB Drain Efficiency ηD — 38 — % Error Vector Magnitude EVM — 1.75 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 63 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 75 — dBc MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 3 Z12 R1 VBIAS VSUPPLY + R2 C1 Z11 C8 C9 R3 RF INPUT Z1 Z2 Z3 Z4 C3 C6 Z6 Z7 Z5 C7 C2 Z8 C13 C14 Z9 Z10 RF OUTPUT C10 DUT C12 C15 Z13 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.227″ x 0.083″ Microstrip 1.180″ x 0.083″ Microstrip 0.135″ x 0.083″ Microstrip 0.568″ x 1.000″ Microstrip 0.092″ x 1.000″ Microstrip 0.095″ x 1.000″ Microstrip 0.565″ x 1.000″ Microstrip Z8 Z9 Z10 Z11 Z12, Z13 PCB C4 C5 0.200″ x 0.083″ Microstrip 1.116″ x 0.083″ Microstrip 0.227″ x 0.083″ Microstrip 1.175″ x 0.080″ Microstrip 0.760″ x 0.080″ Microstrip Taconic TLX - 8 RF35, 0.031″, εr = 2.55 Figure 1. MRF7S18125AHR3(HSR3) Test Circuit Schematic Table 5. MRF7S18125AHR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1 μF, 50 V Chip Capacitor C3216X5R1H105K TDK C2, C3, C4, C5 4.7 μF, 50 V Chip Capacitors C4532X5R1H475M TDK C6 220 μF, 63 V Electrolytic Chip Capacitor 2222 136 68221 Vishay C7, C8, C9, C10, C11 8.2 pF Chip Capacitors ATC100B8R2BT500XT ATC C12, C13, C14 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC C15 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRF7S18125AHR3 MRF7S18125AHSR3 4 RF Device Data Freescale Semiconductor VDD R1 VGS R2 C1 C8 C2 C9 C3 R3 C6 C13 C14 C10 C7 C12 CUT OUT AREA C15 C11 C4 C5 MRF7S18125AH Rev. 0 Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 17.5 VDD = 28 Vdc Pout = 125 W CW, IDQ = 1100 mA Gps 17 59 −7 58 −9 57 56 16.5 ηD 16 55 ηD, DRAIN EFFICIENCY (%) 18 −11 −13 −15 54 −17 53 1880 −19 15.5 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IRL 15 1810 1820 1830 1840 1850 1860 1870 f, FREQUENCY (MHz) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 125 Watts CW 60 ηD 16.5 40 VDD = 28 Vdc, Pout = 57 W Avg. IDQ = 1100 mA, EDGE Modulation 30 16 IRL 15.5 EVM, ERROR VECTOR MAGNITUDE (% rms) Gps, POWER GAIN (dB) 50 20 15 10 EVM 14.5 1810 1820 1830 1840 1850 1860 0 1880 1870 −9 −11 −13 −15 −17 IRL, INPUT RETURN LOSS (dB) Gps 17 −7 ηD, DRAIN EFFICIENCY (%) 17.5 −19 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 57 Watts Avg. 18 IMD, INTERMODULATION DISTORTION (dBc) 0 IDQ = 1650 mA 1375 mA Gps, POWER GAIN (dB) 17 825 mA 16 1100 mA 550 mA 15 14 VDD = 28 Vdc f = 1840 MHz 13 10 100 300 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 1100 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz −10 −20 IM3−L −30 IM5−L −40 −50 IM3−U IM5−U IM7−L IM7−U −60 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing MRF7S18125AHR3 MRF7S18125AHSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18 P6dB = 52.74 dBm (187.8 W) 17.5 Ideal 58 P3dB = 52.25 dBm (167.9 W) 57 56 55 P1dB = 51.60 dBm 54 (144.6 W) Actual 53 52 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 1840 MHz 50 34 36 35 38 37 40 39 41 42 43 35 30 14 VDD = 28 Vdc IDQ = 1100 mA f = 1840 MHz ηD 10 25 20 15 300 100 Pout, OUTPUT POWER (WATTS) CW Figure 7. Pulsed CW Output Power versus Input Power Figure 8. Power Gain and Drain Efficiency versus Output Power 4 Pout = 78 W Avg. VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation 2 43 W Avg. 1 15 W Avg. 0 1820 1830 1840 1850 1860 1880 1870 SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) EVM, ERROR VECTOR MAGNITUDE (% rms) 14.5 Pin, INPUT POWER (dBm) 1810 −50 Pout = 78 W Avg. −55 VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation SR @ 400 kHz −60 43 W Avg. −65 15 W Avg. −70 78 W Avg. SR @ 600 kHz −75 15 W Avg. 43 W Avg. −80 1810 1820 1830 1840 1850 1860 1870 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 9. EVM versus Frequency Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency 1880 −45 25_C −40 −45 85_C −50 −55 TC = −30_C −60 VDD = 28 Vdc IDQ = 1100 mA f = 1840 MHz EDGE Modulation −65 −70 −75 SPECTRAL REGROWTH @ 600 kHz (dBc) −35 SPECTRAL REGROWTH @ 400 kHz (dBc) 45 40 12.5 5 50 15 13 44 55 85_C 85_C 15.5 60 25_C 25_C Gps 16 13.5 51 3 16.5 65 −30_C 17 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBc) 59 70 TC = −30_C ηD, DRAIN EFFICIENCY (%) 60 25_C −50 −55 85_C −60 TC = −30_C −65 −70 −75 VDD = 28 Vdc, IDQ = 1100 mA f = 1840 MHz, EDGE Modulation −80 −85 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) Figure 11. Spectral Regrowth at 400 kHz versus Output Power 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQ = 1100 mA f = 1840 MHz, EDGE Modulation 20 25_C 85_C 50 −30_C 16 12 40 30 ηD EVM 8 20 85_C 4 TC = 25_C 0 1 18 TC = −30_C 17 25_C 16 85_C VDD = 28 Vdc Pout = 125 W CW IDQ = 1100 mA 15 10 0 500 100 10 19 60 −30_C Gps, POWER GAIN (dB) 24 ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) TYPICAL CHARACTERISTICS 14 1810 1820 1830 1840 1850 1860 1870 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 13. EVM and Drain Efficiency versus Output Power Figure 14. Power Gain versus Frequency 1880 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 125 W CW, and ηD = 55%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature MRF7S18125AHR3 MRF7S18125AHSR3 8 RF Device Data Freescale Semiconductor GSM TEST SIGNAL −10 −20 Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 −70 −80 −90 400 kHz 400 kHz 600 kHz 600 kHz −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 16. EDGE Spectrum MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 1920 MHz Zload f = 1920 MHz f = 1760 MHz Zsource f = 1760 MHz VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW f MHz Zsource W Zload W 1760 1.30 - j3.17 1.44 - j2.62 1780 1.27 - j3.05 1.41 - j2.47 1800 1.24 - j2.92 1.39 - j2.32 1820 1.21 - j2.80 1.37 - j2.17 1840 1.18 - j2.66 1.34 - j2.02 1860 1.15 - j2.52 1.31 - j1.88 1880 1.12 - j2.37 1.29 - j1.73 1900 1.09 - j2.21 1.26 - j1.58 1920 1.05 - j2.06 1.23 - j1.44 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF7S18125AHR3 MRF7S18125AHSR3 10 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS Pout, OUTPUT POWER (dBm) 61 60 59 P6dB = 53.68 dBm (233.3 W) Ideal P3dB = 53.07 dBm (202.7 W) 58 57 56 55 P1dB = 52.105 dBm (162.4 W) 54 53 52 51 Actual VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f =1840 MHz 50 49 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 0.60 - j2.81 1.05 - j2.36 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A B M M ccc M T A M M aaa M T A M ccc H B S (LID) M T A B M (LID) M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF7S18125AHR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF7S18125AHSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S18125AHR3 MRF7S18125AHSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 Description • Initial Release of Data Sheet MRF7S18125AHR3 MRF7S18125AHSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF7S18125AHR3 MRF7S18125AHSR3 Document Number: MRF7S18125AH Rev. 0, 11/2008 14 RF Device Data Freescale Semiconductor