MRF7S18125BHR3

Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain — 16.5 dB Drain Efficiency — 55% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz). Power Gain — 17 dB Drain Efficiency — 39% Spectral Regrowth @ 400 kHz Offset = - 60 dBc Spectral Regrowth @ 600 kHz Offset = - 74 dBc EVM — 2.6% rms • Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125BHR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125BHSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 125 W CW Case Temperature 81°C, 71 W CW RθJC 0.31 0.35 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF7S18125BHR3 MRF7S18125BHSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 μAdc) VGS(th) 1.2 1.9 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) VGG(Q) 4 5.3 7 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.15 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 673 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 309 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1930 MHz Power Gain Gps 15 16.5 18 dB Drain Efficiency ηD 51 55 — % Input Return Loss IRL — - 12 -7 dB 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S18125BHR3 MRF7S18125BHSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930 - 1990 MHz Bandwidth Pout @ 1 dB Compression Point P1dB — 140 — — 10 — W IMD Symmetry @ 125 W PEP, Pout where IMD Third Order Intermodulation ` 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 35 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW GF — 1.02 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 125 W CW Φ — 3.3 — ° Delay — 2.49 — ns Part - to - Part Insertion Phase Variation @ Pout = 125 W CW, f = 1960 MHz, Six Sigma Window ΔΦ — 6.7 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.016 — dB/°C ΔP1dB — 0.01 — dBm/°C Average Group Delay @ Pout = 125 W CW, f = 1960 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MHz Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W Avg., 1930 - 1990 MHz EDGE Modulation Power Gain Gps — 17 — dB Drain Efficiency ηD — 39 — % Error Vector Magnitude EVM — 2.6 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 60 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 74 — dBc MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 3 Z13 R1 VBIAS VSUPPLY + R2 C1 Z12 C8 R3 RF INPUT Z1 Z2 Z3 Z4 C2 C3 C14 C16 Z9 C15 C17 C11 C4 C6 Z6 Z7 Z5 C7 C9 Z8 RF OUTPUT Z11 C18 Z10 C10 DUT C12 C13 Z14 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.227″ x 0.083″ Microstrip 0.697″ x 0.083″ Microstrip 0.618″ x 0.083″ Microstrip 0.568″ x 1.000″ Microstrip 0.092″ x 1.000″ Microstrip 0.095″ x 1.000″ Microstrip 0.565″ x 1.000″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13, Z14 PCB C5 0.200″ x 0.083″ Microstrip 1.045″ x 0.083″ Microstrip 0.071″ x 0.083″ Microstrip 0.227″ x 0.083″ Microstrip 1.280″ x 0.080″ Microstrip 0.760″ x 0.080″ Microstrip Taconic TLX - 8 RF35, 0.031″, εr = 2.55 Figure 1. MRF7S18125BHR3(HSR3) Test Circuit Schematic Table 5. MRF7S18125BHR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1 μF, 50 V Chip Capacitor 12065G105AT2A AVX C2, C3, C4, C5 4.7 μF, 50 V Chip Capacitors GRM55ER71H475KA01L Murata C6 220 μF, 63 V Electrolytic Chip Capacitor 2222 136 68221 Vishay C7, C8, C9, C10, C11 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C12, C13 1 pF Chip Capacitors ATC100B1R0BT500XT ATC C14, C15, C16, C17, C18 0.2 pF Chip Capacitors ATC100B0R2BT500XT ATC R1, R2 10 kΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay R3 10 Ω, 1/4 W Chip Resistor CRCW120610R1FKEA Vishay MRF7S18125BHR3 MRF7S18125BHSR3 4 RF Device Data Freescale Semiconductor VDD VGS R1 R2 C1 C8 C9 C2 C3 R3 C6 C14 C18 C16 C10 C7 C12 C13 CUT OUT AREA C15 C17 C11 C4 C5 MRF7S18125BH Rev. 0 Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 17.5 VDD = 28 Vdc Pout = 125 W CW, IDQ = 1100 mA 17 58 −7 57 −9 56 Gps 55 16.5 ηD 54 16 15.5 53 ηD, DRAIN EFFICIENCY (%) 18 −11 −13 −15 −17 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS IRL 15 1930 1940 1950 1960 1970 1980 52 1990 −19 f, FREQUENCY (MHz) Gps Gps, POWER GAIN (dB) 17 50 ηD 16.5 40 VDD = 28 Vdc, Pout = 57 W Avg. IDQ = 1100 mA, EDGE Modulation 16 IRL 15.5 30 20 15 10 EVM 14.5 1930 1940 1950 1960 1970 1980 0 1990 −9 −11 −13 −15 −17 −19 IRL, INPUT RETURN LOSS (dB) 60 EVM, ERROR VECTOR MAGNITUDE (% rms) 17.5 ηD, DRAIN EFFICIENCY (%) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 125 Watts CW −21 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 57 Watts Avg. 18 IMD, INTERMODULATION DISTORTION (dBc) 0 IDQ = 1650 mA 1375 mA Gps, POWER GAIN (dB) 17 1100 mA 16 825 mA 550 mA 15 14 VDD = 28 Vdc f = 1960 MHz 13 10 100 300 VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 1100 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz −10 −20 IM3−U −30 IM3−L IM5−U −40 IM5−L IM7−U −50 IM7−L −60 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 5. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing MRF7S18125BHR3 MRF7S18125BHSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 18 P6dB = 52.59 dBm (181.6 W) Ideal 17 58 P3dB = 52.16 dBm (164.4 W) 57 56 55 54 P1dB = 51.61 dBm (145 W) 53 Actual 52 51 34 35 36 37 38 40 39 41 42 EVM, ERROR VECTOR MAGNITUDE (% rms) Gps 16 5 15 35 30 14.5 ηD 25 20 15 300 100 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW Figure 7. Pulsed CW Output Power versus Input Power Figure 8. Power Gain and Drain Efficiency versus Output Power 4 3 50 W Avg. 2 18 W Avg. 1 1940 1950 1960 1970 1980 1990 −50 Pout = 78 W Avg. −55 VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation SR @ 400 kHz −60 50 W Avg. −65 78 W Avg. −70 18 W Avg. SR @ 600 kHz −75 −80 1930 50 W Avg. 18 W Avg. 1940 1950 1960 1970 1980 1990 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 9. EVM versus Frequency Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency −35 −45 −40 −45 25_C −50 85_C −55 TC = −30_C −60 VDD = 28 Vdc IDQ = 1100 mA f = 1960 MHz EDGE Modulation −65 −70 −75 SPECTRAL REGROWTH @ 600 kHz (dBc) SPECTRAL REGROWTH @ 400 kHz (dBc) VDD = 28 Vdc IDQ = 1100 mA f = 1960 MHz 10 43 Pout = 78 W Avg. 0 1930 45 40 13 VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation 50 85_C 15.5 13.5 6 55 85_C SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) 50 33 60 25_C 25_C 16.5 14 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 12 μsec(on), 1% Duty Cycle, f = 1960 MHz 65 −30_C TC = −30_C 17.5 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBc) 59 ηD, DRAIN EFFICIENCY (%) 60 −50 25_C −55 −60 85_C −65 TC = −30_C −70 −75 VDD = 28 Vdc, IDQ = 1100 mA f = 1960 MHz, EDGE Modulation −80 −85 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) Figure 11. Spectral Regrowth at 400 kHz versus Output Power 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 7 60 VDD = 28 Vdc, IDQ = 1100 mA f = 1960 MHz, EDGE Modulation 20 50 TC = 25_C 85_C 16 12 ηD 19 25_C 40 30 −30_C 8 20 −30_C 85_C 4 10 18 Gps, POWER GAIN (dB) 24 ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (% rms) TYPICAL CHARACTERISTICS TC = −30_C 17 25_C 16 85_C 15 VDD = 28 Vdc Pout = 125 W CW IDQ = 1100 mA EVM 0 1 10 0 500 100 14 1930 1940 1950 1960 1970 1980 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 13. EVM and Drain Efficiency versus Output Power Figure 14. Power Gain versus Frequency 1990 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 125 W CW, and ηD = 55%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 15. MTTF versus Junction Temperature MRF7S18125BHR3 MRF7S18125BHSR3 8 RF Device Data Freescale Semiconductor GSM TEST SIGNAL −10 −20 Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz −30 −40 (dB) −50 −60 −70 −80 −90 400 kHz 400 kHz 600 kHz 600 kHz −100 −110 Center 1.96 GHz 200 kHz Span 2 MHz Figure 16. EDGE Spectrum MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 2040 MHz Zload f = 1880 MHz f = 2040 MHz f = 1880 MHz Zsource VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW f MHz Zsource W Zload W 1880 1.31 - j3.61 1.32 - j3.06 1900 1.25 - j3.06 1.30 - j2.92 1920 1.21 - j3.30 1.28 - j2.79 1940 1.17 - j3.17 1.26 - j2.67 1960 1.13 - j3.06 1.23 - j2.55 1980 1.10 - j2.92 1.20 - j2.42 2000 1.06 - j2.83 1.18 - j2.30 2020 0.99 - j2.75 1.16 - j2.18 2040 0.91 - j2.66 1.12 - j2.07 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF7S18125BHR3 MRF7S18125BHSR3 10 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS Pout, OUTPUT POWER (dBm) 61 60 59 Ideal P6dB = 54.29 dBm (268.5 W) P3dB = 53.76 dBm (237.7 W) 58 57 56 55 P1dB = 52.89 dBm (194.5 W) Actual 54 53 52 51 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f =1960 MHz 50 49 32 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 0.65 - j4.06 0.73 - j2.62 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M R (INSULATOR) bbb N M T A B M M ccc M T A M M aaa M T A M ccc H B S (LID) M T A B M (LID) M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF7S18125BHR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF7S18125BHSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S18125BHR3 MRF7S18125BHSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 Description • Initial Release of Data Sheet MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF7S18125BHR3 MRF7S18125BHSR3 Document Number: MRF7S18125BH Rev. 0, 11/2008 14 RF Device Data Freescale Semiconductor