MRF7S21150HSR5

Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1350 mA, Pout = 44 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 31% Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 150 Watts CW Output Power • Pout @ 1 dB Compression Point w 150 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 44 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465- 06, STYLE 1 NI - 780 MRF7S21150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S21150HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 147 W CW Case Temperature 75°C, 45 W CW RθJC 0.33 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007, 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21150HR3 MRF7S21150HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 348 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1350 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1350 mAdc, Measured in Functional Test) VGG(Q) 4.5 5.4 6.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) VDS(on) 0.1 0.15 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.9 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 590 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 320 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, Pout = 44 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 16.5 17.5 19.5 dB Drain Efficiency ηD 29 31 — % PAR 5.7 6.1 — dB ACPR — - 37 - 35 dBc IRL — - 15 -9 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S21150HR3 MRF7S21150HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1350 mA, 2110 - 2170 MHz Bandwidth Video Bandwidth @ 120 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz