MRF7S21210HR3

Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 18.5 dB Drain Efficiency — 29% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — --33 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ≃ 190 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. 2110--2170 MHz, 63 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs CASE 465--06, STYLE 1 NI--780 MRF7S21210HR3 CASE 465A--06, STYLE 1 NI--780S MRF7S21210HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C TJ 225 °C CW 253 1.5 W W/°C Symbol Value (2,3) Unit Operating Junction Temperature (1,2) CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 72°C, 63 W CW RθJC 0.33 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2008--2009, 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21210HR3 MRF7S21210HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGG(Q) 4 5.4 7 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 5.13 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.02 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 257 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 516 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17 18.5 20.5 dB Drain Efficiency ηD 26 29 — % PAR 5.5 5.9 — dB ACPR — --33 --31 dBc IRL — --15 --8 dB Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S21210HR3 MRF7S21210HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth IMD Symmetry @ 130 W PEP, Pout where IMD Third Order Intermodulation ≅ 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 15 — MHz VBWres — 60 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. GF — 1.2 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Φ — 1.1 — ° Delay — 2.5 — ns Part--to--Part Insertion Phase Variation @ Pout = 190 W CW, f = 2140 MHz, Six Sigma Window ∆Φ — 26 — ° Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.019 — dB/°C ∆P1dB — 0.011 — dB/°C VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Average Group Delay @ Pout = 190 W CW, f = 2140 MHz Output Power Variation over Temperature (--30°C to +85°C) MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 3 Z19 R1 VBIAS R2 C1 C2 Z17 C3 C10 R3 RF INPUT Z1 Z2 Z3 VSUPPLY + Z4 Z5 Z6 Z7 Z10 Z11 Z12 Z13 DUT C6 C12 C19 Z9 Z8 C5 C11 C13 RF C15 Z16 OUTPUT Z14 Z15 C14 Z18 Z20 + C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C8 C7 0.402″ x 0.066″ Microstrip 0.840″ x 0.076″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.029″ x 0.076″ Microstrip 0.194″ x 0.076″ Microstrip 0.051″ x 0.533″ Microstrip 0.114″ x 0.533″ Microstrip 0.139″ x 1.268″ Microstrip 0.304″ x 1.201″ Microstrip C16 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z20 PCB C17 C18 C20 0.044″ x 0.613″ Microstrip 0.398″ x 0.102″ Microstrip 0.071″ x 0.220″ Microstrip 0.071″ x 0.220″ Microstrip 0.439″ x 0.066″ Microstrip 0.764″ x 0.066″ Microstrip 0.353″ x 0.090″ Microstrip 0.797″ x 0.090″ Microstrip 0.660″ x 0.120″ Microstrip Taconic RF35, 0.030”, εr = 3.5 Figure 1. Test Circuit Schematic — MRF7S21210HR3 Table 5. Test Circuit Component Designations and Values — MRF7S21210HR3 Description Part Number C1, C9, C11, C12, C17, C18 Part 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK Manufacturer C2, C8 100 nF Chip Capacitors 12065C104KAT AVX C3, C7, C10, C13, C14, C16 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C5 5.6 pF Chip Capacitor ATC100B5R6BT500XT ATC C6 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C15 0.6 pF Chip Capacitor ATC100B0R6BT500XT ATC C19, C20 470 μF Electrolytic Capacitors 2222 12018471 BC Components R1, R2 10 KΩ, 1/4 W Chip Resistors WCR120610KL Welwyn R3 10 Ω, 1/4 W Chip Resistor 232272461009 Phycomp C4 not used in MRF7S21210HR3 part. MRF7S21210HR3 MRF7S21210HSR3 4 RF Device Data Freescale Semiconductor C10 R1 R3 R2 C1 C11 C12 C19 C3 C13 CUT OUT AREA C2 C5 C6 C15 C14 C20 C8 C9 C7 C17 C18 C16 MRF7S21210H Rev. 0 C4 not used in MRF7S21210HR3 part. Figure 2. Test Circuit Component Layout — MRF7S21210HR3 MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 5 Z20 R1 VBIAS R2 C1 C2 Z18 C3 C10 R3 RF INPUT Z1 Z2 Z3 Z4 VSUPPLY + Z5 Z6 Z7 Z8 Z11 Z12 Z13 Z14 DUT C6 C12 C19 Z10 Z9 C5 C4 C11 C13 RF C15 Z17 OUTPUT Z15 Z16 C14 Z19 Z21 + C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 C8 C7 0.402″ x 0.066″ Microstrip 0.840″ x 0.076″ Microstrip 0.029″ x 0.076″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.029″ x 0.076″ Microstrip 0.194″ x 0.076″ Microstrip 0.510″ x 0.533″ Microstrip 0.114″ x 0.533″ Microstrip 0.139″ x 1.268″ Microstrip 0.304″ x 1.201″ Microstrip C16 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20, Z21 PCB C17 C18 C20 0.044″ x 0.613″ Microstrip 0.398″ x 0.102″ Microstrip 0.071″ x 0.220″ Microstrip 0.071″ x 0.220″ Microstrip 0.439″ x 0.066″ Microstrip 0.764″ x 0.066″ Microstrip 0.353″ x 0.090″ Microstrip 0.797″ x 0.090″ Microstrip 0.660″ x 0.120″ Microstrip Taconic RF35, 0.030”, εr = 3.5 Figure 3. Test Circuit Schematic — MRF7S21210HSR3 Table 6. Test Circuit Component Designations and Values — MRF7S21210HSR3 Part Description Part Number Manufacturer C1, C9, C11, C12, C17, C18 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK C2, C8 100 nF Chip Capacitors 12065C104KAT AVX C3, C7, C10, C13, C14, C16 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C5 5.6 pF Chip Capacitor ATC100B5R6BT500XT ATC C6 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C15 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC C19, C20 470 μF Electrolytic Capacitors 2222 12018471 BC Components R1, R2 10 KΩ, 1/4 W Chip Resistors WCR120610KL Welwyn R3 10 Ω, 1/4 W Chip Resistor 232272461009 Phycomp MRF7S21210HR3 MRF7S21210HSR3 6 RF Device Data Freescale Semiconductor C10 R1 R3 R2 C1 C11 C12 C19 C3 C5 C4 C6 C15 C14 C8 C9 C13 CUT OUT AREA C2 C20 C7 C17 C18 C16 MRF7S21210HS Rev. 0 Figure 4. Test Circuit Component Layout — MRF7S21210HSR3 MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 17 29 28 VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 16 ACPR 27 14 --29 0 --31 --4 IRL --33 12 --35 11 PARC 10 2060 2080 --37 13 2100 2120 2140 2160 2180 2200 --8 --12 --16 --39 2220 --20 --1 --1.2 --1.4 --1.6 --1.8 PARC (dB) Gps, POWER GAIN (dB) 18 15 30 Gps IRL, INPUT RETURN LOSS (dB) 19 ηD, DRAIN EFFICIENCY (%) 31 ηD ACPR (dBc) 20 --2 f, FREQUENCY (MHz) Note: Measurement conducted with device soldered on Freescale test fixture. Figure 5. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) 19 IDQ = 2100 mA 1750 mA 1400 mA 16 1050 mA 15 VDD = 28 Vdc, f = 2140 MHz CW Measurements 700 mA 14 10 1 --20 --30 --40 IM7--L --60 --70 IM3--U IM5--L --50 300 100 IM3--L IM5--U IM7--U 1 10 100 Pout, OUTPUT POWER (WATTS) CW TWO--TONE SPACING (MHz) Figure 6. CW Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Tone Spacing 19 1 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) --1 dB = 48.327 W ACPR 0 ηD --1 --2 --2 dB = 67.216 W --3 dB = 89.144 W 40 --30 30 25 PARC VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --4 --5 --25 35 Gps --3 45 30 50 70 90 110 --35 --40 ACPR (dBc) 17 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1400 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 --10 --45 20 --50 15 --55 130 Pout, OUTPUT POWER (WATTS) Figure 8. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF7S21210HR3 MRF7S21210HSR3 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 85_C 25_C Gps 18 0 50 --10 40 85_C 16 14 --30_C 60 30 25_C TC = --30_C --30_C ACPR 12 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD 10 1 10 100 20 10 --20 ACPR (dBc) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single--Carrier W--CDMA, 3.84 MHz 20 Channel Bandwidth ηD, DRAIN EFFICIENCY (%) 22 --30 --40 --50 0 300 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 20 --4 12 --8 8 --12 S11 4 --16 VDD = 28 Vdc IDQ = 1400 mA 0 1750 1850 1950 2050 2150 S11 (dB) S21 (dB) S21 16 2250 2350 2450 --20 2550 f, FREQUENCY (MHz) Figure 10. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 11. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 12. Single--Carrier W--CDMA Spectrum MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 9 Zo = 5 Ω f = 2220 MHz f = 2220 MHz f = 2060 MHz Zsource Zload f = 2060 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz Zsource Ω Zload Ω 2060 4.34 -- j1.26 1.52 -- j1.46 2080 4.34 -- j1.20 1.47 -- j1.35 2100 4.34 -- j1.14 1.42 -- j1.23 2120 4.33 -- j1.09 1.37 -- j1.11 2140 4.34 -- j1.05 1.32 -- j0.99 2160 4.33 -- j0.96 1.27 -- j0.87 2180 4.33 -- j0.92 1.23 -- j0.75 2200 4.33 -- j0.92 1.19 -- j0.64 2220 4.32 -- j0.87 1.15 -- j0.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance MRF7S21210HR3 MRF7S21210HSR3 10 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 Pout, OUTPUT POWER (dBm) 59 Ideal P3dB = 55.47 dBm (352 W) 58 57 P1dB = 54.61 dBm (289 W) 56 55 Actual 54 53 52 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 2140 MHz 51 50 31 32 33 34 35 36 37 38 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 5.21 -- j0.31 1.23 -- j1.06 Figure 14. Pulsed CW Output Power versus Input Power @ 28 V MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 11 PACKAGE DIMENSIONS MRF7S21210HR3 MRF7S21210HSR3 12 RF Device Data Freescale Semiconductor MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 13 MRF7S21210HR3 MRF7S21210HSR3 14 RF Device Data Freescale Semiconductor MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 15 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2008 • Initial Release of Data Sheet 1 Jan. 2009 • Added MRF7S21210HR3 part to data sheet, p. 1 • Added Fig. 1, Test Circuit Schematic and Microstrip list for MRF7S21210HR3, p. 4 • Added Fig. 2, Test Circuit Component Part Layout for MRF7S21210HR3, p. 5 • Table 6, Test Circuit Component Designations and Values -- MRF7S21210HSR3, changed Part Number and Manufacturer for R1, R2 from CRCW12061002FKEA, Vishay to WCR120610KL, Welwyn and for R3 from CRCW12061000FKEA, Vishay to 232272461009, Phycomp, p. 6 • Added Fig. 11, MTTF versus Junction Temperature, p. 9 • Added 465--06 (NI--780) package isometric, p. 1, and Mechanical Outline, p. 12 2 Mar. 2011 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 • Fig. 11, MTTF versus Junction Temperature removed, p. 9. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. • Fig. 12, CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal and Fig. 13, Single--Carrier W--CDMA Spectrum updated to show the undistorted input test signal, p. 10 (renumbered as Figs. 11 and 12 respectively after Fig. 11 removed) • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 16 MRF7S21210HR3 MRF7S21210HSR3 16 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008--2009, 2011. All rights reserved. MRF7S21210HR3 MRF7S21210HSR3 Document Number:Data MRF7S21210H RF Device Rev. 2, 3/2011 Freescale Semiconductor 17