MRF7S24250NR3

NXP Semiconductors Technical Data Document Number: MRF7S24250N Rev. 1, 9/2016 RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF7S24250N The 250 W CW RF power transistor is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. This device is suitable for use in CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. 2450 MHz, 250 W, 32 V RF POWER LDMOS TRANSISTOR Typical Performance: In 2400–2500 MHz reference circuit, VDD = 32 Vdc Frequency (MHz) Signal Type Pin (W) Gps (dB) D (%) Pout (W) 2400 CW 9.0 14.5 55.5 255 2450 9.0 14.7 54.8 263 2500 9.0 14.3 55.5 242 Result OM--780--2L PLASTIC Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 2450 CW > 10:1 at all Phase Angles 14 (3 dB Overdrive) 32 No Device Degradation Gate 2 1 Drain Features     Characterized with series equivalent large--signal impedance parameters Internally matched for ease of use Qualified up to a maximum of 32 VDD operation Integrated high performance ESD protection Typical Applications      Industrial heating and drying Material welding Plasma lighting Scientific Medical: skin treatment, blood therapy, electrosurgery  2016 NXP B.V. RF Device Data NXP Semiconductors (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections MRF7S24250N 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Total Device Dissipation @ TC = 25C Derate above 25C PD 769 3.85 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 98C, 250 W CW, IDQ = 100 mA, 2450 MHz RJC 0.26 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 53C, 250 W Peak, 100 sec Pulse Width, 10% Duty Cycle, IDQ = 100 mA, 2450 MHz ZJC 0.024 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 2 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 303 Adc) VGS(th) — 1.2 — Vdc Gate Quiescent Voltage (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.1 1.6 2.1 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.7 Adc) VDS(on) — 0.2 — Vdc Crss — 4.3 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (4) Reverse Transfer Capacitance (VDS = 32 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com/RF/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Part internally matched both on input and output. (continued) MRF7S24250N 2 RF Device Data NXP Semiconductors Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NXP Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pin = 9 W Peak (0.9 W Avg.), f = 2450 MHz, 100 sec Pulse Width, 10% Duty Cycle Pout 237 256 319 Drain Efficiency D 48 50 — % Input Return Loss IRL — –15.0 –8.5 dB Output Power W Table 6. Ordering Information Device MRF7S24250NR3 Tape and Reel Information R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel Package OM--780--2L MRF7S24250N RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 30 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc C, CAPACITANCE (pF) 25 20 15 10 5 Crss 0 0 5 10 15 20 25 30 35 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain--Source Voltage MRF7S24250N 4 RF Device Data NXP Semiconductors 2400–2500 MHz REFERENCE CIRCUIT — 2  3 (5.1 cm  7.6 cm) Table 7. 2400–2500 MHz Performance (In NXP Reference Circuit, 50 ohm system) VDD = 32 Vdc, IDQ = 100 mA, TC = 25C Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 2400 9.0 14.5 55.5 255 2450 9.0 14.7 54.8 263 2500 9.0 14.3 55.5 242 Table 8. Load Mismatch/Ruggedness (In NXP Reference Circuit) Frequency (MHz) Signal Type 2450 CW VSWR Pin (W) > 10:1 at all Phase Angles 14 (3 dB Overdrive) Test Voltage, VDD Result 32 No Device Degradation MRF7S24250N RF Device Data NXP Semiconductors 5 2400–2500 MHz REFERENCE CIRCUIT — 2  3 (5.1 cm  7.6 cm) D68993 C6 R1 C2 C3 C1 Q1 C4* C5* C10 C9 C7 C8 MRF7S24250N Rev. 0 *C4 and C5 are mounted vertically. Figure 3. MRF7S24250N Reference Circuit Component Layout — 2400–2500 MHz Table 9. MRF7S24250N Reference Circuit Component Designations and Values — 2400–2500 MHz Part Description Part Number Manufacturer C1, C3, C4, C5, C6, C7, C8 27 pF Chip Capacitors ATC600F270JT250XT ATC C2, C9 10 F Chip Capacitors GRM32ER61H106KA12L Murata C10 220 F, 50 V Electrolytic Capacitor 227CKE050M Illinois Capacitor Q1 RF Power LDMOS Transistor MRF7S24250NR3 NXP R1 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay PCB Rogers RT6035HTC, 0.030, r = 3.66 D68993 MTL MRF7S24250N 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS — 2400–2500 MHz REFERENCE CIRCUIT D 55 14.75 50 Gps 14.5 45 275 14.25 Pout 14 13.75 13.5 2400 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 15 60 D, DRAIN EFFICIENCY (%) 15.25 250 VDD = 32 Vdc Pin = 9.0 W IDQ = 100 mA 225 2460 2440 2420 200 2500 2480 f, FREQUENCY (MHz) Figure 4. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power 150 VDD = 32 Vdc Pin = 9.0 W 250 200 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 300 VDD = 32 Vdc Pin = 4.5 W 150 100 Detail A 50 125 0 0.5 1 1.5 VDD = 32 Vdc Pin = 4.5 W 50 25 f = 2450 MHz 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 2.5 2 75 0 f = 2450 MHz 0 VDD = 32 Vdc Pin = 9.0 W 100 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 5. Output Power versus Gate--Source Voltage 18 Gps, POWER GAIN (dB) 17 D 16 50 2450 MHz 2400 MHz 35 20 5 2450 MHz 14 20 Gps 2400 MHz 12 15 2450 MHz 11 10 65 2500 MHz 15 13 f = 2500 MHz 2400 MHz Pin 11 D, DRAIN EFFICIENCY (%) VDD = 32 Vdc IDQ = 100 mA 10 2500 MHz 100 5 Pin, INPUT POWER (WATTS) 19 0 500 Pout, OUTPUT POWER (WATTS) Figure 6. Power Gain, Drain Efficiency and Input Power versus Output Power and Frequency MRF7S24250N RF Device Data NXP Semiconductors 7 2400–2500 MHz REFERENCE CIRCUIT Zo = 10  Zload f = 2500 MHz f = 2400 MHz Zsource f = 2500 MHz f = 2400 MHz f MHz Zsource  Zload  2400 1.76 – j5.76 1.49 – j2.45 2450 1.66 – j5.50 1.43 – j2.18 2500 1.56 – j5.23 1.36 – j1.90 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 7. Series Equivalent Source and Load Impedance — 2400–2500 MHz MRF7S24250N 8 RF Device Data NXP Semiconductors 2450 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3  5 (7.6 cm  12.7 cm) Table 10. 2450 MHz Narrowband Performance (In NXP Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pin = 9 W Peak (0.9 W Avg.), f = 2450 MHz, 100 sec Pulse Width, 10% Duty Cycle Characteristic Output Power Symbol Min Typ Max Unit W Pout — 256 — Drain Efficiency D — 49.0 — % Input Return Loss IRL — –17 –9 dB MRF7S24250N RF Device Data NXP Semiconductors 9 2450 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3  5 (7.6 cm  12.7 cm) C2 C5 C1 R1 C13 C6 C3 CUT OUT AREA C9 C4 C7 MRF7S24250N Rev. 0 C8 C11 C10 C14 C12 Figure 8. MRF7S24250N Narrowband Test Circuit Component Layout — 2450 MHz Table 11. MRF7S24250N Narrowband Test Circuit Component Designations and Values — 2450 MHz Part Description Part Number Manufacturer C1, C5, C12 10 F Chip Capacitors C5750X7S2A106M230KB TDK C2, C6, C11 3 pF Chip Capacitors ATC100B3R0CT500XT ATC C3 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C4 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C7 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C8 1.5 pF Chip Capacitor ATC100B1R5BT500XT ATC C9. C10 8.2 pF Chip Capacitors ATC100B8R2CT500XT ATC C13, C14 470 F, 100 V Electrolytic Capacitors MCGPR100V477M16X32-RH Multicomp R1 5.9 , 1/4 W Chip Resistor CRCW12065R90FKEA Vishay PCB Taconic RF35, 0.030, r = 3.5 — MTL f MHz Zsource  Zload  2450 1.96 – j5.61 1.55 – j1.76 Zsource = Test circuit impedance as measured from gate to ground. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Zsource 50  Zload Figure 9. Narrowband Series Equivalent Source and Load Impedance — 2450 MHz MRF7S24250N 10 RF Device Data NXP Semiconductors 2X SOLDER PADS 0.800 (20.32) 0.409(1) (10.39) 0.389(1) (9.88) 0.540 (13.72) Inches (mm) 0.815(1) (20.70) 1. Slot dimensions are minimum dimensions and exclude milling tolerances Figure 10. PCB Pad Layout for OM--780--2L MRF7S24250N RF Device Data NXP Semiconductors 11 PACKAGE DIMENSIONS MRF7S24250N 12 RF Device Data NXP Semiconductors MRF7S24250N RF Device Data NXP Semiconductors 13 MRF7S24250N 14 RF Device Data NXP Semiconductors PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices White Paper  RFPLASTICWP: Designing with Plastic RF Power Transistors Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Aug. 2015 1 Sept. 2016 Description  Initial Release of Data Sheet  Table 2, Thermal Characteristics: added Thermal Impedance ZJC data, p. 2  Functional Tests table: table values updated to reflect current test data results. Added Min and Max values, p. 3 MRF7S24250N RF Device Data NXP Semiconductors 15 How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, and the Freescale logo are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2016 NXP B.V. MRF7S24250N Document Number: MRF7S24250N Rev. 1, 9/2016 16 RF Device Data NXP Semiconductors