MRF7S38010HR5

Freescale Semiconductor Technical Data Document Number: MRF7S38010H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38010HR3 MRF7S38010HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to 3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical WiMAX Performance: VDD = 30 Volts, IDQ = 160 mA, Pout = 2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 15 dB Drain Efficiency — 17% Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset — - 49 dBc in 0.5 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW Peak Tuned Output Power • Pout @ 1 dB Compression Point w 10 Watts CW Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 3400 - 3600 MHz, 2 W AVG., 30 V WiMAX LATERAL N - CHANNEL RF POWER MOSFETs CASE 465I - 02, STYLE 1 NI - 400 - 240 MRF7S38010HR3 CASE 465J - 02, STYLE 1 NI - 400S - 240 MRF7S38010HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W CW Case Temperature 77°C, 2 W CW RθJC 2.05 2.24 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRF7S38010HR3 MRF7S38010HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 33.5 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDD = 30 Vdc, ID = 160 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 335 mAdc) VDS(on) 0.1 0.21 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.13 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 68.5 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 50.6 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Gps 13 15 17 dB Drain Efficiency ηD 15 17 30 % PAR 8 8.5 — dB ACPR — - 49 - 46 dBc IRL — - 12 -6 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) MRF7S38010HR3 MRF7S38010HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, Pout = 2 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX Signal, OFDM Single - Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. Mask System Type G @ Pout = 2 W Avg. Mask Point B at 3.5 MHz Offset Point C at 5 MHz Offset Point D at 7.4 MHz Offset Point E at 14 MHz Offset Point F at 17.5 MHz Offset dBc — — — — — - 26 - 38 - 43 - 60 - 60 — — — — — Relative Constellation Error @ Pout = 2 W Avg. (1) RCE — - 33 — dB (1) EVM — 2.3 — % rms Error Vector Magnitude (Typical EVM Performance @ Pout = 2 W Avg. with OFDM 802.16d Signal Call) Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 160 mA, 3400 - 3600 MHz Bandwidth Video Bandwidth @ 12 W PEP Pout where IM3 = - 30 dBc VBW (Tone Spacing from 100 kHz to VBW) — 20 — ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz