Freescale Semiconductor
Technical Data
Document Number: MRF8HP21080H
Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQA = 150 mA, VGSB = 1.1 Vdc, Pout = 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz
14.1
46.7
8.3
--30.6
2140 MHz
14.5
46.2
8.2
--32.1
2170 MHz
14.4
45.7
8.1
--33.6
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 3 dB Compression Point ≃ 100 Watts (1)
Features
• Advanced High Performance In--Package Doherty
• Production Tested in a Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
• NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel option, see p. 13.
MRF8HP21080HR3
MRF8HP21080HSR3
2110--2170 MHz, 16 W AVG., 28 V
W--CDMA, LTE
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465M--01, STYLE 1
NI--780--4
MRF8HP21080HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8HP21080HSR3
Carrier
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
Peaking
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
CW
220
3.3
W
W/°C
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ TC = 25°C
Derate above 25°C
1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8HP21080HR3 MRF8HP21080HSR3
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Case Temperature 77°C, 16 W CW, 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc, 2170 MHz
Case Temperature 81°C, 80 W CW(3), 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc, 2170 MHz
RθJC
Value (1,2)
1.0
0.61
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.1
2.0
2.6
Gate Quiescent Voltage
(VDD = 28 Vdc, IDA = 150 mA, Measured in Functional Test)
VGS(Q)
2.0
2.7
3.5
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.5 Adc)
VDS(on)
0.1
0.24
0.3
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 75 μAdc)
VGS(th)
1.2
2.0
2.7
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
0.1
0.24
0.3
Characteristic
Off Characteristics
(4)
On Characteristics -- Side A (4)
On Characteristics -- Side B (4)
Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc, Pout = 16 W Avg.,
f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
13.8
14.4
16.8
Drain Efficiency
ηD
42.4
45.7
—
PAR
7.3
8.1
—
ACPR
—
--33.6
--28.9
IRL
—
--17
--9
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Doherty configuration.
(continued)
MRF8HP21080HR3 MRF8HP21080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Typical Broadband Performance (1) — (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc,
Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz
14.1
46.7
8.3
--30.6
--17
2140 MHz
14.5
46.2
8.2
--32.1
--17
2170 MHz
14.4
45.7
8.1
--33.6
--18
Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc,
2110--2170 MHz Bandwidth
Characteristic
Pout @ 1 dB Compression Point, CW
Symbol
Min
Typ
Max
Unit
P1dB
—
60
—
W
(2)
P3dB
—
100
—
W
IMD Symmetry @ 10 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
40
—
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
78
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout = 16 W Avg.
GF
—
0.4
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.012
—
dB/°C
∆P1dB
—
0.01
—
dB/°C
Pout @ 3 dB Compression Point
Output Power Variation over Temperature
(--30°C to +85°C)
MHz
1. Measurement made with device in a Doherty configuration.
2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
3
R2
VGSA
C22
B1
VDSA
C3
C15
C5 C9
C13
R4
C1
C11
C12
C2
R5
C6
R3
C19
C20
P
C14
MRF8HP21080
Rev. 4
C18
C10
C16
C4
VGSB
C21
C
CUT OUT AREA
C7
C8
R1
C17
B2
C23
VDSB
*C7, C8, C19 and C20 are mounted vertically.
Figure 2. MRF8HP21080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8HP21080HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1, B2
30 Ω Ferrite Beads
MPZ2012S300A
TDK
C1, C2
1.6 pF Chip Capacitors
ATC100B1R6BT500XT
ATC
C3, C4, C5, C6, C15, C16,
C17, C18
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7*, C8*, C9, C10, C13,
C14, C19*, C20*
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C11
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C12
1.5 pF Chip Capacitor
ATC100B1R5BT500XT
ATC
C21
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
C22,C23
220 μF, 50 V Electrolytic Capacitors
227CKS050M
Illinois Capacitor
R1
100 Ω, 4 W Chip Resistor
CW12010T0100GBK
ATC
R2, R3
20 kΩ, 1/4 W Chip Resistors
CRCW120620K0JNEA
Vishay
R4, R5
3 Ω, 1/4 W Chip Resistors
CRCW12063R00FKEA
Vishay
PCB
0.030″, εr = 3.5
R04350
Rogers
MRF8HP21080HR3 MRF8HP21080HSR3
4
RF Device Data
Freescale Semiconductor
48
15.6
46
44
ηD
VDD = 28 Vdc, Pout = 16 W (Avg.)
IDQA = 150 mA
VGSB = 1.1 Vdc
14.4
14
42
40
Gps
PARC
13.6
--26
--1.6
--28
--1.8
13.2
--30
12.8
--32
Single--Carrier W--CDMA
ACPR
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
12.4
12
2060
2080
2100
2120
2140
2160
2180
--34
ACPR (dBc)
Gps, POWER GAIN (dB)
15.2
14.8
--2
--2.2
--2.4
--36
2220
2200
PARC (dB)
16
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--2.6
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 16 Watts Avg.
--20
VDD = 28 Vdc, Pout = 10 W (PEP)
IDQA = 150 mA, VGSB = 1.1 Vdc
--30
IM3--U
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency
of 2140 MHz
--40
IM3--L
IM5--L
IM5--U
--50
IM7--U
--60
IM7--L
--70
1
10
100
TWO--TONE SPACING (MHz)
14.8
0
14.6
14.4
14.2
14
13.8
VDD = 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc
f = 2140 MHz, Single--Carrier W--CDMA
ηD
--1
--2 dB = 17 W
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
5
10
15
50
--20
20
30
20
--3 dB = 22 W
--4
--5
ACPR
--1 dB = 12 W
--3
--15
40
Gps
--2
60
--25
--30
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
15
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
--35
10
--40
0
--45
PARC
25
30
Pout, OUTPUT POWER (WATTS)
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
15
14
ACPR
2140 MHz
13
2110 MHz
2170 MHz
2140 MHz
2110 MHz
12
2170 MHz
--10
1
40
30
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
10
60
50
2140 MHz
11
0
ηD
2170 MHz
Gps
70
10
20
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQA = 150 mA, VGSB = 1.1 Vdc
Single--Carrier W--CDMA
ηD, DRAIN EFFICIENCY (%)
16
--50
10
100
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
18
15
GAIN (dB)
12
9
VDD = 28 Vdc
Pin = 0 dBm
IDQA = 150 mA
VGSB = 1.1 Vdc
6
3
0
1950
2000
2050
2100
2150
2200
2250
2300
2350
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
2
4
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
8
10
PEAK--TO--AVERAGE (dB)
Figure 8. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
12
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 9. Single--Carrier W--CDMA Spectrum
MRF8HP21080HR3 MRF8HP21080HSR3
6
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQA = 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.97 -- j14.8
6.61 -- j11.5
47.2
53
57.1
48.0
63
57.4
2140
7.61 -- j17.9
6.33 -- j12.0
47.1
51
55.7
48.0
63
56.0
2170
6.68 -- j18.7
6.41 -- j11.2
46.9
49
54.5
47.9
62
56.1
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 10. Carrier Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQA = 150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
6.97 -- j14.8
14.3 -- j9.22
45.6
36
65.1
46.7
47
65.9
2140
7.61 -- j17.9
14.4 -- j9.52
45.5
36
64.2
46.7
47
65.1
2170
6.68 -- j18.7
13.8 -- j8.09
45.6
36
63.9
46.6
46
65.9
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 11. Carrier Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
7
VDD = 28 Vdc, VGSB = 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
4.73 -- j9.34
3.70 -- j6.50
48.6
72
60.2
49.3
85
61.1
2140
6.50 -- j11.3
3.39 -- j6.80
48.7
74
59.7
49.4
87
59.5
2170
7.08 -- j13.3
3.30 -- j7.10
48.6
72
59.1
49.4
87
59.0
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 12. Peaking Side Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, VGSB = 1.1 Vdc, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
2110
4.73 -- j9.34
8.22 -- j9.10
46.7
47
70.6
47.5
56
70.5
2140
6.50 --j11.3
9.00 -- j8.20
46.6
46
71.0
47.4
55
70.4
2170
7.08 -- j13.3
9.10 -- j7.55
46.4
44
69.6
47.9
62
69.0
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Z
source
Z
load
Figure 13. Peaking Side Load Pull Performance — Maximum Efficiency Tuning
MRF8HP21080HR3 MRF8HP21080HSR3
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
9
MRF8HP21080HR3 MRF8HP21080HSR3
10
RF Device Data
Freescale Semiconductor
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
11
MRF8HP21080HR3 MRF8HP21080HSR3
12
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF8HP21080H and MRF8HP21080HS parts will be available for 2 years after release of
MRF8HP21080H and MRF8HP21080HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF8HP21080H and MRF8HP21080HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
June 2011
Description
• Initial Release of Data Sheet
MRF8HP21080HR3 MRF8HP21080HSR3
RF Device Data
Freescale Semiconductor
13
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
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© Freescale Semiconductor, Inc. 2011. All rights reserved.
MRF8HP21080HR3 MRF8HP21080HSR3
Document Number: MRF8HP21080H
Rev. 0, 6/2011
14
RF Device Data
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