MRF8P20161HSR3

Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.5 46.2 6.9 --27.9 1900 MHz 16.5 46.0 6.9 --29.1 1920 MHz 16.4 45.8 7.0 --30.4 • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1900 MHz, 142 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 147 Watts CW Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. MRF8P20161HSR3 1880--1920 MHz, 37 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET CASE 465H--02, STYLE 1 NI--780S--4 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C CW 206 1.86 W W/°C Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case Case Temperature 74°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.6 V, 1900 MHz Case Temperature 93°C, 160 W CW(4), 28 Vdc, IDQA = 550 mA, VGSB = 1.6 V, 1900 MHz RθJC CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics 0.76 0.53 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8P20161HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 116 μAdc) VGS(th) 1.2 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.7 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.27 0.4 Vdc Characteristic Off Characteristics (1) On Characteristics (1) Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., f = 1920 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 15.0 16.4 18.0 dB Drain Efficiency ηD 42.2 45.8 — % PAR 6.5 7.0 — dB ACPR — --30.4 --27.3 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio (3) Typical Broadband Performance (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1880 MHz 16.5 46.2 6.9 --27.9 1900 MHz 16.5 46.0 6.9 --29.1 1920 MHz 16.4 45.8 7.0 --30.4 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in a Symmetrical Doherty configuration. (continued) MRF8P20161HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performance (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc, 1880--1920 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 97 — W Pout @ 3 dB Compression Point, CW P3dB — 147 — W — 55 — IMD Symmetry @ 30 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 65 — MHz Gain Flatness in 40 MHz Bandwidth @ Pout = 37 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.01 — dB/°C ∆P1dB — 0.009 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz 1. Measurement made with device in a Symmetrical Doherty configuration. MRF8P20161HSR3 RF Device Data Freescale Semiconductor 3 VGA C10 C20 C22 C8 Z1 C1 R1 C2 C18 C16 CUT OUT AREA C3 C5 C24 VDA R2 C6 C4 C C14 C15 P C12 C26 C13 C17 R3 C7 C11 C19 C9 VDB C25 MRF8P20160H Rev. 1 C21 C23 VGB Figure 2. MRF8P20161HSR3 Test Circuit Component Layout Table 5. MRF8P20161HSR3 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C12, C13 10 pF Chip Capacitors ATC600F100JT250XT ATC C3 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C4, C5 1.1 pF Chip Capacitors ATC600F1R1BT250XT ATC C6, C7, C18, C19 12 pF Chip Capacitors ATC600F120JT250XT ATC C8, C9, C20, C21, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10, C11 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C14, C15 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC C16, C17 2.2 pF Chip Capacitors ATC600F2R2BT250XT ATC C24, C25 220 μF, 50 V Electrolytic Capacitors 227CKS505M Illinois Cap C26 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC R1 50 Ω, 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 8.25 Ω, 1/4 W Chip Resistors CRCW12068R25FKEA Vishay Z1 1900 MHz Band 90°, 3 dB Chip Hybrid Coupler GCS351--HYB1900 Soshin PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P20161HSR3 4 RF Device Data Freescale Semiconductor Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P20161HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Gps 16.4 16.2 43 42 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 16.3 44 PARC IRL --25 --18 --26.2 --20 16.1 --27.4 16 --28.6 15.9 ACPR 15.8 1860 1870 1880 1890 1900 1910 1920 1930 --29.8 --31 1940 --22 --24 --26 --28 --3 --3.2 --3.4 --3.6 --3.8 PARC (dB) 16.6 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA V = 1.6 Vdc, Single--Carrier W--CDMA 16.5 GSB 45 IRL, INPUT RETURN LOSS (dB) ηD ηD, DRAIN EFFICIENCY (%) 46 ACPR (dBc) Gps, POWER GAIN (dB) 16.8 16.7 --4 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg. --10 VDD = 28 Vdc, Pout = 30 W (PEP) IDQA = 550 mA, VGSB = 1.6 Vdc, Two--Tone Measurements --20 (f1 + f2)/2 = Center Frequency of 1900 MHz IM3--U --30 IM3--L IM5--L --40 --60 IM5--U IM7--L --50 IM7--U 1 10 100 TWO--TONE SPACING (MHz) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing ηD Gps, POWER GAIN (dB) 16 15 14 13 12 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) --1 dB = 16 W 17 --1 --2 dB = 24.5 W --2 VDD = 28 Vdc Input Signal PAR = 9.9 dB IDQA = 550 mA @ 0.01% Probability on CCDF VGSB = 1.6 Vdc f = 1900 MHz PARC Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth --5 10 30 50 70 50 --20 30 --3 dB = 34.5 W --4 --15 40 Gps --3 --6 ACPR 60 90 20 --25 --30 ACPR (dBc) 0 ηD, DRAIN EFFICIENCY (%) 18 --35 10 --40 0 --45 110 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P20161HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 ACPR 1920 MHz 1900 MHz 15 1900 MHz 1880 MHz 13 1920 MHz 50 --10 40 20 Gps 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 12 0 30 1880 MHz 14 60 1 10 0 300 100 --20 --30 --40 ACPR (dBc) 17 Gps, POWER GAIN (dB) ηD VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.6 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ηD, DRAIN EFFICIENCY (%) 18 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 Gain --10 15 --20 IRL --30 9 6 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.6 Vdc 3 0 1750 1800 1850 1900 1950 2000 2050 2100 2150 IRL (dB) GAIN (dB) 12 --40 --50 --60 2200 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W--CDMA TEST SIGNAL 10 100 0 --10 --30 Input Signal 0.1 0.01 0 2 4 6 --40 --50 --60 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF8P20161HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQA = 550 mA Max Pout (1) f MHz Watts dBm Zsource Ω Zload Ω 1880 103 50.1 8.74 -- j9.81 2.08 -- j5.64 1930 108 50.3 13.6 -- j9.01 2.29 -- j5.66 1990 107 50.3 17.6 + j0.07 1.52 -- j5.96 2025 105 50.2 14.6 + j4.42 1.75 -- j5.54 (1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Output Matching Network Device Under Test Input Matching Network Z Z source load Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 550 mA f MHz Max Eff. (1) % Zsource Ω Zload Ω 1880 62.7 8.74 -- j9.81 3.61 -- j2.84 1930 66.2 13.6 -- j9.01 3.84 -- j4.10 1990 63.5 17.6 + j0.07 3.02 -- j5.11 2025 64.1 14.6 + j4.42 3.30 -- j4.36 (1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P20161HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 56 Ideal Pout, OUTPUT POWER (dBm) 55 54 1930 MHz 53 1930 MHz 52 51 Actual 50 49 48 1990 MHz 2025 MHz 1880 MHz 47 46 45 28 29 30 31 34 33 32 35 1990 MHz 1880 MHz 2025 MHz 36 37 38 39 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 1880 102 50.1 126 51.0 1930 108 50.3 130 51.1 1990 105 50.2 129 51.1 2025 105 50.2 124 50.9 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 1880 P1dB 8.74 -- j9.81 2.08 -- j5.64 1930 P1dB 13.6 -- j9.01 2.29 -- j5.66 1990 P1dB 17.6 + j0.07 1.52 -- j5.96 2025 P1dB 14.6 + j4.42 1.75 -- j5.54 Figure 13. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P20161HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8P20161HSR3 10 RF Device Data Freescale Semiconductor MRF8P20161HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Oct. 2010 Description • Initial Release of Data Sheet MRF8P20161HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P20161HSR3 Document Number: RF Device Data MRF8P20161HS Rev. 0, 10/2010 Freescale Semiconductor 13