MRF8P20165WHR5

Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1930 MHz 16.1 47.0 7.1 --27.7 1960 MHz 16.3 47.7 7.1 --29.7 1995 MHz 16.3 46.0 7.0 --33.3 1930--1995 MHz, 37 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 173 Watts CW Output Power (2 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 190 Watts (1) Features • Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 100 MHz. • Designed for Wideband Applications that Require 65 MHz Signal Bandwidth • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. CASE 465M--01, STYLE 1 NI--780--4 MRF8P20165WHR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF8P20165WHSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 125 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (2) RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 80°C, 37 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz Case Temperature 114°C, 160 W CW, 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1960 MHz RθJC Value (3) 0.79 0.53 Unit °C/W 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 2. Continuous use at maximum temperature will affect MTTF. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF8P20165WHR3 MRF8P20165WHSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) B (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 5 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 232 μAdc) VGS(th) 1.2 1.8 2.7 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 550 mAdc, Measured in Functional Test) VGS(Q) 2.0 2.7 3.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 1.5 Adc) VDS(on) 0.05 0.2 0.3 Vdc Characteristic Off Characteristics (1) On Characteristics (2) Functional Tests (2,3,4) (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 W Avg., f1 = 1980 MHz, f2 = 2010 MHz, 2--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 14.2 14.8 17.2 dB Drain Efficiency ηD 40.6 44.3 — % PAR 5.2 5.8 — dB ACPR — --31.0 --28.7 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Performance (4) Typical Broadband — (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 1. 2. 3. 4. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 1930 MHz 16.1 47.0 7.1 --27.7 1960 MHz 16.3 47.7 7.1 --29.7 1995 MHz 16.3 46.0 7.0 --33.3 Side A and Side B are tied together for this measurement. VDDA and VDDB must be tied together and powered by a single DC power supply. Part internally matched both on input and output. Measurement made with device in a Symmetrical Doherty configuration. (continued) MRF8P20165WHR3 MRF8P20165WHSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, 1930--1995 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 104 — W Pout @ 3 dB Compression Point (2) P3dB — 190 — W — 20 — IMD Symmetry @ 74 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 100 — MHz Gain Flatness in 65 MHz Bandwidth @ Pout = 37 W Avg. GF — 0.2 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.017 — dB/°C ∆P1dB — 0.01 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) MHz 1. Measurement made with device in a Symmetrical Doherty configuration. 2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 3 VGGA C22 C8 C10 R2 C14 C1 C3 Z1 C4 C2 R3 C11 C28 C18 CUT OUT AREA R1 VDDA C24 C6 C7 C9 C C15 C16 P C30 C12 C13 C19 C29 C25 VDDB C26 C27 C23 MRF8P20165W Rev. 1 VGGB Note 1: Component numbers C5, C17, C20 and C21 are not used. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply. Figure 2. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Layout Table 5. MRF8P20165WHR3(WHSR3) Production Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C6, C7, C12, C13 15 pF Chip Capacitors ATC600F150JT250XT ATC C3, C4 1.8 pF Chip Capacitors ATC600F1R8BT250XT ATC C8, C9, C24, C25 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10, C11 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C14 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C15, C16 1.0 pF Chip Capacitors ATC600F1R0BT250XT ATC C18, C19 2.0 pF Chip Capacitors ATC600F2R0BT250XT ATC C22, C23 18 pF Chip Capacitors ATC600F180JT250XT ATC C26, C27 0.1 pF Chip Capacitors ATC600F0R1BT250XT ATC C28, C29 220 μF, 50 V Electrolytic Capacitors 227CKS050M Illinois Capacitor C30 0.8 pF Chip Capacitor ATC600F0R8BT250XT ATC R1 50 Ω, 4 W Chip Resistor CW12010T0050GBK ATC R2, R3 2.37 Ω, 1/4 W Chip Resistors CRCW12062R37FNEA Vishay Z1 1750 MHz Band 90°, 3 dB Hybrid Coupler GSC351--HYB1900 Soshin PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P20165WHR3 MRF8P20165WHSR3 4 RF Device Data Freescale Semiconductor VGGA C25 C7 C21 C19 R1 C10 C5 C1 C11 C Z1 R3 C13 C2 C4 C27 C29 C12 C17 C30 P C14 C18 C15 C6 C16 R2 C8 VGGB C23 C9 C3 VDDA C28 C24 C20 C22 C26 VDDB MRF8P20165W Rev. 0 Note: VDDA and VDDB must be tied together and powered by a single DC power supply. Figure 3. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Layout Table 6. MRF8P20165WHR3(WHSR3) Characterization Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 1.6 pF Chip Capacitor ATC600S1R6BT250XT ATC C2 1.8 pF Chip Capacitor ATC600S1R8BT250XT ATC C3, C4, C5, C6, C21, C22 C29, C30 10 pF Chip Capacitors ATC600S100JT250XT ATC C7, C8, C23, C24 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C9, C11, C13, C15 2.7 pF Chip Capacitors ATC600S2R7BT250XT ATC C10, C12, C14, C16, C17 1 pF Chip Capacitors ATC600S1R0BT250XT ATC C18, C28 0.6 pF Chip Capacitors ATC600S0R6BT250XT ATC C19, C20 1.5 pF Chip Capacitors ATC600S1R5BT250XT ATC C25, C26 330 μF, 35 V Electrolytic Capacitors MCGPR35V337M10X16--RH Multicomp C27 0.5 pF Chip Capacitor ATC600S0R5BT250XT ATC R1, R2 2.37 Ω, 1/4 W Chip Resistors CRCW12062R37FNEA Vishay R3 51 Ω, 1/4 W Chip Resistor CRCW120651R0FKEA Vishay Z1 1900 MHz Band 90°, 3 dB Hybrid Coupler GSC351--HYB1900 Soshin PCB 0.030″, εr = 3.48 RO4350 Rogers MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 5 Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 4. Possible Circuit Topologies MRF8P20165WHR3 MRF8P20165WHSR3 6 RF Device Data Freescale Semiconductor 48 ηD 17 16 30 MHz Carrier Spacing, Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 15 14 13 Gps PARC 11 10 1880 1920 1940 1960 1980 --27 --2.5 --21 --29 --2.75 --22 --33 --35 IM3 1900 44 --31 ACPR 12 46 2000 --37 2040 2020 --3 --3.25 --3.5 --23 --24 --25 --26 --3.75 IM3, THIRD ORDER INTERMODULATION (dBc) 50 PARC (dB) 18 Gps, POWER GAIN (dB) 52 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 19 ACPR (dBc) 20 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) 52 19 50 ηD 46 17 Gps 48 16 44 15 --26 --2.5 14 --28 --2.75 --30 PARC 13 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 12 11 10 1880 1900 1920 1940 1960 --32 ACPR --34 1980 2000 2020 ACPR (dBc) Gps, POWER GAIN (dB) 18 VDD = 28 Vdc, Pout = 37 W (Avg.), IDQA = 550 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --36 2040 --3 --3.25 --3.5 PARC (dB) 20 ηD, DRAIN EFFICIENCY (%) Figure 5. 2--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg. --3.75 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 6. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 37 Watts Avg. --10 VDD = 28 Vdc, Pout = 74 W (PEP), IDQA = 550 mA, VGSB = 1.3 Vdc Two--Tone Measurements, (f1 + f2)/2 = Center --20 Frequency of 1960 MHz IM3--L IM3--U --30 IM5--L IM5--U --40 IM7--L IM7--U --50 --60 1 10 100 200 TWO--TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Two--Tone Spacing MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 7 17 0 16.5 16 15.5 15 14.5 VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc f = 1960 MHz, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth --10 50 --15 ηD --1 40 Gps --2 ACPR 30 --1 dB = 17 W --2 dB = 28 W --3 20 PARC --3 dB = 39 W --4 --5 60 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 10 20 30 50 40 --20 --25 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 17.5 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS --30 10 --35 0 --40 60 0 60 Pout, OUTPUT POWER (WATTS) Figure 8. Output Peak--to--Average Ratio Compression (PARC) versus Output Power Gps, POWER GAIN (dB) 17 16 Gps ηD 1930 MHz 15 1960 MHz 1995 MHz 14 13 1930 MHz 50 1960 MHz 1995 MHz 40 ACPR 1995 MHz 1930 MHz 1960 MHz 20 10 Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 12 1 30 10 100 --10 0 200 --20 --30 --40 ACPR (dBc) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth ηD, DRAIN EFFICIENCY (%) 18 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power Gps, POWER GAIN (dB) 17 Gps 16 IM5--L IM5--U 15 13 IM7--L 1 --20 15 --30 12 --50 IM3--L 12 18 --40 IM3--U 14 --10 Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF IM7--U 10 100 --60 --70 200 GAIN (dB) VDD = 28 Vdc, IDQA = 550 mA, VGSB = 1.3 Vdc, f1 = 1945 MHz f2 = 1975 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth IM3, IM5, IM7 (dBc) 18 9 VDD = 28 Vdc Pin = 0 dBm IDQA = 550 mA VGSB = 1.3 Vdc 6 3 0 1800 1835 1870 1905 1940 1975 2010 2045 Pout, OUTPUT POWER (WATTS) AVG. f, FREQUENCY (MHz) Figure 10. 2--Carrier W--CDMA Power Gain, IM3, IM5, IM7 versus Output Power Figure 11. Broadband Frequency Response 2080 MRF8P20165WHR3 MRF8P20165WHSR3 8 RF Device Data Freescale Semiconductor W--CDMA TEST SIGNAL --20 100 --40 --50 1 --60 Input Signal (dB) PROBABILITY (%) 10 0.1 --70 --80 0.01 --90 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.8 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --30 0 2 4 6 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --100 --110 8 10 --120 --75 12 --60 --45 0 15 30 45 60 75 Figure 13. 2-Carrier W-CDMA Spectrum Figure 12. CCDF W--CDMA IQ Magnitude Clipping, 2--Carrier Test Signal 100 10 0 10 --10 3.84 MHz Channel BW --20 1 Input Signal --30 0.1 (dB) PROBABILITY (%) --15 f, FREQUENCY (MHz) PEAK--TO--AVERAGE (dB) 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 0.001 0.0001 --30 +IM3 in 3.84 MHz BW 0 2 4 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 8 10 PEAK--TO--AVERAGE (dB) Figure 14. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 12 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 15. Single--Carrier W--CDMA Spectrum MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 9 VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Output Power P1dB P3dB f (MHz) Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 1930 16.0 -- j8.99 1.58 -- j5.68 50.4 110 55.3 51.2 132 55.8 1960 17.2 -- j2.43 1.55 -- j6.08 50.4 110 54.4 51.3 135 53.5 1990 18.6 + j3.55 1.93 -- j5.82 50.4 110 54.4 51.2 132 55.4 (1) Load impedance for optimum P1dB power. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 16. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle Max Drain Efficiency P1dB P3dB Zsource (Ω) Zload (1) (Ω) (dBm) (W) ηD (%) (dBm) (W) ηD (%) 1930 16.0-- j8.99 3.45 -- j3.43 48.5 71 65.8 49.6 91 66.5 1960 17.2 -- j2.43 3.68 -- j3.88 48.7 74 65.6 49.6 91 66.1 1990 18.6 + j3.55 2.95-- j3.99 48.2 66 65.1 49.6 91 65.3 f (MHz) (1) Load impedance for optimum P1dB efficiency. Zsource = Impedance as measured from gate contact to ground. Zload = Impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 17. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P20165WHR3 MRF8P20165WHSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 11 MRF8P20165WHR3 MRF8P20165WHSR3 12 RF Device Data Freescale Semiconductor MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 13 MRF8P20165WHR3 MRF8P20165WHSR3 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, Software and Tools to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P20165WH and MRF8P20165WHS parts will be available for 2 years after release of MRF8P20165WH and MRF8P20165WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P20165WH and MRF8P20165WHS in the R3 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2011 Description • Initial Release of Data Sheet MRF8P20165WHR3 MRF8P20165WHSR3 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P20165WHR3 MRF8P20165WHSR3 Document Number: MRF8P20165WH Rev. 0, 4/2011 16 RF Device Data Freescale Semiconductor