MRF8P23080HSR3

Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2300 MHz 14.6 42.0 6.7 --29.5 2350 MHz 14.7 41.6 6.8 --31.5 2400 MHz 14.6 41.4 6.6 --32.5 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 3 dB Compression Point ≃ 100 Watts CW Features • Production Tested in a Symmetrical Doherty Configuration • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. • NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. MRF8P23080HR3 MRF8P23080HSR3 2300--2400 MHz, 16 W AVG., 28 V W--CDMA, LTE LATERAL N--CHANNEL RF POWER MOSFETs CASE 465M--01, STYLE 1 NI--780--4 MRF8P23080HR3 CASE 465H--02, STYLE 1 NI--780S--4 MRF8P23080HSR3 RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 150 °C TJ 225 °C CW 168 2.39 W W/°C Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25°C Derate above 25°C 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8P23080HR3 MRF8P23080HSR3 1 Table 2. Thermal Characteristics Characteristic Value (1,2) Symbol Thermal Resistance, Junction to Case Case Temperature 72°C, 16 W CW, 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz Case Temperature 80°C, 80 W CW(3), 28 Vdc, IDQA = 280 mA, VGSB = 0.7 V, 2300 MHz RθJC 0.89 0.55 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 75 μAdc) VGS(th) 1.0 1.8 2.5 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, IDA = 280 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.6 3.4 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 0.75 Adc) VDS(on) 0.1 0.23 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics (4) Functional Tests (5,6) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 W Avg., f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured on 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 13.5 14.6 18.5 dB Drain Efficiency ηD 38.0 42.0 — % PAR 6.0 6.7 — dB ACPR — --29.5 --27.0 dBc Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio (6) (In Typical Broadband Performance Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, Pout = 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2300 MHz 14.6 42.0 6.7 --29.5 2350 MHz 14.7 41.6 6.8 --31.5 2400 MHz 14.6 41.4 6.6 --32.5 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Each side of device measured separately. 5. Part internally matched both on input and output. 6. Measurement made with device in a Symmetrical Doherty configuration (continued) MRF8P23080HR3 MRF8P23080HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (1) (In Freescale Doherty Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, 2300--2400 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 55 — W Pout @ 3 dB Compression Point, CW P3dB — 100 — W — 30 — IMD Symmetry @ 20 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 55 — MHz Gain Flatness in 100 MHz Bandwidth @ Pout = 16 W Avg. GF — 0.1 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.013 — dB/°C ∆P1dB — 0.005 — dB/°C Output Power Variation over Temperature (--30°C to +85°C) (2) MHz 1. Measurement made with device in a Symmetrical Doherty configuration. 2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 3 C6 C18 C5 C15 VDA C17 C VGA C16 C2 C3 Z1 C9 R1 MRF8P23080H Rev. 1 C1 C7 C8 CUT OUT AREA C4 C13 C14 C20 C19 C10 VGB C22 P C12 C11 C23 C21 VDB C24 Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C7 0.8 pF Chip Capacitors ATC600F0R8JT250XT ATC C2, C8, C13, C19 1.0 pF Chip Capacitors ATC600F1R0JT250XT ATC C3, C9 18 pF Chip Capacitors ATC600F180JT250XT ATC C4, C5, C10, C11 8.2 pF Chip Capacitors ATC600F8R2JT250XT ATC C6, C12, C16, C22 1.0 μF, 50 V Chip Capacitors GRM21BR71H105KA12L Murata C14, C20 10 pF Chip Capacitors ATC600F100JT250XT ATC C15, C21 5.6 pF Chip Capacitors ATC600F5R6JT250XT ATC C17, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C18, C24 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1 50 Ω, 1/4 W Chip Resistor CRCW120650R0FKEA Vishay Z1 2500 MHz Band 90°, 3 dB Chip Hybrid Coupler GSC356--HYB2500 Soshin PCB 0.020″, εr = 3.5 RO4350B Rogers MRF8P23080HR3 MRF8P23080HSR3 4 RF Device Data Freescale Semiconductor Single--ended λ 4 λ Quadrature combined 4 λ 4 λ λ 2 2 Doherty Push--pull Figure 3. Possible Circuit Topologies MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 43 42 41 14.7 Gps 14.6 40 14.5 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 14.4 14.3 0 --28 --0.5 --30 PARC ACPR 14.2 --26 --32 --34 14.1 14 2290 2305 2320 2335 2350 2365 2380 2395 --36 2410 --1 --1.5 --2 PARC (dB) Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%) ηD 14.8 44 VDD = 28 Vdc, Pout = 16 W (Avg.), IDQA = 280 mA VGSB = 0.7 Vdc, Single--Carrier W--CDMA ACPR (dBc) 15 14.9 --2.5 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 16 Watts Avg. --20 VDD = 28 Vdc, Pout = 20 W (PEP) IDQA = 280 mA, VGSB = 0.7 Vdc --30 IM3--U Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz --40 IM3--L IM5--U IM5--L --50 IM7--U --60 --70 IM7--L 1 10 100 TWO--TONE SPACING (MHz) 16 0 15 14 13 12 11 VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc, f = 2350 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF ηD --1 --2 --5 Gps PARC 10 20 --24 40 --3 dB = 37.5 W --4 55 45 --2 dB = 27.5 W --3 --22 50 ACPR --1 dB = 18.6 W 60 30 40 50 --26 --28 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing --30 35 --32 30 --34 60 Pout, OUTPUT POWER (WATTS) Figure 6. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8P23080HR3 MRF8P23080HSR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) ηD 2400 MHz 14 2350 MHz 13 2300 MHz ACPR 2300 MHz 12 60 0 50 --10 40 30 2350 MHz 2400 MHz 11 20 VDD = 28 Vdc, IDQA = 280 mA, VGSB = 0.7 Vdc Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 9 1 10 10 0 100 --20 --30 --40 ACPR (dBc) Gps ηD, DRAIN EFFICIENCY (%) 15 --50 --60 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 18 15 Gain GAIN (dB) 12 9 6 VDD = 28 Vdc Pin = 0 dBm IDQA = 280 mA VGSB = 0.7 Vdc 3 0 2050 2125 2200 2275 2350 2425 2500 2575 2650 f, FREQUENCY (MHz) Figure 8. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 10. Single--Carrier W--CDMA Spectrum MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 7 VDD = 28 Vdc, IDQA = 280 mA Max Pout (1) f MHz Watts dBm Zsource Ω Zload Ω 2300 58 47.6 8.42 -- j14.3 3.51 -- j5.02 2350 55 47.4 11.4 -- j13.4 3.75 -- j5.03 2400 55 47.4 17.7 -- j9.34 3.14 -- j5.63 (1) Maximum output power measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z Z source load Figure 11. Carrier Side Load Pull Performance — Maximum P1dB Tuning VDD = 28 Vdc, IDQA = 280 mA f MHz Max Eff. (1) % Zsource Ω Zload Ω 2300 60.9 8.41 -- j14.3 7.02 -- j3.44 2350 60.1 11.4 -- j13.4 6.84 -- j2.41 2400 60.0 17.7 -- j9.35 6.53 -- j2.92 (1) Maximum efficiency measurement reflects pulsed 1 dB gain compression. Zsource = Test circuit impedance as measured from gate contact to ground. Zload = Test circuit impedance as measured from drain contact to ground. Input Load Pull Tuner Output Load Pull Tuner Device Under Test Z source Z load Figure 12. Carrier Side Load Pull Performance — Maximum Efficiency Tuning MRF8P23080HR3 MRF8P23080HSR3 8 RF Device Data Freescale Semiconductor ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQA = 280 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 54.5 Ideal Pout, OUTPUT POWER (dBm) 53 51.5 50 Actual 48.5 47 45.5 2400 MHz 2350 MHz 2350 MHz 44 42.5 2400 MHz 2300 MHz 2300 MHz 41 39.5 38 21 22.5 24 25.5 30 28.5 27 31.5 34.5 33 36 37.5 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2300 59 47.7 69 48.4 2350 58 47.6 68 48.3 2400 54 47.3 68 48.3 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 8.40 -- j14.3 3.60 -- j5.30 2300 P1dB 2350 P1dB 11.4 -- j13.4 3.70 -- j5.20 2400 P1dB 17.7 -- j9.30 3.10 -- j5.10 Figure 11. Pulsed CW Output Power versus Input Power @ 28 V NOTE: Measurement made on the Class AB, carrier side of the device. MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 9 PACKAGE DIMENSIONS MRF8P23080HR3 MRF8P23080HSR3 10 RF Device Data Freescale Semiconductor MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 11 MRF8P23080HR3 MRF8P23080HSR3 12 RF Device Data Freescale Semiconductor MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2010 • Initial Release of Data Sheet 1 Nov. 2010 • Updated frequency in overview paragraph from “2300 to 2400 MHz” to “2300 to 2620 MHz” to show the broadband performance of the part, p. 1 • In Table 2, Thermal Characteristics, Pout = 16 W CW thermal resistance value changed from 0.91 to 0.89_C/W and Pout = 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal values now reflect the use of the combined dissipated power from the carrier amplifier and peaking amplifier, p. 2. • Broadband IRL data removed from Fig. 4, Output Peak--to--Average Ratio Compression (PARC) Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of product performance due to circuit implementation, p. 6, 7. MRF8P23080HR3 MRF8P23080HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8P23080HR3 MRF8P23080HSR3 Document Number: RF Device Data MRF8P23080H Rev. 1, 11/2010 Freescale Semiconductor 15