MRF8P29300HR5

Freescale Semiconductor Technical Data Document Number: MRF8P29300H Rev. 0, 2/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 30 Volts, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) ηD (%) IRL (dB) 320 Peak 2900 13.3 50.5 --17 Signal Type Pulsed (100 μsec, 10% Duty Cycle) MRF8P29300HR6 MRF8P29300HSR6 2700--2900 MHz, 320 W, 30 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2900 MHz, 320 Watts Peak Power, 300 μsec, 10% Duty Cycle (3 dB Input Overdrive from Rated Pout) Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Push--Pull Operation • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 15. CASE 375D--05, STYLE 1 NI--1230 MRF8P29300HR6 CASE 375E--04, STYLE 1 NI--1230S MRF8P29300HSR6 PARTS ARE PUSH--PULL Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C RFinA/VGSA 3 1 RFoutA/VDSA RFinB/VGSB 4 2 RFoutB/VDSB (Top View) Figure 1. Pin Connections Table 2. Thermal Characteristics Characteristic Symbol Thermal Resistance, Junction to Case Case Temperature 61°C, 320 W Pulsed, 300 μsec Pulse Width, 10% Duty Cycle, 100 mA, 2900 MHz Case Temperature 69°C, 320 W Pulsed, 500 μsec Pulse Width, 20% Duty Cycle, 100 mA, 2900 MHz ZθJC Value (2,3) 0.06 0.10 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor MRF8P29300HR6 MRF8P29300HSR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 345 μAdc) VGS(th) 1.0 1.9 2.5 Vdc Gate Quiescent Voltage (2) (VDD = 30 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.3 3.0 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.1 0.18 0.3 Vdc Reverse Transfer Capacitance (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.53 — pF Output Capacitance (VDS = 30 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 470 — pF Input Capacitance (VDS = 30 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 264 — pF Characteristic Off Characteristics (1) On Characteristics Dynamic Characteristics (1) Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), f = 2900 MHz, 100 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 12.0 13.3 15.0 dB Drain Efficiency ηD 47.0 50.5 — % Input Return Loss IRL — --17 --9 dB Typical Pulsed RF Performance (In Freescale 2″x3″ Compact Test Fixture, 50 ohm system) VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak (32 W Avg.), 300 μsec Pulse Width, 10% Duty Cycle Frequency Gps (dB) ηD (%) IRL (dB) 2700 MHz 13.9 49.3 --11 2800 MHz 14.0 49.8 --18 2900 MHz 13.0 49.6 --15 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. MRF8P29300HR6 MRF8P29300HSR6 2 RF Device Data Freescale Semiconductor VBIAS C20 C18 C14 C10 C3 Z22 C30 R1 Z20 Z17 Z14 Z15 Z16 C1 RF INPUT Z1 Z3 Z4 Z5 Z6 C31 Z46 Z7 Z19 Z45 Z13 Z2 Z18 Z8 C2 Z9 Z11 DUT Z12 R2 Z21 Z10 Z23 VBIAS C19 C15 C11 C7 C4 C29 Z47 Z28 C26 C6 C33 C9 C13 C17 Z29 Z30 Z31 Z32 Z33 Z34 Z35 + + + C27 C34 C35 Z42 VSUPPLY RF OUTPUT Z43 Z44 C23 Z41 Z24 Z25 Z26 Z27 Z36 Z37 Z38 Z39 Z40 C24 Z48 C25 Z1* Z2 Z3 Z4 Z5 Z6 Z7* Z8, Z15 Z9, Z16 Z10, Z17 0.865″ x 0.065″ Microstrip 0.100″ x 0.110″ Microstrip 0.075″ x 0.065″ Microstrip 0.146″ X 0.111″ Microstrip 0.325″ x 0.204″ Microstrip 0.224″ x 0.111″ Microstrip 0.121″ x 0.065″ Microstrip 0.030″ x 0.065″ Microstrip 0.284″ x 0.165″ Microstrip 0.105″ x 0.620″ Microstrip Z11, Z18 Z12, Z19 Z13* Z14 Z20, Z21, Z45, Z46 Z22, Z23* Z24, Z28 Z25, Z29 Z26, Z30 Z27, Z31 Z32, Z36 C5 C32 0.135″ x 0.620″ Microstrip 0.120″ x 0.620″ Microstrip 0.957″ x 0.065″ Microstrip 0.495″ x 0.065″ Microstrip 0.055″ x 0.100″ Microstrip 0.554″ x 0.060″ Microstrip 0.202″ x 0.610″ Microstrip 0.166″ x 0.560″ Microstrip 0.200″ x 0.622″ Microstrip 0.088″ x 0.331″ Microstrip 0.247″ x 0.098″ Microstrip C8 C12 C16 Z33, Z37 Z34, Z38 Z35, Z39 Z40 Z41* Z42* Z43 Z44* Z47, Z48* + + + C21 C22 C28 VSUPPLY 0.112″ x 0.232″ Microstrip 0.158″ x 0.152″ Microstrip 0.058″ x 0.065″ Microstrip 0.505″ x 0.065″ Microstrip 0.917″ x 0.065″ Microstrip 0.092″ x 0.065″ Microstrip 0.695″ x 0.111″ Microstrip 0.479″ x 0.065″ Microstrip 0.409″ x 0.100″ Microstrip * Line length includes microstrip bends Figure 2. MRF8P29300HR6(HSR6) Test Circuit Schematic MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 3 MRF8P29300H/HS Rev. 5 C27 C34 C17 C18 C20 C14 C10 C3 C30 C26 C6 C33 C9 R1 C1 C11 C7 R2 C4 C29 CUT OUT AREA C2 C15 C35 C23 C31 C19 C13 C24 C25 C5 C32 C8 C12 C28 C21 C16 C22 Figure 3. MRF8P29300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P29300HR6(HSR6) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 3.3 pF Chip Capacitors ATC600F3R3BT250XT ATC C3, C4 18 pF Chip Capacitors ATC600F180JT250XT ATC C5, C6, C25, C26, C29, C30 5.1 pF Chip Capacitors ATC100B5R1BT250XT ATC C7, C8, C9, C10 100 pF Chip Capacitors ATC100B101JT500XT ATC C11, C12, C13, C14 1000 pF Chip Capacitors ATC100B102JT50XT ATC C15, C16, C17, C18 1 μF Chip Capacitors GRM32ER72A105KA01L Murata C19, C20 22 μF Chip Capacitors C5750KF1H226ZT TDK C21, C22, C27, C28, C34, C35 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M16X32--RH Multicomp C23, C24 5.1 pF Chip Capacitors ATC600F5R1CT500XT ATC C31 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC C32, C33 1 μF Chip Capacitors C3225JB2A105KT TDK R1, R2 5 Ω Chip Resistors CRCW08055R00JNEA Vishay PCB 0.030″, εr = 3.5 RF35A2 Taconic MRF8P29300HR6 MRF8P29300HSR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Coss 60 59 100 Pout, OUTPUT POWER (dBm) C, CAPACITANCE (pF) Ciss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 1 0 4 8 16 12 20 24 28 58 P2dB = 54.82 dBm (303 W) 57 56 P1dB = 54.19 dBm (263 W) 32 54 53 52 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 μsec, Duty Cycle = 10% 50 35 36 37 Note: Each side of device measured separately. 14.5 50 14 45 13.5 40 35 VDD = 30 Vdc IDQ = 100 mA f = 2900 MHz Pulse Width = 300 μsec Duty Cycle = 10% 12.5 12 11.5 30 100 30 16 41 42 44 43 13 32 V 28 V 25 20 10 500 30 V 12 26 V VDD = 24 V 200 100 0 300 400 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 7. Pulsed Power Gain versus Output Power 17 1000 mA Gps, POWER GAIN (dB) 500 mA 14 200 mA VDD = 30 Vdc f = 2900 MHz Pulse Width = 300 μsec Duty Cycle = 10% 13 IDQ = 100 mA 100 200 Gps 15 TC = --30_C 300 400 55 25_C 50 85_C 45 14 40 25_C 13 12 35 30 85_C 11 25 10 12 0 --30_C 16 15 45 14 11 16 Gps, POWER GAIN (dB) 40 IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 μsec Duty Cycle = 10% 15 Gps, POWER GAIN (dB) 55 ηD 39 Figure 5. Pulsed Output Power versus Input Power ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 15 13 38 Pin, INPUT POWER (dBm) PULSED Figure 4. Capacitance versus Drain--Source Voltage Gps Actual 55 51 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Ideal P3dB = 55.16 dBm (328 W) ηD 9 20 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 μsec, Duty Cycle = 10% 100 ηD, DRAIN EFFICIENCY (%) 1000 20 15 500 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 8. Pulsed Power Gain versus Output Power Figure 9. Pulsed Power Gain and Drain Efficiency versus Output Power MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS Pout, OUTPUT POWER (WATTS) PULSED 400 TC = --30_C 25_C 85_C 300 200 100 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 μsec, Duty Cycle = 10% 0 0 4 8 12 16 20 24 Pin, INPUT POWER (WATTS) PULSED Gps Gps, POWER GAIN (dB) 14.5 53 --8 52 --10 IRL 51 14 ηD 50 13.5 13 49 VDD = 30 Vdc IDQ = 100 mA Pulse Width = 300 μsec Duty Cycle = 10% 12.5 12 2700 2750 2800 2850 ηD, DRAIN EFFICIENCY (%) 15 --12 --14 --16 48 --18 47 2900 --20 IRL, INPUT RETURN LOSS (dB) Figure 10. Pulsed Output Power versus Input Power f, FREQUENCY (MHz) Figure 11. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 30 Vdc, Pout = 320 W Peak, Pulse Width = 300 μsec, Duty Cycle = 10%, and ηD = 45%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 2900 MHz f = 2700 MHz f = 2900 MHz Zsource Zload f = 2700 MHz VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Peak f MHz Zsource Ω Zload Ω 2700 4.7 -- j2.0 7.8 -- j1.0 2800 4.7 -- j1.7 8.7 -- j0.2 2900 4.7 -- j1.5 9.4 -- j0.7 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load Figure 13. Series Equivalent Source and Load Impedance MRF8P29300HR6 MRF8P29300HSR6 8 RF Device Data Freescale Semiconductor C11 C13 R1 C5 C3 C1 VGS C7 R3 C4 C9 CUT OUT AREA VGS C8 C6 VDS C2 R4 VDS C10 R2 C14 C12 MRF8P29300H Rev. 3 Figure 14. MRF8P29300HR6(HSR6) 2″x3″ Compact Test Circuit Component Layout Table 6. MRF8P29300HR6(HSR6) 2″x3″ Compact Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 4.7 pF Chip Capacitors ATC100A4R7BT150XT ATC C3, C4 47 μF, 16 V Tantalum Capacitors T491D476K016AT Kemet C5, C6, C11, C12 100 pF Chip Capacitors ATC100B101JT500XT ATC C7, C8, C9, C10 15 pF Chip Capacitors ATC100A150JT150XT ATC C13, C14 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp R1, R2, R3, R4 10 Ω Chip Resistors CRCW120610R0JNEA Vishay PCB 0.050″, εr = 10.2 RO3010 Rogers MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 9 TYPICAL CHARACTERISTICS — 2″x3″ COMPACT TEST FIXTURE 59 P3dB = 55.4 dBm (347 W) Pout, OUTPUT POWER (dBm) 58 57 Ideal P2dB = 55 dBm (316 W) 56 Actual P1dB = 54.3 dBm (269 W) 55 54 53 52 51 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz Pulse Width = 300 μsec, Duty Cycle = 10% 50 49 34 36 35 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) PULSED Figure 15. Pulsed Output Power versus Input Power 55 VDD = 30 Vdc, IDQ = 100 mA, f = 2900 MHz 15 Pulse Width = 300 μsec, Duty Cycle = 10% 50 Gps 45 14.5 14 40 35 13.5 ηD 13 30 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 15.5 25 12.5 20 12 30 500 100 Pout, OUTPUT POWER (WATTS) PULSED VDD = 30 Vdc, IDQ = 100 mA, Pout = 320 W Pulse Width = 300 μsec, Duty Cycle = 10% Gps, POWER GAIN (dB) 14.5 Gps IRL 53 --5 52 --10 14 51 13.5 50 13 49 ηD 2750 2800 2850 --15 --20 --25 48 --30 47 2900 --35 12.5 12 2700 ηD, DRAIN EFFICIENCY (%) 15 IRL, INPUT RETURN LOSS (dB) Figure 16. Pulsed Power Gain and Drain Efficiency versus Output Power f, FREQUENCY (MHz) Figure 17. Pulsed Power Gain, Drain Efficiency and Input Return Loss versus Frequency MRF8P29300HR6 MRF8P29300HSR6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 11 MRF8P29300HR6 MRF8P29300HSR6 12 RF Device Data Freescale Semiconductor MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 13 MRF8P29300HR6 MRF8P29300HSR6 14 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P29300H and MRF8P29300HS parts will be available for 2 years after release of MRF8P29300H and MRF8P29300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P29300H and MRF8P29300HS in the R6 tape and reel option. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Feb. 2011 Description • Initial Release of Data Sheet MRF8P29300HR6 MRF8P29300HSR6 RF Device Data Freescale Semiconductor 15 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. MRF8P29300HR6 MRF8P29300HSR6 Document Number: MRF8P29300H Rev. 0, 2/2011 16 RF Device Data Freescale Semiconductor Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: MRF8P29300HR5