MRF8S21120HR3

Freescale Semiconductor Technical Data Document Number: MRF8S21120H Rev. 0, 5/2010 RF Power Field Effect Transistors MRF8S21120HR3 MRF8S21120HSR3 N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 850 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) 2110 MHz 17.4 34.6 6.4 --37.5 2140 MHz 17.5 34.1 6.5 --38.0 2170 MHz 17.6 34.0 6.4 --37.6 2110--2170 MHz, 28 W AVG., 28 V W--CDMA, LTE LATERAL N--CHANNEL RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 160 Watts CW (1) Output Power (3 dB Input Overdrive from Rated Pout) • Typical Pout @ 1 dB Compression Point ≃ 107 Watts CW (1) Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate--Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465--06, STYLE 1 NI--780 MRF8S21120HR3 CASE 465A--06, STYLE 1 NI--780S MRF8S21120HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (2,3) TJ 225 °C CW 94 0.44 W W/°C Symbol Value (3,4) Unit CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 74°C, 28 W CW, 28 Vdc, IDQ = 850 mA, 2140 MHz Case Temperature 80°C, 120 W CW(1), 28 Vdc, IDQ = 850 mA, 2140 MHz RθJC 0.53 0.51 °C/W 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 2. Continuous use at maximum temperature will affect MTTF. 3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010. All rights reserved. RF Device Data Freescale Semiconductor MRF8S21120HR3 MRF8S21120HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 172 μAdc) VGS(th) 1.2 1.8 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 850 mAdc) VGS(Q) — 2.6 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 850 mAdc, Measured in Functional Test) VGG(Q) 4.0 5.2 7.0 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1.72 Adc) VDS(on) 0.1 0.16 0.3 Vdc Characteristic Off Characteristics On Characteristics Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg., f = 2170 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17.0 17.6 20.0 dB Drain Efficiency ηD 32.5 34.0 — % Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss PAR 5.9 6.4 — dB ACPR — --37.6 --36.0 dBc IRL — --13 --8 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Frequency Gps (dB) ηD (%) Output PAR (dB) ACPR (dBc) IRL (dB) 2110 MHz 17.4 34.6 6.4 --37.5 --22 2140 MHz 17.5 34.1 6.5 --38.0 --18 2170 MHz 17.6 34.0 6.4 --37.6 --13 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF8S21120HR3 MRF8S21120HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 850 mA, 2110--2170 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 107 (1) — — 45 — W IMD Symmetry @ 80 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) VBWres — 50 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 28 W Avg. GF — 0.2 — dB Gain Variation over Temperature (--30°C to +85°C) ∆G — 0.015 — dB/°C ∆P1dB — 0.005(1) — dBm/°C Output Power Variation over Temperature (--30°C to +85°C) MHz 1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 3 R2 R1 VGG VDD C9 C3 C10 C5 C13 C7 C1 C4 C2 CUT OUT AREA R3 C6 C8 C11 C12 MRF8S21120H Rev. 1 Figure 1. MRF8S21120HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S21120HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C3, C6, C7, C8 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C2 1.2 pF Chip Capacitor ATC100B1R2BT500XT ATC C4 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C5, C9, C10, C11, C12 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK C13 220 μF Electrolytic Capacitor 2222 120 18221 Vishay BC Components R1, R2 2 KΩ, 1/4 W Chip Resistors WCR12062K2FI Welwyn R3 10 Ω, 1/4 W Chip Resistor 232272461009 Phycomp PCB 0.030″, εr = 2.55 AD255A Arlon MRF8S21120HR3 MRF8S21120HSR3 4 RF Device Data Freescale Semiconductor 35 34 Gps 17.7 17.6 33 PARC 17.5 17.4 17.1 2060 2080 2100 --34 --6 --36 IRL 17.2 0 --35 ACPR 17.3 --33 2120 Input Signal PAR = 7.5 dB @ 0.01% --37 Probability on CCDF --38 2140 2160 2180 2200 2220 --12 --18 --24 --30 --1.2 --1.3 --1.4 --1.5 PARC (dB) Gps, POWER GAIN (dB) 17.9 36 IRL, INPUT RETURN LOSS (dB) ηD 17.8 37 VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 850 mA Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 18 ACPR (dBc) 18.1 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS --1.6 --1.7 f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28 Watts Avg. --10 VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 850 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz --20 IM3--U --30 IM3--L IM5--L --40 IM5--U --50 IM7--L IM7--U --60 1 10 100 TWO--TONE SPACING (MHz) 18 0 17 16 15 14 13 ηD VDD = 28 Vdc, IDQ = 850 mA f = 2140 MHz 60 --5 50 --15 ACPR 40 --1 --1 dB = 26 W --2 dB = 36 W --2 --3 dB = 48 W --3 20 Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF --4 --5 30 Gps 0 20 40 60 --35 --45 10 --55 0 --65 PARC 80 --25 ACPR (dBc) 1 ηD, DRAIN EFFICIENCY (%) 19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 3. Intermodulation Distortion Products versus Two--Tone Spacing 100 Pout, OUTPUT POWER (WATTS) Figure 4. Output Peak--to--Average Ratio Compression (PARC) versus Output Power MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 850 mA, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth 17 2110 MHz 16 2140 MHz 0 50 --10 40 ACPR 2170 MHz 30 2170 MHz 15 20 Gps 2140 MHz 2110 MHz 14 10 Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 13 1 --30 --40 --50 --60 0 300 100 10 --20 ACPR (dBc) Gps, POWER GAIN (dB) 18 60 ηD ηD, DRAIN EFFICIENCY (%) 19 Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 18 Gain 15 --7 GAIN (dB) 9 --21 IRL 6 IRL (dB) --14 12 --28 VDD = 28 Vdc Pin = 0 dBm IDQ = 850 mA 3 0 1740 1840 1940 2040 2140 2240 2340 2440 --35 --42 2540 f, FREQUENCY (MHz) Figure 6. Broadband Frequency Response W--CDMA TEST SIGNAL 100 10 0 --10 Input Signal --30 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 3.84 MHz Channel BW --20 1 (dB) PROBABILITY (%) 10 0 1 2 3 4 5 6 --40 --50 --60 +ACPR in 3.84 MHz Integrated BW --ACPR in 3.84 MHz Integrated BW --70 --80 7 8 9 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W--CDMA IQ Magnitude Clipping, Single--Carrier Test Signal 10 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 8. Single--Carrier W--CDMA Spectrum MRF8S21120HR3 MRF8S21120HSR3 6 RF Device Data Freescale Semiconductor VDD = 28 Vdc, IDQ = 850 mA, Pout = 28 W Avg. f MHz Zsource Ω Zload Ω 2060 4.33 -- j7.00 1.85 -- j4.10 2080 4.30 -- j6.60 1.90 -- j3.90 2100 4.28 -- j6.40 1.95 -- j3.70 2120 4.24 -- j6.00 2.05 -- j3.45 2140 4.22 -- j5.80 2.09 -- j3.30 2160 4.22 -- j5.60 2.50 -- j3.05 2180 4.21 -- j5.20 2.70 -- j2.90 2200 4.20 -- j5.00 3.00 -- j2.70 2220 4.15 -- j4.80 3.20 -- j2.60 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 7 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS VDD = 28 Vdc, IDQ = 850 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle 58 57 Pout, OUTPUT POWER (dBm) 56 Ideal 55 54 53 Actual 2110 MHz 52 51 50 2140 MHz 49 2140 MHz 2110 MHz 2170 MHz 2170 MHz 48 47 29 30 31 32 33 34 35 36 37 38 39 40 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB P3dB f (MHz) Watts dBm Watts dBm 2110 155 51.9 174 52.4 2140 158 52.0 186 52.7 2170 155 51.9 182 52.6 Test Impedances per Compression Level f (MHz) Zsource Ω Zload Ω 2110 P1dB 3.73 -- j8.14 1.29 -- j3.01 2140 P1dB 4.93 -- j8.59 1.32 -- j3.16 2170 P1dB 7.50 -- j9.37 1.40 -- j3.28 Figure 10. Pulsed CW Output Power versus Input Power @ 28 V MRF8S21120HR3 MRF8S21120HSR3 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 9 MRF8S21120HR3 MRF8S21120HSR3 10 RF Device Data Freescale Semiconductor MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 11 MRF8S21120HR3 MRF8S21120HSR3 12 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model • .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2010 Description • Initial Release of Data Sheet MRF8S21120HR3 MRF8S21120HSR3 RF Device Data Freescale Semiconductor 13 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. MRF8S21120HR3 MRF8S21120HSR3 Document Number: MRF8S21120H Rev. 0, 5/2010 14 RF Device Data Freescale Semiconductor