MRF8VP13350NR3

Freescale Semiconductor Technical Data Document Number: MRF8VP13350N Rev. 1, 10/2015 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These 350 W CW transistors are designed for industrial, scientific and medical (ISM) applications in the 700 to 1300 MHz frequency range. The transistors are capable of 350 W CW or pulse power in narrowband operation. MRF8VP13350N MRF8VP13350GN Typical Performance: VDD = 50 Vdc Frequency (MHz) 1300 (1) Signal Type Pulse (100 sec, 20% Duty Cycle) Gps (dB) D (%) Pout (W) 19.2 58.0 350 Peak 700–1300 MHz, 350 W CW, 50 V RF POWER LDMOS TRANSISTORS Typical Performance: In 915 MHz reference circuit, VDD = 48 Vdc Frequency (MHz) Signal Type Gps (dB) D (%) Pout (W) 915 CW 20.7 67.5 355 Pin (W) Test Voltage Result 9.6 Peak (3 dB Overdrive) 50 Load Mismatch/Ruggedness Frequency (MHz) 1300 (1) Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) > 20:1 at all Phase Angles OM--780--4L PLASTIC MRF8VP13350N No Device Degradation 1. Measured in 1300 MHz pulse narrowband test circuit. Features OM--780G--4L PLASTIC MRF8VP13350GN  Internally input matched for ease of use  Device can be used single--ended or in a push--pull configuration  Qualified up to a maximum of 50 VDD operation  Suitable for linear applications with appropriate biasing  Integrated ESD protection Gate A 3 1 Drain A Gate B 4 2 Drain B Typical Applications  915 MHz industrial heating/welding systems  1300 MHz particle accelerators  900 MHz TETRA base stations (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Pin Connections  Freescale Semiconductor, Inc., 2015 All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRF8VP13350N MRF8VP13350GN 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS –0.5, +100 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (1,2) TJ –40 to +225 C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 93C, 350 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 915 MHz RJC 0.24 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 76C, 350 W Peak, 100 sec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1300 MHz ZJC 0.04 C/W Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1C, passes 1500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 48 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 460 Adc) VGS(th) 1.3 1.9 2.3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.2 2.7 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 1.3 Adc) VDS(on) 0.1 0.21 0.3 Vdc Characteristic Off Characteristics (4) On Characteristics 1. 2. 3. 4. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.freescale.com/rf/calculators. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955. Each side of device measured separately. (continued) MRF8VP13350N MRF8VP13350GN 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1,2) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 350 W Peak (70 W Avg.), f = 1300 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Gps 17.5 19.2 20.5 dB Drain Efficiency D 55.0 58.0 — % Table 6. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 1300 Signal Type VSWR Pin (W) Pulse (100 sec, 20% Duty Cycle) > 20:1 at all Phase Angles 9.6 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 7. Ordering Information Device MRF8VP13350NR3 MRF8VP13350GNR3 Tape and Reel Information R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel Package OM--780--4L OM--780G--4L 1. Part internally input matched. 2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 3 TYPICAL CHARACTERISTICS 1000 NORMALIZED VGS(Q) C, CAPACITANCE (pF) Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 100 Coss 10 Crss 1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Note: Each side of device measured separately. Figure 2. Capacitance versus Drain--Source Voltage 1.06 1.05 1.04 1.03 IDQ(A+B) = 100 mA VDD = 50 Vdc 500 mA 1.02 1500 mA 1.01 1 0.99 2500 mA 0.98 0.97 0.96 0.95 0.94 --50 --25 0 25 50 75 100 TC, CASE TEMPERATURE (C) IDQ (mA) Slope (mV/C) 100 --2.216 500 --1.894 1500 --1.648 2500 --1.420 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature MRF8VP13350N MRF8VP13350GN 4 RF Device Data Freescale Semiconductor, Inc. 915 MHz REFERENCE CIRCUIT — 5  4 (12.7 cm  10.2 cm) Table 8. 915 MHz Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 48 Vdc, IDQ(A+B) = 100 mA, TC = 25C Frequency (MHz) Pin (W) Gps (dB) D (%) Pout (W) 902 3.5 20.1 64.7 359 915 3.0 20.7 67.5 355 928 3.5 20.1 68.7 361 Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit) Frequency (MHz) Signal Type 915 CW VSWR Pin (W) > 10:1 at all Phase Angles 9.0 (3 dB Overdrive) Test Voltage, VDD Result 48 No Device Degradation MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 5 915 MHz REFERENCE CIRCUIT — 5  4 (12.7 cm  10.2 cm) VDD VGG + C27 – C14 C15 C3 C4 C17 R1 C2 C10 C8 C16 C12* C20 C25* Q1 C5 C1 C11 C9 R2 C13* C21 C24 C22 C26* C6 C18 C7 C19 C23 MRF8VP13350N Rev. 0 *C12, C13, C25 and C26 are mounted vertically. Figure 4. MRF8VP13350N Reference Circuit Component Layout — 915 MHz Table 10. MRF8VP13350N Reference Circuit Component Designations and Values — 915 MHz Part Description Part Number Manufacturer C1 62 pF Chip Capacitor ATC100B620JT500XT ATC C2, C5 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C3, C7, C14, C15, C22, C23 10 F Chip Capacitors GRM32ER61H106KA12L Murata C4, C6, C16, C17, C18, C19 47 pF Chip Capacitors ATC600F470JT250XT ATC C8, C9 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC C10, C11 12 pF Chip Capacitors ATC800B120JT500XT ATC C12, C13 5.6 pF Chip Capacitors ATC800B5R6CT500XT ATC C20, C21 2.4 pF Chip Capacitors ATC800B2R4BT500XT ATC C24 2.7 pF Chip Capacitor ATC800B2R7BT500XT ATC C25, C26 39 pF Chip Capacitors ATC600S390JT250XT ATC C27 470 F Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor MHT1002NR3 Freescale R1, R2 6.2 , 1/4 W Chip Resistors CRCW12066R20FKEA Vishay PCB Rogers RO4350B, 0.020, r = 3.66 — MTL MRF8VP13350N MRF8VP13350GN 6 RF Device Data Freescale Semiconductor, Inc. Z31 VSUPPLY Z30 C27 C14 VBIAS C15 C3 Z20 Z29 Z28 Z19 C4 Z18 Z27 C16 C17 R1 RF INPUT Z1 Z2 C2 Z8 Z10 C5 Z3 Z5 Z9 C8 Z17 Z11 C9 Z21 Z22 Z13 C10 Z23 C11 C12 C20 C13 C21 Z24 Z25 C24 C25 RF Z26 OUTPUT C26 R2 Z4 Z15 Z6 Z12 Z7 Z16 Z14 Z32 C18 C6 Z33 C19 C22 Z34 C23 C1 C7 Figure 5. MRF8VP13350N Reference Circuit Schematic — 915 MHz Table 11. MRF8VP13350N Reference Circuit Microstrips — 915 MHz Description Microstrip Microstrip Description Z1 1.218  0.044 Microstrip Z18 0.098  0.044 45 Taper Microstrip Z2 0.114  0.044 45 Taper Microstrip Z19 0.489  0.044 45 Taper Microstrip Z3 0.794  0.044 45 Taper Microstrip Z20 0.077  0.044 45 Taper Microstrip Z4 0.101  0.044 45 Taper Microstrip Z21 0.077  0.587 Microstrip Z5 0.794  0.044 45 Taper Microstrip Z22 0.241  0.587 Microstrip Z6 0.101  0.044 45 Taper Microstrip Z23 0.460  0.119 Microstrip Z7 0.794  0.044 Microstrip Z24 0.414  0.044 Microstrip Z8 0.080  0.044 Microstrip Z25 0.223  0.044 Microstrip Z9 0.500  0.094 Microstrip Z26 0.998  0.044 Microstrip Z10 0.010  0.642 Microstrip Z27 0.279  0.075 45 Taper Microstrip Z11 0.247  0.642 Microstrip Z28 0.643  0.075 45 Taper Microstrip Z12 0.170  0.642 Microstrip Z29 0.118  0.075 Microstrip Z13 0.044  0.050 Microstrip Z30 1.118  0.075 Microstrip Z14 0.098  0.044 45 Taper Microstrip Z31 0.769  0.153 Microstrip Z15 0.489  0.044 45 Taper Microstrip Z32 0.279  0.075 45 Taper Microstrip Z16 0.331  0.044 Microstrip Z33 0.643  0.075 Microstrip Z17 0.044  0.050 Microstrip Z34 0.094  0.075 Microstrip MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS — 915 MHz REFERENCE CIRCUIT 22 21 66 64 20.5 Gps 62 360 20 19.5 Pout, OUTPUT POWER (WATTS) Gps, POWER GAIN (dB) 21.5 PAE, POWER ADDED EFFICIENCY (%) 68 PAE 350 VDD = 48 Vdc Pin = 3.0 W IDQ(A+B) = 100 mA 19 18.5 895 910 905 900 915 340 Pout 920 925 930 330 935 f, FREQUENCY (MHz) Figure 6. Power Gain, Power Added Efficiency and Output Power versus Frequency at a Constant Input Power 500 400 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) 100 VDD = 48 Vdc, Pin = 3.0 W 300 VDD = 48 Vdc, Pin = 1.5 W 200 100 Detail A 0 0 0.5 1 2 1.5 2.5 3 60 VDD = 48 Vdc Pin = 1.5 W 40 20 f = 915 MHz 0 f = 915 MHz VDD = 48 Vdc Pin = 3.0 W 80 0 1.5 2 VGS, GATE--SOURCE VOLTAGE (VOLTS) 4 3.5 1 0.5 Detail A VGS, GATE--SOURCE VOLTAGE (VOLTS) Gps, POWER GAIN (dB) V = 48 Vdc 28 DD IDQ(A+B) = 100 mA 26 f = 928 MHz 902 MHz 915 MHz 24 Gps 22 20 18 14 928 MHz 902 MHz 70 50 30 10 7.5 5 915 MHz 2.5 Pin 10 90 10 928 MHz 915 MHz 902 MHz 16 12 PAE 100 Pin, INPUT POWER (WATTS) 30 PAE, POWER ADDED EFFICIENCY (%) Figure 7. Output Power versus Gate--Source Voltage 0 1000 Pout, OUTPUT POWER (WATTS) Figure 8. Power Gain, Power Added Efficiency and Input Power versus Output Power and Frequency MRF8VP13350N MRF8VP13350GN 8 RF Device Data Freescale Semiconductor, Inc. 90 Gps, POWER GAIN (dB) VDD = 48 Vdc 26 IDQ(A+B) = 100 mA 24 f = 915 MHz TA = 25_C PAE 22 20 18 16 10 10 125_C 50 30 10 25_C 85_C 125_C 10 Gps 14 12 70 85_C 125_C Pin 100 7.5 25_C 85_C 5 2.5 Pin, INPUT POWER (WATTS) 28 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS — 915 MHz REFERENCE CIRCUIT 0 1000 Pout, OUTPUT POWER (WATTS) Figure 9. Power Gain, Power Added Efficiency and Input Power versus Output Power and Temperature MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 9 1300 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4  6 (10.2 cm  15.2 cm) Table 12. 1300 MHz Narrowband Performance (1,2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 350 W Peak (70 W Avg.), f = 1300 MHz, 100 sec Pulse Width, 20% Duty Cycle Characteristic Symbol Min Typ Max Unit Power Gain Gps 17.5 19.2 20.5 dB Drain Efficiency D 55.0 58.0 — % 1. Part internally input matched. 2. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MRF8VP13350N MRF8VP13350GN 10 RF Device Data Freescale Semiconductor, Inc. 1300 MHz NARROWBAND PRODUCTION TEST FIXTURE — 4  6 (10.2 cm  15.2 cm) C6 C16 C15 C17 C10 MRF8VP13350N Rev. 2 C2 C18 C8 C4 C13 C5 R1 C3 D59659 CUT OUT AREA R2 C1 R3 C9 C24 C25 C23 C22 C14 C12 C11 C21 C20 C19 C26 C7 Figure 10. MRF8VP13350N Narrowband Test Circuit Component Layout — 1300 MHz Table 13. MRF8VP13350N Narrowband Test Circuit Component Designations and Values — 1300 MHz Part Description Part Number Manufacturer C1, C13 10 pF Chip Capacitors ATC800B100JT500XT ATC C2, C3 6.2 pF Chip Capacitors ATC800B6R2BT500XT ATC C4, C5 8.2 pF Chip Capacitors ATC800B8R2CT500XT ATC C6, C7, C10, C11 180 pF Chip Capacitors ATC800B181JT300XT ATC C8, C9 4.7 pF Chip Capacitors ATC800B4R7CT500XT ATC C12 1.0 pF Chip Capacitor ATC800B1R0BT500XT ATC C14 1.7 pF Chip Capacitor ATC800B1R7BT500XT ATC C15, C21 47 F Tantalum Capacitors 593D476X9016D2TE3 Vishay/Sprague C16, C22 0.1 F Chip Capacitors C1206C104K1RACTU Kemet C17, C23 0.22 F Chip Capacitors C1210C224K1RACTU Kemet C18, C24 0.1 F Chip Capacitors C1206C104K1RACTU Kemet C19, C25 2.2 F Chip Capacitors 2225X7R225KT3AB ATC C20, C26 330 F, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp R1 100 , 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R2, R3 200 , 1/4 W Chip Resistors CRCW1206200RFKEA Vishay PCB Arlon AD255A, 0.030, r = 2.55 D59659 MTL MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 11 MRF8VP13350N MRF8VP13350GN 12 RF Device Data Freescale Semiconductor, Inc. RF INPUT Z1 C1 Z2 Z5 Z3 C21 + Z6 R1 Z4 C15 + Z8 Z7 C22 C16 C23 Z22 C5 C7 Z12 C4 Z11 C6 Z20 Z18 Z14 Z13 Z17 Z16 Z15 DUT Z26 Z24 Z23 Z25 Z28 Z32 Z31 C11 Z30 Z34 R2 Z33 C10 1.096  0.065 Microstrip* 1.061  0.065 Microstrip* 0.409  0.065 Microstrip 0.519  0.065 Microstrip 0.125  0.065 Microstrip 0.543  0.485 Microstrip 0.075  0.485 Microstrip Z3, Z5 Z4, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 * Line length include microstrip bends 0.233  0.083 Microstrip Z2 Description 0.410  0.083 Microstrip Z1 Microstrip C9 C24 Z36 C8 Z35 C18 C25 Z38 R3 Z37 C19 Z31, Z32 Z29, Z30 Z27, Z28 Z25, Z26 0.468  0.485 Microstrip 0.429  0.065 Microstrip 1.088  0.065 Microstrip 0.768  0.065 Microstrip 0.075  0.485 Microstrip 0.534  0.065 Microstrip Z21, Z22 Z23, Z24 0.993  0.065 Microstrip Z19, Z20 Description 0.768  0.065 Microstrip Microstrip Z17, Z18 Microstrip Z44 Z43 Z42 Z41 Z39, Z40 Z37, Z38 Z35, Z36 Z33, Z34 VDD Z41 VDD C12 Z42 C13 0.065  0.083 Microstrip 0.619  0.083 Microstrip 0.075  0.083 Microstrip 0.313  0.083 Microstrip 1.283  0.084 Microstrip* 0.025  0.485 Microstrip 0.030  0.485 Microstrip 0.020  0.485 Microstrip Description C26 + Z40 Z39 C20 + Figure 11. MRF8VP13350N Narrowband Test Circuit Schematic — 1300 MHz C3 Z10 C2 Z9 C17 Z19 Z29 Table 14. MRF8VP13350N Narrowband Test Circuit Microstrips — 1300 MHz VGG VGG Z21 Z27 Z43 C14 Z44 RF OUTPUT TYPICAL CHARACTERISTICS — 1300 MHz Pout, OUTPUT POWER (WATTS) PEAK 400 VDD = 50 Vdc, f = 1300 MHz Pulse Width = 100 sec, 20% Duty Cycle 350 300 250 Pin = 5 W 200 150 Pin = 2.5 W 100 50 0 0 0.5 1 1.5 2 2.5 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 12. Output Power versus Gate--Source Voltage at a Constant Input Power 54 52 50 48 46 44 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300 MHz Pulse Width = 100 sec, 20% Duty Cycle 42 40 24 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300 MHz Pulse Width = 100 sec, 20% Duty Cycle 21 56 Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) PEAK 58 26 28 30 32 34 36 38 40 42 60 IDQ(A+B) = 900 mA 20 50 600 mA 19 40 18 300 mA 30 100 mA 17 16 15 10 44 70 D 100 mA 300 mA 600 mA 20 Gps 900 mA 10 0 500 100 Pin, INPUT POWER (dBm) D, DRAIN EFFICIENCY (%) 22 60 Pout, OUTPUT POWER (WATTS) PEAK f (MHz) P1dB (W) P3dB (W) 1300 338 390 Figure 14. Power Gain and Drain Efficiency versus Output Power and Quiescent Current Figure 13. Output Power versus Input Power 20 18 TC = 25_C --40_C 12 10 50 40 Gps 16 14 60 85_C 85_C 30 20 D 100 10 500 IDQ(A+B) = 100 mA, f = 1300 MHz, Pulse Width = 100 sec 20% Duty Cycle 20 19 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 22 21 70 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300 MHz 25_C Pulse Width = 100 sec, 20% Duty Cycle --40_C D, DRAIN EFFICIENCY (%) 24 18 17 50 V 16 15 45 V 14 40 V 13 35 V 12 11 VDD = 30 V 0 50 100 150 200 250 300 350 400 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 15. Power Gain and Drain Efficiency versus Output Power Figure 16. Power Gain versus Output Power and Drain--Source Voltage MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 13 1300 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource  Zload  1300 5.1 + j3.6 2.1 + j3.9 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50  + Zload Figure 17. Narrowband Series Equivalent Source and Load Impedance — 1300 MHz MRF8VP13350N MRF8VP13350GN 14 RF Device Data Freescale Semiconductor, Inc. 4X 0.185 (4.70) 0.800 (20.32) 4X Solder Pads 0.389(1) (9.88) 0.409(1) (10.39) 0.350 (8.89) Inches (mm) 0.815(1) (20.70) 1. Slot dimensions are minimum dimensions and exclude milling tolerances. Figure 18. PCB Pad Layout for OM--780--4L 0.740 (18.80) 0.350 (8.89) 0.325 (8.26) Solder pad with thermal via structure. 0.410 0.510 (10.41) (12.95) 4X 0.185 (4.70) Inches (mm) Figure 19. PCB Pad Layout for OM--780G--4L MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS MRF8VP13350N MRF8VP13350GN 16 RF Device Data Freescale Semiconductor, Inc. MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 17 MRF8VP13350N MRF8VP13350GN 18 RF Device Data Freescale Semiconductor, Inc. MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 19 MRF8VP13350N MRF8VP13350GN 20 RF Device Data Freescale Semiconductor, Inc. MRF8VP13350N MRF8VP13350GN RF Device Data Freescale Semiconductor, Inc. 21 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes  AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File Development Tools  Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.freescale.com/rf 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2015  Initial Release of Data Sheet 1 Oct. 2015  Table 2, Thermal Characteristics: added thermal resistance data for the 915 MHz reference circuit, p. 2 MRF8VP13350N MRF8VP13350GN 22 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2015 Freescale Semiconductor, Inc. MRF8VP13350N MRF8VP13350GN Document Number: RF Device Data MRF8VP13350N Rev. 1, 10/2015 Freescale Semiconductor, Inc. 23