MRF9002NR2

Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen‐ cies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. The device is in a PFP-16 Power Flat Pack package which gives excellent thermal performances through a solderable backside contact. • Typical Performance at 960 MHz, 26 Volts Output Power — 2 Watts Per Transistor Power Gain — 18 dB Efficiency — 50% • Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW Output Power Features • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large-Signal Impedance Parameters • RoHS Compliant • In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. 1000 MHz, 2 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET 16 ARCHIVE INFORMATION ARCHIVE INFORMATION N-Channel Enhancement-Mode Lateral MOSFET 1 CASE 978-03 PLASTIC PFP-16 N.C. N.C. 1 16 DRAIN 1-1 2 15 DRAIN 1-2 GATE1 3 14 DRAIN 2-1 N.C. 4 13 DRAIN 2-2 GATE2 5 12 N.C. N.C. 6 11 DRAIN 3-1 GATE3 N.C. 7 8 10 9 DRAIN 3-2 N.C. (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Pin Connections Table 1. Maximum Ratings Symbol Value Unit Drain-Source Voltage Rating VDSS -0.5, +65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Dissipation Per Transistor @ TC = 25°C PD 4 W Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature TJ 150 °C Symbol Value (1) Unit RθJC 12 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case, Single Transistor Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating Package Peak Temperature Unit 3 260 °C 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006, 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF9002NR2 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 μAdc) VGS(th) 2.4 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(Q) 3 — 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 Adc) VDS(on) — 0.3 — Vdc Gps 15 18 — dB Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) η 35 50 — % Input Return Loss @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) IRL — -15 -9 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) P1dB 34 37 — dBm Characteristic On Characteristics ARCHIVE INFORMATION Common-Source Amplifier Power Gain @ P1dB (VDD = 26 Vdc, IDQ = 25 mA, f = 960.0 MHz) MRF9002NR2 2 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION Functional Tests (Per Transistor in Freescale Test Fixture, 50 ohm system) VGS1 + C7 Z1 Z4 Z5 Z3 C16 C1 Z6 RF2 INPUT + C9 L2 R2 Z7 VDS2 + C10 L5 Z9 Z10 Z8 C18 C4 RF2 OUTPUT C13 C3 VGS3 Z11 RF3 INPUT C2 RF1 OUTPUT C14 VGS2 ARCHIVE INFORMATION R1 DUT + C11 Z12 L3 R3 VDS3 + C12 L6 Z14 Z15 Z13 C17 C6 RF3 OUTPUT C15 C5 ARCHIVE INFORMATION RF1 INPUT Z2 L1 VDS1 + C8 L4 Figure 2. MRF9002NR2 Broadband Test Circuit Schematic Table 5. MRF9002NR2 Broadband Test Circuit Component Designations and Values Designators Description C1-C6 33 pF Chip Capacitors (0805) C7-C12 1.0 μF, 35 V Tantalum Capacitors, B Case, Kemet C13 8.2 pF Chip Capacitor (0805) C14, C15 10 pF Chip Capacitors (0805) C16, C17 2.7 pF Chip Capacitors (0805) C18 3.3 pF Chip Capacitor (0805) L1-L6 12 nH Chip Inductors (0805) R1-R3 0 W Chip Resistors (0805) Z1, Z11 1.16 x 28.5 mm Microstrip Z2, Z7, Z12 0.65 x 5.6 mm Microstrip Z3, Z8, Z13 0.65 x 2.6 mm Microstrip Z4, Z14 1.16 x 19.5 mm Microstrip Z5, Z15 1.16 x 17.5 mm Microstrip Z6 1.16 x 12.9 mm Microstrip Z9 1.16 x 27.2 mm Microstrip Z10 1.16 x 4.3 mm Microstrip PCB Etched Circuit Board Raw PCB Material Rogers RO4350, 0.020″, 2.5″, x 2.5″, er = 3.5 Bedstead Copper Heatsink MRF9002NR2 RF Device Data Freescale Semiconductor 3 RF1 OUTPUT RF1 INPUT C1 C2 VGS1 VDS1 C16 VGS2 VDS2 C8 C7 C10 C9 L4 C14 L1 R1 L2 Pin 1 ARCHIVE INFORMATION C3 RF2 OUTPUT L5 R2 C18 C13 C4 R3 L3 L6 C15 MRF9002 960 MHz Rev. B C11 C12 C17 VGS3 VDS3 C5 RF3 INPUT C6 RF3 OUTPUT Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐ logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. MRF9002NR2 Broadband Test Circuit Component Layout MRF9002NR2 4 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION RF2 INPUT TYPICAL CHARACTERISTICS 35 18.75 27 18.5 25 18.25 23 18 21 17.75 VDS = 26 Vdc IDQ = 25 mA f = 960 MHz Single-Tone 19 15 0 2 4 6 8 10 12 14 75 mA 20 50 mA 19 18 25 mA 17 VDS = 26 Vdc f = 960 MHz Single-Tone 16 17.25 17 16 15 10 15 30 35 40 Figure 4. Output Power and Power Gain versus Input Power Figure 5. Power Gain versus Output Power 20.2 -29 20.1 -30 IMD 20 -31 Pout = 2 W (PEP) IDQ = 25 mA f1 = 960.0 MHz, f2 = 960.1 MHz 19.9 -32 23 24 25 26 27 28 -20 -25 -30 -35 -40 -45 50 mA -55 75 mA -60 100 mA VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz -65 30 29 25 mA -50 5 10 -10 39 Pout , OUTPUT POWER (dBm) 41 -20 3rd Order -30 -40 5th Order -50 7th Order VDS = 26 Vdc f1 = 960.0 MHz, f2 = 960.1 MHz -70 15 20 25 30 20 25 30 40 35 Figure 7. Intermodulation Distortion versus Output Power 0 -60 15 Pout, OUTPUT POWER (dBm) PEP VDS, DRAIN SOURCE SUPPLY (VOLTS) Figure 6. Power Gain and Intermodulation Distortion versus Supply Voltage IMD, INTERMODULATION DISTORTION (dBc) 25 Pout, OUTPUT POWER (dBm) -28 10 20 Pin, INPUT POWER (dBm) Gps G ps , POWER GAIN (dB) 21 17.5 20.3 22 100 mA 19 Gps 29 17 ARCHIVE INFORMATION 22 35 40 Pin = 20 dBm 37 35 15 dBm 33 VDS = 26 Vdc IDQ = 25 mA Single-Tone 31 29 10 dBm 27 25 925 935 945 955 965 975 Pout, OUTPUT POWER (dBm) f, FREQUENCY (MHz) Figure 8. Intermodulation Distortion Products versus Output Power Figure 9. Output Power versus Frequency 985 MRF9002NR2 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION 31 19.25 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) Pout 23 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) Pout , OUTPUT POWER (dBm) 33 19.5 TYPICAL CHARACTERISTICS 109 12 MTTF FACTOR (HOURS X AMPS2) 11 Ciss 10 C, CAPACITANCE (pF) 9 8 Coss 7 6 5 Crss 4 108 107 ARCHIVE INFORMATION 2 22 23 24 25 26 27 28 29 30 VDS, DRAIN SOURCE SUPPLY (VOLTS) Figure 10. Capacitance versus Drain Source Voltage 106 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 11. MTTF Factor versus Junction Temperature MRF9002NR2 6 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION 3 TRANSISTORS 1 and 2 TRANSISTOR 3 Zo = 50 Ω Zo = 50 Ω f = 925 MHz 985 MHz f = 925 MHz 985 MHz Zsource Zload Zsource Zsource ARCHIVE INFORMATION T2 985 MHz ARCHIVE INFORMATION T3 T2 T1 985 MHz f = 925 MHz f = 925 MHz T1 985 MHz 985 MHz Zload Zload T3 f = 925 MHz f = 925 MHz VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP Zload Ω f MHz Zsource Ω 925 4.5 + j13.3 23.4 + j9.2 960 4.3 + j15.3 23.2 + j10.4 985 4.1 + j15.8 23.0 + j11.1 Transistor 1 VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP Zload Ω f MHz Zsource Ω 925 6.0 + j12.3 19.7 + j27.8 960 5.9 + j14.3 22.0 + j23.9 985 5.8 + j16.5 22.5 + j25.4 Transistor 2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network VDD = 26 V, IDQ = 25 mA, Pout = 2 W PEP Zload Ω f MHz Zsource Ω 925 4.3 + j12.2 23.1 + j6.5 960 4.3 + j14.0 22.8 + j8.4 985 3.9 + j15.9 22.6 + j9.3 Z source Z load Transistor 3 Figure 12. Series Equivalent Source and Load Impedance MRF9002NR2 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS h X 45 _ A 1 14 x e 16 D e/2 D1 8 9 E1 8X bbb M B BOTTOM VIEW E C B S ÉÉ ÇÇ ÇÇ ÉÉ ARCHIVE INFORMATION b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H M ccc C q W GAUGE PLANE W L C A SECT W-W L1 C aaa A1 S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --0.600 0_ 7_ 0.200 0.200 0.100 1.000 0.039 DETAIL Y CASE 978-03 ISSUE C PLASTIC PFP-16 MRF9002NR2 8 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION E2 REVISION HISTORY The following table summarizes revisions to this document. Date 8 Dec. 2009 Description • Data sheet archived. Part no longer manufactured. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF9002NR2 RF Device Data Freescale Semiconductor 9 Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2009. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MRF9002NR2 Document Number: MRF9002NR2 Rev. 8, 5/2006 10 RF Device Data Freescale Semiconductor ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: