MRF9030LSR1

Freescale Semiconductor Technical Data Document Number: MRF9030 Rev. 7, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET ARCHIVE INFORMATION • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — - 32.5 dBc 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • • • • Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360C - 05, STYLE 1 NI - 360S Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, + 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 117 0.67 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.5 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION MRF9030LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M1 (Minimum) MRF9030LSR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) — 3.8 — Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) — 0.19 0.4 Vdc gfs — 3 — S Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 49.5 — pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 26.5 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1 — pF Off Characteristics Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics (continued) MRF9030LSR1 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 37 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — - 32.5 - 28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — - 15.5 -9 dB Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 19 — dB Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41.5 — % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — - 33 — dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — - 14 — dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) P1dB — 30 — W Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps — 19 — dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) η — 60 — % ARCHIVE INFORMATION ARCHIVE INFORMATION Functional Tests (In Freescale Test Fixture, 50 ohm system) MRF9030LSR1 RF Device Data Freescale Semiconductor 3 B2 B1 VDD + C7 C8 C14 C5 L1 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 + + C15 C16 C17 L2 C9 DUT + Z8 Z9 Z10 Z11 Z12 Z13 C13 C1 C2 ARCHIVE INFORMATION RF OUTPUT B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2 C3 C4 C6 C10 Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor 7.5 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitors 10 pF Chip Capacitors 9.1 pF Chip Capacitor 0.6 pF to 4.5 pF Trim Capacitor 220 μF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB C11 C12 0.500″ x 0.100″ Microstrip 0.215″ x 0.270″ Microstrip 0.315″ x 0.270″ Microstrip 0.160″ x 0.270″ x 0.520″, Taper 0.285″ x 0.520″ Microstrip 0.450″ x 0.270″ Microstrip 0.140″ x 0.270″ Microstrip 0.250″ x 0.060″ Microstrip 0.720″ x 0.060″ Microstrip 0.490″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip Taconic RF - 35 - 0300, 30 mil, εr = 3.55 Figure 1. 945 MHz Broadband Test Circuit Schematic C7 C17 VDD VGG C8 C9 L1 C1 C2 C5 C15 C16 L2 C13 C3 C4 C6 CUT OUT AREA RF INPUT C14 C10 C11 RF OUTPUT C12 ARCHIVE INFORMATION VGG MRF9030 900 MHz Rev−02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030LSR1 4 RF Device Data Freescale Semiconductor 45 η 18 40 VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two−Tone, 100 kHz Tone Spacing 17 16 IMD 15 35 −30 −32 IRL 14 −34 −36 12 930 935 940 945 950 955 −38 960 −12 −14 −16 −18 f, FREQUENCY (MHz) 20 G ps , POWER GAIN (dB) 19.5 IDQ = 375 mA 19 300 mA 18.5 250 mA 200 mA 18 17.5 VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 17 1 10 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz −30 IDQ = 200 mA −40 300 mA 250 mA −50 375 mA −60 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 22 0 −10 −20 100 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz 20 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION 13 −10 −20 −30 3rd Order −40 −50 5th Order 7th Order 1 50 Gps 18 40 16 30 η 14 20 12 −60 −70 60 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 10 0.1 ARCHIVE INFORMATION G ps , POWER GAIN (dB) 19 η, DRAIN EFFICIENCY (%) 50 Gps IRL, INPUT RETURN LOSS (dB) 20 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain and Efficiency versus Output Power MRF9030LSR1 RF Device Data Freescale Semiconductor 5 20 60 Gps 40 16 20 VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz η 14 12 10 −20 −40 IMD 8 −60 1 ARCHIVE INFORMATION 0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain, Efficiency and IMD versus Output Power MTTF FACTOR (HOURS X AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature ARCHIVE INFORMATION G ps , POWER GAIN (dB) 18 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS MRF9030LSR1 6 RF Device Data Freescale Semiconductor Zsource Zload f = 930 MHz f = 930 MHz f = 960 MHz f = 960 MHz VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz Zsource Ω Zload Ω 930 1.34 - j0.1 3.175 + j0.09 945 1.36 - j0.2 3.1 + j0.08 960 1.4 - j0.14 3.0 + j0.05 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source ARCHIVE INFORMATION ARCHIVE INFORMATION Zo = 5 Ω Z load Figure 10. Series Equivalent Source and Load Impedance MRF9030LSR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS A A (FLANGE) B 1 B (FLANGE) 2X D bbb M T A M 2X K B M R (LID) ccc M T A M N (LID) ARCHIVE INFORMATION ccc T A M B M F H M B M E C S (INSULATOR) PIN 3 T M (INSULATOR) bbb M T A M B SEATING PLANE aaa M T A M B M CASE 360C - 05 ISSUE E NI - 360S MRF9030LSR1 M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF ARCHIVE INFORMATION NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 2 MRF9030LSR1 8 RF Device Data Freescale Semiconductor REVISION HISTORY The following table summarizes revisions to this document. Revision Date 7 Sept. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Data sheet archived. Parts no longer manufactured. ARCHIVE INFORMATION ARCHIVE INFORMATION • Added Revision History, p. 9 MRF9030LSR1 RF Device Data Freescale Semiconductor 9 How to Reach Us: Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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ARCHIVE INFORMATION ARCHIVE INFORMATION Home Page: www.freescale.com Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9030LSR1 Document Number: MRF9030 Rev. 7, 9/2008 10 RF Device Data Freescale Semiconductor